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	Author	Titova, N.; Gayduchenko, I. A.; Moskotin, M. V.; Fedorov, G. F.; Goltsman, G. N.
	Title	Carbon nanotube based terahertz radiation detectors			Type	Conference Article
	Year	2019	Publication	J. Phys.: Conf. Ser.	Abbreviated Journal	J. Phys.: Conf. Ser.
	Volume	1410	Issue		Pages	012208 (1 to 5)
	Keywords	carbon nanotubes, CNT
	Abstract	In this paper, we study terahertz detectors based on single quasimetallic carbon nanotubes (CNT) with asymmetric contacts and different metal pairs. We demonstrate that, depending on the contact metallization of the device, various detection mechanisms are manifested.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1742-6588	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1270
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	Author	Gayduchenko, I. A.; Fedorov, G. E.; Stepanova, T. S.; Titova, N.; Voronov, B. M.; But, D.; Coquillat, D.; Diakonova, N.; Knap, W.; Goltsman, G. N.
	Title	Asymmetric devices based on carbon nanotubes as detectors of sub-THz radiation			Type	Conference Article
	Year	2016	Publication	J. Phys.: Conf. Ser.	Abbreviated Journal	J. Phys.: Conf. Ser.
	Volume	741	Issue		Pages	012143 (1 to 6)
	Keywords	carbon nanotubes, CNT
	Abstract	Demand for efficient terahertz (THz) radiation detectors resulted in intensive study of the asymmetric carbon nanostructures as a possible solution for that problem. In this work, we systematically investigate the response of asymmetric carbon nanodevices to sub-terahertz radiation using different sensing elements: from dense carbon nanotube (CNT) network to individual CNT. We conclude that the detectors based on individual CNTs both semiconducting and quasi-metallic demonstrate much stronger response in sub-THz region than detectors based on disordered CNT networks at room temperature. We also demonstrate the possibility of using asymmetric detectors based on CNT for imaging in the THz range at room temperature. Further optimization of the device configuration may result in appearance of novel terahertz radiation detectors.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1742-6588	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1336
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	Author	Fedorov, G.; Kardakova, A.; Gayduchenko, I.; Voronov, B. M.; Finkel, M.; Klapwijk, T. M.; Goltsman, G.
	Title	Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-THz radiation			Type	Abstract
	Year	2014	Publication	Proc. 25^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 25^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	71
	Keywords	carbon nanotubes, CNT
	Abstract	This work reports on the voltage response of asymmetric carbon nanotube devices to sub-THz radiation at the frequency of 140 GHz. The devices contain CNT’s, which are over their length partially suspended and partially Van der Waals bonded to a SiO 2 substrate, causing a difference in thermal contact. Different heat sinking of CNTs by source and drain gives rise to temperature gradient and consequent thermoelectric power (TEP) as such a device is exposed to the sub-THz radiation. Sign of the DC signal, its power and gate voltage dependence observed at room temperature are consistent with this scenario. At liquid helium temperature the observed response is more complex. DC voltage signal of an opposite sign is observed in a narrow range of gate voltages at low temperatures and under low radiation power. We argue that this may indicate a true photovoltaic response from small gap (less than 10meV) CNT’s, an effect never reported before. While it is not clear if the observed effects can be used to develop efficient THz detectors we note that the responsivity of our devices exceeds that of CNT based devices in microwave or THz range reported before at room temperature. Besides at 4.2 K notable increase of the sample conductance (at least four-fold) is observed. Our recent results with asymmetric carbon nanotube devices response to THz radiation (2.5 THz) will also be presented.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1361
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	Author	Fedorov, G. E.; Stepanova, T. S.; Gazaliev, A. S.; Gaiduchenko, I. A.; Kaurova, N. S.; Voronov, B. M.; Goltzman, G. N.
	Title	Asymmetric devices based on carbon nanotubes for terahertz-range radiation detection			Type	Journal Article
	Year	2016	Publication	Semicond.	Abbreviated Journal	Semicond.
	Volume	50	Issue	12	Pages	1600-1603
	Keywords	carbon nanotubes, CNT detectors
	Abstract	Various asymmetric detecting devices based on carbon nanotubes (CNTs) are studied. The asymmetry is understood as inhomogeneous properties along the conducting channel. In the first type of devices, an inhomogeneous morphology of the CNT grid is used. In the second type of devices, metals with highly varying work functions are used as the contact material. The relation between the sensitivity and detector configuration is analyzed. Based on the data obtained, approaches to the development of an efficient detector of terahertz radiation, based on carbon nanotubes are proposed.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1063-7826	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1776
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	Author	Akhmadishina, K. F.; Bobrinetskiy, I. I.; Komarov, I. A.; Malovichko, A. M.; Nevolin, V. K.; Fedorov, G. E.; Golovin, A. V.; Zalevskiy, A. O.; Aidarkhanov, R. D.
	Title	Fast-response biological sensors based on single-layer carbon nanotubes modified with specific aptamers			Type	Journal Article
	Year	2015	Publication	Semicond.	Abbreviated Journal	Semicond.
	Volume	49	Issue	13	Pages	1749-1753
	Keywords	carbon nanotubes, CNT detectors
	Abstract	The possibility of the fabrication of a fast-response biological sensor based on a composite of single-layer carbon nanotubes and aptamers for the specific detection of proteins is shown. The effect of modification of the surface of the carbon nanotubes on the selectivity and sensitivity of the sensors is investigated. It is shown that carboxylated nanotubes have a better selectivity for detecting thrombin.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1063-7826	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1783
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	Author	Dube, I.; Jiménez, D.; Fedorov, G.; Boyd, A.; Gayduchenko, I.; Paranjape, M.; Barbara, P.
	Title	Understanding the electrical response and sensing mechanism of carbon-nanotube-based gas sensors			Type	Journal Article
	Year	2015	Publication	Carbon	Abbreviated Journal	Carbon
	Volume	87	Issue		Pages	330-337
	Keywords	carbon nanotubes, CNT detectors, field effect transistors, FET
	Abstract	Gas sensors based on carbon nanotube field effect transistors (CNFETs) have outstanding sensitivity compared to existing technologies. However, the lack of understanding of the sensing mechanism has greatly hindered progress on calibration standards and customization of these nano-sensors. Calibration requires identifying fundamental transistor parameters and establishing how they vary in the presence of a gas. This work focuses on modeling the electrical response of CNTFETs in the presence of oxidizing (NO2) and reducing (NH3) gases and determining how the transistor characteristics are affected by gas-induced changes of contact properties, such as the Schottky barrier height and width, and by the doping level of the nanotube. From the theoretical fits of the experimental transfer characteristics at different concentrations of NO2 and NH3, we find that the CNTFET response can be modeled by introducing changes in the Schottky barrier height. These changes are directly related to the changes in the metal work function of the electrodes that we determine experimentally, independently, with a Kelvin probe. Our analysis yields a direct correlation between the ON – current and the changes in the electrode metal work function. Doping due to molecules adsorbed at the carbon-nanotube/metal interface also affects the transfer characteristics.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0008-6223	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1778
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	Author	Ryzhii, V.; Otsuji, T.; Ryzhii, M.; Leiman, V. G.; Fedorov, G.; Goltzman, G. N.; Gayduchenko, I. A.; Titova, N.; Coquillat, D.; But, D.; Knap, W.; Mitin, V.; Shur, M. S.
	Title	Two-dimensional plasmons in lateral carbon nanotube network structures and their effect on the terahertz radiation detection			Type	Journal Article
	Year	2016	Publication	J. Appl. Phys.	Abbreviated Journal	J. Appl. Phys.
	Volume	120	Issue	4	Pages	044501 (1 to 13)
	Keywords	carbon nanotubes, CNT detectors, plasmons
	Abstract	We consider the carrier transport and plasmonic phenomena in the lateral carbon nanotube (CNT) networks forming the device channel with asymmetric electrodes. One electrode is the Ohmic contact to the CNT network and the other contact is the Schottky contact. These structures can serve as detectors of the terahertz (THz) radiation. We develop the device model for collective response of the lateral CNT networks which comprise a mixture of randomly oriented semiconductor CNTs (s-CNTs) and quasi-metal CNTs (m-CNTs). The proposed model includes the concept of the collective two-dimensional (2D) plasmons in relatively dense networks of randomly oriented CNTs (CNT “felt”) and predicts the detector responsivity spectral characteristics exhibiting sharp resonant peaks at the signal frequencies corresponding to the 2D plasmonic resonances. The detection mechanism is the rectification of the ac current due the nonlinearity of the Schottky contact current-voltage characteristics under the conditions of a strong enhancement of the potential drop at this contact associated with the plasmon excitation. The detector responsivity depends on the fractions of the s- and m-CNTs. The burning of the near-contact regions of the m-CNTs or destruction of these CNTs leads to a marked increase in the responsivity in agreement with our experimental data. The resonant THz detectors with sufficiently dense lateral CNT networks can compete and surpass other THz detectors using plasmonic effects at room temperatures.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0021-8979	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1777
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	Author	Eletskii, A. V.; Sarychev, A. K.; Boginskaya, I. A.; Bocharov, G. S.; Gaiduchenko, I. A.; Egin, M. S.; Ivanov, A. V.; Kurochkin, I. N.; Ryzhikov, I. A.; Fedorov, G. E.
	Title	Amplification of a Raman scattering signal by carbon nanotubes			Type	Journal Article
	Year	2018	Publication	Dokl. Phys.	Abbreviated Journal	Dokl. Phys.
	Volume	63	Issue	12	Pages	496-498
	Keywords	carbon nanotubes, CNT, Raman scattering, RLS
	Abstract	The effect of Raman scattering (RLS) signal amplification by carbon nanotubes (CNTs) was studied. Single-layered nanotubes were synthesized by the chemical vapor deposition (CVD) method using methane as a carbon-containing gas. The object of study used was water, the Raman spectrum of which is rather well known. Amplification of the Raman scattering signal by several hundred percent was attained in our work. The maximum amplification of a Raman scattering signal was shown to be achieved at an optimal density of nanotubes on a substrate. This effect was due to the scattering and screening of plasmons excited in CNTs by neighboring nanotubes. The amplification mechanism and the possibilities of optimization for this effect were discussed on the basis of the theory of plasmon resonance in carbon nanotubes.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1028-3358	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1775
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	Author	Matyushkin, Y.; Kaurova, N.; Voronov, B.; Goltsman, G.; Fedorov, G.
	Title	On chip carbon nanotube tunneling spectroscopy			Type	Journal Article
	Year	2020	Publication	Fullerenes, Nanotubes and Carbon Nanostructures	Abbreviated Journal
	Volume	28	Issue	1	Pages	50-53
	Keywords	carbon nanotubes, CNT, scanning tunneling microscope, STM
	Abstract	We report an experimental study of the band structure of individual carbon nanotubes (SCNTs) based on investigation of the tunneling density of states, i.e. tunneling spectroscopy. A common approach to this task is to use a scanning tunneling microscope (STM). However, this approach has a number of drawbacks, to overcome which, we propose another method – tunneling spectroscopy of SCNTs on a chip using a tunneling contact. This method is simpler, cheaper and technologically advanced than the STM. Fabrication of a tunnel contact can be easily integrated into any technological route, therefore, a tunnel contact can be used, for example, as an additional tool in characterizing any devices based on individual CNTs. In this paper we demonstrate a simple technological procedure that results in fabrication of good-quality tunneling contacts to carbon nanotubes.
	Address
	Corporate Author				Thesis
	Publisher	Taylor & Francis	Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	doi:10.1080/1536383X.2019.1671365			Serial	1269
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	Author	Fedorov, G.; Kardakova, A.; Gayduchenko, I.; Charayev, I.; Voronov, B.M.; Finkel, M.; Klapwijk, T.M.; Morozov, S.; Presniakov, M.; Bobrinetskiy, I.; Ibragimov, R.; Goltsman, G.
	Title	Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-terahertz radiation			Type	Journal Article
	Year	2013	Publication	Appl. Phys. Lett.	Abbreviated Journal	Appl. Phys. Lett.
	Volume	103	Issue	18	Pages	181121 (1 to 5)
	Keywords	carbon nanotubes, CNT, THz radiation, SiO2 substrate
	Abstract	We report on the voltage response of carbon nanotube devices to sub-terahertz (THz) radiation. The devices contain carbon nanotubes (CNTs), which are over their length partially suspended and partially Van der Waals bonded to a SiO2 substrate, causing a difference in thermal contact. We observe a DC voltage upon exposure to 140 GHz radiation. Based on the observed gate voltage and power dependence, at different temperatures, we argue that the observed signal is both thermal and photovoltaic. The room temperature responsivity in the microwave to THz range exceeds that of CNT based devices reported before. Authors thank Professor P. Barbara for providing the catalyst for CNT growth and Dr. N. Chumakov and V. Rylkov for stimulating discussions. The work was supported by the RFBR (Grant No. 12-02-01291-a) and by the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007). G.F. acknowledges support of the RFBR grant 12-02-01005-a.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0003-6951	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1171
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	Author	Yang, Y.; Fedorov, G.; Shafranjuk, S. E.; Klapwijk, T. M.; Cooper, B. K.; Lewis, R. M.; Lobb, C. J.; Barbara, P.
	Title	Electronic transport and possible superconductivity at Van Hove singularities in carbon nanotubes			Type	Journal Article
	Year	2015	Publication	Nano Lett.	Abbreviated Journal	Nano Lett.
	Volume	15	Issue	12	Pages	7859-7866
	Keywords	carbon nanotubes, CNT, tunable superconductivity, van Hove singularities
	Abstract	Van Hove singularities (VHSs) are a hallmark of reduced dimensionality, leading to a divergent density of states in one and two dimensions and predictions of new electronic properties when the Fermi energy is close to these divergences. In carbon nanotubes, VHSs mark the onset of new subbands. They are elusive in standard electronic transport characterization measurements because they do not typically appear as notable features and therefore their effect on the nanotube conductance is largely unexplored. Here we report conductance measurements of carbon nanotubes where VHSs are clearly revealed by interference patterns of the electronic wave functions, showing both a sharp increase of quantum capacitance, and a sharp reduction of energy level spacing, consistent with an upsurge of density of states. At VHSs, we also measure an anomalous increase of conductance below a temperature of about 30 K. We argue that this transport feature is consistent with the formation of Cooper pairs in the nanotube.
	Address	Department of Physics, Georgetown University , Washington, District of Columbia 20057, United States
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1530-6984	ISBN		Medium
	Area		Expedition		Conference
	Notes	PMID:26506109; Suuplementary info (attached to pdf) DOI: 10.1021/acs.nanolett.5b02564			Approved	no
	Call Number				Serial	1782
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	Author	Pyatkov, F.; Khasminskaya, S.; Kovalyuk, V.; Hennrich, F.; Kappes, M. M.; Goltsman, G. N.; Pernice, W. H. P.; Krupke, R.
	Title	Sub-nanosecond light-pulse generation with waveguide-coupled carbon nanotube transducers			Type	Journal Article
	Year	2017	Publication	Beilstein J. Nanotechnol.	Abbreviated Journal	Beilstein J. Nanotechnol.
	Volume	8	Issue		Pages	38-44
	Keywords	carbon nanotubes; CNT; infrared; integrated optics devices; nanomaterials
	Abstract	Carbon nanotubes (CNTs) have recently been integrated into optical waveguides and operated as electrically-driven light emitters under constant electrical bias. Such devices are of interest for the conversion of fast electrical signals into optical ones within a nanophotonic circuit. Here, we demonstrate that waveguide-integrated single-walled CNTs are promising high-speed transducers for light-pulse generation in the gigahertz range. Using a scalable fabrication approach we realize hybrid CNT-based nanophotonic devices, which generate optical pulse trains in the range from 200 kHz to 2 GHz with decay times below 80 ps. Our results illustrate the potential of CNTs for hybrid optoelectronic systems and nanoscale on-chip light sources.
	Address	Department of Materials and Earth Sciences, Technische Universitat Darmstadt, Darmstadt 64287, Germany
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2190-4286	ISBN		Medium
	Area		Expedition		Conference
	Notes	PMID:28144563; PMCID:PMC5238692			Approved	no
	Call Number	RPLAB @ kovalyuk @			Serial	1109
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	Author	Lang, P. T.; Leipold, I.; Knott, W. J.; Semenov, A. D.; Gol'tsman, G. N.; Renk, K. F.
	Title	New far-infrared laser lines from CH3Cl and CH3Br optically pumped with a continuously tunable high pressure CO2 laser			Type	Journal Article
	Year	1991	Publication	Appl. Phys. B	Abbreviated Journal	Appl. Phys. B
	Volume	53	Issue	4	Pages	207-212
	Keywords	CO2 IR lasers, applications, CH3Cl, CH3Br
	Abstract	In this paper we report on the detection of new far-infrared laser lines from CH3Cl and CH3Br optically pumped with a continuously tunable high pressure CO2 laser. We found 80 new lines for CH3Cl and 9 new lines for CH3Br in the frequency region between 16 cm−1 and 41 cm−1, all due to stimulated Raman scattering. For the Raman gain regions bandwidths up to about 700 MHz were found. We also observed high intensity short far-infrared laser pulses of durations in the nanosecond regime.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0721-7269	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1678
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	Author	Lang, P. T.; Knott, W. J.; Leipold, I.; Renk, K. F.; Semenov, A. D.; Gol'tsman, G. N.
	Title	Generation and detection of tunable ultrashort infrared and far-infrared radiation pulses of high intensity			Type	Journal Article
	Year	1992	Publication	Int. J. of Infrared and Millimeter Waves	Abbreviated Journal	Int. J. of Infrared and Millimeter Waves
	Volume	13	Issue	3	Pages	373-380
	Keywords	CO2 IR lasers, FIR
	Abstract	We report on generation and detection of intense pulsed radiation with frequency tunability in the infrared and far-infrared spectral regions. Infrared radiation is generated with a transversally electrically excited high pressure CO2 laser. A laser pulse of a total duration of about 300 ns consisted, due to self mode locking, of a series of single pulses, some with pulse durations of less than 450 ps and peak powers larger than 20 MW. Using these pulses for optical with durations less than 400 ps were obtained. For detection a new ultrafast superconducting detector was used.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0195-9271	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1671
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	Author	Zubkova, E.; Golikov, A.; An, P.; Kovalyuk, V.; Korneev, A.; Ferrari, S.; Pernice, W.; Goltsman, G.
	Title	CWDM demultiplexer using anti-reflection, contra-directional couplers based on silicon nitride rib waveguide			Type	Conference Article
	Year	2019	Publication	J. Phys.: Conf. Ser.	Abbreviated Journal	J. Phys.: Conf. Ser.
	Volume	1410	Issue		Pages	012179
	Keywords	coarse wavelength-division multiplexing, Si3N4 rib waveguide
	Abstract	We report on the development and fabrication of a 9-channel coarse wavelength-division multiplexing for telecommunication wavelengths (1550 nm) using anti-reflection contra-directional couplers, based on silicon nitride (Si3N4) rib waveguide. The transmitted and reflected spectrum in each channel of the demultiplexer were measured. The average full width at half maximum of the transmitted (reflected) spectra is about 3 nm.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1742-6588	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1183
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	Author	Гершензон, Е. М.; Литвак-Горская, Л. Б.; Рабинович, Р. И.
	Title	Отрицательное магнитосопротивление в случае проводимости по верхней зоне Хаббарда			Type	Journal Article
	Year	1983	Publication	Физика и техника полупроводников	Abbreviated Journal	Физика и техника полупроводников
	Volume	17	Issue	10	Pages	1873-1876
	Keywords	compensated n-InSb, Hubbard upper zone conductivity, negative magnetoresistance
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1763
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	Author	Гальперин, Ю. М.; Гершензон, Е. М.; Дричко, И. Л.; Литвак-Горская, Л. Б.
	Title	Кинетические явления в компенсированном n-InSb при низких температурах			Type	Journal Article
	Year	1990	Publication	Физика и техника полупроводников	Abbreviated Journal	Физика и техника полупроводников
	Volume	24	Issue	1	Pages	3-24
	Keywords	compensated n-InSb, impurities
	Abstract	Представлен обзор результатов цикла исследований природы электропроводности предельно очищенных образцов антимонида индия n-типа. Рассмотрены способы определения концентрации доноров и степени компенсации в этом материале, обсуждается роль свободных и локализованных на донорах электронов в электропроводности при гелиевых температурах. Обсуждение основано на анализе результатов исследования гальваномагнитных явлений, поглощения СВЧ излучения миллиметрового и субмиллиметрового диапазонов и ультразвука. Рассмотрены способы определения характеристик материала на основе комплекса результатов, полученных с помощью указанных методов. Обсуждается также фотопроводимость по примесям в n-InSb.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1756
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	Author	Tikhonov, V. V.; Boyarskii, D. A.; Polyakova, O. N.; Dzardanov, A. L.; Goltsman, G. N.
	Title	Radiophysical and dielectric properties of ore minerals in 12--145 GHz frequency range			Type	Journal Article
	Year	2010	Publication	PIER B	Abbreviated Journal	PIER B
	Volume	25	Issue		Pages	349-367
	Keywords	complex permittivity, ore minerals
	Abstract	The paper discusses a retrieval technique of complex permittivity of ore minerals in frequency ranges of 12--38 GHz and 77--145 GHz. The method is based on measuring frequency dependencies of transmissivity and reflectivity of plate-parallel mineral samples. In the 12--38 GHz range, the measurements were conducted using a panoramic standing wave ratio and attenuation meter. In the 77--145 GHz range, frequency dependencies of transmissivity and reflectivity were obtained using millimeter-band spectrometer with backward-wave oscillators. The real and imaginary parts of complex permittivity of a mineral were determined solving an equation system for frequency dependencies of transmissivity and reflectivity of an absorbing layer located between two dielectric media. In the course of the work, minerals that are primary ores in iron, zinc, copper and titanium mining were investigated: magnetite, hematite, sphalerite, chalcopyrite, pyrite, and ilmenite.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
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	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ gujma @			Serial	639
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	Author	Gayduchenko, I.; Fedorov, G.; Titova, N.; Moskotin, M.; Obraztsova, E.; Rybin, M.; Goltsman, G.
	Title	Towards to the development of THz detectors based on carbon nanostructures			Type	Conference Article
	Year	2018	Publication	J. Phys.: Conf. Ser.	Abbreviated Journal	J. Phys.: Conf. Ser.
	Volume	1092	Issue		Pages	012039 (1 to 4)
	Keywords	CVD graphene, carbon nanotubes, CNT, field effect transistors, FET, THz detectors
	Abstract	Demand for efficient terahertz radiation detectors resulted in intensive study of the carbon nanostructures as possible solution for that problem. In this work we investigate the response to sub-terahertz radiation of detectors with sensor elements based on CVD graphene as well as its derivatives – carbon nanotubes (CNTs). The devices are made in configuration of field effect transistors (FET) with asymmetric source and drain (vanadium and gold) contacts and operate as lateral Schottky diodes. We show that at 300K semiconducting CNTs show better performance up to 300GHz with responsivity up to 100V/W, while quasi-metallic CNTs are shown to operate up to 2.5THz. At 300 K graphene detector exhibit the room-temperature responsivity from R = 15 V/W at f = 129 GHz to R = 3 V/W at f = 450 GHz. We find that at low temperatures (77K) the graphene lateral Schottky diodes responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. The obtained data allows for determination of the most promising directions of development of the technology of nanocarbon structures for the detection of THz radiation.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1742-6588	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1302
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	Author	Gershenzon, Ye. M.; Goltsman, G. N.; Yelantyev, A. I.; Petrova, Ye. B.; Ptitsina, N. G.; Filatov, V. S.
	Title	Lecture demonstrations of properties of superconductors and liquid helium			Type	Journal Article
	Year	1987	Publication	USSR Rept Phys. Math. JPRS UPM	Abbreviated Journal	USSR Rept Phys. Math. JPRS UPM
	Volume	24	Issue	7	Pages	51
	Keywords	demonstrations, lections
	Abstract	New demonstrations for low temperature physics courses are described. Two transparent Dewar vacuum flasks fitting one inside the other with the external flask for nitrogen and the internal flask for helium are used. The helium temperature can be regulated in the 4.2 to 1.6 K range and the effects of reducing helium to the superfluid state at 2.17 K can be shown: boiling abruptly stops and superfluid flow appears. In order to show the electric and magnetic characteristics of superconductivity, a superconducting NbTi solenoid containing nonsuperconducting wire and germanium and superconducting Nb materials with different critical temperatures is placed in the helium refrigerant vessel. The fall of the resistance at the critical temperatures can be shown. In order to show magnetic field and superconductive current flow properties a shunt of superconductive material is connected in parallel to the coil and is enclosed in a teflon container with a heater which can vary its temperature. When it is heated and not superconductive, magnetic field effects can be demonstrated and when it is unheated and superconducting a continuous current can be demonstrated.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
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	Notes				Approved	no
	Call Number				Serial	1704
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	Author	Tretyakov, I.; Svyatodukh, S.; Perepelitsa, A.; Ryabchun, S.; Kaurova, N.; Shurakov, A.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G.
	Title	Ag₂S QDs/Si heterostructure-based ultrasensitive SWIR range detector			Type	Journal Article
	Year	2020	Publication	Nanomaterials (Basel)	Abbreviated Journal	Nanomaterials (Basel)
	Volume	10	Issue	5	Pages	1-12
	Keywords	detector; quantum dots; short-wave infrared range; silicon
	Abstract	In the 20(th) century, microelectronics was revolutionized by silicon-its semiconducting properties finally made it possible to reduce the size of electronic components to a few nanometers. The ability to control the semiconducting properties of Si on the nanometer scale promises a breakthrough in the development of Si-based technologies. In this paper, we present the results of our experimental studies of the photovoltaic effect in Ag2S QD/Si heterostructures in the short-wave infrared range. At room temperature, the Ag2S/Si heterostructures offer a noise-equivalent power of 1.1 x 10(-10) W/ radicalHz. The spectral analysis of the photoresponse of the Ag2S/Si heterostructures has made it possible to identify two main mechanisms behind it: the absorption of IR radiation by defects in the crystalline structure of the Ag2S QDs or by quantum QD-induced surface states in Si. This study has demonstrated an effective and low-cost way to create a sensitive room temperature SWIR photodetector which would be compatible with the Si complementary metal oxide semiconductor technology.
	Address	Laboratory of nonlinear optics, Zavoisky Physical-Technical Institute of the Russian Academy of Sciences, Kazan 420029, Russia
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	English	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2079-4991	ISBN		Medium
	Area		Expedition		Conference
	Notes	PMID:32365694; PMCID:PMC7712218			Approved	no
	Call Number				Serial	1151
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	Author	Maslennikov, S. N.; Finkel, M. I.; Antipov, S. V.; Polyakov, S. L.; Zhang, W.; Ozhegov, R.; Vachtomin, Yu. B.; Svechnikov, S. I.; Smirnov, K. V.; Korotetskaya, Yu. P.; Kaurova, N. S.; Gol'tsman, G. N.; Voronov, B. M.
	Title	Spiral antenna coupled and directly coupled NbN HEB mixers in the frequency range from 1 to 70 THz			Type	Conference Article
	Year	2006	Publication	Proc. 17^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 17^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	177-179
	Keywords	directly coupled NbN HEB mixers
	Abstract	We investigate both antenna coupled and directly coupled HEB mixers at several LO frequencies within the range of 2.5 THz to 70 THz. H20 (2.5+10.7 THz), and CO2 (30 THz) gas discharge lasers are used as the local oscillators. The noise temperature of antenna coupled mixers is measured at LO frequencies of 2.5 THz, 3.8 THz, and 30 THz. The results for both antenna coupled and directly coupled mixer types are compared. The devices with in—plane dimensions of 5x5 ,um 2 are pumped by LO radiation at 10.7 THz. The directly coupled HEB demonstrates nearly flat dependence of responsivity on frequency in the range of 25+64 THz.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Paris, France	Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	386
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	Author	Семенов, А. В.; Корнеев, А. А.; Смирнов, А. В.; Смирнов, К. В.; Ожегов, Р. В.; Окунев, О. В.; Гольцман, Г. Н.; Девятов, И. А.
	Title	Линейные по мощности поглощаемого излучения поправки к спектральным функциям «грязного» сверхпроводника и отклик сверхпроводниковых детекторов			Type	Journal Article
	Year	2012	Publication	Преподаватель ХХI век	Abbreviated Journal
	Volume		Issue	3	Pages	216-220
	Keywords	dirty superconductor film
	Abstract	В статье развит метод расчета малых поправок к спектральным функциям пленки «грязного» сверхпроводника, возникающих под действием поглощаемой мощности электромагнитного излучения. Метод пригоден в случае спектральных функций произвольного вида, что позволяет применять его для расчета отклика сверхпроводниковых детекторов излучения различного типа.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1822
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	Author	Semenov, A. V.; Devyatov, I. A.; Korneev, A. A.; Smirnov, K. V.; Goltsman, G. N.; Melnikov, A. P.
	Title	Derivation of expression for thermodynamic potential of “dirty” superconductor			Type	Journal Article
	Year	2012	Publication	Rus. J. Radio Electron.	Abbreviated Journal	Rus. J. Radio Electron.
	Volume		Issue	4	Pages
	Keywords	dirty superconductor, Usadel theory, thermodynamic potential
	Abstract	We derive a formula for thermodynamic potential of dirty superconductor which express it via isotropic quasiclassical Green functions of Usadel theory. Our result allows unify description of dynamic processes and fluctuations in superconducting nano-electronic devices.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes	7 pages			Approved	no
	Call Number				Serial	1824
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	Author	Sergeev, A.; Karasik, B. S.; Ptitsina, N. G.; Chulkova, G. M.; Il'in, K. S.; Gershenzon, E. M.
	Title	Electron–phonon interaction in disordered conductors			Type	Journal Article
	Year	1999	Publication	Phys. Rev. B Condens. Matter	Abbreviated Journal	Phys. Rev. B Condens. Matter
	Volume	263-264	Issue		Pages	190-192
	Keywords	disordered conductors, electron-phonon interaction
	Abstract	The electron–phonon interaction is strongly modified in conductors with a small value of the electron mean free path (impure metals, thin films). As a result, the temperature dependencies of both the inelastic electron scattering rate and resistivity differ significantly from those for pure bulk materials. Recent complex measurements have shown that modified dependencies are well described at K by the electron interaction with transverse phonons. At helium temperatures, available data are conflicting, and cannot be described by an universal model.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0921-4526	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1765
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	Author	Sergeev, A.; Mitin, V.
	Title	Electron-phonon interaction in disordered conductors: Static and vibrating scattering potentials			Type	Journal Article
	Year	2000	Publication	Phys. Rev. B.	Abbreviated Journal	Phys. Rev. B.
	Volume	61	Issue	9	Pages	6041-6047
	Keywords	disordered conductors, scattering potential, electron-phonon interaction
	Abstract	Employing the Keldysh diagram technique, we calculate the electron-phonon energy relaxation rate in a conductor with the vibrating and static δ-correlated random electron-scattering potentials. If the scattering potential is completely dragged by phonons, this model yields the Schmid’s result for the inelastic electron-scattering rate τ−1e−ph. At low temperatures the effective interaction decreases due to disorder, and τ−1e−ph∝T4l (l is the electron mean-free path). In the presense of the static potential, quantum interference of numerous scattering processes drastically changes the effective electron-phonon interaction. In particular, at low temperatures the interaction increases, and τ−1e−ph∝T2/l. Along with an enhancement of the interaction, which is observed in disordered metallic films and semiconducting structures at low temperatures, the suggested model allows us to explain the strong sensitivity of the electron relaxation rate to the microscopic quality of a particular film.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0163-1829	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	307
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	Author	Ptitsina, N. G.; Chulkova, G. M.; Il’in, K. S.; Sergeev, A. V.; Pochinkov, F. S.; Gershenzon, E. M.; Gershenson, M. E.
	Title	Electron-phonon interaction in disordered metal films: The resistivity and electron dephasing rate			Type	Journal Article
	Year	1997	Publication	Phys. Rev. B	Abbreviated Journal	Phys. Rev. B
	Volume	56	Issue	16	Pages	10089-10096
	Keywords	disordered metal films, electron-phonon interaction, electron dephasing rate, resistivity
	Abstract	The temperature dependence of the resistance of films of Al, Be, and NbC with small values of the electron mean free path l=1.5–10nm has been measured at 4.2–300 K. The resistance of all the films contains a T2 contribution that is proportional to the residual resistance; this contribution has been attributed to the interference between the elastic electron scattering and the electron-phonon scattering. Fitting the data to the theory of the electron-phonon-impurity interference (M. Yu. Reiser and A. V. Sergeev, Zh. Eksp. Teor. Fiz. 92, 224 (1987) [Sov. Phys. JETP 65, 1291 (1987)]), we obtain constants of interaction of the electrons with transverse phonons, and estimate the contribution of this interaction to the electron dephasing rate in thin films of Au, Al, Be, Nb, and NbC. Our estimates are in a good agreement with the experimental data on the inelastic electron-phonon scattering in these films. This indicates that the interaction of electrons with transverse phonons controls the electron-phonon relaxation rate in thin-metal films over a broad temperature range.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0163-1829	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1766
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	Author	Kardakova, A.; Finkel, M.; Morozov, D.; Kovalyuk, V.; An, P.; Dunscombe, C.; Tarkhov, M.; Mauskopf, P.; Klapwijk, T.M.; Goltsman, G.
	Title	The electron-phonon relaxation time in thin superconducting titanium nitride films			Type	Journal Article
	Year	2013	Publication	Appl. Phys. Lett.	Abbreviated Journal	Appl. Phys. Lett.
	Volume	103	Issue	25	Pages	252602 (1 to 4)
	Keywords	disordered TiN films, electron-phonon relaxation time
	Abstract	We report on the direct measurement of the electron-phonon relaxation time, τeph, in disordered TiN films. Measured values of τeph are from 5.5 ns to 88 ns in the 4.2 to 1.7 K temperature range and consistent with a T−3 temperature dependence. The electronic density of states at the Fermi level N0 is estimated from measured material parameters. The presented results confirm that thin TiN films are promising candidate-materials for ultrasensitive superconducting detectors. The work was supported by the Ministry of Education and Science of the Russian Federation, Contract No. 14.B25.31.0007 and by the RFBR Grant No. 13-02-91159.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ kovalyuk @			Serial	941
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	Author	Elmanov, I.; Elmanova, A.; Komrakova, S.; Golikov, A.; Kaurova, N.; Kovalyuk, V.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A.
	Title	Method for determination of resists parameters for photonic – integrated circuits e-beam lithography on silicon nitride platform			Type	Conference Article
	Year	2019	Publication	EPJ Web Conf.	Abbreviated Journal	EPJ Web Conf.
	Volume	220	Issue		Pages	03012
	Keywords	e-beam lithography, Si3N4
	Abstract	In the work the thicknesses of the e-beam resists ZEP 520A and ma-N 2400 by using non-destructive method were measured, as well as recipe for the high ratio between the Si3N4 and the resists etching rate was determined. The work has a practical application for e-beam lithography of photonic-integrated circuits and nanophotonics devices based on silicon nitride platform.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2100-014X	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1189
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	Author	Gershenzon, E.M.; Gol'tsman, G.N.; Dzardanov, A.L.; Kuznetsov, E.A.
	Title	Superconducting UHF-limiter based on electron heating up			Type	Journal Article
	Year	1992	Publication	Sverkhprovodimost': Fizika, Khimiya, Tekhnika	Abbreviated Journal	Sverkhprovodimost': Fizika, Khimiya, Tekhnika
	Volume	5	Issue	11	Pages	2164-2170
	Keywords	electron heating, applications
	Abstract	The results of experimental investigation of fast-action 5HF-limiter are presented; the limiter is based on the utilization of electron hetaing phenomenon in thin superconducting films. The design of SHF-limiter, which is intended for operation at liquid helium temperatures and which has the form of a section of superconducting NbN microstrip line for 1-12 GHz rang, is described.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0235-8964	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1669
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	Author	Gershenzon, E.; Goltsman, G.; Elantev, A.; Kagane, M.
	Title	Energy-spectrum of small donors and acceptors in germanium and effect of magnetic-field on it			Type	Conference Article
	Year	1978	Publication	Izv. Akad. Nauk SSSR, Seriya Fizicheskaya	Abbreviated Journal	Izv. Akad. Nauk SSSR, Seriya Fizicheskaya
	Volume	42	Issue	6	Pages	1142-1148
	Keywords	energy spectrum, Ge, magnetic field
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1722
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	Author	Saveskul, N. A.; Titova, N. A.; Baeva, E. M.; Semenov, A. V.; Lubenchenko, A. V.; Saha, S.; Reddy, H.; Bogdanov, S. I.; Marinero, E. E.; Shalaev, V. M.; Boltasseva, A.; Khrapai, V. S.; Kardakova, A. I.; Goltsman, G. N.
	Title	Superconductivity behavior in epitaxial TiN films points to surface magnetic disorder			Type	Journal Article
	Year	2019	Publication	Phys. Rev. Applied	Abbreviated Journal	Phys. Rev. Applied
	Volume	12	Issue	5	Pages	054001
	Keywords	epitaxial TiN films
	Abstract	We analyze the evolution of the normal and superconducting properties of epitaxial TiN films, characterized by high Ioffe-Regel parameter values, as a function of the film thickness. As the film thickness decreases, we observe an increase of the residual resistivity, that becomes dominated by diffusive surface scattering for d≤20nm. At the same time, a substantial thickness-dependent reduction of the superconducting critical temperature is observed compared to the bulk TiN value. In such high-quality material films, this effect can be explained by a weak magnetic disorder residing in the surface layer with a characteristic magnetic defect density of approximately 1012cm−2. Our results suggest that surface magnetic disorder is generally present in oxidized TiN films.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2331-7019	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1166
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	Author	Moskotin, M. V.; Gayduchenko, I. A.; Goltsman, G. N.; Titova, N.; Voronov, B. M.; Fedorov, G. F.; Pyatkov, F.; Hennrich, F.
	Title	Bolometric effect for detection of sub-THz radiation with devices based on carbon nanotubes			Type	Conference Article
	Year	2018	Publication	J. Phys.: Conf. Ser.	Abbreviated Journal	J. Phys.: Conf. Ser.
	Volume	1124	Issue		Pages	051050 (1 to 5)
	Keywords	field-effect transistor, FET, carbon nanotube, CNT
	Abstract	In this work we investigate the response on THz radiation of a FET device based on an individual carbon nanotube conductance channel. It was already shown, that the response of such devices can be either of diode rectification origin or of thermoelectric effect origin or of their combination. In this work we demonstrate that at 77K and 8K temperatures strong bolometric effect also makes a significant contribution to the response.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1742-6588	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1301
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	Author	Belosevich, V. V.; Gayduchenko, I. A.; Titova, N. A.; Zhukova, E. S.; Goltsman, G. N.; Fedorov, G. E.; Silaev, A. A.
	Title	Response of carbon nanotube film transistor to the THz radiation			Type	Conference Article
	Year	2018	Publication	EPJ Web Conf.	Abbreviated Journal	EPJ Web Conf.
	Volume	195	Issue		Pages	05012 (1 to 2)
	Keywords	field-effect transistor, FET, carbon nanotube, CNT
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2100-014X	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1317
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	Author	Matyushkin, Y. E.; Gayduchenko, I. A.; Moskotin, M. V.; Goltsman, G. N.; Fedorov, G. E.; Rybin, M. G.; Obraztsova, E. D.
	Title	Graphene-layer and graphene-nanoribbon FETs as THz detectors			Type	Conference Article
	Year	2018	Publication	J. Phys.: Conf. Ser.	Abbreviated Journal	J. Phys.: Conf. Ser.
	Volume	1124	Issue		Pages	051054
	Keywords	field-effect transistor, FET, monolayer graphene, graphene nanoribbons
	Abstract	We report on detection of sub-THz radiation (129-430 GHz) using graphene based asymmetric field-effect transistor (FET) structures with different channel geometry: monolayer graphene, graphene nanoribbons. In all devices types we observed the similar trends of response on sub-THz radiation. The response fell with increasing frequency at room temperature, but increased with increasing frequency at 77 K. Our calculations show that the change in the trend of the frequency dependence at 77 K is associated with the appearance of plasma waves in the graphene channel. Unusual properties of p-n junctions in graphene are highlighted using devices of special geometry.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1742-6588	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1300
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	Author	Gayduchenko, I.; Xu, S. G.; Alymov, G.; Moskotin, M.; Tretyakov, I.; Taniguchi, T.; Watanabe, K.; Goltsman, G.; Geim, A. K.; Fedorov, G.; Svintsov, D.; Bandurin, D. A.
	Title	Tunnel field-effect transistors for sensitive terahertz detection			Type	Journal Article
	Year	2021	Publication	Nat. Commun.	Abbreviated Journal	Nat. Commun.
	Volume	12	Issue	1	Pages	543
	Keywords	field-effect transistors, bilayer graphene, BLG
	Abstract	The rectification of electromagnetic waves to direct currents is a crucial process for energy harvesting, beyond-5G wireless communications, ultra-fast science, and observational astronomy. As the radiation frequency is raised to the sub-terahertz (THz) domain, ac-to-dc conversion by conventional electronics becomes challenging and requires alternative rectification protocols. Here, we address this challenge by tunnel field-effect transistors made of bilayer graphene (BLG). Taking advantage of BLG's electrically tunable band structure, we create a lateral tunnel junction and couple it to an antenna exposed to THz radiation. The incoming radiation is then down-converted by the tunnel junction nonlinearity, resulting in high responsivity (>4 kV/W) and low-noise (0.2 pW/[Formula: see text]) detection. We demonstrate how switching from intraband Ohmic to interband tunneling regime can raise detectors' responsivity by few orders of magnitude, in agreement with the developed theory. Our work demonstrates a potential application of tunnel transistors for THz detection and reveals BLG as a promising platform therefor.
	Address	Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA. bandurin@mit.edu
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	English	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2041-1723	ISBN		Medium
	Area		Expedition		Conference
	Notes	PMID:33483488; PMCID:PMC7822863			Approved	no
	Call Number				Serial	1261
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	Author	Kuzin, A.; Kovalyuk, V.; Golikov, A.; Prokhodtsov, A.; Marakhin, A.; Ferrari, S.; Pernice, W.; Gippius, N.; Goltsman, G.
	Title	Efficiency of focusing grating couplers versus taper length and angle			Type	Conference Article
	Year	2019	Publication	J. Phys.: Conf. Ser.	Abbreviated Journal	J. Phys.: Conf. Ser.
	Volume	1410	Issue		Pages	012181
	Keywords	focusing grating coupler
	Abstract	Here we experimentally studied dependence of a focusing grating coupler efficiency versus taper length and angle on silicon nitride platform. As a result, we obtained a dependence for the efficiency of a focusing grating coupler on the parameters of the taper length and angle.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1742-6588	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1184
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	Author	Loudkov, D.; Tong, C.-Y. E.; Marrone, D. P.; Ryabchun, S.; Paine, S. N.; Blundell, R.
	Title	Transmission measurements of infrared filters for low-noise terahertz receiver applications			Type	Conference Article
	Year	2005	Publication	Proc. 16^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 16^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	354-357
	Keywords	FTS, Zitex, alkali halide, crystalline quartz, Parylene, polyethylene, IR filters, transmission, THz applications
	Abstract	Infrared (IR) filters are very important to the efficient operation of cryogenic receivers. Usually, such filters are mounted on the radiation shield of the cryostat to reduce the heat load to the 4 K stage. Insufficient filtering may cause the temperature of the mixing element in a receiver to be excessively warm, leading to degradation in sensitivity. These filters should be effective in blocking the room temperature IR radiation from outside the cryostat, yet should be transparent across the desired signal frequency band. In the Terahertz frequency range, which is close to the infrared, it is difficult to find an inexpensive low- loss material that can provide the required IR blocking capacity. We present transmission measurements, made using a Fourier Transform Spectrometer (FTS), of a number of potential infrared filters between 0.4 and 1.6 THz. The filters tested include the widely-used, Teflon-based, Zitex-A and Zitex-G films, alkali halide based infrared filter, and crystalline quartz coated with Parylene, and polyethylene films.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1473
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	Author	Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G.
	Title	Investigation of excited donor states in GaAs			Type	Journal Article
	Year	1974	Publication	Sov. Phys. Semicond.	Abbreviated Journal	Sov. Phys. Semicond.
	Volume	7	Issue	10	Pages	1248-1250
	Keywords	GaAs, excited donor states
	Abstract
	Address
	Corporate Author				Thesis
	Publisher	Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa	Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1733
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	Author	Rasulova, G. K.; Pentin, I. V.; Goltsman, G. N.
	Title	Terahertz emission from a weakly-coupled GaAs/AlGaAs superlattice biased into three different modes of current self-oscillations			Type	Journal Article
	Year	2019	Publication	AIP Advances	Abbreviated Journal	AIP Advances
	Volume	9	Issue	10	Pages	105220
	Keywords	GaAs/AlGaAs superlattice, SL, NbN HEB
	Abstract	Radio-frequency modulated terahertz (THz) emission power from weakly-coupled GaAs/AlGaAs superlattice (SL) has been increased by parallel connection of several SL mesas. Each SL mesa is a self-oscillator with its own oscillation frequency and mode. In coupled non-identical SL mesas biased at different voltages within the hysteresis loop the chaotic, quasiperiodic and frequency-locked modes of self-oscillations of current arise. THz emission was detected when three connected in parallel SL mesas were biased into the frequency-locked and quasiperiodic modes of self-oscillations of current, while in the chaotic mode of those it falls to the noise level.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2158-3226	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1274
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	Author	Rasulova, G. K.; Brunkov, P. N.; Pentin, I. V.; Kovalyuk, V. V.; Gorshkov, K. N.; Kazakov, A. Y.; Ivanov, S. Y.; Egorov, A. Y.; Sakseev, D. A.; Konnikov, S. G.
	Title	Mutual synchronization of two coupled self-oscillators based on GaAs/AlGaAs superlattices			Type	Journal Article
	Year	2011	Publication	Tech. Phys.	Abbreviated Journal	Tech. Phys.
	Volume	56	Issue	6	Pages	826-830
	Keywords	GaAs/AlGaAs superlattices
	Abstract	The interaction of self-oscillators based on 30-period weakly coupled GaAs/AlGaAs superlattices is studied. The action of one self-oscillator on the other was observed for a constant bias voltage in the absence of generation of self-sustained oscillations in one of the oscillators. It is shown that induced oscillations in a forced oscillator appear due to excitation of oscillations in the system of coupled oscillators forming the electric-field domain wall at the frequency of one of the higher harmonics of a forcing oscillation.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1063-7842	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1214
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	Author	Gershenzon, E. M.; Goltsman, G.; Orlova, S.; Ptitsina, N.; Gurvich, Y.
	Title	Germanium hot-electron narrow-band detector			Type	Journal Article
	Year	1971	Publication	Sov. Radio Engineering And Electronic Physics	Abbreviated Journal	Sov. Radio Engineering And Electronic Physics
	Volume	16	Issue	8	Pages	1346
	Keywords	Ge HEB detectors
	Abstract
	Address
	Corporate Author				Thesis
	Publisher	Scripps Clinic Res Foundation 476 Prospect St, La Jolla, Ca 92037	Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1741
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	Author	Goltsman, G. N.; Maliavkin, A. V.; Ptitsina, N. G.; Selevko, A. G.
	Title	Magnetic exciton spectroscopy in uniaxially compressed Ge at submillimeter waves			Type	Conference Article
	Year	1986	Publication	Izv. Akad. Nauk SSSR, Seriya Fizicheskaya	Abbreviated Journal	Izv. Akad. Nauk SSSR, Seriya Fizicheskaya
	Volume	50	Issue		Pages	280-281
	Keywords	Ge, axial compression loads, excitons, germanium, magnetic spectroscopy, submillimeter waves, Zeeman effect
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0367-6755	ISBN		Medium
	Area		Expedition		Conference	3rd Vsesoiuznyi Seminar po Opticheskomu Detektirovaniiu Magnitnykh Rezonansov v Tverdykh Telakh, Kiev, Ukrainian SSR, May 1985
	Notes				Approved	no
	Call Number				Serial	1708
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	Author	Воеводин, Е. И.; Гершензон, Е. М.; Гольцман, Г. Н.; Птицина, Н. Г.
	Title	Энергетический спектр мелких акцепторов в сильно одноосно деформированном Ge			Type	Journal Article
	Year	1989	Publication	Физика и техника полупроводников	Abbreviated Journal	Физика и техника полупроводников
	Volume	23	Issue	8	Pages	1356-1361
	Keywords	Ge, crystallography
	Abstract	Проведены исследования спектров фототермической ионизации мелких акцепторов (В, Аl) в Ge, предельно сжатом вдоль кристаллографической оси [100]. Из данных измерений с учетом теории построен энергетический спектр примесей. Показано, что энергии большого числа уровней четных и нечетных состояний хорошо соответствуют расчету, выполненному для примесей в анизотропном полупроводнике с параметром анизотропии γ=m∗⊥/m∗∥>1.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes	Duplicated as 1692			Approved	no
	Call Number				Serial	1691
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	Author	Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G.
	Title	Energy-spectrum of shallow acceptors in Ge deformed strongly by a uniaxial pressure			Type	Journal Article
	Year	1989	Publication	Sov. Phys. and Technics of Semiconductors	Abbreviated Journal	Sov. Phys. and Technics of Semiconductors
	Volume	23	Issue	8	Pages	843-846
	Keywords	Ge, crystallography
	Abstract	Проведены исследования спектров фототермической ионизации мелких акцепторов (В, Аl) в Ge, предельно сжатом вдоль кристаллографической оси [100]. Из данных измерений с учетом теории построен энергетический спектр примесей. Показано, что энергии большого числа уровней четных и нечетных состояний хорошо соответствуют расчету, выполненному для примесей в анизотропном полупроводнике с параметром анизотропии γ=m∗⊥/m∗∥>1.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes	Энергетический спектр мелких акцепторов в сильно одноосно деформированном Ge			Approved	no
	Call Number				Serial	1692
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	Author	Gershenzon, E. M.; Gurvich, Yu. A.; Orlova, S. L.; Ptitsina, N. G.
	Title	Cyclotron resonance of electrons in Ge in a quantizing magnetic field in the case of inelastic scattering by acoustic phonons			Type	Journal Article
	Year	1975	Publication	Sov. Phys. JETP	Abbreviated Journal	Sov. Phys. JETP
	Volume	40	Issue	2	Pages	311-315
	Keywords	Ge, cyclotron resonance
	Abstract	Results are presented of an experimental study of the linewidth of cyclotron resonance under strong quantization conditions on the scattering of electrons by acoustic phonons. The measurements were performed in the 2....{).4 mm wavelength range at temperatures between 10 and 1.4 OK. A number of singularities were observed in the temperature and frequency dependences of the cyclotron linewidth. These can be ascribed to the effect of inhomogeneous broadening due to nonparabolicity of the electron spectrum, which is renormalized as a result of interaction with acoustic phonons.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1768
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	Author	Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G.
	Title	Scattering of electrons by charged impurities in Ge under cyclotron resonance conditions			Type	Journal Article
	Year	1976	Publication	Presumably: Sov. Phys. Semicond. \| Физика и техника полупроводников	Abbreviated Journal	Presumably: Sov. Phys. Semicond. \| Физика и техника полупроводников
	Volume	10	Issue		Pages	1379-1383
	Keywords	Ge, cyclotron resonance, charged impurities,
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1772
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	Author	Bondarenko, O. I.; Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G.
	Title	Measurement of the width of the cyclotron resonance line of n-type Ge in quantizing magnetic fields			Type	Journal Article
	Year	1972	Publication	Presumably: Sov. Phys. Semicond. \| Физика и техника полупроводников	Abbreviated Journal	Presumably: Sov. Phys. Semicond. \| Физика и техника полупроводников
	Volume	6	Issue		Pages	362-363
	Keywords	Ge, cyclotron resonance, quantizing magnetic fields
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1774
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	Author	Банная, В. Ф.; Веселова, Л. И.; Гершензон, Е. М.
	Title	Об одном способе определения концентрации глубоких примесей в германии			Type	Journal Article
	Year	1983	Publication	Физика и техника полупроводников	Abbreviated Journal	Физика и техника полупроводников
	Volume	17	Issue	10	Pages	1896-1898
	Keywords	Ge, deep impurities
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1762
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	Author	Gershenzon, E. M.; Goltsman, G. N.; Orlov, L.
	Title	Investigation of population and ionization of donor excited states in Ge			Type	Conference Article
	Year	1976	Publication	Physics of Semiconductors	Abbreviated Journal	Physics of Semiconductors
	Volume		Issue		Pages	631-634
	Keywords	Ge, donor excited states
	Abstract
	Address	Amsterdam
	Corporate Author				Thesis
	Publisher	North-Holland Publishing Co.	Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1732
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.
	Title	Transitions of electrons between excited states of donors in germanium			Type	Journal Article
	Year	1971	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
	Volume	14	Issue	2	Pages	63-65
	Keywords	Ge, donors, excited states
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1740
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	Author	Gershenzon, E. M.; Goltsman, G. N.
	Title	Zeeman effect in excited-states of donors in germanium			Type	Journal Article
	Year	1972	Publication	Sov. Phys. Semicond.	Abbreviated Journal	Sov. Phys. Semicond.
	Volume	6	Issue	3	Pages	509
	Keywords	Ge, donors, Zeeman effect
	Abstract
	Address
	Corporate Author				Thesis
	Publisher	Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa	Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1737
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G.
	Title	Kinetics of electron and hole binding into excitons in germanium			Type	Journal Article
	Year	1983	Publication	Sov. Phys. JETP	Abbreviated Journal	Sov. Phys. JETP
	Volume	57	Issue	2	Pages	369-376
	Keywords	Ge, electron and hole binding
	Abstract	The kinetics of binding of free carriers'into excitons under stationary and nonstationary conditions is studied by investigating the submillimeter photoconductivity of Ge in a wide range of temperatures and of excitation levels. It is shown that the absolute values and the temperature dependence of the binding cross section (o- T-'.' ) can be satisfactorily described by the cascade recombination theory. The value of o and its temperature dependence differ significantly from the cross sections, measured in the same manner, for capture by attracting small impurities. Under nonstationary conditions, just as in the case of recombination with shallow impurities, a signifi- cant role is played by the sticking of the carriers in highly excited states.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1711
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.
	Title	Observation of the free-exciton spectrum at submillimeter wavelengths			Type	Journal Article
	Year	1972	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
	Volume	16	Issue	4	Pages	161-162
	Keywords	Ge, energy spectrum, free excitons
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1736
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	Author	Gershenzon, E.; Goltsman, G.; Orlov, L.; Ptitsina, N.
	Title	Population of excited-states of small admixtures in germanium			Type	Conference Article
	Year	1978	Publication	Izv. Akad. Nauk SSSR, Seriya Fizicheskaya	Abbreviated Journal	Izv. Akad. Nauk SSSR, Seriya Fizicheskaya
	Volume	42	Issue	6	Pages	1154-1159
	Keywords	Ge, excited states, admixtures
	Abstract
	Address
	Corporate Author				Thesis
	Publisher	Mezhdunarodnaya Kniga 39 Dimitrova Ul., 113095 Moscow, Russia	Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1723
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	Author	Gershenzon, E. M.; Goltsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G.
	Title	Kinetics of submillimeter impurity and exciton photoconduction in Ge			Type	Journal Article
	Year	1982	Publication	Optics and Spectroscopy	Abbreviated Journal	Optics and Spectroscopy
	Volume	52	Issue	4	Pages	454-455
	Keywords	Ge, exciton photoconduction
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1715
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G.
	Title	Cross section for binding of free carriers into excitons in germanium			Type	Journal Article
	Year	1981	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
	Volume	33	Issue	11	Pages	574
	Keywords	Ge, excitons, photoconductivity
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1718
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	Author	Гольцман, Г. Н.; Птицина, Н. Г.; Ригер, Е. Р.
	Title	Оже-рекомбинация свободных носителей на мелких донорах в германии			Type	Journal Article
	Year	1984	Publication	Физика и техника полупроводников	Abbreviated Journal	Физика и техника полупроводников
	Volume	18	Issue	9	Pages	1684-1686
	Keywords	Ge, free carrier recombination
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1710
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.
	Title	Investigation of free excitons in Ge and their condensation at submillimeter wavelengths			Type	Journal Article
	Year	1976	Publication	Sov. Phys. JETP	Abbreviated Journal	Sov. Phys. JETP
	Volume	43	Issue	1	Pages	116-122
	Keywords	Ge, free excitons
	Abstract	Results are presented of an investigation of free excitons in Ge in the submillimeter wavelength range for low as well as for high excitation levels when interaction between the excitons becomes important. The free-exciton energy spectrum is discussed. It is shown that the drop radii and their concentrations can be determined by measuring the temperature dependence of the free-exciton concentration. A section of the phase diagram is obtained in the 0.5-2.8 K temperature range for the free excitons+condensate system.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1731
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	Author	Gershenzon, E. M.; Gol'tsman, G.; Ptitsina, N. G.
	Title	Energy spectrum of free excitons in germanium			Type	Journal Article
	Year	1973	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
	Volume	18	Issue	3	Pages	93
	Keywords	Ge, free excitons, energy spectrum
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1734
Permanent link to this record



	Author	Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G.; Chulkova, G. M.
	Title	Capture of free holes by charged acceptors in uniaxially deformed Ge			Type	Journal Article
	Year	1988	Publication	Fizika i Tekhnika Poluprovodnikov	Abbreviated Journal	Fizika i Tekhnika Poluprovodnikov
	Volume	22	Issue	3	Pages	540-543
	Keywords	Ge, free holes, capture
	Abstract	Цель настоящей работы — исследование кинетики примесной фотопроводимости p-Ge при сильном одноосном сжатии в широком диапазоне изменения интенсивности примесного подсвета, создающего свободные дырки, и определение сечения каскадного захвата дырок на мелкие заряженные акцепторы в условиях преобладания электрон-фононного механизма потерь энергии.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes	Захват свободных дырок заряженными акцепторами в одноосно деформированном Ge			Approved	no
	Call Number				Serial	1698
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.
	Title	Energy spectrum of the donors in GaAs and Ge and its reaction to a magnetic field			Type	Journal Article
	Year	1977	Publication	Sov. Phys. JETP	Abbreviated Journal	Sov. Phys. JETP
	Volume	45	Issue	3	Pages	555-565
	Keywords	Ge, GaAs, magnetic field, donors, energy spectrum
	Abstract	The spectrum of the submillimeter photoconductivity of n-GaAs and n-Ge in a magnetic field up to 60 kOe at helium temperatures was investigated. A large number of lines due to transitions between excited states of the donors have been investigated, and the measurement results were used to determine a number of levels of the energy spectrum in a wide range of magnetic fields. For GaAs, these data are compared with calculations of the energy spectrum of the hydrogen atom in magnetic fields up to -2X lo9 Oe. For the donors in Ge, the energy spectrum is investigated at different orientations of the magnetic field relative to the crystallographic axes (H 11 [loo], [I 1 I], [110]), and these results are also compared with the corresponding calculations.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1728
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Emtsev, V. V.; Mashovets, T. V.; Ptitsyna, N. G.; Ryvkin, S. M.
	Title	Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium			Type	Journal Article
	Year	1971	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
	Volume	14	Issue	6	Pages	241
	Keywords	Ge, gamma irradiation, defects, impurities
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1742
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	Author	Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G.
	Title	Absorption spectra in electron transitions between excited states of impurities in germanium			Type	Journal Article
	Year	1975	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
	Volume	22	Issue	4	Pages	95-97
	Keywords	Ge, impurities, excited states, absorption spectra
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1773
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsyna, N. G.
	Title	Capture of photoexcited carriers by shallow impurity centers in germanium			Type	Journal Article
	Year	1979	Publication	Sov. Phys. JETP	Abbreviated Journal	Sov. Phys. JETP
	Volume	50	Issue	4	Pages	728-734
	Keywords	Ge, photoexcited carriers, shallow impurity centers
	Abstract	Measurements were made of the lifetimes rf of free carriers and the relaxation time 7, of the submillimeter impurity photoconductivity when carriers are captured by attracting shallow donors and acceptom in Ge. It is nod that in samples with capture-center concentration N,Z 10"cm-' the relaxation time 7, greatly exceeds rf in the temperature range 4.2-12 K. The measured values of 7,- are compared with the calculation of cascade recombination by the classical model. To evaluate the data on T,, the distinguishing features of this model are considered for the nonstationary case. The substantial difference betweea the values of rf and T, is attributed to re-emission of the carriers from the excited states of the shallow impurities.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1720
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.
	Title	Population and lifetime of excited states of shallow impurities in Ge			Type	Journal Article
	Year	1979	Publication	Sov. Phys. JETP	Abbreviated Journal	Sov. Phys. JETP
	Volume	49	Issue	2	Pages	355-362
	Keywords	Ge, photothermal ionization, shallow impurities
	Abstract	An investigation was made of the dependences of the intensities of photothermal ionization lines of excited states of shallow impurities in Ge on the intensity of impurity-absorbed background radiation and on temperature. The results obtained were used to find the density and lifetime of carriers of lower excited states of the impurity centers. The lifetimes of the excited states of donors in Ge were 10-~-10-" sec and the lifetime of the lower excited state of acceptors was -lo-' sec. In the presence of background radiation the population of the excited states was very different from the equilibrium value and, in particular, a population inversion of the 2pk, state relative to the 3p0 and 3s states was observed.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1719
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	Author	Gershenzon, E.M.; Gol'tsman, G.N.; Ptitsyna, N. G.
	Title	Carrier lifetime in excited states of shallow impurities in germanium			Type	Journal Article
	Year	1977	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
	Volume	25	Issue	12	Pages	539-543
	Keywords	Ge, shallow impurities, excited states
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1726
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P.
	Title	Binding energy of a carrier with a neutral impurity atom in germanium and in silicon			Type	Journal Article
	Year	1971	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
	Volume	14	Issue	5	Pages	185-186
	Keywords	Ge, Si, neutral impurity atom, binding energy
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1739
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Riger, E. R.
	Title	Effect of electron-electron collisions on the trapping of free carriers by shallow impurity centers in germanium			Type	Journal Article
	Year	1986	Publication	Sov. Phys. JETP	Abbreviated Journal	Sov. Phys. JETP
	Volume	64	Issue	4	Pages	889-897
	Keywords	Ge, trapping of free carriers
	Abstract	Cascade Auger recombination of free carriers on shallow impurities in Ge is investigated under quasi-equilibrium conditions (T= 2-12 K) and in impurity breakdown. The Auger capture cross sections are found to be a,= 5. 10-l9 T-'n cm2 for donors and uip= 7- T-5p cm2 for acceptors. It is shown that in an isotropic semiconductor (p-Ge) ui is well described by the cascade-capture theory that takes into account only electron-electron collisions. In an anisotropic semiconductor ui is considerably larger (n-Ge, strongly uniaxially compressedp-Ge). Under impurity breakdown conditions the electron-electron collisions determine the lifetimes of the free carriers only in samples with appreciable density of the compensating impurity (Nk loi3 cmP3).
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1707
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	Author	Gol'tsman, G. N.; Gusinskii, E. N.; Malyavkin, A. V.; Ptitsina, N. G.; Selevko, A. G.; Edel'shtein, V. M.
	Title	The excitonic Zeeman effect in uniaxially-strained germanium			Type	Journal Article
	Year	1987	Publication	Sov. Phys. JETP	Abbreviated Journal	Sov. Phys. JETP
	Volume	65	Issue	6	Pages	1233-1241
	Keywords	Ge, Zeeman effect
	Abstract	We have carried out a high-resolution spectroscopic study of the absorption of submillimeter radiation by free excitons in germanium compressed along the [ 1 11 ] axis in a magnetic field parallel to the compression axis. In particular, we studied the splitting of the 1s- 2p transition in fields up to 6 kOe at T = 1.6 K, and observed a complex pattern in the Zeeman splitting which we believe is related to the effect of thermal motion of the excitons in a magnetic field on their internal structure (the magneto-Stark effect). The calculated submillimeter spectrum of excitons agrees with the experimental data. We predict that in a magnetic field the energy of the 2p, term is a minimum at a finite value of the exciton momentum perpendicular to the field-that is, the energy minimum forms a ring in momentum space. It follows that the density of states for this term must be a nonmonotonic function of the energy. A theory is developed of analogous phenomena in positronium.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1705
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	Author	Bandurin, D. A.; Gayduchenko, I.; Cao, Y.; Moskotin, M.; Principi, A.; Grigorieva, I. V.; Goltsman, G.; Fedorov, G.; Svintsov, D.
	Title	Dual origin of room temperature sub-terahertz photoresponse in graphene field effect transistors			Type	Journal Article
	Year	2018	Publication	Appl. Phys. Lett.	Abbreviated Journal	Appl. Phys. Lett.
	Volume	112	Issue	14	Pages	141101 (1 to 5)
	Keywords	graphene field effect transistors, FET
	Abstract	Graphene is considered as a promising platform for detectors of high-frequency radiation up to the terahertz (THz) range due to its superior electron mobility. Previously, it has been shown that graphene field effect transistors (FETs) exhibit room temperature broadband photoresponse to incoming THz radiation, thanks to the thermoelectric and/or plasma wave rectification. Both effects exhibit similar functional dependences on the gate voltage, and therefore, it was difficult to disentangle these contributions in previous studies. In this letter, we report on combined experimental and theoretical studies of sub-THz response in graphene field-effect transistors analyzed at different temperatures. This temperature-dependent study allowed us to reveal the role of the photo-thermoelectric effect, p-n junction rectification, and plasmonic rectification in the sub-THz photoresponse of graphene FETs. D.A.B. acknowledges the Leverhulme Trust for financial support. The work of D.S. was supported by Grant No. 16-19-10557 of the Russian Scientific Foundation (theoretical model). G.F., I.G., M.M., and G.G. acknowledge the Russian Science Foundation [Grant No. 14-19-01308 (MIET, cryostat upgrade) and Grant No. 17-72-30036, (MSPU, photoresponse measurements), the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007 (device fabrication) and Task No. 3.7328.2017/LS (NEP analyses)] and the Russian Foundation for Basic Research [Grant No. 15-02-07841 (device design)]. The authors are grateful to Professor M. S. Shur for helpful discussions.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0003-6951	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1309
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	Author	Fedorov, G. E.; Gaiduchenko, I. A.; Golikov, A. D.; Rybin, M. G.; Obraztsova, E. D.; Voronov, B. M.; Coquillat, D.; Diakonova, N.; Knap, W.; Goltsman, G. N.; Samartsev, V. V.; Vinogradov, E. A.; Naumov, A. V.; Karimullin, K. R.
	Title	Response of graphene based gated nanodevices exposed to THz radiation			Type	Conference Article
	Year	2015	Publication	EPJ Web of Conferences	Abbreviated Journal	EPJ Web of Conferences
	Volume	103	Issue		Pages	10003 (1 to 2)
	Keywords	graphene field-effect transistor, FET
	Abstract	In this work we report on the response of asymmetric graphene based devices to subterahertz and terahertz radiation. Our devices are made in a configuration of a field-effect transistor with conduction channel between the source and drain electrodes formed with a CVD-grown graphene. The radiation is coupled through a spiral antenna to source and top gate electrodes. Room temperature responsivity of our devices is close to the values that are attractive for commercial applications. Further optimization of the device configuration may result in appearance of novel terahertz radiation detectors.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2100-014X	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1350
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	Author	Gayduchenko, I. A.; Moskotin, M. V.; Matyushkin, Y. E.; Rybin, M. G.; Obraztsova, E. D.; Ryzhii, V. I.; Goltsman, G. N.; Fedorov, G. E.
	Title	The detection of sub-terahertz radiation using graphene-layer and graphene-nanoribbon FETs with asymmetric contacts			Type	Conference Article
	Year	2018	Publication	Materials Today: Proc.	Abbreviated Journal	Materials Today: Proc.
	Volume	5	Issue	13	Pages	27301-27306
	Keywords	graphene nanoribbons, graphene-nanoribbon, GNR FET, field effect transistor
	Abstract	We report on the detection of sub-terahertz radiation using single layer graphene and graphene-nanoribbon FETs with asymmetric contacts (one is the Schottky contact and one – the Ohmic contact). We found that cutting graphene into ribbons a hundred nanometers wide leads to a decrease of the response to sub-THz radiation. We show that suppression of the response in the graphene nanoribbons devices can be explained by unusual properties of the Schottky barrier on graphene-vanadium interface.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2214-7853	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1316
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	Author	Matyushkin, Y.; Danilov, S.; Moskotin, M.; Belosevich, V.; Kaurova, N.; Rybin, M.; Obraztsova, E. D.; Fedorov, G.; Gorbenko, I.; Kachorovskii, V.; Ganichev, S.
	Title	Helicity-sensitive plasmonic terahertz interferometer			Type	Journal Article
	Year	2020	Publication	Nano Lett.	Abbreviated Journal	Nano Lett.
	Volume	20	Issue	10	Pages	7296-7303
	Keywords	graphene, plasmonic interferometer, radiation helicity, terahertz radiation
	Abstract	Plasmonic interferometry is a rapidly growing area of research with a huge potential for applications in the terahertz frequency range. In this Letter, we explore a plasmonic interferometer based on graphene field effect transistor connected to specially designed antennas. As a key result, we observe helicity- and phase-sensitive conversion of circularly polarized radiation into dc photovoltage caused by the plasmon-interference mechanism: two plasma waves, excited at the source and drain part of the transistor, interfere inside the channel. The helicity-sensitive phase shift between these waves is achieved by using an asymmetric antenna configuration. The dc signal changes sign with inversion of the helicity. A suggested plasmonic interferometer is capable of measuring the phase difference between two arbitrary phase-shifted optical signals. The observed effect opens a wide avenue for phase-sensitive probing of plasma wave excitations in two-dimensional materials.
	Address	CENTERA Laboratories, Institute of High Pressure Physics, PAS, 01-142 Warsaw, Poland
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1530-6984	ISBN		Medium
	Area		Expedition		Conference
	Notes	PMID:32903004			Approved	no
	Call Number				Serial	1781
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	Author	Fedorov, G.; Gayduchenko, I.; Titova, N.; Moskotin, M.; Obraztsova, E.; Rybin, M.; Goltsman, G.
	Title	Graphene-based lateral Schottky diodes for detecting terahertz radiation			Type	Conference Article
	Year	2018	Publication	Proc. Optical Sensing and Detection V	Abbreviated Journal	Proc. Optical Sensing and Detection V
	Volume	10680	Issue		Pages	30-39
	Keywords	graphene, terahertz radiation, detectors, Schottky diodes, carbon nanotubes, plasma waves
	Abstract	Demand for efficient terahertz radiation detectors resulted in intensive study of the carbon nanostructures as possible solution for that problem. In this work we investigate the response to sub-terahertz radiation of graphene field effect transistors of two configurations. The devices of the first type are based on single layer CVD graphene with asymmetric source and drain (vanadium and gold) contacts and operate as lateral Schottky diodes (LSD). The devices of the second type are made in so-called Dyakonov-Shur configuration in which the radiation is coupled through a spiral antenna to source and top electrodes. We show that at 300 K the LSD detector exhibit the room-temperature responsivity from R = 15 V/W at f= 129 GHz to R = 3 V/W at f = 450 GHz. The DS detector responsivity is markedly lower (2 V/W) and practically frequency independent in the investigated range. We find that at low temperatures (77K) the graphene lateral Schottky diodes responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. The obtained data allows for determination of the most promising directions of development of the technology of nanocarbon structures for the detection of THz radiation.
	Address
	Corporate Author				Thesis
	Publisher	Spie	Place of Publication		Editor	Berghmans, F.; Mignani, A.G.
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	10.1117/12.2307020			Serial	1306
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	Author	Prokhodtsov, A.; Golikov, A.; An, P.; Kovalyuk, V.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A.
	Title	Effect of silicon oxide coating on a silicon nitride focusing grating coupler efficiency			Type	Conference Article
	Year	2019	Publication	EPJ Web Conf.	Abbreviated Journal	EPJ Web Conf.
	Volume	220	Issue		Pages	02009
	Keywords	grating coupler, SiO2
	Abstract	The dependence of the efficiency of the focusing grating couplers on the period and filling factor before and after deposition of the upper silicon oxide layer was experimentally studied. The obtained data are of practical importance for tunable integrated-optical devices based on silicon nitride platform.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2100-014X	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1188
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	Author	Elmanov, I.; Sardi, F.; Xia, K.; Kornher, T.; Kovalyuk, V.; Prokhodtsov, A.; An, P.; Kuzin, A.; Elmanova, A.; Goltsman, G.; Kolesov, R.
	Title	Development of focusing grating couplers for lithium niobate on insulator platform			Type	Conference Article
	Year	2020	Publication	J. Phys.: Conf. Ser.	Abbreviated Journal	J. Phys.: Conf. Ser.
	Volume	1695	Issue		Pages	012127
	Keywords	grating couplers, lithium niobat
	Abstract	In this paper, we fabricate and experimentally study focusing grating couplers for lithium niobate on an insulator photonic platform. The transmittance of a waveguide equipped with in- and out-couplers with respect to the grating period is measured with and without silicon dioxide cladding applied. Our results show the influence of silicon dioxide cladding on the efficiency and the central wavelength of grating couplers and can be used to improve grating coupling efficiency. Our study is supported by numerical simulations.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1742-6588	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1180
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	Author	Банная, В. Ф.; Веселова, Л. И.; Гершензон, Е. М.; Гусинский, Э. Н.; Литвак-Горская, Л. Б.
	Title	Оценка точности метода определения раздельной концентрации примесей из измерений постоянной Холла			Type	Journal Article
	Year	1990	Publication	Физика и техника полупроводников	Abbreviated Journal	Физика и техника полупроводников
	Volume	24	Issue	12	Pages	2145-2150
	Keywords	Hall constant, concentration of impurities, p-Si
	Abstract	На примере p-Si⟨B,\,Ga⟩ с различной степенью компенсации проведена сравнительная оценка точности определения раздельной концентрации примесей по температурной зависимости концентрации дырок p(T) в случае одной и двух легирующих примесей с энергиями ионизации, различающимися менее чем в 2 раза. Исследована функция среднеквадратичного отклонения в пространстве параметров D(Nк, N2) (Nк, N1 и N2 — концентрации компенсирующих примесей бора и галлия соответственно, N2≫N1) в предположении, что N2, энергии B и Ga известны. Показано, что в случае двух легирующих примесей D(Nк, N1) в окрестностях минимума имеет «овражный» рельеф и при некоторых соотношениях между Nк и N1 разброс искомых величин превышает порядок, причем увеличение точности измерений p(T) существенного улучшения в вычислении параметров не дает. При одной легирующей примеси точность вычисления параметров высокая.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1754
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Elantiev, A. I.; Karasik, B. S.; Potoskuev, S. E.
	Title	Intense electromagnetic radiation heating of electrons of a superconductor in the resistive state			Type	Journal Article
	Year	1988	Publication	Sov. J. Low Temp. Phys.	Abbreviated Journal	Sov. J. Low Temp. Phys.
	Volume	14	Issue	7	Pages	414-420
	Keywords	HEB
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes	Duplicated as 1697			Approved	no
	Call Number				Serial	236
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	Author	Gershenzon, E. M.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V.
	Title	Limiting characteristic of fast superconducting bolometers			Type	Journal Article
	Year	1989	Publication	Sov. Phys.-Tech. Phys.	Abbreviated Journal	Sov. Phys.-Tech. Phys.
	Volume	34	Issue		Pages	195-199
	Keywords	HEB
	Abstract	Теоретически и экспериментально исследовано физическое ограничение быстродействия сверхпроводящего болометра. Показано, что минимальная постоянная времени реализуется в условиях электронного разогрева и определяется процессом неупругого электрон-фонон- ного взаимодействия. Сформулированы требования кконструкции «электронного болометра» для достижения предельной чувствительности. Проведено сравнение характеристик электронного болометра и обычных болометров различных типов.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes	О предельных характеристиках быстродействующих серхпроводниковых болометров			Approved	no
	Call Number				Serial	237
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	Author	Гершензон, Е. М.; Гершензон, М. Е.; Гольцман, Г. Н.; Люлькин, А. М.; Семенов, А. Д.; Сергеев, А. В.
	Title	О предельных характеристиках быстродействующих серхпроводниковых болометров			Type	Journal Article
	Year	1989	Publication	Журнал технической физики	Abbreviated Journal	Журнал технической физики
	Volume	59	Issue	2	Pages	111-120
	Keywords	HEB
	Abstract	Теоретически и экспериментально исследовано физическое ограничение быстродействия сверхпроводящего болометра. Показано, что минимальная постоянная времени реализуется в условиях электронного разогрева и определяется процессом неупругого электрон-фонон- ного взаимодействия. Сформулированы требования кконструкции «электронного болометра» для достижения предельной чувствительности. Проведено сравнение характеристик электронного болометра и обычных болометров различных типов.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes	Duplicated as 237			Approved	no
	Call Number				Serial	238
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	Author	Ожегов, Роман Викторович
	Title	Флуктуационная чувствительность и стабильность приемников с СИС и HEB смесителями для терагерцового тепловидения			Type	Journal Article
	Year	2011	Publication	Радиофизика	Abbreviated Journal
	Volume		Issue		Pages	135
	Keywords	HEB
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ gujma @			Serial	731
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	Author	Гершензон, Е. М.; Гольцман, Г. Н.; Елантьев, А. И.; Карасик, Б. С.; Потоскуев, С. Э.
	Title	Разогрев электронов в резистивном состоянии сверхпроводника электромагнитным излучением значительной интенсивности			Type	Journal Article
	Year	1988	Publication	Физика низких температур	Abbreviated Journal	Физика низких температур
	Volume	14	Issue	7	Pages	753-763
	Keywords	HEB
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes	Duplicated as 1697			Approved	no
	Call Number				Serial	883
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	Author	Ozhegov, R. V.; Smirnov, A. V.; Vakhtomin, Yu. B.; Smirnov, K. V.; Divochiy, A. V.; Goltsman, G. N.
	Title	Ultrafast superconducting bolometer receivers for terahertz applications			Type	Abstract
	Year	2009	Publication	Proc. PIERS	Abbreviated Journal	Proc. PIERS
	Volume		Issue		Pages	867
	Keywords	HEB
	Abstract	The research by the group of Moscow State Pedagogical University into the hot-electron phenomena in thin superconducting films has led to the development of new types of detectors and their use both in fundamental and applied studies. In this paper, we present the results of testing the terahertz HEB receiver systems based on ultrathin (∼ 4 nm) NbN and MoRe detectors with a response time of 50 ps and 1 ns, respectively. We have developed three types of devices which differ in the way a terahertz signal is coupled to the detector and cover the following ranges: 0.3–3 THz, 0.1–30 THz and 25–70 THz. In the case of the receiving system optimized for 0.3–3 THz, the sensitive element (a strip of asuperconductor with planar dimensions of 0.2μm (length) by 1.7μm (width)) was integrated witha planar broadband log-spiral antenna. For additional focusing ofthe incident radiation a silicon hyperhemispherical lens was used. For the 0.1–30 THz receivingsystem, the sensitive element was patterned as parallel strips(2μm wide each) filling an area of 500×500μm2with a filling factor of 0.5. In the receivingsystem of this type we used direct coupling of the incident radiation to the sensitive element. Inthe 25–70 THz range (detector type 2/2a in Table 1) we used a square-shaped superconductingdetector with planar dimensions of 10×10μm2. Incident radiation was coupled to the detectorwith the use of a germanium hyperhemispherical lens.The response time of the above receiving systems is determined by the cooling rate of the hotelectrons in the film. That depends on the electron-phonon interaction time, which is less forultrathin NbN than in MoRe.
	Address	Moscow, Russia
	Corporate Author				Thesis
	Publisher	The Electromagnetics Academy	Place of Publication	777 Concord Avenue, Suite 207 Cambridge, MA 02138	Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1559-9450	ISBN	978-1-934142-09-7	Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ sasha @ ozhegovultrafast			Serial	1022
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	Author	Zhang, W.; Miao, W.; Zhong, J. Q.; Shi, S. C.; Hayton, D. J.; Vercruyssen, N.; Gao, J. R.; Goltsman, G. N.
	Title	Temperature dependence of superconducting hot electron bolometers			Type	Conference Article
	Year	2013	Publication	Not published results: 24^th international symposium on space terahertz technology	Abbreviated Journal
	Volume		Issue		Pages
	Keywords	HEB
	Abstract
	Address	Groningen,The Netherlands
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1067
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	Author	Shurakov, A.; Lobanov, Y.; Goltsman, G.
	Title	Superconducting hot-electron bolometer: from the discovery of hot-electron phenomena to practical applications			Type	Journal Article
	Year	2015	Publication	Supercond. Sci. Technol.	Abbreviated Journal	Supercond. Sci. Technol.
	Volume	29	Issue	2	Pages	023001
	Keywords	HEB
	Abstract	The discovery of hot-electron phenomena in a thin superconducting film in the last century was followed by numerous experimental studies of its appearance in different materials aiming for a better understanding of the phenomena and consequent implementation of terahertz detection systems for practical applications. In contrast to the competitors such as superconductor-insulator-superconductor tunnel junctions and Schottky diodes, the hot electron bolometer (HEB) did not demonstrate any frequency limitation of the detection mechanism. The latter, in conjunction with a decent performance, rapidly made the HEB mixer the most attractive candidate for heterodyne observations at frequencies above 1 THz. The successful operation of practical instruments (the Heinrich Hertz Telescope, the Receiver Lab Telescope, APEX, SOFIA, Hershel) ensures the importance of the HEB technology despite the lack of rigorous theoretical routine for predicting the performance. In this review, we provide a summary of experimental and theoretical studies devoted to understanding the HEB physics, and an overview of various fabrication routes and materials.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0953-2048	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1156
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	Author	Gol'tsman, G. N.; Elant'iev, A. I.; Karasik, B. S.; Gershenzon, E. M.
	Title	Antenna – coupled superconducting electron-heating bolometer			Type	Conference Article
	Year	1993	Publication	Proc. 4^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 4^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	623-628
	Keywords	HEB
	Abstract	We propose a novel antenna-coupled superconducting bolometer based on electron-heating in the resistive state. A short narrow ultrathin super- conducting film strip (sized approximately 4x1x0.01 pm 3 ), which is in good thermal contact with the thermostat, serves as a resistive load for infrared or submillimeter current. In contrast to conventional isothermal super- conducting bolometers electron-heating ones can have a higher sensitivity which grows when filni. thickness is reduced. Response time of electron- heating bolometer does not depend on heat transfer from the film to the enviroment. To calculate the sensitivity (NEP), we have used experimental data on wideband Al, Nb and NbN bolometers which have the same un- derlying physical mechanism. The bolom.eters have been made in the form of a structure composed of a number of long narrow strips. The values of for Al, NEP have been found to be 1.5 . 113 -16 1 140 -15 ) and 2 . 10 – 14werT,-1/2 – Nb and NbN respectively. In the paper, the prospects are also discussed of improving the picosecond YBaCuO detector, developed recently. NEP value of the detector, if combined with a microantenna, can reach the order of 10- •ilz-v2.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1657
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	Author	Gershenzon, E. M.; Gershenson, M. E.; Goltsman, G. N.; Lyulkin, A. M.; Semenov, A. D.; Sergeev, A. V.
	Title	Limiting characteristics of fast-response superconducting bolometers			Type	Journal Article
	Year	1989	Publication	Zhurnal Tekhnicheskoi Fiziki	Abbreviated Journal	Zhurnal Tekhnicheskoi Fiziki
	Volume	59	Issue	2	Pages	11-120
	Keywords	HEB
	Abstract	Теоретически и экспериментально исследовано физическое ограничение быстродействия сверхпроводящего болометра. Показано, что минимальная постоянная времени реализуется в условиях электронного разогрева и определяется процессом неупругого электрон-фонон-ного взаимодействия. Сформулированы требования к конструкции «электронного болометра» для достижения предельной чувствительности. Проведено сравнение характеристик электронного болометра и обычных болометров различных типов.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1696
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	Author	Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V.
	Title	Nonselective effect of electromagnetic radiation on a superconducting film in the resistive state			Type	Journal Article
	Year	1982	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
	Volume	36	Issue	7	Pages	296-299
	Keywords	HEB
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes	Неселективное воздействие электромагнитного излучения на сверхпроводящую пленку в резистивном состоянии			Approved	no
	Call Number				Serial	1717
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	Author	Kitaeva, G. K.; Kornienko, V. V.; Kuznetsov, K. A.; Pentin, I. V.; Smirnov, K. V.; Vakhtomin, Y. B.
	Title	Direct detection of the idler THz radiation generated by spontaneous parametric down-conversion			Type	Journal Article
	Year	2019	Publication	Opt. Lett.	Abbreviated Journal	Opt. Lett.
	Volume	44	Issue	5	Pages	1198-1201
	Keywords	HEB applications
	Abstract	We study parametric down-conversion (PDC) of optical laser radiation in the strongly frequency non-degenerate regime which is promising for the generation of quantum-correlated pairs of extremely different spectral ranges, the optical and the terahertz (THz) ones. The possibility to detect tenuous THz-frequency photon fluxes generated under low-gain spontaneous PDC is demonstrated using a hot electron bolometer. Then experimental dependences of the THz radiation power on the detection angle and on the pump intensity are analyzed.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0146-9592	ISBN		Medium
	Area		Expedition		Conference
	Notes	PMID:30821747			Approved	no
	Call Number				Serial	1801
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	Author	Angeluts, A. A.; Bezotosnyi, V. V.; Cheshev, E. A.; Goltsman, G. N.; Finkel, M. I.; Seliverstov, S. V.; Evdokimov, M. N.; Gorbunkov, M. V.; Kitaeva, G. Kh.; Koromyslov, A. L.; Kostryukov, P. V.; Krivonos, M. S.; Lobanov, Yu. V.; Shkurinov, A. P.; Sarkisov, S. Yu.; Tunkin, V. G.
	Title	Compact 1.64 THz source based on a dual-wavelength diode end-pumped Nd:YLF laser with a nearly semiconfocal cavity			Type	Journal Article
	Year	2014	Publication	Laser Phys. Lett.	Abbreviated Journal
	Volume	11	Issue	1	Pages	015004 (1 to 4)
	Keywords	HEB applications, HEB detector applications, short THz pulses detection
	Abstract	We describe a compact dual-wavelength (1.047 and 1.053 μm) diode end-pumped Q-switched Nd:YLE laser source which has a number of applications in demand. In order to achieve its dual-wavelength operation it is suggested for the first time to use essentially nonmonotonous dependences of the threshold pump powers at these wavelengths on the cavity length in the region of the cavity semiconfocal configuration under a radius of the pump beam smaller than the radius of the zero Gaussian mode. Here we demonstrate one of the most interesting applications for this laser: difference frequency generation in a GaSe crystal at a frequency of 1.64 THz. A superconducting hot-electron bolometer is used to detect the THz power generated and to measure its pulse characteristics.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1076
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	Author	Shurakov, Alexander; Maslennikov, Sergey; Tong, Cheuk-yu E.; Gol’tsman, Gregory
	Title	Performance of an HEB direct detector utilizing a microwave reflection readout scheme			Type	Conference Article
	Year	2015	Publication	Proc. 26^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 26^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	36
	Keywords	HEB detector
	Abstract	We report the results of our study on the performance of a hot electron bolometric (HEB) direct detector, operated by a microwave pump. The HEB devices used in this work were made from NbN thin film deposited on high resistivity silicon with an in-situ fabrication process. The experimental setup employed is similar to the one described in [1]. The detector chips were glued to a silicon lens clamped to a copper holder mounted on the cold plate of a liquid helium cryostat. Thermal link between the lens and the holder was maintained by a thin indium shim. The HEBs were operated at a bath temperature of about 4.4 K. Conventional phonon pump, commonly realized by raising the bath temperature of the detector, was substituted by a microwave one. In this case, a CW microwave signal is injected to the device through a directional coupler connected directly to the detector holder. The power incident on the HEB device was typically 1-2 μW, and the pump frequency was in the range of 0.5-1.5 GHz. The signal sources were 2 black bodies held at temperatures of 295 K and 77 K. A chopper wheel placed in front of the cryostat window switched the input to the detector between the 2 sources. A modulation frequency of several kilohertz was chosen in order to reduce the effects of the HEB’s flicker noise. A cold mesh filter was used to define the input bandwidth of the detector. The reflected microwave signal from the HEB device was fed into a low noise amplifier, the output of which is connected to a room temperature Schottky microwave power detector. This Schottky detector, in conjunction with a lock-in amplifier, demodulated the input signal modulation from the copper wheel. As the input load was switched, the impedance of the HEB device at the microwave pump frequency also changed in response to the incident signal power variation. Therefore the reflected microwave power follows the incident signal modulation. The derived responsivity from this detection system nicely correlates with the HEB impedance. In order to provide a quantitative description of the impedance variation of the HEB device and the impact of a microwave pump, we have numerically solved the heat balance equations written for the NbN bridge and its surrounding thermal heat sink [2]. Our model also accounts for the impact of the operating frequency of the detector because of non-uniform absorption of low-frequency photons across the NbN bridge [3]. In our measurements we varied the signal source wavelength from 2 mm down to near infrared range, and hence we indirectly performed the impedance measurements at frequencies below, around and far beyond the superconducting gap. Preliminary results show good agreement between the experiment and theoretical prediction. Further measurements are still in progress. [1] A. Shurakov et al., “A Microwave Reflection Readout Scheme for Hot Electron Bolometric Direct Detector”, to appear in IEEE Trans. THz Sci. Tech., 2015. [2] S. Maslennikov, “RF heating efficiency of the terahertz superconducting hot-electron bolometer”, http://arxiv.org/pdf/1404.5276v5.pdf, 2014. [3] W. Miao et al., “Non-uniform absorption of terahertz radiation on superconducting hot electron bolometer microbridges”, Appl. Phys. Let., 104, 052605, 2014.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1158
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	Author	Seliverstov, S.; Maslennikov, S.; Ryabchun, S.; Finkel, M.; Klapwijk, T. M.; Kaurova, N.; Vachtomin, Yu.; Smirnov, K.; Voronov, B.; Goltsman, G.
	Title	Fast and sensitive terahertz direct detector based on superconducting antenna-coupled hot electron bolometer			Type	Journal Article
	Year	2015	Publication	IEEE Trans. Appl. Supercond.	Abbreviated Journal	IEEE Trans. Appl. Supercond.
	Volume	25	Issue	3	Pages	2300304
	Keywords	HEB detector responsivity, HEB model, numerical calculations, numerical model
	Abstract	We characterize superconducting antenna-coupled hot-electron bolometers for direct detection of terahertz radiation operating at a temperature of 9.0 K. The estimated value of responsivity obtained from lumped-element theory is strongly different from the measured one. A numerical calculation of the detector responsivity is developed, using the Euler method, applied to the system of heat balance equations written in recurrent form. This distributed element model takes into account the effect of nonuniform heating of the detector along its length and provides results that are in better agreement with the experiment. At a signal frequency of 2.5 THz, the measured value of the optical detector noise equivalent power is 2.0 × 10-13 W Â· Hz-0.5. The value of the bolometer time constant is 35 ps. The corresponding energy resolution is about 3 aJ. This detector has a sensitivity similar to that of the state-of-the-art sub-millimeter detectors operating at accessible cryogenic temperatures, but with a response time several orders of magnitude shorter.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	953
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	Author	Gershenson, M. E.; Gong, D.; Sato, T.; Karasik, B. S.; Sergeev, A. V.
	Title	Millisecond electron-phonon relaxation in ultrathin disordered metal films at millikelvin temperatures			Type	Journal Article
	Year	2001	Publication	Appl. Phys. Lett.	Abbreviated Journal
	Volume	79	Issue		Pages	2049-2051
	Keywords	HEB detector, FIR, far infrared
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ s @ heb_eph_interaction_Gershenzon			Serial	315
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	Author	Shurakov, A.; Tong, Cheuk-yu E.; Grimes, P.; Blundell, R.; Golt'sman, G.
	Title	A microwave reflection readout scheme for hot electron bolometric direct detector			Type	Journal Article
	Year	2015	Publication	IEEE Trans. THz Sci. Technol.	Abbreviated Journal	IEEE Trans. THz Sci. Technol.
	Volume	5	Issue		Pages	81-84
	Keywords	HEB detectors
	Abstract	In this paper, we propose and present data from a fast THz detector based on the repurpose of hot electron bolometer mixers (HEB) fabricated from superconducting NbN thinfilm. This detector is essentially a traditional NbN bolometer element that operates under the influence of a microwave pump. The in-jected microwave power serves the dual purpose of enhancing the detector sensitivity and reading out the impedance changes of the device in response to incidentTHz radiation. We have measured an optical Noise Equivalent Power of 4 pW/ Hz for our detector at a bath temperature of 4.2 K. The measurement frequency was 0.83 THz and the modulation frequency was 1.48 kHz. The readout scheme is versatile and facilitates both high-speed operation as well as multi-pixel applications.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ atomics90 @			Serial	950
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	Author	Loudkov, D.; Tong, C. Y. E.; Blundell, R.; Kaurova, N.; Grishina, E.; Voronov, B.; Gol'tsman, G.
	Title	An investigation of the performance of the superconducting HEB슠mixer as a function of its RF슠embedding impedance			Type	Journal Article
	Year	2005	Publication	IEEE Trans. Appl. Supercond.	Abbreviated Journal
	Volume	15	Issue	2	Pages	472-475
	Keywords	HEB mixer
	Abstract
	Address
	Corporate Author				Thesis
	Publisher	IEEE	Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	371
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	Author	Ryabchun, Sergey; Tong, Cheuk-Yu Edward; Paine, Scott; Lobanov, Yury; Blundell, Raymond; Goltsman, Gregory
	Title	Temperature resolution of an HEB receiver at 810 GHz			Type	Journal Article
	Year	2009	Publication	IEEE Trans. Appl. Supercond.	Abbreviated Journal	IEEE Trans. Appl. Supercond.
	Volume	19	Issue	3	Pages	293-296
	Keywords	HEB mixer
	Abstract	We present the results of direct measurements of the temperature resolution of an HEB receiver operating at 810 GHz, in both continuum and spectroscopic modes. In the continuum mode, the input of the receiver was switched between black bodies with different physical temperatures. With a system noise temperature of around 1100 K, the receiver was able to resolve loads which differed in temperature by about 1 K over an integration time of 5 seconds. This resolution is significantly worse than the value of 0.07 K given by the radiometer equation. In the spectroscopic mode, a gas cell filled with carbonyl sulphide (OCS) gas was used and the emission line at 813.3537060 GHz was measured using the receiver in conjunction with a digital spectrometer. From the observed spectra, we determined that the measurement uncertainty of the equivalent emission temperature was 2.8 K for an integration time of 0.25 seconds and a spectral resolution of 12 MHz, compared to a 1.4 K temperature resolution given by the radiometer equation. This relative improvement is due to the fact that at short integration times the contribution from 1/f noise and drift are less dominant. In both modes, the temperature resolution was improved by about 40% with the use of a feedback loop which adjusted the level of an injected microwave radiation to maintain a constant operating current of the HEB mixer. This stabilization scheme has proved to be very effective to keep the temperature resolution of the HEB receiver to close to the theoretical value given by the radiometer equation.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	636
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	Author	Масленникова, А. В.; Рябчун, С. А.; Финкель, М. И.; Каурова, Н. С.; Исупова, А. А.; Воронов, Б. М.; Гольцман, Г. Н.
	Title	Широкополосные смесители на горячих электронах на основе NbN наноструктур			Type	Journal Article
	Year	2011	Publication	Труды Московского физико-технического института	Abbreviated Journal	Труды МФТИ
	Volume	3	Issue	2	Pages	31-34
	Keywords	HEB mixer
	Abstract	Мы приводим данные исследования полосы преобразования смесителей на горячих электронах (hot-electron bolometer, НЕВ), изготовленных на основе тонких пленок NbN. Зависимость полосы преобразования от длины смесительного элемента находится в прекрасном согласии с результатами теоретической модели HEB-смесителя, в котором энергетическая релаксация электронов одновременно происходит по двум каналам: фононному и диффузионному.
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	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ gujma @			Serial	646
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	Author	Lobanov, Y. V.; Tong, Cheuk-Yu E.; Hedden, A. S.; Blundell, R.; Gol'tsman, G. N.
	Title	Microwave-assisted슠measurement슠of the슠frequency슠response슠of슠terahertz슠HEB슠mixers슠with a슠fourier슠transform슠spectrometer			Type	Conference Article
	Year	2010	Publication	21st International Symposium on Space Terahertz Technology	Abbreviated Journal	21st ISSTT
	Volume		Issue		Pages	420-423
	Keywords	HEB mixer
	Abstract	We describe a novel method of operation of the HEB direct detector for use with a Fourier Transform Spectrometer. Instead of elevating the bath temperature, we have measured the RF response of waveguide HEB mixers by applying microwave radiation to select appropriate bias conditions. In our experiment, a microwave signal is injected into the HEB mixer via its IF port. By choosing an appropriate injection level, the device can be operated close to the desired operating point. Furthermore, we have shown that both thermal biasing and microwave injection can reproduce the same spectral response of the HEB mixer. However, with the use of microwave injection, there is no need to wait for the mixer to reach thermal equilibrium, so characterisation can be done in less time. Also, the liquid helium consumption for our wet cryostat is also reduced. We have demonstrated that the signalto-noise ratio of the FTS measurements can be improved with microwave injection.
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	Series Volume		Series Issue		Edition
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	Notes				Approved	no
	Call Number	RPLAB @ gujma @			Serial	725
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	Author	Hajenius, M.; Barends, R.; Gao, J. R.; Klapwijk, T. M.; Baselmans, J. J. A.; Baryshev, A.; Voronov, B.; Gol'tsman, G.
	Title	Local resistivity and the current-voltage characteristics of hot electron bolometer mixers			Type	Journal Article
	Year	2005	Publication	IEEE Trans. Appl. Supercond.	Abbreviated Journal	IEEE Trans. Appl. Supercond.
	Volume	15	Issue	2	Pages	495-498
	Keywords	HEB mixer distributed model, HEB distributed model, distributed HEB model
	Abstract	Hot-electron bolometer devices, used successfully in low noise heterodyne mixing at frequencies up to 2.5 THz, have been analyzed. A distributed temperature numerical model of the NbN bridge, based on a local electron and a phonon temperature, is used to model pumped IV curves and understand the physical conditions during the mixing process. We argue that the mixing is predominantly due to the strongly temperature dependent local resistivity of the NbN. Experimentally we identify the origins of different transition temperatures in a real HEB device, suggesting the importance of the intrinsic resistive transition of the superconducting bridge in the modeling.
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	ISSN	1051-8223	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	980
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