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	Author	Korneeva, Yuliya; Florya, Irina; Vdovichev, Sergey; Moshkova, Mariya; Simonov, Nikita; Kaurova, Natalia; Korneev, Alexander; Goltsman, Gregory
	Title	Comparison of hot-spot formation in NbN and MoN thin superconducting films after photon absorption			Type	Conference Article
	Year	2017	Publication	IEEE Transactions on Applied Superconductivity	Abbreviated Journal	IEEE Transactions on Applied Superconductiv
	Volume	27	Issue	4	Pages	5
	Keywords	Thin film devices, Superconducitng photoncounting devices, Nanowire single-photon detectors
	Abstract	In superconducting single-photon detectors SSPD the efficiency of local suppression of superconductivity and hotspot formation is controlled by diffusivity and electron-phonon interaction time. Here we selected a material, 3.6-nm-thick MoNx film, which features diffusivity close to those of NbN traditionally used for SSPD fabrication, but with electron-phonon interaction time an order of magnitude larger. In MoNx detectors we study the dependence of detection efficiency on bias current, photon energy, and strip width and compare it with NbN SSPD. We observe non-linear current-energy dependence in MoNx SSPD and more pronounced plateaus in dependences of detection efficiency on bias current which we attribute to longer electronphonon interaction time.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ kovalyuk @			Serial	1114
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	Author	Elezov, M. S.; Ozhegov, R. V.; Goltsman, G. N.; Makarov, V.
	Title	Development of the experimental setup for investigation of latching of superconducting single-photon detector caused by blinding attack on the quantum key distribution system			Type	Conference Article
	Year	2017	Publication	EPJ Web of Conferences	Abbreviated Journal	EPJ Web of Conferences
	Volume	132	Issue	2	Pages	2
	Keywords
	Abstract	Recently bright-light control of the SSPD has been demonstrated. This attack employed a â€œbackdoorâ€ in the detector biasing scheme. Under bright-light illumination, SSPD becomes resistive and remains â€œlatchedâ€ in the resistive state even when the light is switched off. While the SSPD is latched, Eve can simulate SSPD single-photon response by sending strong light pulses, thus deceiving Bob. We developed the experimental setup for investigation of a dependence on latching threshold of SSPD on optical pulse length and peak power. By knowing latching threshold it is possible to understand essential requirements for development countermeasures against blinding attack on quantum key distribution system with SSPDs.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ kovalyuk @			Serial	1116
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	Author	Semenov, A. V.; Devyatov, I. A.; Ryabchun, S. A.; Maslennikov, S. N.; Maslennikova, A. S.; Larionov, P. A.; Voronov, B. M.; Chulkova, G. M.
	Title	Absorption of terahertz electromagnetic radiation in dirty superconducting film at arbitrary type of the spectral functions			Type	Journal Article
	Year	2011	Publication	Rus. J. Radio Electron.	Abbreviated Journal	Rus. J. Radio Electron.
	Volume		Issue	10	Pages
	Keywords	terahertz electromagnetic radiation; superconductors; detectors of terahertz range
	Abstract	A problem of absorption of high-frequency electromagnetic field in dirty superconductor is treated within Keldysh technic. Expression for the source term in the kinetic equation for quasiparticle distribution function is derived. The result is significant for deriving a consistent microscopic theory of superconducting detectors for terahertz frequency range, perspective detectors on kinetic inductance of current-biased superconducting strip and on Josephson inductance of tunnel.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes	7 pages			Approved	no
	Call Number				Serial	1117
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	Author	Ferrari, S.; Kovalyuk, V.; Hartmann, W.; Vetter, A.; Kahl, O.; Lee, C.; Korneev, A.; Rockstuhl, C.; Gol'tsman, G.; Pernice, W.
	Title	Hot-spot relaxation time current dependence in niobium nitride waveguide-integrated superconducting nanowire single-photon detectors			Type	Journal Article
	Year	2017	Publication	Opt. Express	Abbreviated Journal	Opt. Express
	Volume	25	Issue	8	Pages	8739-8750
	Keywords	SSPD, SNSPD, photon counting; Infrared; Quantum detectors; Integrated optics; Multiphoton processes; Photon statistics
	Abstract	We investigate how the bias current affects the hot-spot relaxation dynamics in niobium nitride. We use for this purpose a near-infrared pump-probe technique on a waveguide-integrated superconducting nanowire single-photon detector driven in the two-photon regime. We observe a strong increase in the picosecond relaxation time for higher bias currents. A minimum relaxation time of (22 +/- 1)ps is obtained when applying a bias current of 50% of the switching current at 1.7 K bath temperature. We also propose a practical approach to accurately estimate the photon detection regimes based on the reconstruction of the measured detector tomography at different bias currents and for different illumination conditions.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ kovalyuk @			Serial	1118
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	Author	Kahl, O.; Ferrari, S.; Kovalyuk, V.; Vetter, A.; Lewes-Malandrakis, G.; Nebel, C.; Korneev, A.; Goltsman, G.; Pernice, W.
	Title	Spectrally multiplexed single-photon detection with hybrid superconducting nanophotonic circuits			Type	Journal Article
	Year	2017	Publication	Optica	Abbreviated Journal	Optica
	Volume	4	Issue	5	Pages	557-562
	Keywords	Waveguide integrated superconducting single-photon detectors; Nanophotonics and photonic crystals; Quantum detectors; Spectrometers and spectroscopic instrumentation
	Abstract	The detection of individual photons by superconducting nanowire single-photon detectors is an inherently binary mechanism, revealing either their absence or presence while concealing their spectral information. For multicolor imaging techniques, such as single-photon spectroscopy, fluorescence resonance energy transfer microscopy, and fluorescence correlation spectroscopy, wavelength discrimination is essential and mandates spectral separation prior to detection. Here, we adopt an approach borrowed from quantum photonic integration to realize a compact and scalable waveguide-integrated single-photon spectrometer capable of parallel detection on multiple wavelength channels, with temporal resolution below 50 ps and dark count rates below 10 Hz at 80% of the devices' critical current. We demonstrate multidetector devices for telecommunication and visible wavelengths, and showcase their performance by imaging silicon vacancy color centers in diamond nanoclusters. The fully integrated hybrid superconducting nanophotonic circuits enable simultaneous spectroscopy and lifetime mapping for correlative imaging and provide the ingredients for quantum wavelength-division multiplexing on a chip.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ kovalyuk @			Serial	1119
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	Author	Peltonen, J. T.; Peng, Z. H.; Korneeva, Yu. P.; Voronov, B. M.; Korneev, A. A.; Semenov, A. V.; Gol'tsman, G. N.; Tsai, J. S; Astafiev, Oleg
	Title	Coherent dynamics and decoherence in a superconducting weak link			Type	Journal Article
	Year	2016	Publication	Physic. Rev. B,	Abbreviated Journal	Physic. Rev. B,
	Volume	94	Issue		Pages	180508
	Keywords
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ akorneev @			Serial	1123
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	Author	Korneev, Alexander; Golt'sman, Gregory; Pernice, Wolfram
	Title	Photonic integration meets single-photon detection			Type	Miscellaneous
	Year	2015	Publication	Laser Focus World	Abbreviated Journal	Laser Focus World
	Volume	51	Issue	5	Pages	47-50
	Keywords	optical waveguide SSPD, SNSPD
	Abstract	By embedding superconducting nanowire single-photon detectors (SNSPDs) in nanophotonic circuits, these waveguide-integrated detectors are a key building block for future on-chip quantum computing applications.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ akorneev @			Serial	1126
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	Author	Kovalyuk, V.; Ferrari, S.; Kahl, O.; Semenov, A.; Shcherbatenko, M.; Lobanov, Y.; Ozhegov, R.; Korneev, A.; Kaurova, N.; Voronov, B.; Pernice, W.; Gol'tsman, G.
	Title	On-chip coherent detection with quantum limited sensitivity			Type	Journal Article
	Year	2017	Publication	Sci Rep	Abbreviated Journal	Sci Rep
	Volume	7	Issue	1	Pages	4812
	Keywords	waveguide, SSPD, SNSPD
	Abstract	While single photon detectors provide superior intensity sensitivity, spectral resolution is usually lost after the detection event. Yet for applications in low signal infrared spectroscopy recovering information about the photon's frequency contributions is essential. Here we use highly efficient waveguide integrated superconducting single-photon detectors for on-chip coherent detection. In a single nanophotonic device, we demonstrate both single-photon counting with up to 86% on-chip detection efficiency, as well as heterodyne coherent detection with spectral resolution f/f exceeding 10(11). By mixing a local oscillator with the single photon signal field, we observe frequency modulation at the intermediate frequency with ultra-low local oscillator power in the femto-Watt range. By optimizing the nanowire geometry and the working parameters of the detection scheme, we reach quantum-limited sensitivity. Our approach enables to realize matrix integrated heterodyne nanophotonic devices in the C-band wavelength range, for classical and quantum optics applications where single-photon counting as well as high spectral resolution are required simultaneously.
	Address	National Research University Higher School of Economics, Moscow, 101000, Russia. ggoltsman@hse.ru
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2045-2322	ISBN		Medium
	Area		Expedition		Conference
	Notes	PMID:28684752; PMCID:PMC5500578			Approved	no
	Call Number	RPLAB @ kovalyuk @			Serial	1129
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	Author	Anosov, A. A.; Nemchenko, O. Yu.; Less, Yu. A.; Kazanskii, A. S.; Mansfel'd, A. D.
	Title	Possibilities of acoustic thermometry for controlling targeted drug delivery			Type	Journal Article
	Year	2015	Publication	Acoust. Phys.	Abbreviated Journal
	Volume	61	Issue	4	Pages	488-493
	Keywords	acoustic thermometry, liposome suspension, thermography
	Abstract	Model acoustic thermometry experiments were conducted during heating of an aqueous liposome suspension. Heating was done to achieve the liposome phase transition temperature. At the moment of the phase transition, the thermal acoustic signal achieved a maximum and decreased, despite continued heating. During subsequent cooling of the suspension, when lipids again passed through the phase transition point, the thermal acoustic signal again increased, despite a reduction in temperature. This effect is related to an increase in ultrasound absorption by the liposome suspension at the moment of the lipid phase transition. The result shows that acoustic thermography can be used to control targeted delivery of drugs mixed in thermally sensitive liposomes, the integrity of which is violated during heating to the phase transition temperature.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1130
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	Author	Anosov, A. A.; Barabanenkov, Yu. N.; Kazanskii, A. S.; Less, Yu. A.; Sharakshane, A. S.
	Title	The inverse problem of acoustothermography with correlation reception of thermal acoustic radiation			Type	Journal Article
	Year	2009	Publication	Acoust. Phys.	Abbreviated Journal
	Volume	55	Issue	1	Pages	114-119
	Keywords	acoustic thermography, acoustothermography
	Abstract	For the one-dimensional inverse problem of acoustothermography with correlation reception of thermal acoustic radiation, an integral equation is presented and experimentally verified. A method of solving the inverse problem is proposed. The method is based on combining the correlation functions of thermal acoustic radiation that were obtained for different distances between the receivers.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1131
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	Author	Лесс, Ю. А.; Кирсанов, Ю. А.
	Title	Былое и думы. Посвящение эпохе Н. Н. Малова, Е. М. Гершензона, В. С. Эткина			Type	Miscellaneous
	Year	2015	Publication	ПРФЛ	Abbreviated Journal
	Volume		Issue		Pages
	Keywords	физфак МПГУ, физфак МГПИ, ПРФЛ
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1132
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	Author	Kovalyuk, V.; Ferrari, S.; Kahl, O.; Semenov, A.; Lobanov, Y.; Shcherbatenko, M.; Korneev, A.; Pernice, W.; Goltsman, G.
	Title	Waveguide integrated superconducting single-photon detector for on-chip quantum and spectral photonic application			Type	Conference Article
	Year	2017	Publication	J. Phys.: Conf. Ser.	Abbreviated Journal	J. Phys.: Conf. Ser.
	Volume	917	Issue		Pages	062032
	Keywords	SSPD, SNSPD, waveguide
	Abstract	With use of the travelling-wave geometry approach, integrated superconductor- nanophotonic devices based on silicon nitride nanophotonic waveguide with a superconducting NbN-nanowire suited on top of the waveguide were fabricated. NbN-nanowire was operated as a single-photon counting detector with up to 92 % on-chip detection efficiency in the coherent mode, serving as a highly sensitive IR heterodyne mixer with spectral resolution (f/df) greater than 106 in C-band at 1550 nm wavelength
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ kovalyuk @			Serial	1140
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	Author	Zubkova, E.; An, P.; Kovalyuk, V.; Korneev, A.; Ferrari, S.; Pernice, W.; Goltsman, G.
	Title	Integrated Bragg waveguides as an efficient optical notch filter on silicon nitride platform			Type	Conference Article
	Year	2017	Publication	J. Phys.: Conf. Ser.	Abbreviated Journal	J. Phys.: Conf. Ser.
	Volume	917	Issue		Pages	062042
	Keywords	Si3N4, Bragg waveguides
	Abstract	We modeled and fabricated integrated optical Bragg waveguides on a silicon nitride (Si3N4) platform. These waveguides would serve as efficient notch-filters with the desired characteristics. Transmission spectra of the fabricated integrated notch filters have been measured and attenuation at the desired wavelength of 1550 nm down to -43 dB was observed. Performance of the filters has been studied depending on different parameters, such as pitch, filling factor, and height of teeth of the Bragg grating
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ kovalyuk @			Serial	1141
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	Author	Chuprina, I. N.; An, P. P.; Zubkova, E. G.; Kovalyuk, V. V.; Kalachev, A. A.; Gol'tsman, G. N.
	Title	Optimisation of spontaneous four-wave mixing in a ring microcavity			Type	Conference Article
	Year	2017	Publication	J. Phys.: Conf. Ser.	Abbreviated Journal	J. Phys.: Conf. Ser.
	Volume	47	Issue	10	Pages	887-891
	Keywords	ring microcavity
	Abstract	Abstract. A theory of spontaneous four-wave mixing in a ring microcavity is developed. The rate of emission of biphotons for pulsed and monochromatic pumping with allowance for the disper- sion of group velocities is analytically calculated. In the first case, pulses in the form of an increasing exponential are considered, which are optimal for excitation of an individual resonator mode. The behaviour of the group velocity dispersion as a function of the width and height of the waveguide is studied for a specific case of a ring microcavity made of silicon nitride. The results of the numeri- cal calculation are in good agreement with the experimental data. The ring microcavity is made of two types of waveguides: com- pletely etched and half etched. It is found that the latter allow for better control over the parameters in the manufacturing process, making them more predictable.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ kovalyuk @			Serial	1142
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	Author	Манова, Н.Н.; Корнеева, Ю. П.; Корнеев, А. А., Гольцман, Г. Н.
	Title	Cверхпроводящий однофотонный детектор, интегрированный с оптическим резонатором			Type	Conference Article
	Year	2010	Publication	Науч. сессия НИЯУ МИФИ	Abbreviated Journal	Науч. сессия НИЯУ МИФИ
	Volume		Issue		Pages	92-93
	Keywords	SSPD
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN	978-5-7262-1227-2	Medium
	Area		Expedition		Conference
	Notes	УДК 533.14(06)+004.056(06) Фотоника и информационная оптика			Approved	no
	Call Number				Serial	1143
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	Author	Корнеева, Ю. П.; Флоря, И. Н.; Корнеев, А. А.; Гольцман, Г. Н.
	Title	Cверхпроводящий однофотонный детектор для дальнего ИК диапазона длин волн			Type	Conference Article
	Year	2010	Publication	Науч. сессия НИЯУ МИФИ	Abbreviated Journal	Науч. сессия НИЯУ МИФИ
	Volume		Issue		Pages	46-47
	Keywords	SSPD
	Abstract	Мы представляем быстродействующий сверхпроводниковый однофотонный детектор (SSPD) для дальнего инфракрасного диапазона на основе ультратонкой монокристаллической пленки NbN толщиной 3 нм, состоящий из параллельных полосок. QE на длине волны 1,5.μм и 1,3 μм для предложенного SSPD практически одинаковы. SSPD показывает отклик длительностью 200 пс, что открывает путь к детекторам, обладающим скоростью счета свыше 1 ГГц.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN	978-5-7262-1227-2	Medium
	Area		Expedition		Conference
	Notes	УДК 533.14(06)+004.056(06) Фотоника и информационная оптика			Approved	no
	Call Number				Serial	1144
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	Author	Флоря, И. Н.
	Title	Ультрабыстрый однофотонный детектор для оптических применений			Type	Conference Article
	Year	2009	Publication	Науч. сессия МИФИ	Abbreviated Journal	Науч. сессия МИФИ
	Volume		Issue		Pages	45-46
	Keywords	SSPD
	Abstract	Представлен сверхпроводниковый однофотонный детектор (SSPD) на основе ультратонкой пленки NbN, обладающий рекордным быстродействием. Активный элемент выполнен в виде N сверхпроводящих полосок соединенных параллельно, покрывающих площадку размером 10 мкм х 10 мкм. Для SSPD с N=12 длительность импульса напряжения составляет 200 пс. Полученные результаты открывают путь к детекторам обладающими скоростью счета свыше 1 ГГц, что делает SSPDs весьма привлекательными во многих применениях, в частности для квантовой криптографии. SSPD хорошо согласуется с оптоволокном и легко может быть интегрирован в полностью готовую для работы приемную систему.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN	978-5-7262-1042-1	Medium
	Area		Expedition		Conference
	Notes	УДК 533.14(06)+004.056(06) Фотоника и информационная оптика			Approved	no
	Call Number				Serial	1145
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	Author	Bandurin, D. A.; Svintsov, D.; Gayduchenko, I.; Xu, S. G.; Principi, A.; Moskotin, M.; Tretyakov, I.; Yagodkin, D.; Zhukov, S.; Taniguchi, T.; Watanabe, K.; Grigorieva, I. V.; Polini, M.; Goltsman, G. N.; Geim, A. K.; Fedorov, G.
	Title	Resonant terahertz detection using graphene plasmons			Type	Journal Article
	Year	2018	Publication	Nat. Commun.	Abbreviated Journal	Nat. Commun.
	Volume	9	Issue		Pages	5392 (1 to 8)
	Keywords	THz, graphene plasmons
	Abstract	Plasmons, collective oscillations of electron systems, can efficiently couple light and electric current, and thus can be used to create sub-wavelength photodetectors, radiation mixers, and on-chip spectrometers. Despite considerable effort, it has proven challenging to implement plasmonic devices operating at terahertz frequencies. The material capable to meet this challenge is graphene as it supports long-lived electrically tunable plasmons. Here we demonstrate plasmon-assisted resonant detection of terahertz radiation by antenna-coupled graphene transistors that act as both plasmonic Fabry-Perot cavities and rectifying elements. By varying the plasmon velocity using gate voltage, we tune our detectors between multiple resonant modes and exploit this functionality to measure plasmon wavelength and lifetime in bilayer graphene as well as to probe collective modes in its moire minibands. Our devices offer a convenient tool for further plasmonic research that is often exceedingly difficult under non-ambient conditions (e.g. cryogenic temperatures) and promise a viable route for various photonic applications.
	Address	Physics Department, Moscow State University of Education (MSPU), Moscow, Russian Federation, 119435. fedorov.ge@mipt.ru
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2041-1723	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1148
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	Author	Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G.
	Title	Room temperature silicon detector for IR range coated with Ag₂S quantum dots			Type	Journal Article
	Year	2019	Publication	Phys. Status Solidi RRL	Abbreviated Journal	Phys. Status Solidi RRL
	Volume	13	Issue	9	Pages	1900187-(1-6)
	Keywords
	Abstract	For decades, silicon has been the chief technological semiconducting material of modern microelectronics and has a strong influence on all aspects of the society. Applications of Si-based optoelectronic devices are limited to the visible and near infrared (IR) ranges. For photons with an energy less than 1.12 eV, silicon is almost transparent. The expansion of the Si absorption to shorter wavelengths of the IR range is of considerable interest for optoelectronic applications. By creating impurity states in Si, it is possible to cause sub-bandgap photon absorption. Herein, an elegant and effective technology of extending the photo-response of Si toward the IR range is presented. This approach is based on the use of Ag 2 S quantum dots (QDs) planted on the surface of Si to create impurity states in the Si bandgap. The specific sensitivity of the room temperature zero-bias Si_Ag 2 Sp detector is 10 11 cm Hz W 1 at 1.55 μm. Given the variety of available QDs and the ease of extending the photo-response of Si toward the IR range, these findings open a path toward future studies and development of Si detectors for technological applications. The current research at the interface of physics and chemistry is also of fundamental importance to the development of Si optoelectronics.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1862-6254	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1149
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	Author	Семенов, Александр Владимирович
	Title	Проскальзывание фазы, поглощение электромагнитного излучения и формирование отклика в детекторах на основе узких полосок сверхпроводников			Type	Manuscript
	Year	2010	Publication	М. МПГУ	Abbreviated Journal
	Volume		Issue		Pages
	Keywords	SSPD, SNSPD, response
	Abstract
	Address
	Corporate Author				Thesis	Ph.D. thesis
	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
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	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
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	Notes				Approved	no
	Call Number				Serial	1150
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	Author	Tretyakov, I.; Svyatodukh, S.; Perepelitsa, A.; Ryabchun, S.; Kaurova, N.; Shurakov, A.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G.
	Title	Ag₂S QDs/Si heterostructure-based ultrasensitive SWIR range detector			Type	Journal Article
	Year	2020	Publication	Nanomaterials (Basel)	Abbreviated Journal	Nanomaterials (Basel)
	Volume	10	Issue	5	Pages	1-12
	Keywords	detector; quantum dots; short-wave infrared range; silicon
	Abstract	In the 20(th) century, microelectronics was revolutionized by silicon-its semiconducting properties finally made it possible to reduce the size of electronic components to a few nanometers. The ability to control the semiconducting properties of Si on the nanometer scale promises a breakthrough in the development of Si-based technologies. In this paper, we present the results of our experimental studies of the photovoltaic effect in Ag2S QD/Si heterostructures in the short-wave infrared range. At room temperature, the Ag2S/Si heterostructures offer a noise-equivalent power of 1.1 x 10(-10) W/ radicalHz. The spectral analysis of the photoresponse of the Ag2S/Si heterostructures has made it possible to identify two main mechanisms behind it: the absorption of IR radiation by defects in the crystalline structure of the Ag2S QDs or by quantum QD-induced surface states in Si. This study has demonstrated an effective and low-cost way to create a sensitive room temperature SWIR photodetector which would be compatible with the Si complementary metal oxide semiconductor technology.
	Address	Laboratory of nonlinear optics, Zavoisky Physical-Technical Institute of the Russian Academy of Sciences, Kazan 420029, Russia
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	English	Summary Language		Original Title
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	Series Volume		Series Issue		Edition
	ISSN	2079-4991	ISBN		Medium
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	Notes	PMID:32365694; PMCID:PMC7712218			Approved	no
	Call Number				Serial	1151
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	Author	Shurakov, A.; Mikhailov, D.; Belikov, I.; Kaurova, N.; Zilberley, T.; Prikhodko, A.; Voronov, B.; Vasil’evskii, I.; Goltsman, G.
	Title	Planar Schottky diode with a Γ-shaped anode suspended bridge			Type	Conference Article
	Year	2020	Publication	J. Phys.: Conf. Ser.	Abbreviated Journal	J. Phys.: Conf. Ser.
	Volume	1695	Issue		Pages	012154
	Keywords	Schottky diode, GaAs, InP substrate
	Abstract	In this paper we report on the fabrication of a planar Schottky diode utilizing a Г-shaped anode suspended bridge. The bridge maintains transition between the top and bottom level planes of a 1.4 µm thick GaAs mesa. To implement the profile of a suspended bridge and inward tilt of a mesa wall adjacent to it, we make use of an anisotropic etching of gallium arsenide. The geometry proposed enables the fabrication of a diode with mesa of an arbitrary thickness to mitigate AC losses in the diode layered structure at terahertz frequencies of interest. For frequencies beyond 1 THz, it is also beneficial to use the geometry for the implementation of n-GaAs/n-InGaAs heterojunction Schottky diodes grown on InP substrate.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
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	Series Volume		Series Issue		Edition
	ISSN	1742-6588	ISBN		Medium
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	Notes				Approved	no
	Call Number				Serial	1152
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	Author	Shurakov, A.; Prikhodko, A.; Mikhailov, D.; Belikov, I.; Kaurova, N.; Voronov, B.; Goltsman, G.
	Title	Efficiency of a microwave reflectometry for readout of a THz multipixel Schottky diode direct detector			Type	Conference Article
	Year	2020	Publication	J. Phys.: Conf. Ser.	Abbreviated Journal	J. Phys.: Conf. Ser.
	Volume	1695	Issue		Pages	012156
	Keywords	Shottky diode, THz, direct detector, multipixel camera
	Abstract	In this paper we report on the results of investigation of efficiency of a microwave reflectometry for readout of a terahertz multipixel Schottky diode direct detector. Decent capabilities of the microwave reflectometry readout were earlier justified by us for a hot electron bolometric direct detector. In case of a planar Schottky diode, we observed increase of an optical noise equivalent power by a factor of 2 compared to that measured within a conventional readout scheme. For implementation of a multipixel camera, a microwave reflectometer is to be used to readout each row of the camera, and the row switching is to be maintained by a CMOS analog multiplexer. The diodes within a row have to be equipped with filters to distribute the probing microwave signal properly. The simultaneous use of analog multiplexing and microwave reflectometry enables to reduce the camera response time by a factor of its number of columns.
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	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
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	Series Volume		Series Issue		Edition
	ISSN	1742-6588	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1153
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	Author	Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G.
	Title	Silicon room temperature IR detectors coated with Ag₂S quantum dots			Type	Conference Article
	Year	2019	Publication	Proc. IWQO	Abbreviated Journal	Proc. IWQO
	Volume		Issue		Pages	369-371
	Keywords	silicon detector, quantum dot, IR, surface states
	Abstract	For decades silicon has been the chief technological semiconducting material of modern microelectronics. Application of silicon detectors in optoelectronic devices are limited to the visible and near infrared ranges, due to their transparency for radiation with a wavelength higher than 1.1 μm. The expansion Si absorption towards longer wave lengths is a considerable interest to optoelectronic applications. In this work we present an elegant and effective solution to this problem using Ag2S quantum dots, creating impurity states in Si to cause sub-band gap photon absorption. The sensitivity of room temperature zero-bias Si_Ag2S detectors, which we obtained is 1011 cmHzW . Given the variety of QDs parameters such as: material, dimensions, our results open a path towards the future study and development of Si detectors for technological applications.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN	978-5-89513-451-1	Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1154
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	Author	Shurakov, A.; Mikhalev, P.; Mikhailov, D.; Mityashkin, V.; Tretyakov, I.; Kardakova, A.; Belikov, I.; Kaurova, N.; Voronov, B.; Vasil’evskii, I.; Gol’tsman, G.
	Title	Ti/Au/n-GaAs planar Schottky diode with a moderately Si-doped matching sublayer			Type	Journal Article
	Year	2018	Publication	Microelectronic Engineering	Abbreviated Journal	Microelectronic Engineering
	Volume	195	Issue		Pages	26-31
	Keywords
	Abstract	In this paper, we report on the results of the study of the Ti/Au/n-GaAs planar Schottky diodes (PSD) intended for the wideband detection of terahertz radiation. The two types of the PSD devices were compared having either the dual n/n+ silicon dopant profile or the triple one with a moderately doped matching sublayer inserted. All the diodes demonstrated no noticeable temperature dependence of ideality factors and barrier heights, whose values covered the ranges of 1.15–1.50 and 0.75–0.85 eV, respectively. We observed the lowering of the flat band barrier height of ∼80 meV after introducing the matching sublayer into the GaAs sandwich. For both the devices types, the series resistance value as low as 20 Ω was obtained. To extract the total parasitic capacitance, we performed the Y-parameters analysis within the electromagnetic modeling of the PSD's behavior via the finite-element method. The capacitance values of 12–12.2 fF were obtained and further verified by measuring the diodes' response voltages in the frequency range of 400–480 GHz. We also calculated the AC current density distribution within the layered structures similar to those being experimentally studied. It was demonstrated that insertion of the moderately Si-doped matching sublayer might be beneficial for implementation of a PSD intended for the operation within the ‘super-THz’ frequency range.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0167-9317	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1155
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	Author	Shurakov, A.; Lobanov, Y.; Goltsman, G.
	Title	Superconducting hot-electron bolometer: from the discovery of hot-electron phenomena to practical applications			Type	Journal Article
	Year	2015	Publication	Supercond. Sci. Technol.	Abbreviated Journal	Supercond. Sci. Technol.
	Volume	29	Issue	2	Pages	023001
	Keywords	HEB
	Abstract	The discovery of hot-electron phenomena in a thin superconducting film in the last century was followed by numerous experimental studies of its appearance in different materials aiming for a better understanding of the phenomena and consequent implementation of terahertz detection systems for practical applications. In contrast to the competitors such as superconductor-insulator-superconductor tunnel junctions and Schottky diodes, the hot electron bolometer (HEB) did not demonstrate any frequency limitation of the detection mechanism. The latter, in conjunction with a decent performance, rapidly made the HEB mixer the most attractive candidate for heterodyne observations at frequencies above 1 THz. The successful operation of practical instruments (the Heinrich Hertz Telescope, the Receiver Lab Telescope, APEX, SOFIA, Hershel) ensures the importance of the HEB technology despite the lack of rigorous theoretical routine for predicting the performance. In this review, we provide a summary of experimental and theoretical studies devoted to understanding the HEB physics, and an overview of various fabrication routes and materials.
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	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
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	Series Volume		Series Issue		Edition
	ISSN	0953-2048	ISBN		Medium
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	Notes				Approved	no
	Call Number				Serial	1156
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	Author	Shcherbatenko, Michael; Lobanov, Yury; Benderov, Oleg; Shurakov, Alexander; Ignatov, Anton; Titova, Nadezhda; Finkel, Matvey; Maslennikov, Sergey; Kaurova, Natalya; Voronov, Boris M.; Rodin, Alexander; Klapwijk, Teunis M.; Gol'tsman, Gregory N.
	Title	Antenna-coupled 30 THz hot electron bolometer mixers			Type	Conference Article
	Year	2015	Publication	Proc. 26^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 26^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	27
	Keywords	HEB mixer, IR, mid-IR, 30 THz, antenna-coupled
	Abstract	We report on design and characterization of a superconducting Hot Electron Bolometer Mixer integrated with a logarithmic spiral antenna for mid-IR range observations. The antenna parameters have been adjusted to achieve the ultimate performance at 10 µm (30 THz) range where O3, NH3, CO2, CH4, N2O,…. lines in the Earth’s atmosphere, in planetary atmospheres and in the interstellar space can be observed. The HEB mixer is made of a thin NbN film deposited onto a GaAs substrate. To couple the radiation we rely on the quasioptical approach: the device is glued to a semi-spherical germanium lens with diameter~ 3 mm. A wet cryostat equipped with a germanium window and narrow band-pass filter is used to characterize the antenna and estimate the mixer performance.
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	Notes				Approved	no
	Call Number				Serial	1157
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	Author	Shurakov, Alexander; Maslennikov, Sergey; Tong, Cheuk-yu E.; Gol’tsman, Gregory
	Title	Performance of an HEB direct detector utilizing a microwave reflection readout scheme			Type	Conference Article
	Year	2015	Publication	Proc. 26^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 26^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	36
	Keywords	HEB detector
	Abstract	We report the results of our study on the performance of a hot electron bolometric (HEB) direct detector, operated by a microwave pump. The HEB devices used in this work were made from NbN thin film deposited on high resistivity silicon with an in-situ fabrication process. The experimental setup employed is similar to the one described in [1]. The detector chips were glued to a silicon lens clamped to a copper holder mounted on the cold plate of a liquid helium cryostat. Thermal link between the lens and the holder was maintained by a thin indium shim. The HEBs were operated at a bath temperature of about 4.4 K. Conventional phonon pump, commonly realized by raising the bath temperature of the detector, was substituted by a microwave one. In this case, a CW microwave signal is injected to the device through a directional coupler connected directly to the detector holder. The power incident on the HEB device was typically 1-2 μW, and the pump frequency was in the range of 0.5-1.5 GHz. The signal sources were 2 black bodies held at temperatures of 295 K and 77 K. A chopper wheel placed in front of the cryostat window switched the input to the detector between the 2 sources. A modulation frequency of several kilohertz was chosen in order to reduce the effects of the HEB’s flicker noise. A cold mesh filter was used to define the input bandwidth of the detector. The reflected microwave signal from the HEB device was fed into a low noise amplifier, the output of which is connected to a room temperature Schottky microwave power detector. This Schottky detector, in conjunction with a lock-in amplifier, demodulated the input signal modulation from the copper wheel. As the input load was switched, the impedance of the HEB device at the microwave pump frequency also changed in response to the incident signal power variation. Therefore the reflected microwave power follows the incident signal modulation. The derived responsivity from this detection system nicely correlates with the HEB impedance. In order to provide a quantitative description of the impedance variation of the HEB device and the impact of a microwave pump, we have numerically solved the heat balance equations written for the NbN bridge and its surrounding thermal heat sink [2]. Our model also accounts for the impact of the operating frequency of the detector because of non-uniform absorption of low-frequency photons across the NbN bridge [3]. In our measurements we varied the signal source wavelength from 2 mm down to near infrared range, and hence we indirectly performed the impedance measurements at frequencies below, around and far beyond the superconducting gap. Preliminary results show good agreement between the experiment and theoretical prediction. Further measurements are still in progress. [1] A. Shurakov et al., “A Microwave Reflection Readout Scheme for Hot Electron Bolometric Direct Detector”, to appear in IEEE Trans. THz Sci. Tech., 2015. [2] S. Maslennikov, “RF heating efficiency of the terahertz superconducting hot-electron bolometer”, http://arxiv.org/pdf/1404.5276v5.pdf, 2014. [3] W. Miao et al., “Non-uniform absorption of terahertz radiation on superconducting hot electron bolometer microbridges”, Appl. Phys. Let., 104, 052605, 2014.
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	Call Number				Serial	1158
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	Author	Tretyakov, I.; Maslennikov, S.; Semenov, A.; Safir, O.; Finkel, M.; Ryabchun, S.; Kaurova, N.; Voronov, B.; Goltsman, G.; Klapwijk, T. M.
	Title	Impact of operating conditions on noise and gain bandwidth of NbN HEB mixers			Type	Conference Article
	Year	2015	Publication	Proc. 26^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 26^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	39
	Keywords	NbN HEB mixers
	Abstract	Hot-electron bolometer mixers (HEB’s) are the most promising devices as mixing element for terahertz spectroscopy and astronomy at frequencies beyond 1.4 THz. They have a low noise temperature and low demands on local oscillator (LO) power. 1,2 An important limitation is the IF bandwidth, of the order of a few GHz, and which in principle depends on energy relaxation due to electron- phonon processes and on diffusion-cooling. It has been proposed by Prober that a reduction in length of the HEB would lead to an increased bandwidth. 3 This appeared to be achieved by Tretyakov et al by measuring the gain bandwidth close to the critical temperature of the NbN. 2 Unfortunately, the noise bandwidth of similar devices operated at temperatures around 4.2 K appear not depend on the length. The fundamental problem to be addressed is the position-dependent superconducting state of the HEB- devices under operating conditions, which determines the conditions for the cooling of the hot quasiparticles. Some progress has been made by Barends et al in a semi-empirical model to describe the I,V curves under operating conditions at a bath temperature around 4.2 K. 4 In more recent work Vercruyssen et al have analyzed the I,V curve, without any LO-equivalent bias, of a model NSN system. 5 This work suggests that the most appropriate model for an HEB under operating conditions is that of a potential-well in the superconducting gap in the center of the NbN, analogous the bimodal superconducting state described by Vercruyssen et al. Hot quasiparticles in the well can not diffuse out and can only cool by electron-phonon processes, those with higher energies than the heights of the walls of the well can diffuse out. Using this working hypothesis we have carried out experiments on a sub-micrometer NbN bridge connected to a gold (Au) planar spiral antenna. An in situ process is used to deposit Au on NbN. The Au is removed in the center to define the uncovered NbN, which will act as the superconducting mixer itself. The antenna is deposited on the remaining Au layer on the NbN. The Au contacts suppress the energy gap of the NbN film located underneath the gold layer 7,8 . The measured resistive transition is shown in Fig.1. It clearly shows a T c of the bilayer at 6.2 K and the resistive transition of the NbN itself around 9 K. In addition we show the measured noise bandwidth (red squares) for different bath temperatures. Clearly the noise bandwidth increases strongly by increasing the bath temperature from 5 K to 8 K, up to 13 GHz. We interpret this pattern as evidence for improved out-diffusion of hot electrons due to normal banks and a shallow superconducting potential well compared to k B T. As expected the noise temperature in this regime is much bigger than when biased at 4.2 K. R EFERENCES 1 W. Zhang, P. Khosropanah, J. R. Gao, E. L. Kollberg, K. S. Yngvesson, T. Bansal, R. Barends, and T. M. Klapwijk Appl. Phys. Lett. 96, 111113, (2010). 2 Ivan Tretyakov, Sergey Ryabchun, Matvey Finkel, Anna Maslennikova, Natalia Kaurova, Anastasia Lobastova, Boris Voronov, and Gregory Gol’tsman Appl. Phys. Lett. 98, 033507 (2011). 3 D. E. Prober, Appl. Phys. Lett. 62, 2119 (1992). 4 R. Barends, M. Hajenius, J. R. Gao, and T. M. Klapwijk, Appl. Phys. Lett. 87, 263506 (2005). 5 N. Vercruyssen, T. G. A. Verhagen, M. G. Flokstra, J. P. Pekola, and T. M. Klapwijk Physical Review B 85, 224503 (2012).
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	Notes				Approved	no
	Call Number				Serial	1159
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	Author	Trifonov, Andrey; Tong, C. Edward; Lobanov, Yury; Kaurova, Natalia; Blundell, Raymond; Gol’tsman, Gregory
	Title	An investigation of the DC and IF performance of silicon-membrane HEB mixer elements			Type	Conference Article
	Year	2015	Publication	Proc. 26^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 26^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	40
	Keywords	silicon-membrane HEB waveguide mixer
	Abstract	We report on our initial development towards a 2x2 multi-pixel HEB waveguide mixer for operation at 1.4 THz. We have successfully fabricated devices comprising an NbN bridge integrated with antenna test structure using a silicon membrane as the supporting substrate. DC measurements of the test chips demonstrate critical current from 0.1 – 1mA depending on the size of device, with T c of around 10 K and ΔTc ~ 0.8 K.
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	Language		Summary Language		Original Title
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	Notes				Approved	no
	Call Number				Serial	1160
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	Author	Shurakov, A.; Seliverstov, S.; Kaurova, N.; Finkel, M.; Voronov, B.; Goltsman, G.
	Title	Input bandwidth of hot electron bolometer with spiral antenna			Type	Journal Article
	Year	2012	Publication	IEEE Trans. THz Sci. Technol.	Abbreviated Journal	IEEE Trans. THz Sci. Technol.
	Volume	2	Issue	4	Pages	400-405
	Keywords	NbN HEB bolometers bandwidth, log-spiral antenna
	Abstract	We report the results of our study of the input bandwidth of hot electron bolometers (HEB) embedded into the planar log-spiral antenna. The sensitive element is made of the ultrathin superconducting NbN film patterned as a bridge at the feed of the antenna. The contacts between the antenna and a sensitive element are made from in situ deposited gold (i.e., deposited over NbN film without breaking vacuum), which gives high quality contacts and makes the response of the HEB at higher frequencies less affected by the RF loss. An accurate experimental spectroscopic procedure is demonstrated that leads to the confirmation of the wide ( 8 THz) bandwidth in this antenna coupled device.
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	Series Volume		Series Issue		Edition
	ISSN	2156-342X	ISBN		Medium
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	Notes				Approved	no
	Call Number				Serial	1161
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	Author	Samsonova, Alena; Zolotov, Philipp; Baeva, Elmira; Lomakin, Andrey; Titova, Nadezhda; Kardakova, Anna; Goltsman, Gregory
	Title	Signatures of surface magnetic disorder in thin niobium films			Type	Journal Article
	Year	2021	Publication	IEEE Trans. Appl. Supercond.	Abbreviated Journal
	Volume		Issue		Pages	1-1
	Keywords	Temperature measurement, Temperature dependence, Superconducting magnets, Superconducting transition temperature, Substrates, Resistance, Scattering
	Abstract	We present our studies on the evolution of the normal and superconducting properties with thickness of thin Nb films with a low level of non-magnetic disorder (kFl 150 for the thickest film in the set). The analysis of the superconducting behavior points to the presence of magnetic moments, hidden in the native oxide on the surface of Nb films. Using the Abrikosov-Gorkov theory, we obtain the density of surface magnetic moments of 1013 cm-2, which is in agreement with the previously reported data for Nb films.
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	Series Volume		Series Issue		Edition
	ISSN	1051-8223	ISBN		Medium
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	Notes				Approved	no
	Call Number				Serial	1162
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	Author	Baeva, E. M.; Titova, N. A.; Veyrat, L.; Sacépé, B.; Semenov, A. V.; Goltsman, G. N.; Kardakova, A. I.; Khrapai, V. S.
	Title	Thermal relaxation in metal films bottlenecked by diffuson lattice excitations of amorphous substrates			Type	Miscellaneous
	Year	2021	Publication	arXiv	Abbreviated Journal	arXiv
	Volume		Issue		Pages
	Keywords	metal films, NbN, InOx, Au/Ni, thermal relaxation
	Abstract	Here we examine the role of the amorphous insulating substrate in the thermal relaxation in thin NbN, InOx, and Au/Ni films at temperatures above 5 K. The studied samples are made up of metal bridges on an amorphous insulating layer lying on or suspended above a crystalline substrate. Noise thermometry was used to measure the electron temperature Te of the films as a function of Joule power per unit of area P2D. In all samples, we observe the dependence P2D∝Tne with the exponent n≃2, which is inconsistent with both electron-phonon coupling and Kapitza thermal resistance. In suspended samples, the functional dependence of P2D(Te) on the length of the amorphous insulating layer is consistent with the linear T-dependence of the thermal conductivity, which is related to lattice excitations (diffusons) for the phonon mean free path smaller than the dominant phonon wavelength. Our findings are important for understanding the operation of devices embedded in amorphous dielectrics.
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	Call Number				Serial	1163
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	Author	Baeva, E. M.; Titova, N. A.; Kardakova, A. I.; Piatrusha, S. U.; Khrapai, V. S.
	Title	Universal bottleneck for thermal relaxation in disordered metallic films			Type	Journal Article
	Year	2020	Publication	JETP Lett.	Abbreviated Journal	Jetp Lett.
	Volume	111	Issue	2	Pages	104-108
	Keywords	NbN disordered metallic films, thermal relaxation
	Abstract	We study the heat relaxation in current biased metallic films in the regime of strong electron–phonon coupling. A thermal gradient in the direction normal to the film is predicted, with a spatial temperature profile determined by the temperature-dependent heat conduction. In the case of strong phonon scattering, the heat conduction occurs predominantly via the electronic system and the profile is parabolic. This regime leads to the linear dependence of the noise temperature as a function of bias voltage, in spite of the fact that all the dimensions of the film are large compared to the electron–phonon relaxation length. This is in stark contrast to the conventional scenario of relaxation limited by the electron–phonon scattering rate. A preliminary experimental study of a 200-nm-thick NbN film indicates the relevance of our model for materials used in superconducting nanowire single-photon detectors.
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	Series Volume		Series Issue		Edition
	ISSN	0021-3640	ISBN		Medium
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	Notes				Approved	no
	Call Number				Serial	1164
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	Author	Titova, N. A.; Baeva, E. M.; Kardakova, A. I.; Goltsman, G. N.
	Title	Fabrication of NbN/SiN_x:H/SiO₂ membrane structures for study of heat conduction at low temperatures			Type	Conference Article
	Year	2020	Publication	J. Phys.: Conf. Ser.	Abbreviated Journal	J. Phys.: Conf. Ser.
	Volume	1695	Issue		Pages	012190
	Keywords	NbN films, insulating membrane
	Abstract	Here we report on the development of NbN/SiNx:H/SiO2-membrane structures for investigation of the thermal transport at low temperatures. Thin NbN films are known to be in the regime of a strong electron-phonon coupling, and one can assume that the phononic and electronic baths in the NbN are in local equilibrium. In such case, the cooling of the NbN-based devices strongly depends on acoustic matching to the substrate and substrate thermal characteristics. For the insulating membrane much thicker than the NbN film, our preliminary results demonstrate that the membrane serves as an additional channel for the thermal relaxation of the NbN sample. That implies a negligible role of thermal boundary resistance of the NbN-SiNx:H interface in comparison with the internal thermal resistance of the insulating membrane.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1742-6588	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1165
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	Author	Saveskul, N. A.; Titova, N. A.; Baeva, E. M.; Semenov, A. V.; Lubenchenko, A. V.; Saha, S.; Reddy, H.; Bogdanov, S. I.; Marinero, E. E.; Shalaev, V. M.; Boltasseva, A.; Khrapai, V. S.; Kardakova, A. I.; Goltsman, G. N.
	Title	Superconductivity behavior in epitaxial TiN films points to surface magnetic disorder			Type	Journal Article
	Year	2019	Publication	Phys. Rev. Applied	Abbreviated Journal	Phys. Rev. Applied
	Volume	12	Issue	5	Pages	054001
	Keywords	epitaxial TiN films
	Abstract	We analyze the evolution of the normal and superconducting properties of epitaxial TiN films, characterized by high Ioffe-Regel parameter values, as a function of the film thickness. As the film thickness decreases, we observe an increase of the residual resistivity, that becomes dominated by diffusive surface scattering for d≤20nm. At the same time, a substantial thickness-dependent reduction of the superconducting critical temperature is observed compared to the bulk TiN value. In such high-quality material films, this effect can be explained by a weak magnetic disorder residing in the surface layer with a characteristic magnetic defect density of approximately 1012cm−2. Our results suggest that surface magnetic disorder is generally present in oxidized TiN films.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2331-7019	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1166
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	Author	Kardakova, A.; Shishkin, A.; Semenov, A.; Goltsman, G. N.; Ryabchun, S.; Klapwijk, T. M.; Bousquet, J.; Eon, D.; Sacépé, B.; Klein, T.; Bustarret, E.
	Title	Relaxation of the resistive superconducting state in boron-doped diamond films			Type	Journal Article
	Year	2016	Publication	Phys. Rev. B	Abbreviated Journal	Phys. Rev. B
	Volume	93	Issue	6	Pages	064506
	Keywords	boron-doped diamond films, resistive superconducting state, relaxation time
	Abstract	We report a study of the relaxation time of the restoration of the resistive superconducting state in single crystalline boron-doped diamond using amplitude-modulated absorption of (sub-)THz radiation (AMAR). The films grown on an insulating diamond substrate have a low carrier density of about 2.5×1021cm−3 and a critical temperature of about 2K. By changing the modulation frequency we find a high-frequency rolloff which we associate with the characteristic time of energy relaxation between the electron and the phonon systems or the relaxation time for nonequilibrium superconductivity. Our main result is that the electron-phonon scattering time varies clearly as T−2, over the accessible temperature range of 1.7 to 2.2 K. In addition, we find, upon approaching the critical temperature Tc, evidence for an increasing relaxation time on both sides of Tc.
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	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2469-9950	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1167
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	Author	Titova, N.; Kardakova, A. I.; Tovpeko, N.; Ryabchun, S.; Mandal, S.; Morozov, D.; Klemencic, G. M.; Giblin, S. R.; Williams, O. A.; Goltsman, G. N.; Klapwijk, T. M.
	Title	Slow electron–phonon cooling in superconducting diamond films			Type	Journal Article
	Year	2017	Publication	IEEE Trans. Appl. Supercond.	Abbreviated Journal	IEEE Trans. Appl. Supercond.
	Volume	27	Issue	4	Pages	1-4
	Keywords	superconducting diamond films, electron-phonon cooling
	Abstract	We have measured the electron-phonon energy-relaxation time, τ eph , in superconducting boron-doped diamond films grown on silicon substrate by chemical vapor deposition. The observed electron-phonon cooling times vary from 160 ns at 2.70 K to 410 ns at 1.8 K following a T -2-dependence. The data are consistent with the values of τ eph previously reported for single-crystal boron-doped diamond films epitaxially grown on diamond substrate. Such a noticeable slow electron-phonon relaxation in boron-doped diamond, in combination with a high normal-state resistivity, confirms a potential of superconducting diamond for ultrasensitive superconducting bolometers.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1051-8223	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1168
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	Author	Gayduchenko, I.; Kardakova, A.; Fedorov, G.; Voronov, B.; Finkel, M.; Jiménez, D.; Morozov, S.; Presniakov, M.; Goltsman, G.
	Title	Response of asymmetric carbon nanotube network devices to sub-terahertz and terahertz radiation			Type	Journal Article
	Year	2015	Publication	J. Appl. Phys.	Abbreviated Journal	J. Appl. Phys.
	Volume	118	Issue	19	Pages	194303
	Keywords	terahertz detectors, asymmetric carbon nanotubes, CNT
	Abstract	Demand for efficient terahertz radiation detectors resulted in intensive study of the asymmetric carbon nanostructures as a possible solution for that problem. It was maintained that photothermoelectric effect under certain conditions results in strong response of such devices to terahertz radiation even at room temperature. In this work, we investigate different mechanisms underlying the response of asymmetric carbon nanotube (CNT) based devices to sub-terahertz and terahertz radiation. Our structures are formed with CNT networks instead of individual CNTs so that effects probed are more generic and not caused by peculiarities of an individual nanoscale object. We conclude that the DC voltage response observed in our structures is not only thermal in origin. So called diode-type response caused by asymmetry of the device IV characteristic turns out to be dominant at room temperature. Quantitative analysis provides further routes for the optimization of the device configuration, which may result in appearance of novel terahertz radiation detectors.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0021-8979	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1169
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	Author	Tretyakov, I. V.; Finkel, M. I.; Ryabchun, S. A.; Kardakova, A. I.; Seliverstov, S. V.; Petrenko, D. V.; Goltsman, G. N.
	Title	Hot-electron bolometer mixers with in situ contacts			Type	Journal Article
	Year	2014	Publication	Radiophys. Quant. Electron.	Abbreviated Journal	Radiophys. Quant. Electron.
	Volume	56	Issue	8-9	Pages	591-598
	Keywords	HEB mixers
	Abstract	We report on the latest achievements in the development of superconducting hot-electron bolometer (HEB) mixers for terahertz superheterodyne receivers. We consider application ranges of such receivers and requirements for the basic characteristics of the mixers. Main features of the mixers, such as noise temperature, gain bandwidth, noise bandwidth, and required local-oscillator power, have been improved significantly over the past few years due to intense research work, both in terms of the element fabrication quality and in terms of understanding of the physics of the processes occurring in the HEB mixers. Contacts between the superconducting bridge and the planar antenna play a key role in the mixer operation. Improvement of the quality of the contacts leads simultaneously to a decrease in the noise temperature and an increase in the gain bandwidth of a mixer.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0033-8443	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1170
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	Author	Fedorov, G.; Kardakova, A.; Gayduchenko, I.; Charayev, I.; Voronov, B.M.; Finkel, M.; Klapwijk, T.M.; Morozov, S.; Presniakov, M.; Bobrinetskiy, I.; Ibragimov, R.; Goltsman, G.
	Title	Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-terahertz radiation			Type	Journal Article
	Year	2013	Publication	Appl. Phys. Lett.	Abbreviated Journal	Appl. Phys. Lett.
	Volume	103	Issue	18	Pages	181121 (1 to 5)
	Keywords	carbon nanotubes, CNT, THz radiation, SiO2 substrate
	Abstract	We report on the voltage response of carbon nanotube devices to sub-terahertz (THz) radiation. The devices contain carbon nanotubes (CNTs), which are over their length partially suspended and partially Van der Waals bonded to a SiO2 substrate, causing a difference in thermal contact. We observe a DC voltage upon exposure to 140 GHz radiation. Based on the observed gate voltage and power dependence, at different temperatures, we argue that the observed signal is both thermal and photovoltaic. The room temperature responsivity in the microwave to THz range exceeds that of CNT based devices reported before. Authors thank Professor P. Barbara for providing the catalyst for CNT growth and Dr. N. Chumakov and V. Rylkov for stimulating discussions. The work was supported by the RFBR (Grant No. 12-02-01291-a) and by the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007). G.F. acknowledges support of the RFBR grant 12-02-01005-a.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0003-6951	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1171
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	Author	Elezov, M. S.; Semenov, A. V.; An, P. P.; Tarkhov, M. A.; Goltsman, G. N.; Kardakova, A. I.; Kazakov, A. Y.
	Title	Investigating the detection regimes of a superconducting single-photon detector			Type	Journal Article
	Year	2013	Publication	J. Opt. Technol.	Abbreviated Journal	J. Opt. Technol.
	Volume	80	Issue	7	Pages	435
	Keywords	SSPD, quantum efficiency
	Abstract	The detection regimes of a superconducting single-photon detector have been investigated. A technique is proposed for determining the regions in which “pure regimes” predominate. Based on experimental data, the dependences of the internal quantum efficiency on the bias current are determined in the one-, two-, and three-photon detection regimes.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1070-9762	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1172
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	Author	Titova, N; Kardakova, A.; Tovpeko, N; Ryabchun, S.; Mandal, S.; Morozov, D.; Klemencic, G. M.; Giblin, S.R.; Williams, O. A.; Goltsman, G. N.
	Title	Superconducting diamond films as perspective material for direct THz detectors			Type	Abstract
	Year	2017	Publication	Proc. 28^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 28^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	82
	Keywords	KID, HEB, superconducting diamond films, boron-doped diamond films, Al, TiN, Si substrates, NEP
	Abstract	Superconducting films with a high resistivity in the normal state have established themselves as the best materials for direct THz radiation sensors, such as kinetic inductance detectors (KIDs) [1] and hot electron bolometers (nano-HEBs) [2]. The primary characteristics of the future instrument such as the sensitivity and the response time are determined by the material parameters such as the electron-phonon (e-ph) interaction time, the electron density and the resistivity of the material. For direct detectors, such as KIDs and nano-HEBs, to provide a high sensitivity and low noise one prefer materials with long e-ph relaxation times and low values of the electron density. As a potential material for THz radiation detection we have studied superconducting diamond films. A significant interest to diamond for the development of electronic devices is due to the evolution of its properties with the boron dopant concentration. At a high boron doping concentration, n B ~5·10 20 cm -3 , diamond has been reported to become a superconducting with T c depending on the doping level. Our previous study of energy relaxation in single-crystalline boron-doped diamond films epitaxially grown on a diamond shows a remarkably slow energy-relaxation at low temperatures. The electron-phonon cooling time varies from 400 ns to 700 ns over the temperature range 2.2 K to 1.7 K [3]. In superconducting materials such as Al and TiN, traditionally used in KIDs, the e-ph cooling times at 1.7 K correspond to ~20 ns [4] and ~100 ns [5], correspondingly. Such a noticeable slow e-ph relaxation in boron-doped diamond, in combination with a low value of carrier density (~10 21 cm -3 ) in comparison with typical metals (~10 23 cm -3 ) and a high normal state resistivity (~1500 μΩ·cm) confirms a potential of superconducting diamond for superconducting bolometers and resonator detectors. However, the price and the small substrate growth are of single crystal diamond limit practical applications of homoepitaxial diamond films. As an alternative way with more convenient technology, one can employ heteroepitaxial diamond films grown on large-size Si substrates. Here we report about measurements of e-ph cooling times in superconducting diamond grown on silicon substrate and discuss our expectations about the applicability of boron-doped diamond films to superconducting detectors. Our estimation of limit value of noise-equivalent power (NEP) and the energy resolution of bolometer made from superconducting diamond is order 10 -17 W/Hz 1/2 at 2 K and the energy resolution is of 0.1 eV that corresponds to counting single-photon up to 15 um. The estimation was obtained by using the film thickness of 70 nm and ρ ~ 1500 μΩ·cm, and the planar dimensions that are chosen to couple bolometer with 75 Ω log-spiral antenna. Although the value of NEP is far yet from what might like to have for certain astronomical applications, we believe that it can be improved by a suitable fabrication process. Also the direct detectors, based on superconducting diamond, will offer low noise performance at about 2 K, a temperature provided by inexpensive close-cycle refrigerators, which provides another practical advantage of development and application of these devices. [1] P.K. Day, et. al, Nature, 425, 817, 2003. [2] J. Wei, et al, Nature Nanotech., 3, 496, 2008. [3] A. Kardakova, et al, Phys. Rev. B, 93, 064506, 2016. [4] P. Santhanam and D. Prober, Phys. Rev. B, 29, 3733, 1984 [5] A. Kardakova, et al, Appl. Phys. Lett, vol. 103, p. 252602, 2013.
	Address
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	Series Volume		Series Issue		Edition
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	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1173
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	Author	Seliverstov, Sergey V.; Rusova, Anastasia A.; Kaurova, Natalya S.; Voronov, Boris M.; Goltsman, Gregory N.
	Title	AC-biased superconducting NbN hot-electron bolometer for frequency-domain multiplexing			Type	Conference Article
	Year	2017	Publication	Proc. 28^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 28^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	120-122
	Keywords	NbN HEB mixer
	Abstract	We present the results of characterization of fast and sensitive superconducting antenna-coupled THz direct detector based on NbN hot-electron bolometer (HEB) with AC-bias. We discuss the possibility of implementation of the AC-bias for design the readout system from the multi-element arrays of HEBs using standard technique of frequency-domain multiplexing. We demonstrate experimentally that this approach does not lead to significant deterioration of the HEB sensitivity compared with the value obtained for the same detector with DC- bias. Results of a numerical calculations of the HEB responsivity at AC-bias are in a good agreement with the experiment.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1174
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	Author	Antipov, S.; Trifonov, A.; Krause, S.; Meledin, D.; Desmaris, V.; Belitsky, V.; Gol’tsman, G.
	Title	Gain bandwidth of NbN HEB mixers on GaN buffer layer operating at 2 THz local oscillator frequency			Type	Conference Article
	Year	2017	Publication	Proc. 28^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 28^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	147-148
	Keywords	NbN HEB mixers, GaN buffer-layer, IF bandwidth
	Abstract	In this paper, we present IF bandwidth measurement results of NbN HEB mixers, which are employing NbN thin films grown on a GaN buffer-layer. The HEB mixers were operated in the heterodyne regime at a bath temperature of approximately 4.5 K and with a local oscillator operating at a frequency of 2 THz. A quantum cascade laser served as the local oscillator and a reference synthesizer based on a BWO generator (130-160 GHz) and a semiconductor superlattice (SSL) frequency multiplier was used as a signal source. By changing the LO frequency it was possible to record the IF response or gain bandwidth of the HEB with a spectrum analyzer at the operation point, which yielded lowest noise temperature. The gain bandwidth that was recorded in the heterodyne regime at 2 THz amounts to approximately 5 GHz and coincides well with a measurement that has been performed at elevated bath temperatures and lower LO frequency of 140 GHz. These findings strongly support that by using a GaN buffer-layer the phonon escape time of NbN HEBs can be significantly lower as compared to e.g. Si substrate, thus, providing higher gain bandwidth.
	Address
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	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1175
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	Author	Elmanova, A.; An, P.; Kovalyuk, V.; Golikov, A.; Elmanov, I.; Goltsman, G.
	Title	Study of silicon nitride O-ring resonator for gas-sensing applications			Type	Conference Article
	Year	2020	Publication	J. Phys.: Conf. Ser.	Abbreviated Journal	J. Phys.: Conf. Ser.
	Volume	1695	Issue		Pages	012124
	Keywords	silicon nitride O-ring resonator, ORR
	Abstract	In this work, we experimentally studied the influence of different gaseous surroundings on silicon nitride O-ring resonator transmission. We compared the obtained results with numerical calculations and theoretical analysis and found a good agreement between them. Our results have a great potential for gas sensing applications, where a compact footprint and high efficiency are desired simultaneously.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1742-6588	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1176
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	Author	Komrakova, S.; Kovalyuk, V.; An, P.; Golikov, A.; Rybin, M.; Obraztsova, E.; Goltsman, G.
	Title	Effective absorption coefficient of a graphene atop of silicon nitride nanophotonic circuit			Type	Conference Article
	Year	2020	Publication	J. Phys.: Conf. Ser.	Abbreviated Journal	J. Phys.: Conf. Ser.
	Volume	1695	Issue		Pages	012135
	Keywords	silicon nitride O-ring resonator, ORR
	Abstract	In this paper, we demonstrate the results of a study of the optical absorption properties of graphene integrated with silicon nitride O-ring resonator. We fabricated an array of O-ring resonators with different graphene coverage area atop. By measuring the transmission spectra of nanophotonic devices with and without graphene, we calculated the effective absorption coefficient of the graphene on a rib silicon nitride waveguide.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1742-6588	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1177
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	Author	Prokhodtsov, A.; Kovalyuk, V.; An, P.; Golikov, A.; Shakhovoy, R.; Sharoglazova, V.; Udaltsov, A.; Kurochkin, Y.; Goltsman, G.
	Title	Silicon nitride Mach-Zehnder interferometer for on-chip quantum random number generation			Type	Conference Article
	Year	2020	Publication	J. Phys.: Conf. Ser.	Abbreviated Journal	J. Phys.: Conf. Ser.
	Volume	1695	Issue		Pages	012118
	Keywords	Mach-Zehnder interferometer, MZI
	Abstract	In this work, we experimentally studied silicon nitride Mach-Zehnder interferometer (MZI) with two directional couplers and 400 ps optical delay line for telecom wavelength 1550 nm. We achieved the extinction ratio in a range of 0.76-13.86 dB and system coupling losses of 28-44 dB, depending on the parameters of directional couplers. The developed interferometer is promising for the use in a compact random number generator for the needs of a fully integrated quantum cryptography system, where compact design, as well as high generation speed, are needed.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1742-6588	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1178
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	Author	Venediktov, I. O.; Elezov, M. S.; Prokhodtsov, A. I.; Kovalyuk, V. V.; An, P. P.; Golikov, A. D.; Shcherbatenko, M. L.; Sych, D. V.; Goltsman, G. N.
	Title	Study of microheater’s phase modulation for on-chip Kennedy receiver			Type	Conference Article
	Year	2020	Publication	J. Phys.: Conf. Ser.	Abbreviated Journal	J. Phys.: Conf. Ser.
	Volume	1695	Issue		Pages	012117
	Keywords	Mach-Zehnder interferometers, MZI
	Abstract	In this work we describe phase modulators for several Mach-Zehnder interferometers (MZI) on silicon nitride platform for telecomm wavelength (1550 nm). We obtained current-voltage and phase-voltage curves for these modulators. MZI are needed for experimental realisation of various quantum receivers that can distinguish weak coherent states of light with extremely low error. Thermo-optical (TO) modulation is ensured by microheaters on one of the arms of MZI, which enables the change of the refractive index of the material with temperature. This approach allows to apply the necessary voltage to the golden microheaters to obtain the required phase change. For the on-chip microheaters we demonstrate the dependence of the phase shift on the voltage applied to our on-chip microheaters.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1742-6588	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1179
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	Author	Elmanov, I.; Sardi, F.; Xia, K.; Kornher, T.; Kovalyuk, V.; Prokhodtsov, A.; An, P.; Kuzin, A.; Elmanova, A.; Goltsman, G.; Kolesov, R.
	Title	Development of focusing grating couplers for lithium niobate on insulator platform			Type	Conference Article
	Year	2020	Publication	J. Phys.: Conf. Ser.	Abbreviated Journal	J. Phys.: Conf. Ser.
	Volume	1695	Issue		Pages	012127
	Keywords	grating couplers, lithium niobat
	Abstract	In this paper, we fabricate and experimentally study focusing grating couplers for lithium niobate on an insulator photonic platform. The transmittance of a waveguide equipped with in- and out-couplers with respect to the grating period is measured with and without silicon dioxide cladding applied. Our results show the influence of silicon dioxide cladding on the efficiency and the central wavelength of grating couplers and can be used to improve grating coupling efficiency. Our study is supported by numerical simulations.
	Address
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	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1742-6588	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1180
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	Author	Zvagelsky, R. D.; Chubich, D. A.; Kolymagin, D. A.; Korostylev, E. V.; Kovalyuk, V. V.; Prokhodtsov, A. I.; Tarasov, A. V.; Goltsman, G. N.; Vitukhnovsky, A. G.
	Title	Three-dimensional polymer wire bonds on a chip: morphology and functionality			Type	Journal Article
	Year	2020	Publication	J. Phys. D: Appl. Phys.	Abbreviated Journal	J. Phys. D: Appl. Phys.
	Volume	53	Issue	35	Pages	355102
	Keywords	photonic wire bonds, PWB
	Abstract	Modern microchip-scale transceivers are capable of transmitting data at rates of the order of several terabits per second. In this regard, there is an urgent need to improve the interfaces connecting the chips and extend the bandpass of the interconnections. We use an approach combining silicon nitride nanophotonic circuits with 3D polymer waveguides fabricated by direct laser writing, which can be used as photonic interconnections or photonic wire bonds (PWB). These structures are designed, simulated, fabricated, and optimized for better light transmission at the telecommunication wavelength. An important part of this work is the study of the telecom signal transmission in a 3D polymer waveguide connecting two silicon nitride facing tapers. Two cases are considered: the tapers are one opposite the other or misaligned. Initially, the PWB shape was chosen to be Gaussian and then optimized: the top was circle-shaped and with the lower part still being Gaussian. Transmission losses were measured for both types of waveguides with different shapes. The idea of an optical multi-level crossing for photonic integrated circuits is also suggested as a solution to the problem of interconnections within a single chip.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0022-3727	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1181
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	Author	Komrakova, S.; Javadzade, J.; Vorobyov, V.; Bolshedvorskii, S.; Soshenko, V.; Akimov, A.; Kovalyuk, V.; Korneev, A.; Goltsman, G.
	Title	CMOS compatible nanoantenna-nanodiamond integration			Type	Conference Article
	Year	2019	Publication	J. Phys.: Conf. Ser.	Abbreviated Journal	J. Phys.: Conf. Ser.
	Volume	1410	Issue		Pages	012180
	Keywords	bull-eye antenna, hyperbolic metamaterials, NV-centers
	Abstract	Here we demonstrate CMOS compatible method to deterministically produce nanoantenna with nanodiamonds systems on example of bull-eye antenna on top of on hyperbolic metamaterials. We study the statistics of the placement of nanodiamonds and measure the fluorescence lifetime and the second-order correlation function of NV-centers inside nanodiamonds.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1742-6588	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1182
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	Author	Zubkova, E.; Golikov, A.; An, P.; Kovalyuk, V.; Korneev, A.; Ferrari, S.; Pernice, W.; Goltsman, G.
	Title	CWDM demultiplexer using anti-reflection, contra-directional couplers based on silicon nitride rib waveguide			Type	Conference Article
	Year	2019	Publication	J. Phys.: Conf. Ser.	Abbreviated Journal	J. Phys.: Conf. Ser.
	Volume	1410	Issue		Pages	012179
	Keywords	coarse wavelength-division multiplexing, Si3N4 rib waveguide
	Abstract	We report on the development and fabrication of a 9-channel coarse wavelength-division multiplexing for telecommunication wavelengths (1550 nm) using anti-reflection contra-directional couplers, based on silicon nitride (Si3N4) rib waveguide. The transmitted and reflected spectrum in each channel of the demultiplexer were measured. The average full width at half maximum of the transmitted (reflected) spectra is about 3 nm.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1742-6588	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1183
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	Author	Kuzin, A.; Kovalyuk, V.; Golikov, A.; Prokhodtsov, A.; Marakhin, A.; Ferrari, S.; Pernice, W.; Gippius, N.; Goltsman, G.
	Title	Efficiency of focusing grating couplers versus taper length and angle			Type	Conference Article
	Year	2019	Publication	J. Phys.: Conf. Ser.	Abbreviated Journal	J. Phys.: Conf. Ser.
	Volume	1410	Issue		Pages	012181
	Keywords	focusing grating coupler
	Abstract	Here we experimentally studied dependence of a focusing grating coupler efficiency versus taper length and angle on silicon nitride platform. As a result, we obtained a dependence for the efficiency of a focusing grating coupler on the parameters of the taper length and angle.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1742-6588	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1184
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	Author	Ferrari, S.; Kovalyuk, V.; Vetter, A.; Lee, C.; Rockstuhl, C.; Semenov, A.; Gol'tsman, G.; Pernice, W.
	Title	Analysis of the detection response of waveguide-integrated superconducting nanowire single-photon detectors at high count rate			Type	Journal Article
	Year	2019	Publication	Appl. Phys. Lett.	Abbreviated Journal	Appl. Phys. Lett.
	Volume	115	Issue	10	Pages	101104
	Keywords	SSPD, SNSPD, waveguide
	Abstract	Nanophotonic circuitry and superconducting nanowires have been successfully combined for detecting single photons, propagating in an integrated photonic circuit, with high efficiency and low noise and timing uncertainty. Waveguide-integrated superconducting nanowire single-photon detectors (SNSPDs) can nowadays be engineered to achieve subnanosecond recovery times and can potentially be adopted for applications requiring Gcps count rates. However, particular attention shall be paid to such an extreme count rate regime since artifacts in the detector functionality emerge. In particular, a count-rate dependent detection efficiency has been encountered that can compromise the accuracy of quantum detector tomography experiments. Here, we investigate the response of waveguide-integrated SNSPDs at high photon flux and identify the presence of parasitic currents due to the accumulation of charge in the readout electronics to cause the above-mentioned artifact in the detection efficiency. Our approach allows us to determine the maximum photon count rate at which the detector can be operated without adverse effects. Our findings are particularly important to avoid artifacts when applying SNSPDs for quantum tomography. We acknowledge support through ERC Consolidator Grant No. 724707 and from the Deutsche Forschungsgemeinschaft through Project No. PE 1832/5-1,2, as well as funding by the Volkswagen Foundation. This project has received funding from the European Union's Horizon 2020 research and innovation program under the Marie Skłodowska-Curie Grant Agreement No. 675745. V.K. and G.G. acknowledge support from the Russian Science Foundation Project No. 16-12-00045 (NbN film deposition and testing). A.V. acknowledges support from the Karlsruhe School of Optics and Photonics (KSOP).
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0003-6951	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1185
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	Author	Bakhvalova, T.; Belkin, M. E.; Kovalyuk, V. V.; Prokhodtcov, A. I.; Goltsman, G. N.; Sigov, A. S.
	Title	Studying key principles for design and fabrication of silicon photonic-based beamforming networks			Type	Conference Article
	Year	2019	Publication	PIERS-Spring	Abbreviated Journal	PIERS-Spring
	Volume		Issue		Pages	745-751
	Keywords	silicon photonics, TriPleX platform
	Abstract	In the paper, we address key principles for computer-aided design and fabrication of silicon-photonics-based optical beamforming network selecting the optimal approach by simulation and experimental results. To clarify the consideration, the study is conducted on the example of a widely used binary switchable silicon-nitride optical beamforming network based on TriPleX platform. Comparison of simulation results and experimental studies of the prototype shows that the relative error due to technological imperfections does not exceed 3%. According to the estimation, such an error introduces insignificant distortion in the radiation pattern of the referred antenna array.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	9017646			Serial	1186
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	Author	Polyakova, M.; Semenov, A. V.; Kovalyuk, V.; Ferrari, S.; Pernice, W. H. P.; Gol'tsman, G. N.
	Title	Protocol of measuring hot-spot correlation length for SNSPDs with near-unity detection efficiency			Type	Journal Article
	Year	2019	Publication	IEEE Trans. Appl. Supercond.	Abbreviated Journal	IEEE Trans. Appl. Supercond.
	Volume	29	Issue	5	Pages	1-5
	Keywords	SSPD, waveguide-integrated SNSPD, hot-spot interaction length
	Abstract	We present a simple quantum detector tomography protocol, which allows, without ambiguities, to measure the two-spot detection efficiency and extract the hot-spot interaction length of superconducting nanowire single photon detectors (SNSPDs) with unity intrinsic detection efficiency. We identify a significant parasitic contribution to the measured two-spot efficiency, related to an effect of the bias circuit, and find a way to rule out this contribution during data post-processing and directly in the experiment. From the data analysis for waveguide-integrated SNSPD, we find signatures of the saturation of the two-spot efficiency and hot-spot interaction length of order of 100 nm.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1051-8223	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1187
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	Author	Prokhodtsov, A.; Golikov, A.; An, P.; Kovalyuk, V.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A.
	Title	Effect of silicon oxide coating on a silicon nitride focusing grating coupler efficiency			Type	Conference Article
	Year	2019	Publication	EPJ Web Conf.	Abbreviated Journal	EPJ Web Conf.
	Volume	220	Issue		Pages	02009
	Keywords	grating coupler, SiO2
	Abstract	The dependence of the efficiency of the focusing grating couplers on the period and filling factor before and after deposition of the upper silicon oxide layer was experimentally studied. The obtained data are of practical importance for tunable integrated-optical devices based on silicon nitride platform.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2100-014X	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1188
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	Author	Elmanov, I.; Elmanova, A.; Komrakova, S.; Golikov, A.; Kaurova, N.; Kovalyuk, V.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A.
	Title	Method for determination of resists parameters for photonic – integrated circuits e-beam lithography on silicon nitride platform			Type	Conference Article
	Year	2019	Publication	EPJ Web Conf.	Abbreviated Journal	EPJ Web Conf.
	Volume	220	Issue		Pages	03012
	Keywords	e-beam lithography, Si3N4
	Abstract	In the work the thicknesses of the e-beam resists ZEP 520A and ma-N 2400 by using non-destructive method were measured, as well as recipe for the high ratio between the Si3N4 and the resists etching rate was determined. The work has a practical application for e-beam lithography of photonic-integrated circuits and nanophotonics devices based on silicon nitride platform.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2100-014X	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1189
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	Author	Elmanova, A.; Elmanov, I.; Komrakova, S.; Golikov, A.; Javadzade, J.; Vorobyev, V.; Bolshedvorskii, S.; Soshenko, V.; Akimov, A.; Kovalyuk, V.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A.
	Title	Integration of nanodiamonds with NV-centers on optical silicon nitride structures			Type	Conference Article
	Year	2019	Publication	EPJ Web Conf.	Abbreviated Journal	EPJ Web Conf.
	Volume	220	Issue		Pages	03013
	Keywords	nanodiamonds, NV-centers, Si3N4
	Abstract	In this work we had developed optical structures from silicon nitride for further integration of the nanodiamonds containing NV-centers with them. We have introduced method of the nanodiamonds solution application on the substrates. The work has practical meaning in nanophotonics sphere and in development of optical devices with single-photon sources.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2100-014X	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1190
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	Author	An, P.; Kovalyuk, V.; Golikov, A.; Zubkova, E.; Ferrari, S.; Korneev, A.; Pernice, W.; Goltsman, G.
	Title	Experimental optimisation of O-ring resonator Q-factor for on-chip spontaneous four wave mixing			Type	Conference Article
	Year	2018	Publication	J. Phys.: Conf. Ser.	Abbreviated Journal	J. Phys.: Conf. Ser.
	Volume	1124	Issue		Pages	051047
	Keywords	planar O-ring resonators, Q-factor
	Abstract	In this paper we experimentally studied the influence of geometrical parameters of the planar O-ring resonators on its Q-factor and losses. We systematically changed the gap between the bus waveguide and the ring, as well as the width of the ring. We found the highest Q = 5×105 for gap 2.0 μm and the ring width 2 μm. This work is important for further on-chip SFWM applications since the generation rate of the biphoton field strongly depends on the quality factor as Q3
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1742-6588	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1191
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	Author	Golikov, A.; Kovalyuk, V.; An, P.; Zubkova, E.; Ferrari, S.; Pernice, W.; Korneev, A.; Goltsman, G.
	Title	Silicon nitride nanophotonic circuit for on-chip spontaneous four-wave mixing			Type	Conference Article
	Year	2018	Publication	J. Phys.: Conf. Ser.	Abbreviated Journal	J. Phys.: Conf. Ser.
	Volume	1124	Issue		Pages	051051
	Keywords	O-ring resonator
	Abstract	Here we present an integrated nanophotonic circuit for on-chip spontaneous four-wave mixing. The fabricated device includes an O-ring resonator, a Bragg noch-filter as well as a nine-channel arrayed waveguide gratings (AWG) operated in the C-band wavelength range (1550 nm). The measured optical losses of the device (-6.8 dB) as well as a high Q-factor (> 1.2×105) shows a good potential for realizing the spontaneous four-wave mixing on the silicon nitride chip.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1742-6588	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1193
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	Author	Smirnov, E.; Golikov, A.; Zolotov, P.; Kovalyuk, V.; Lobino, M.; Voronov, B.; Korneev, A.; Goltsman, G.
	Title	Superconducting nanowire single-photon detector on lithium niobate			Type	Conference Article
	Year	2018	Publication	J. Phys.: Conf. Ser.	Abbreviated Journal	J. Phys.: Conf. Ser.
	Volume	1124	Issue		Pages	051025
	Keywords	SSPD, SNSPD, lithium niobate, LN
	Abstract	We demonstrate superconducting niobium nitride nanowires folded on top of lithium niobate substrate. We report of 6% system detection efficiency at 20 s−1 dark count rate at telecommunication wavelength (1550 nm). Our results shown great potential for the use of NbN nanowires in the field of linear and nonlinear integrated quantum photonics.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1742-6588	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1194
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	Author	Zubkova, E.; An, P.; Kovalyuk, V.; Korneev, A.; Ferrari, S.; Pernice, W.; Goltsman, G.
	Title	Optimization of contra-directional coupler based on silicon nitride Bragg rib waveguide			Type	Conference Article
	Year	2018	Publication	J. Phys.: Conf. Ser.	Abbreviated Journal	J. Phys.: Conf. Ser.
	Volume	1124	Issue		Pages	051048
	Keywords	Bragg waveguide, Si3N4
	Abstract	We report on the development and fabrication of a contra-directional coupler based on the Bragg waveguide on Si3N4 platform. Transmitted and reflected by the contra-directional coupler spectra were measured. The reflected spectra exactly matches the one notched by the main channel of the coupler. Losses are about 3dB, coupling to the directing branch of the coupler is practically lossless. FWHM of the transmitted (reflected) spectra is 3.46 nm.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1742-6588	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1195
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	Author	Prokhodtsov, A.; An, P.; Kovalyuk, V.; Zubkova, E.; Golikov, A.; Korneev, A.; Ferrari, S.; Pernice, W.; Goltsman, G.
	Title	Optimization of on-chip photonic delay lines for telecom wavelengths			Type	Conference Article
	Year	2018	Publication	J. Phys.: Conf. Ser.	Abbreviated Journal	J. Phys.: Conf. Ser.
	Volume	1124	Issue		Pages	051052
	Keywords	optical delay lines
	Abstract	In this work, we experimentally studied optical delay lines on silicon nitride platform for telecomm wavelength (1550 nm). We modeled the group delay time and fabricated spiral optical delay lines with different waveguide widths and radii as well as measured their transmission. For the half etched rib waveguides we achieved the losses in the range of 3 dB/cm.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1742-6588	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1196
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	Author	Kovalyuk, V.; Kahl, O.; Ferrari, S.; Vetter, A.; Lewes-Malandrakis, G.; Nebel, C.; Korneev, A.; Goltsman, G.; Pernice, W.
	Title	On-chip single-photon spectrometer for visible and infrared wavelength range			Type	Conference Article
	Year	2018	Publication	J. Phys.: Conf. Ser.	Abbreviated Journal	J. Phys.: Conf. Ser.
	Volume	1124	Issue		Pages	051045
	Keywords	single-photon spectrometer
	Abstract	Here we show our latest progress in the field of a single-photon spectrometer for the visible and infrared wavelengths ranges implementation. We consider three different on-chip approaches: a coherent spectrometer with a low power of the heterodyne, a coherent spectrometer with a high power of the heterodyne, and an eight-channel single-photon spectrometer for direct detection. Along with high efficiency, spectrometers show high detection efficiency and temporal resolution through the use of waveguide integrated superconducting nanowire single-photon detectors.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1742-6588	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1197
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	Author	Korneev, A.; Kovalyuk, V.; An, P.; Golikov, A.; Zubkova, E.; Ferrari, S.; Kahl, O.; Pernice, W.; Goltsman, G.; Naumov, A. V.; Gladush, M. G.; Karimullin, K. R.
	Title	Superconducting single-photon detector for integrated waveguide spectrometer			Type	Conference Article
	Year	2018	Publication	EPJ Web Conf.	Abbreviated Journal	EPJ Web Conf.
	Volume	190	Issue		Pages	04009
	Keywords	SSPD, SNSPD, Si3N4 waveguides, waveguide spectrometer
	Abstract	We present our recent achievements in the development of an on-chip spectrometer consisting of arrayed waveguide grating made of Si3N4 waveguides and NbN superconducting single-photon detector.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2100-014X	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1199
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	Author	Korneev, A.; Kovalyuk, V.; Ferrari, S.; Kahl, O.; Pernice, W.; An, P.; Golikov, A.; Zubkova, E.; Goltsman, G.
	Title	Superconducting Single-Photon Detectors for Integrated Nanophotonics Circuits			Type	Conference Article
	Year	2017	Publication	16th ISEC	Abbreviated Journal	16th ISEC
	Volume		Issue		Pages	1-3
	Keywords	SSPD, SNSPD
	Abstract	We present an overview of our recent achievements in integration of superconducting nanowire single-photon detectors SNSPD with dielectric optical waveguides. We are able to produce complex nanophotonics integrated circuits containing optical elements and photon detector on single chip thus producing a compact integrated platform for quantum optics applications.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	8314200			Serial	1200
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	Author	Shcherbatenko, M.; Lobanov, Y.; Semenov, A.; Kovalyuk, V.; Korneev, A.; Ozhegov, R.; Kaurova, N.; Voronov, B.; Goltsman, G.
	Title	Coherent detection of weak signals with superconducting nanowire single photon detector at the telecommunication wavelength			Type	Conference Article
	Year	2017	Publication	Proc. SPIE	Abbreviated Journal	Proc. SPIE
	Volume	10229	Issue		Pages	0G (1 to 12)
	Keywords	SSPD mixer, SNSPD, coherent detection, weak signal detection, superconducting nanostructures
	Abstract	Achievement of the ultimate sensitivity along with a high spectral resolution is one of the frequently addressed problems, as the complication of the applied and fundamental scientific tasks being explored is growing up gradually. In our work, we have investigated performance of a superconducting nanowire photon-counting detector operating in the coherent mode for detection of weak signals at the telecommunication wavelength. Quantum-noise limited sensitivity of the detector was ensured by the nature of the photon-counting detection and restricted by the quantum efficiency of the detector only. Spectral resolution given by the heterodyne technique and was defined by the linewidth and stability of the Local Oscillator (LO). Response bandwidth was found to coincide with the detector’s pulse width, which, in turn, could be controlled by the nanowire length. In addition, the system noise bandwidth was shown to be governed by the electronics/lab equipment, and the detector noise bandwidth is predicted to depend on its jitter. As have been demonstrated, a very small amount of the LO power (of the order of a few picowatts down to hundreds of femtowatts) was required for sufficient detection of the test signal, and eventual optimization could lead to further reduction of the LO power required, which would perfectly suit for the foreseen development of receiver matrices and the need for detection of ultra-low signals at a level of less-than-one-photon per second.
	Address
	Corporate Author				Thesis
	Publisher	Spie	Place of Publication		Editor	Prochazka, I.; Sobolewski, R.; James, R.B.
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference	Photon counting applications
	Notes				Approved	no
	Call Number	10.1117/12.2267724			Serial	1201
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	Author	Krause, S.; Mityashkin, V.; Antipov, S.; Gol'tsman, G.; Meledin, D.; Desmaris, V.; Belitsky, V.; Rudzinski, M.
	Title	Study of IF bandwidth of NbN hot electron bolometers on GaN buffer layer using a direct measurement method			Type	Conference Article
	Year	2016	Publication	Proc. 27^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal
	Volume		Issue		Pages	30-32
	Keywords	NbN HEB, GaN buffer layer
	Abstract	In this paper, we present a reliable measurement method to study the influence of the GaN buffer layer on phonon-escape time in comparison with commonly used Si substrates and, in consequence, on the IF bandwidth of HEBs. One of the key aspects is to operate the HEB mixer at elevated bath temperatures close to the critical temperature of the NbN ultra-thin film, where contributions from electron-phonon processes and self-heating effects are relatively small, therefore IF roll-off will be governed by the phonon-escape.Two independent experiments were performed at GARD and MSPU on a similar experimental setup at frequencies of approximately 180 and 140 GHz, respectively, and have shown reproducible and consistent results. The entire IF chain was characterized by S-parameter measurements. We compared the measurement results of epitaxial NbN grown onto GaN buffer-layer with Tc of 12.5 K (4.5nm) with high quality polycrystalline NbN films on Si substrate with Tc of 10.5K (5nm) and observed a strong indication of an enhancement of phonon escape to the substrate by a factor of two for the NbN/GaN material combination.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1202
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	Author	Shcherbatenko, M.; Lobanov, Y.; Kovalyuk, V.; Korneev, A.; Gol'tsman, G. N.
	Title	Photon counting detector as a mixer with picowatt local oscillator power requirement			Type	Conference Article
	Year	2016	Publication	Proc. 27^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 27^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	110
	Keywords	SSPD mixer, SNSPD
	Abstract	At the current stage of the heterodyne receiver technology, great attention is paid to the development of detector arrays and matrices comprising many detectors on a single wafer. However, any traditional THz detector (such as SIS, HEB, or Schottky diode) requires quite a noticeable amount of Local Oscillator (LO) power which scales with the matrix size, and the total amount of the LO power needed is much greater than that available from compact and handy solid state sources. Substantial reduction of the LO power requirement may be obtained with a photon-counting detector used as a mixer. This approach, mentioned earlier in [1,2] provides a number of advantages. Thus, sensitivity of such a detector would be at the quantum limit (because of the photon-counting nature of the detector) and just a few LO photons for the mixing would be required leading to a possible breakthrough in the matrix receiver development. In addition, the receiver could be easily tuned from the heterodyne to the direct detection mode without any loss in its sensitivity with the latter limited only by the quantum efficiency of the detector used. We demonstrate such a technique with the use of the Superconducting Nanowire Single Photon Detector(SNSPD)[3] irradiated by both 1.5 μm LO with a tiny amount of power (from a few picowatts down to femtowatts) facing the detector, and the test signal with a power significantly less than that of the LO. The SNSPD was operated in the current mode and the bias current was slightly below its critical value. Irradiating the detector with either the LO or the signal source produced voltage pulses which are statistically evenly distributed and could be easily counted by a lab counter or oscilloscope. Irradiating the detector by the both lasers simultaneously produced pulses at the frequency f m which is the exact difference between the frequencies at which the two lasers operate. f m could be deduced form either counts statistics integrated over a sufficient time interval or with the help of an RF spectrum analyzer. In addition to the chip SNSPD with normal incidence coupling, we use the detectors with a travelling wave geometry design [4]. In this case a niobium nitride nanowire is placed on the top of a nanophotonic waveguide, thus increasing the efficient interaction length. Integrated device scheme allows us to measure the optical losses with high accuracy. Our approach is fully scalable and, along with a large number of devices integrated on a single chip can be adapted to the mid and far IR ranges. This work was supported in part by the Ministry of Education and Science of the Russian Federation, contract no. 14.B25.31.0007 and by RFBR grant # 16-32-00465. 1. Leaf A. Jiang and Jane X. Luu, ―Heterodyne detection with a weak local oscillator, Applied Optics Vol. 47, Issue 10, pp. 1486-1503 (2008) 2. Matsuo H. ―Requirements on Photon Counting Detectors for Terahertz Interferometry J Low Temp Phys (2012) 167:840–845 3. A. Semenov, G. Gol'tsman, A. Korneev, “Quantum detection by current carrying superconducting film”, Physica C, 352, pp. 349-356 (2001) 4. O. Kahl, S. Ferrari, V. Kovalyuk, G. N. Goltsman, A. Korneev, and W. H. P. Pernice, ―Waveguide integrated superconducting single-photon detectors with high internal quantum efficiency at telecom wavelengths., Sci. Rep., vol. 5, p. 10941, (2015).
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	Notes				Approved	no
	Call Number				Serial	1203
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	Author	Trifonov, A.; Tong, C.-Y. E.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G.
	Title	Gap frequency and photon absorption in a hot electron bolometer			Type	Conference Article
	Year	2016	Publication	Proc. 27^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 27^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	121
	Keywords	NbN HEB; Si membrane
	Abstract	The superconducting energy gap is a crucial parameter of a superconductor when used in mixing applications. In the case of the SIS mixer, the mixing process is efficient for frequencies below the energy gap, whereas, in the case of the HEB mixer, the mixing process is most efficient at frequencies above the gap, where photon absorption takes place more readily. We have investigated the photon absorption phenomenon around the gap frequency of HEB mixers based on NbN films deposited on silicon membranes. Apart from studying the pumped I-V curves of HEB devices, we have also probed them with microwave radiation, as previously described [1]. At frequencies far below the gap frequency, the pumped I-V curves show abrupt switching between the superconducting and resistive states. For the NbN HEB mixers we tested, which have critical temperatures of ~9 K, this is true for frequencies below about 400 GHz. As the pump frequency is increased beyond 400 GHz, the resistive state extends towards zero bias and at some point a small region of negative differential resistance appears close to zero bias. In this region, the microwave probe reveals that the device impedance is changing randomly with time. As the pump frequency is further increased, this random impedance change develops into relaxation oscillations, which can be observed by the demodulation of the reflected microwave probe. Initially, these oscillations take the form of several frequencies grouped together under an envelope. As we approach the gap frequency, the multiple frequency relaxation oscillations coalesce into a single frequency of a few MHz. The resultant square-wave nature of the oscillation is a clear indication that the device is in a bi-stable state, switching between the superconducting and normal state. Above the gap frequency, it is possible to obtain a pumped I-V curve with no negative differential resistance above a threshold pumping level. Below this pumping level, the device demonstrates bi-stability, and regular relaxation oscillation at a few MHz is observed as a function of pump power. The threshold pumping level is clearly related to the amount of power absorbed by the device and its phonon cooling. From the above experiment, we can derive the gap frequency of the NbN film, which is 585 GHz for our 6 μm thin silicon membrane-based device. We also confirm that the HEB mixer is not an efficient photon absorber for radiation below the gap frequency. 1. A. Trifonov et al., “Probing the stability of HEB mixers with microwave injection”, IEEE Trans. Appl. Supercond., vol. 25, no. 3, June 2015.
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	Notes				Approved	no
	Call Number				Serial	1204
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	Author	Lobanov, Y. V.; Shcherbatenko, M. L.; Semenov, A. V.; Kovalyuk, V. V.; Korneev, A. A.; Goltsman, G. N.; Vinogradov, E. A.; Naumov, A. V.; Gladush, M. G.; Karimullin, K. R.
	Title	Heterodyne spectroscopy with superconducting single-photon detector			Type	Conference Article
	Year	2017	Publication	EPJ Web Conf.	Abbreviated Journal	EPJ Web Conf.
	Volume	132	Issue		Pages	01005
	Keywords	SSPD mixer, SNSPD
	Abstract	We demonstrate successful operation of a Superconducting Single Photon Detector (SSPD) as the core element in a heterodyne receiver. Irradiating the SSPD by both a local oscillator power and signal power simultaneously, we observed beat signal at the intermediate frequency of a few MHz. Gain bandwidth was found to coincide with the detector single pulse width, where the latter depends on the detector kinetic inductance, determined by the superconducting nanowire length.
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	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
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	Series Volume		Series Issue		Edition
	ISSN	2100-014X	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1205
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	Author	Lobanov, Y.; Shcherbatenko, M.; Semenov, A.; Kovalyuk, V.; Kahl, O.; Ferrari, S.; Korneev, A.; Ozhegov, R.; Kaurova, N.; Voronov, B. M.; Pernice, W. H. P.; Gol'tsman, G. N.
	Title	Superconducting nanowire single photon detector for coherent detection of weak signals			Type	Journal Article
	Year	2017	Publication	IEEE Trans. Appl. Supercond.	Abbreviated Journal	IEEE Trans. Appl. Supercond.
	Volume	27	Issue	4	Pages	1-5
	Keywords	NbN SSPD mixer, SNSPD, nanophotonic waveguide
	Abstract	Traditional photon detectors are operated in the direct detection mode, counting incident photons with a known quantum efficiency. Here, we have investigated a superconducting nanowire single photon detector (SNSPD) operated as a photon counting mixer at telecommunication wavelength around 1.5 μm. This regime of operation combines excellent sensitivity of a photon counting detector with excellent spectral resolution given by the heterodyne technique. Advantageously, we have found that low local oscillator (LO) power of the order of hundreds of femtowatts to a few picowatts is sufficient for clear observation of the incident test signal with the sensitivity approaching the quantum limit. With further optimization, the required LO power could be significantly reduced, which is promising for many practical applications, such as the development of receiver matrices or recording ultralow signals at a level of less-than-one-photon per second. In addition to a traditional NbN-based SNSPD operated with normal incidence coupling, we also use detectors with a travelling wave geometry, where a NbN nanowire is placed on the top of a Si 3 N 4 nanophotonic waveguide. This approach is fully scalable and a large number of devices could be integrated on a single chip.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
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	Series Volume		Series Issue		Edition
	ISSN	1051-8223	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1206
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	Author	Shcherbatenko, M.; Lobanov, Y.; Semenov, A.; Kovalyuk, V.; Korneev, A.; Ozhegov, R.; Kazakov, A.; Voronov, B.M.; Goltsman, G.N.
	Title	Potential of a superconducting photon counter for heterodyne detection at the telecommunication wavelength			Type	Journal Article
	Year	2016	Publication	Opt. Express	Abbreviated Journal	Opt. Express
	Volume	24	Issue	26	Pages	30474-30484
	Keywords	NbN SSPD mixer, SNSPD
	Abstract	Here, we report on the successful operation of a NbN thin film superconducting nanowire single-photon detector (SNSPD) in a coherent mode (as a mixer) at the telecommunication wavelength of 1550 nm. Providing the local oscillator power of the order of a few picowatts, we were practically able to reach the quantum noise limited sensitivity. The intermediate frequency gain bandwidth (also referred to as response or conversion bandwidth) was limited by the spectral band of a single-photon response pulse of the detector, which is proportional to the detector size. We observed a gain bandwidth of 65 MHz and 140 MHz for 7 x 7 microm² and 3 x 3 microm² devices, respectively. A tiny amount of the required local oscillator power and wide gain and noise bandwidths, along with unnecessary low noise amplification, make this technology prominent for various applications, with the possibility for future development of a photon counting heterodyne-born large-scale array.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	English	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1094-4087	ISBN		Medium
	Area		Expedition		Conference
	Notes	PMID:28059394			Approved	no
	Call Number				Serial	1207
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	Author	Vetter, A.; Ferrari, S.; Rath, P.; Alaee, R.; Kahl, O.; Kovalyuk, V.; Diewald, S.; Goltsman, G. N.; Korneev, A.; Rockstuhl, C.; Pernice, W. H. P.
	Title	Cavity-enhanced and ultrafast superconducting single-photon detectors			Type	Journal Article
	Year	2016	Publication	Nano Lett.	Abbreviated Journal	Nano Lett.
	Volume	16	Issue	11	Pages	7085-7092
	Keywords	SSPD; SNSPD; multiphoton detection; nanophotonic circuit; photonic crystal cavity
	Abstract	Ultrafast single-photon detectors with high efficiency are of utmost importance for many applications in the context of integrated quantum photonic circuits. Detectors based on superconductor nanowires attached to optical waveguides are particularly appealing for this purpose. However, their speed is limited because the required high absorption efficiency necessitates long nanowires deposited on top of the waveguide. This enhances the kinetic inductance and makes the detectors slow. Here, we solve this problem by aligning the nanowire, contrary to usual choice, perpendicular to the waveguide to realize devices with a length below 1 mum. By integrating the nanowire into a photonic crystal cavity, we recover high absorption efficiency, thus enhancing the detection efficiency by more than an order of magnitude. Our cavity enhanced superconducting nanowire detectors are fully embedded in silicon nanophotonic circuits and efficiently detect single photons at telecom wavelengths. The detectors possess subnanosecond decay ( approximately 120 ps) and recovery times ( approximately 510 ps) and thus show potential for GHz count rates at low timing jitter ( approximately 32 ps). The small absorption volume allows efficient threshold multiphoton detection.
	Address	Institute of Physics, University of Munster , 48149 Munster, Germany
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	English	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1530-6984	ISBN		Medium
	Area		Expedition		Conference
	Notes	PMID:27759401			Approved	no
	Call Number				Serial	1208
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	Author	Rath, P.; Vetter, A.; Kovalyuk, V.; Ferrari, S.; Kahl, O.; Nebel, C.; Goltsman, G. N.; Korneev, A.; Pernice, W. H. P.
	Title	Travelling-wave single-photon detectors integrated with diamond photonic circuits: operation at visible and telecom wavelengths with a timing jitter down to 23 ps			Type	Conference Article
	Year	2016	Publication	Integrated Optics: Devices, Mat. Technol. XX	Abbreviated Journal	Integrated Optics: Devices, Mat. Technol. XX
	Volume	9750	Issue		Pages	135-142
	Keywords	SSPD, Superconducting Nanowire Single-Photon Detector, SNSPD, Single Photon Detector, Diamond Photonics, Diamond Integrated Optics, Diamond Waveguides, Integrated Optics, Low Timing Jitter
	Abstract	We report on the design, fabrication and measurement of travelling-wave superconducting nanowire single-photon detectors (SNSPDs) integrated with polycrystalline diamond photonic circuits. We analyze their performance both in the near-infrared wavelength regime around 1600 nm and at 765 nm. Near-IR detection is important for compatibility with the telecommunication infrastructure, while operation in the visible wavelength range is relevant for compatibility with the emission line of silicon vacancy centers in diamond which can be used as efficient single-photon sources. Our detectors feature high critical currents (up to 31 μA) and high performance in terms of efficiency (up to 74% at 765 nm), noise-equivalent power (down to 4.4×10-19 W/Hz1/2 at 765 nm) and timing jitter (down to 23 ps).
	Address
	Corporate Author				Thesis
	Publisher	Spie	Place of Publication		Editor	Broquin, J.-E.; Conti, G.N.
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1210
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	Author	Ferrari, S.; Kahl, O.; Kovalyuk, V.; Goltsman, G. N.; Korneev, A.; Pernice, W. H. P.
	Title	Waveguide-integrated single- and multi-photon detection at telecom wavelengths using superconducting nanowires			Type	Journal Article
	Year	2015	Publication	Appl. Phys. Lett.	Abbreviated Journal	Appl. Phys. Lett.
	Volume	106	Issue	15	Pages	151101 (1 to 5)
	Keywords	SSPD, SNSPD
	Abstract	We investigate single- and multi-photon detection regimes of superconducting nanowire detectors embedded in silicon nitride nanophotonic circuits. At near-infrared wavelengths, simultaneous detection of up to three photons is observed for 120 nm wide nanowires biased far from the critical current, while narrow nanowires below 100 nm provide efficient single photon detection. A theoretical model is proposed to determine the different detection regimes and to calculate the corresponding internal quantum efficiency. The predicted saturation of the internal quantum efficiency in the single photon regime agrees well with plateau behavior observed at high bias currents. W. H. P. Pernice acknowledges support by the DFG Grant Nos. PE 1832/1-1 and PE 1832/1-2 and the Helmholtz society through Grant No. HIRG-0005. The Ph.D. education of O. Kahl is embedded in the Karlsruhe School of Optics and Photonics (KSOP). G. N. Goltsman acknowledges support by Russian Federation President Grant HШ-1918.2014.2 and Ministry of Education and Science of the Russian Federation Contract No.: RFMEFI58614X0007. A. Korneev acknowledges support by Statement Task No. 3.1846.2014/k. V. Kovalyuk acknowledges support by Statement Task No. 2327. We also acknowledge support by the Deutsche Forschungsgemeinschaft (DFG) and the State of Baden-Württemberg through the DFG-Center for Functional Nanostructures (CFN) within subproject A6.4. We thank S. Kühn and S. Diewald for the help with device fabrication as well as B. Voronov and A. Shishkin for help with NbN thin film deposition and A. Semenov for helpful discussion about the detection mechanism of nanowire SSPD's. The authors declare no competing financial interests.
	Address
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	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0003-6951	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1211
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	Author	Kovalyuk, V.; Hartmann, W.; Kahl, O.; Kaurova, N.; Korneev, A.; Goltsman, G.; Pernice, W. H. P.
	Title	Absorption engineering of NbN nanowires deposited on silicon nitride nanophotonic circuits			Type	Journal Article
	Year	2013	Publication	Opt. Express	Abbreviated Journal	Opt. Express
	Volume	21	Issue	19	Pages	22683-22692
	Keywords	SSPD, SNSPD, NbN nanoeires, Si3N4 waveguides
	Abstract	We investigate the absorption properties of U-shaped niobium nitride (NbN) nanowires atop nanophotonic circuits. Nanowires as narrow as 20nm are realized in direct contact with Si3N4 waveguides and their absorption properties are extracted through balanced measurements. We perform a full characterization of the absorption coefficient in dependence of length, width and separation of the fabricated nanowires, as well as for waveguides with different cross-section and etch depth. Our results show excellent agreement with finite-element analysis simulations for all considered parameters. The experimental data thus allows for optimizing absorption properties of emerging single-photon detectors co-integrated with telecom wavelength optical circuits.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1094-4087	ISBN		Medium
	Area		Expedition		Conference
	Notes	PMID:24104155			Approved	no
	Call Number				Serial	1213
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	Author	Rasulova, G. K.; Brunkov, P. N.; Pentin, I. V.; Kovalyuk, V. V.; Gorshkov, K. N.; Kazakov, A. Y.; Ivanov, S. Y.; Egorov, A. Y.; Sakseev, D. A.; Konnikov, S. G.
	Title	Mutual synchronization of two coupled self-oscillators based on GaAs/AlGaAs superlattices			Type	Journal Article
	Year	2011	Publication	Tech. Phys.	Abbreviated Journal	Tech. Phys.
	Volume	56	Issue	6	Pages	826-830
	Keywords	GaAs/AlGaAs superlattices
	Abstract	The interaction of self-oscillators based on 30-period weakly coupled GaAs/AlGaAs superlattices is studied. The action of one self-oscillator on the other was observed for a constant bias voltage in the absence of generation of self-sustained oscillations in one of the oscillators. It is shown that induced oscillations in a forced oscillator appear due to excitation of oscillations in the system of coupled oscillators forming the electric-field domain wall at the frequency of one of the higher harmonics of a forcing oscillation.
	Address
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	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1063-7842	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1214
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	Author	Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Goltsman, G. N.; Verevkin, A. A.; Toropov, A. I.; Mauskopf, P.
	Title	Concentration dependence of energy relaxation time in AlGaAs/GaAs heterojunctions: direct measurements			Type	Journal Article
	Year	2011	Publication	Semicond. Sci. Technol.	Abbreviated Journal	Semicond. Sci. Technol.
	Volume	26	Issue	2	Pages	025013
	Keywords	AlGaAs/GaAs heterojunctions
	Abstract	We present measurements of the energy relaxation time, τε, of electrons in a single heterojunction in a quasi-equilibrium state using microwave time-resolved spectroscopy at 4.2 K. We find the relaxation time has a power-law dependence on the carrier density of the two-dimensional electron gas, τε∝nγs with γ = 0.40 ± 0.02 for values of the carrier density, ns, from 1.6 × 1011 to 6.6 × 1011cm−2. The results are in good agreement with predictions taking into account the scattering of the carriers by both piezoelectric and deformation potential acoustic phonons. We compare these results with indirect measurements of the energy relaxation time from energy loss measurements involving Joule heating of the electron gas.
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	Series Volume		Series Issue		Edition
	ISSN	0268-1242	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1215
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	Author	Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I.
	Title	Frequency bandwidth and conversion loss of a semiconductor heterodyne receiver with phonon cooling of two-dimensional electrons			Type	Journal Article
	Year	2010	Publication	Semicond.	Abbreviated Journal	Semicond.
	Volume	44	Issue	11	Pages	1427-1429
	Keywords	2DEG, AlGaAs/GaAs heterostructures mixers
	Abstract	The temperature and concentration dependences of the frequency bandwidth of terahertz heterodyne AlGaAs/GaAs detectors based on hot electron phenomena with phonon cooling of two-dimensional electrons have been measured by submillimeter spectroscopy with a high time resolution. At a temperature of 4.2 K, the frequency bandwidth at a level of 3 dB (f 3 dB) is varied from 150 to 250 MHz with a change in the concentration n s according to the power law f 3dB ∝ n −0.5 s due to the dominant contribution of piezoelectric phonon scattering. The minimum conversion loss of the semiconductor heterodyne detector is obtained in structures with a high carrier mobility (μ > 3 × 105 cm2 V−1 s−1 at 4.2 K).
	Address
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	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1063-7826	ISBN		Medium
	Area		Expedition		Conference
	Notes	Полоса и потери преобразования полупроводникового смесителя с фононным каналом охлаждения двумерных электронов			Approved	no
	Call Number				Serial	1216
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	Author	Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I.
	Title	Concentration dependence of the intermediate frequency bandwidth of submillimeter heterodyne AlGaAs/GaAs nanostructures			Type	Journal Article
	Year	2010	Publication	Bull. Russ. Acad. Sci. Phys.	Abbreviated Journal	Bull. Russ. Acad. Sci. Phys.
	Volume	74	Issue	1	Pages	100-102
	Keywords	2DEG AlGaAs/GaAs heterostructures, THz heterodyne detectors, IF bandwidth
	Abstract	The concentration dependence of the intermediate frequency bandwidth of heterodyne AlGaAs/GaAs detectors with 2D electron gas is measured using submillimeter spectroscopy with high time resolution at T= 4.2 K. The intermediate frequency bandwidth f3dBfalls from 245 to 145 MHz with increasing concentration of 2D electrons n s = (1.6-6.6) × 10[su11] cm-2. The dependence f3dB ≈ n s – 0.04±is observed in the studied concentration range; this dependence is determined by electron scattering by the deformation potential of acoustic phonons and piezoelectric scattering.
	Address
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	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1062-8738	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1217
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	Author	Kahl, O.; Ferrari, S.; Kovalyuk, V.; Vetter, A.; Lewes-Malandrakis, G.; Nebel, C.; Korneev, A.; Goltsman, G.; Pernice, W.
	Title	Spectrally multiplexed single-photon detection with hybrid superconducting nanophotonic circuits: supplementary material			Type	Miscellaneous
	Year	2017	Publication	Optica	Abbreviated Journal
	Volume		Issue		Pages	1-9
	Keywords	Quantum detectors; Spectrometers and spectroscopic instrumentation; Nanophotonics and photonic crystals; Fluorescence correlation spectroscopy; Fluorescence resonance energy transfer; Fluorescence spectroscopy; Imaging techniques; Optical components; Quantum key distribution
	Abstract	This document provides supplementary information to “Spectrally multiplexed single-photon detection with hybrid superconducting nanophotonic circuits", DOI:10.1364/optica.4.000557. Here we detail the on-chip spectrometer design, its characterization and the experimental setup we used. In addition, we present a detailed report concerning the characterization of the superconducting nanowire single photon detectors. In the final sections, we describe sample preparation and characterization of the nanodiamonds containing silicon vacancy color centers.
	Address
	Corporate Author				Thesis
	Publisher	Osa	Place of Publication		Editor
	Language		Summary Language		Original Title
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	Notes				Approved	no
	Call Number	Kahl:17			Serial	1218
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	Author	Pyatkov, Felix; Khasminskaya, Svetlana; Fütterling, Valentin; Fechner, Randy; Słowik, Karolina; Ferrari, Simone; Kahl1, Oliver; Kovalyuk, Vadim; Rath, Patrik; Vetter, Andreas; Flavel, Benjamin S.; Hennrich, Frank; Kappes, Manfred M.; Gol’tsman, Gregory N.; Korneev, Alexander; Rockstuhl, Carsten; Krupke, Ralph; Pernice, Wolfram H. P.
	Title	Carbon nanotubes as exceptional electrically driven on-chip light sources			Type	Miscellaneous
	Year	2016	Publication	2Physics	Abbreviated Journal	2Physics
	Volume		Issue		Pages
	Keywords	carbon nanotubes, CNT
	Abstract	Carbon nanotubes (CNTs) belong to the most exciting objects of the nanoworld. Typically, around 1 nm in diameter and several microns long, these cylindrically shaped carbon-based structures exhibit a number of exceptional mechanical, electrical and optical characteristics [1]. In particular, they are promising ultra-small light sources for the next generation of optoelectronic devices, where electrical components are interconnected with photonic circuits. Few years ago, we demonstrated that electically driven CNTs can serve as waveguide-integrated light sources [2]. Progress in the field of nanotube sorting, dielectrophoretical site-selective deposition and efficient light coupling into underlying substrate has made CNTs suitable for wafer-scale fabrication of active hybrid nanophotonic devices [2,3]. Recently we presented a nanotube-based waveguide integrated light emitters with tailored, exceptionally narrow emission-linewidths and short response times [4]. This allows conversion of electrical signals into well-defined optical signals directly within an optical waveguide, as required for future on-chip optical communication. Schematics and realization of this device is shown in Figure 1. The devices were manufactured by etching a photonic crystal waveguide into a dielectric layer following electron beam lithography. Photonic crystals are nanostructures that are also used by butterflies to give the impression of color on their wings. The same principle has been used in this study to select the color of light emitted by the CNT. The precise dimensions of the structure were numerically simulated to tailor the properties of the final device. Metallic contacts in the vicinity to the waveguide were fabricated to provide electrical access to CNT emitters. Finally, CNTs, sorted by structural and electronic properties, were deposited from a solution across the waveguide using dielectrophoresis, which is an electric-field-assisted deposition technique.
	Address
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	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2372-1782	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1219
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	Author	Goltsman, G. N.; Shcherbatenko, M. L.; Lobanov, Y. V.; Kovalyuk, V. V.; Kahl, O.; Ferrari, S.; Korneev, A.; Pernice, W. H. P.
	Title	Superconducting nanowire single photon detector for coherent detection of weak optical signals			Type	Abstract
	Year	2016	Publication	LPHYS'16	Abbreviated Journal	LPHYS'16
	Volume		Issue		Pages	1-2
	Keywords	SSPD, SNSPD
	Abstract	Traditionally, photon detectors are operated in a direct detection mode counting incident photonswith a known quantum efficiency. This procedure allows one to detect weak sources of radiation but allthe information about its frequency is limited by the optical filtering/resonating structures used which arenot as precise as would be required for some practical applications. In this work we propose heterodynereceiver based on a photon counting mixer which would combine excellent sensitivity of a photon countingdetector and excellent spectral resolution given by the heterodyne technique. At present, Superconducting-Nanowire-Single-Photon-Detectors (SNSPDs) [1] are widely used in a variety of applications providing thebest possible combination of the sensitivity and speed. SNSPDs demonstrate lack of drawbacks like highdark count rate or autopulsing, which are common for traditional semiconductor-based photon detectors,such as avalanche photon diodes.In our study we have investigated SNSPD operated as a photon counting mixer. To fully understandits behavior in such a regime, we have utilized experimental setup based on a couple of distributedfeedback lasers irradiating at 1.5 micrometers, one of which is being the Local Oscillator (LO) and theother mimics the test signal [2]. The SNSPD was operated in the current mode and the bias currentwas slightly below of the critical current. Advantageously, we have found that LO power needed for anoptimal mixing is of the order of hundreds of femtowatts to a few picowatts, which is promising for manypractical applications, such as receiver matrices [3]. With use of the two lasers, one can observe thevoltage pulses produced by the detected photons, and the time distribution of the pulses reproduces thefrequency difference between the lasers, forming power response at the intermediate frequency which canbe captured by either an oscilloscope (an analysis of the pulse statistics is needed) or by an RF spectrumanalyzer. Photon-counting nature of the detector ensures quantum-limited sensitivity with respect to theoptical coupling achieved. In addition to the chip SNSPD with normal incidence coupling, we use thedetectors with a travelling wave geometry design [4]. In this case a NbN nanowire is placed on the topof a Si3N4 nanophotonic waveguide, thus increasing the efficient interaction length. For this reason it ispossible to achieve almost complete absorption of photons and reduce the detector footprint. This reducesthe noise of the device together with the expansion of the bandwidth. Integrated device scheme allowsus to measure the optical losses with high accuracy. Our approach is fully scalable and, along with alarge number of devices integrated on a single chip can be adapted to the mid and far IR ranges wherephoton-counting measurement may be beneficial as well [5].Acknowledgements: This work was supported in part by the Ministry of Education and Science of theRussian Federation, contract No. 14.B25.31.0007 and by RFBR grant No. 16-32-00465.
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	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1220
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	Author	Morozov, P.; Lukina, M.; Shirmanova, M.; Divochiy, A.; Dudenkova, V.; Gol'tsman, G. N.; Becker, W.; Shcheslavskiy, V. I.
	Title	Singlet oxygen phosphorescence imaging by superconducting single-photon detector and time-correlated single-photon counting			Type	Journal Article
	Year	2021	Publication	Opt. Lett.	Abbreviated Journal	Opt. Lett.
	Volume	46	Issue	6	Pages	1217-1220
	Keywords	SSPD, SNSPD, applications
	Abstract	This Letter presents, to the best of our knowledge, a novel optical configuration for direct time-resolved measurements of luminescence from singlet oxygen, both in solutions and from cultured cells on photodynamic therapy. The system is based on the superconducting single-photon detector, coupled to the confocal scanner that is modified for the near-infrared measurements. The recording of a phosphorescence signal from singlet oxygen at 1270 nm has been done using time-correlated single-photon counting. The performance of the system is verified by measuring phosphorescence from singlet oxygen generated by the photosensitizers commonly used in photodynamic therapy: methylene blue and chlorin e6. The described system can be easily upgraded to the configuration when both phosphorescence from singlet oxygen and fluorescence from the cells can be detected in the imaging mode. Thus, co-localization of the signal from singlet oxygen with the areas inside the cells can be done.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	English	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0146-9592	ISBN		Medium
	Area		Expedition		Conference
	Notes	PMID:33720151			Approved	no
	Call Number				Serial	1221
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	Author	Zolotov, P. I.; Semenov, A. V.; Divochiy, A. V.; Goltsman, G. N.; Romanov, N. R.; Klapwijk, T. M.
	Title	Dependence of photon detection efficiency on normal-state sheet resistance in marginally superconducting films of NbN			Type	Journal Article
	Year	2021	Publication	IEEE Trans. Appl. Supercond.	Abbreviated Journal	IEEE Trans. Appl. Supercond.
	Volume	31	Issue	5	Pages	1-5
	Keywords	NbN SSPD, SNSPD
	Abstract	We present an extensive set of data on nanowire-type superconducting single-photon detectors based on niobium-nitride (NbN) to establish the empirical correlation between performance and the normal-state resistance per square. We focus, in particular, on the bias current, compared to the expected depairing current, needed to achieve a near-unity detection efficiency for photon detection. The data are discussed within the context of a model in which the photon energy triggers the movement of vortices i.e. superconducting dissipation, followed by thermal runaway. Since the model is based on the non-equilibrium theory for conventional superconductors deviations may occur, because the efficient regime is found when NbN acts as a marginal superconductor in which long-range phase coherence is frustrated.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1051-8223	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1222
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	Author	Zolotov, P.; Semenov, A.; Divochiy, A.; Goltsman, G.
	Title	A comparison of VN and NbN thin films towards optimal SNSPD efficiency			Type	Journal Article
	Year	2021	Publication	IEEE Trans. Appl. Supercond.	Abbreviated Journal	IEEE Trans. Appl. Supercond.
	Volume	31	Issue	5	Pages	1-4
	Keywords	NbN SSPD, SNSPD, WSi
	Abstract	Based on early phenomenological ideas about the operation of superconducting single-photon detectors (SSPD or SNSPD), it was expected that materials with a lower superconducting gap should perform better in the IR range. The plausibility of this concept could be checked using two popular SSPD materials – NbN and WSi films. However, these materials differ strongly in crystallographic structure (polycrystalline B1 versus amorphous), which makes their dependence on disorder different. In our work we present a study of the single-photon response of SSPDs made from two disordered B1 structure superconductors – vanadium nitride and niobium nitride thin films. We compare the intrinsic efficiency of devices made from films with different sheet resistance values. While both materials have a polycrystalline structure and comparable diffusion coefficient values, VN films show metallic behavior over a wide range of sheet resistance, in contrast to NbN films with an insulator-like temperature dependence of resistivity, which may be partially due to enhanced Coulomb interaction, leading to different starting points for the normal electron density of states. The results show that even though VN devices are more promising in terms of theoretical predictions, their optimal performance was not reached due to lower values of sheet resistance.
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	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1051-8223	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1223
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	Author	Moshkova, M.; Morozov, P.; Divochiy, A.; Vakhtomin, Y.; Smirnov, K.
	Title	Large active area superconducting single photon detector			Type	Conference Article
	Year	2019	Publication	J. Phys.: Conf. Ser.	Abbreviated Journal	J. Phys.: Conf. Ser.
	Volume	1410	Issue		Pages	012139
	Keywords	SSPD, SNSPD
	Abstract	We present development of large active area superconducting single-photon detectors well coupled with standard 50 μm-core multi-mode fiber. The sensitive area of the SSPD is patterned using the photon-number-resolving design and occupies an area of 40×40 μm2. Using this approach, we have obtained excellent specifications: system detection efficiency of 47% measured using a 900 nm laser and low dark count rate of 100 cps. The main advantages of the approach presented are a very short dead time of the detector of 22 ns and FWHM jitter value of about 130 ps.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1742-6588	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1224
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	Author	Moshkova, M.; Divochiy, A.; Morozov, P.; Vakhtomin, Y.; Antipov, A.; Zolotov, P.; Seleznev, V.; Ahmetov, M.; Smirnov, K.
	Title	High-performance superconducting photon-number-resolving detectors with 86% system efficiency at telecom range			Type	Journal Article
	Year	2019	Publication	J. Opt. Soc. Am. B	Abbreviated Journal	J. Opt. Soc. Am. B
	Volume	36	Issue	3	Pages	B20
	Keywords	NbN PNR SSPD, SNSPD
	Abstract	The use of improved fabrication technology, highly disordered NbN thin films, and intertwined section topology makes it possible to create high-performance photon-number-resolving superconducting single-photon detectors (PNR SSPDs) that are comparable to conventional single-element SSPDs at the telecom range. The developed four-section PNR SSPD has simultaneously an 86±3% system detection efficiency, 35 cps dark count rate, ∼2 ns dead time, and maximum 90 ps jitter. An investigation of the PNR SSPD’s detection efficiency for multiphoton events shows good uniformity across sections. As a result, such a PNR SSPD is a good candidate for retrieving the photon statistics for light sources and quantum key distribution systems.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0740-3224	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1225
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	Author	Baeva, E. M.; Sidorova, M. V.; Korneev, A. A.; Smirnov, K. V.; Divochy, A. V.; Morozov, P. V.; Zolotov, P. I.; Vakhtomin, Y. B.; Semenov, A. V.; Klapwijk, T. M.; Khrapai, V. S.; Goltsman, G. N.
	Title	Thermal properties of NbN single-photon detectors			Type	Journal Article
	Year	2018	Publication	Phys. Rev. Applied	Abbreviated Journal	Phys. Rev. Applied
	Volume	10	Issue	6	Pages	064063 (1 to 8)
	Keywords	NbN SSPD, SNSPD
	Abstract	We investigate thermal properties of a NbN single-photon detector capable of unit internal detection efficiency. Using an independent calibration of the coupling losses, we determine the absolute optical power absorbed by the NbN film and, via resistive superconductor thermometry, the temperature dependence of the thermal resistance Z(T) of the NbN film. In principle, this approach permits simultaneous measurement of the electron-phonon and phonon-escape contributions to the energy relaxation, which in our case is ambiguous because of the similar temperature dependencies. We analyze Z(T) with a two-temperature model and impose an upper bound on the ratio of electron and phonon heat capacities in NbN, which is surprisingly close to a recent theoretical lower bound for the same quantity in similar devices.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2331-7019	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1226
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	Author	Divochiy, A.; Misiaszek, M.; Vakhtomin, Y.; Morozov, P.; Smirnov, K.; Zolotov, P.; Kolenderski, P.
	Title	Single photon detection system for visible and infrared spectrum range			Type	Journal Article
	Year	2018	Publication	Opt. Lett.	Abbreviated Journal	Opt. Lett.
	Volume	43	Issue	24	Pages	6085-6088
	Keywords
	Abstract	We demonstrate niobium nitride based superconducting single-photon detectors sensitive in the spectral range 452-2300 nm. The system performance was tested in a real-life experiment with correlated photons generated by means of spontaneous parametric downconversion, where one photon was in the visible range and the other was in the infrared range. We measured a signal to noise ratio as high as 4x10(4) in our detection setting. A photon detection efficiency as high as 64% at 1550 nm and 15% at 2300 nm was observed.
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	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	English	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0146-9592	ISBN		Medium
	Area		Expedition		Conference
	Notes	https://arxiv.org/abs/1807.04273			Approved	no
	Call Number				Serial	1227
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	Author	Zolotov, P. I.; Divochiy, A. V.; Vakhtomin, Y. B.; Lubenchenko, A. V.; Morozov, P. V.; Shurkaeva, I. V.; Smirnov, K. V.
	Title	Influence of sputtering parameters on the main characteristics of ultra-thin vanadium nitride films			Type	Conference Article
	Year	2018	Publication	J. Phys.: Conf. Ser.	Abbreviated Journal	J. Phys.: Conf. Ser.
	Volume	1124	Issue		Pages	051030
	Keywords	SSPD, SNSPD, VN
	Abstract	We researched the relation between deposition and ultra-thin VN films parameters. To conduct the experimental study we varied substrate temperature, Ar and N2 partial pressures and deposition rate. The study allowed us to obtain the films with close to the bulk values transition temperatures and implement such samples in order to fabricate superconducting single-photon detectors.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1742-6588	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1228
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	Author	Romanov, N. R.; Zolotov, P. I.; Vakhtomin, Y. B.; Divochiy, A. V.; Smirnov, K. V.
	Title	Electron diffusivity measurements of VN superconducting single-photon detectors			Type	Conference Article
	Year	2018	Publication	J. Phys.: Conf. Ser.	Abbreviated Journal	J. Phys.: Conf. Ser.
	Volume	1124	Issue		Pages	051032
	Keywords	SSPD, SNSPD, VN
	Abstract	The research of ultrathin vanadium nitride (VN) films as a promising candidate for superconducting single-photon detectors (SSPD) is presented. The electron diffusivity measurements are performed for such devices. Devices that were fabricated out from 9.9 nm films had diffusivity coefficient of 0.41 cm2/s and from 5.4 nm – 0.54 cm2/s. Obtained values are similar to other typical SSPD materials. The diffusivity that increases along with decreasing of the film thickness is expected to allow fabrication of the devices with improved characteristics. Fabricated VN SSPDs showed prominent single-photon response in the range 0.9-1.55 µm.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1742-6588	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1229
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	Author	Zolotov, P.; Divochiy, A.; Vakhtomin, Y.; Seleznev, V.; Morozov, P.; Smirnov, K.
	Title	Superconducting single-photon detectors made of ultra-thin VN films			Type	Conference Article
	Year	2018	Publication	KnE Energy	Abbreviated Journal	KnE Energy
	Volume	3	Issue	3	Pages	83-89
	Keywords
	Abstract	We optimized technology of thin VN films deposition in order to study VN-based superconducting single-photon detectors. Investigation of the main VN film parameters showed that this material has lower resistivity compared to commonly used NbN. Fabricated from obtained films devices showed 100% intrinsic detection efficiency at 900 nm, at the temperature of 1.7 K starting with the bias current of 0.7·I
	Address
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	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1230
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	Author	Zolotov, P.; Divochiy, A.; Vakhtomin, Y.; Moshkova, M.; Morozov, P.; Seleznev, V.; Smirnov, K.
	Title	Photon-number-resolving SSPDs with system detection efficiency over 50% at telecom range			Type	Conference Article
	Year	2018	Publication	Proc. AIP Conf.	Abbreviated Journal
	Volume	1936	Issue	1	Pages	020019
	Keywords	NbN PNR SSPD, SNSPD
	Abstract	We used technology of making high-efficiency superconducting single-photon detectors as a basis for improvement of photon-number-resolving devices. By adding optical cavity and using an improved NbN superconducting film, we enhanced previously reported system detection efficiency at telecom range for such detectors. Our results show that implementation of optical cavity helps to develop four-section device with quantum efficiency over 50% at 1.55 µm. Performed experimental studies of detecting multi-photon optical pulses showed irregularities over defining multi-photon through single-photon quantum efficiency.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	doi:10.1063/1.5025457			Serial	1231
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	Author	Smirnov, K.; Divochiy, A.; Vakhtomin, Y.; Morozov, P.; Zolotov, P.; Antipov, A.; Seleznev, V.
	Title	NbN single-photon detectors with saturated dependence of quantum efficiency			Type	Journal Article
	Year	2018	Publication	Supercond. Sci. Technol.	Abbreviated Journal	Supercond. Sci. Technol.
	Volume	31	Issue	3	Pages	035011 (1 to 8)
	Keywords	NbN SSPD, SNSPD
	Abstract	The possibility of creating NbN superconducting single-photon detectors with saturated dependence of quantum efficiency (QE) versus normalized bias current was investigated. It was shown that the saturation increases for the detectors based on finer films with a lower value of Rs300/Rs20. The decreasing of Rs300/Rs20 was related to the increasing influence of quantum corrections to conductivity of superconductors and, in turn, to the decrease of the electron diffusion coefficient. The best samples have a constant value of system QE 94% at Ib/Ic ~ 0.8 and wavelength 1310 nm.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0953-2048	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1232
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	Author	Zolotov, P. I.; Divochiy, A. V.; Vakhtomin, Y. B.; Morozov, P. V.; Seleznev, V. A.; Smirnov, K. V.
	Title	Development of high-effective superconducting single-photon detectors aimed for mid-IR spectrum range			Type	Conference Article
	Year	2017	Publication	J. Phys.: Conf. Ser.	Abbreviated Journal	J. Phys.: Conf. Ser.
	Volume	917	Issue		Pages	062037
	Keywords	NbN SSPD, SNSPD
	Abstract	We report on development of superconducting single-photon detectors (SSPD) with high intrinsic quantum efficiency in the wavelength range 1.31 – 3.3 μm. By optimization of the NbN film thickness and its compound, we managed to improve detection efficiency of the detectors in the range up to 3.3 μm. Optimized devices showed intrinsic quantum efficiencies as high as 10% at mid-IR range.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1742-6588	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1233
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	Author	Vorobyov, V. V.; Kazakov, A. Y.; Soshenko, V. V.; Korneev, A. A.; Shalaginov, M. Y.; Bolshedvorskii, S. V.; Sorokin, V. N.; Divochiy, A. V.; Vakhtomin, Y. B.; Smirnov, K. V.; Voronov, B. M.; Shalaev, V. M.; Akimov, A. V.; Goltsman, G. N.
	Title	Superconducting detector for visible and near-infrared quantum emitters [Invited]			Type	Journal Article
	Year	2017	Publication	Opt. Mater. Express	Abbreviated Journal	Opt. Mater. Express
	Volume	7	Issue	2	Pages	513-526
	Keywords	SSPD, SNSPD
	Abstract	Further development of quantum emitter based communication and sensing applications intrinsically depends on the availability of robust single-photon detectors. Here, we demonstrate a new generation of superconducting single-photon detectors specifically optimized for the 500–1100 nm wavelength range, which overlaps with the emission spectrum of many interesting solid-state atom-like systems, such as nitrogen-vacancy and silicon-vacancy centers in diamond. The fabricated detectors have a wide dynamic range (up to 350 million counts per second), low dark count rate (down to 0.1 counts per second), excellent jitter (62 ps), and the possibility of on-chip integration with a quantum emitter. In addition to performance characterization, we tested the detectors in real experimental conditions involving nanodiamond nitrogen-vacancy emitters enhanced by a hyperbolic metamaterial.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2159-3930	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1234
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