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Author Гершензон, Е. М.; Литвак-Горская, Л. Б.; Рабинович, Р. И. url  openurl
  Title Отрицательное магнитосопротивление в случае проводимости по верхней зоне Хаббарда Type Journal Article
  Year (up) 1983 Publication Физика и техника полупроводников Abbreviated Journal Физика и техника полупроводников  
  Volume 17 Issue 10 Pages 1873-1876  
  Keywords compensated n-InSb, Hubbard upper zone conductivity, negative magnetoresistance  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1763  
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Author Гершензон, Е. М.; Мельников, А. П.; Рабинович, Р. И.; Смирнова, В. Б. url  openurl
  Title О возможности создания инверсной функции распределения свободных носителей в полупроводниках при захвате на мелкие нейтральные примеси Type Journal Article
  Year (up) 1983 Publication Физика и техника полупроводников Abbreviated Journal Физика и техника полупроводников  
  Volume 17 Issue 3 Pages 499-501  
  Keywords shallow neutral impurities, capture, inverse distribution function, Si  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1764  
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Author Гольцман, Г. Н.; Птицина, Н. Г.; Ригер, Е. Р. url  openurl
  Title Оже-рекомбинация свободных носителей на мелких донорах в германии Type Journal Article
  Year (up) 1984 Publication Физика и техника полупроводников Abbreviated Journal Физика и техника полупроводников  
  Volume 18 Issue 9 Pages 1684-1686  
  Keywords Ge, free carrier recombination  
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  Publisher Place of Publication Editor  
  Language Russian Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
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  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1710  
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Author Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. url  openurl
  Title Heating of electrons in a superconductor in the resistive state by electromagnetic radiation Type Journal Article
  Year (up) 1984 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP  
  Volume 59 Issue 2 Pages 442-450  
  Keywords Nb HEB  
  Abstract The effect of heating of electrons relative to phonons is observed and investigated in a superconducting film that is made resistive by current and by an external magnetic field. The effect is manifested by an increase of the film resistance under the influence of the electromagnetic radiation, and is not selective in the frequency band 10^10-10^15 Hz. The independence of the effect of frequency under conditions of strong scattering by static defects is attributed to the decisive role of electron-electron collisions in the distribution function. The experimentally obtained characteristic time of resistance variation near the superconducting transition corresponds to the relaxation time of the order parameter, while at lower temperatures and fields it corresponds to the time of the inelastic electron-phonon interaction.  
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  Notes Approved no  
  Call Number RPLAB @ phisix @ Serial 983  
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Author Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semyonov, A. D.; Sergeev, A. V. url  doi
openurl 
  Title Heating of electrons in superconductor in the resistive state due to electromagnetic radiation Type Journal Article
  Year (up) 1984 Publication Solid State Communications Abbreviated Journal Solid State Communications  
  Volume 50 Issue 3 Pages 207-212  
  Keywords Nb HEB  
  Abstract The effect of heating electrons with respect to phonons in a thin superconducting film driven into the resistive state by the current and the external magnetic field has been observed and investigated. This effect caused by the electromagnetic radiation is manifested in the increased resistance of the film and is not selective over the frequency range from 1010 to 1015 Hz. That the effect is frequency independent under the conditions of strong electron scattering caused by static defects is explained by the decisive role of electron -electron collisions in forming the distribution function. The characteristic time of resistance change, obtained experimentally, corresponds to the relaxation time of the order parameter near the superconducting transition and to the relaxation time of the nonelastic electron-phonon interaction at lower temperatures and in lower magnetic fields.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0038-1098 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1709  
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Author Гершензон, Е. М.; Семенов, И. Т.; Фогельсон, М. С. url  openurl
  Title О механизме динамического сужения линии ЭПР доноров фосфора в кремнии Type Journal Article
  Year (up) 1984 Publication Физика и техника полупроводников Abbreviated Journal Физика и техника полупроводников  
  Volume 18 Issue 3 Pages 421-425  
  Keywords Si, phosphorus donors, EPR  
  Abstract Температурная зависимость ширины линии ЭПР доноров Р в Si исследована в интервале концентрации ND=2.5⋅1017−9⋅1017см−3 и температур T=1.7−45 K на образцах с различной степенью компенсации основной примеси. Результаты согласуются с моделью обменного сужения линии при учете температурной зависимости обменного интеграла и тем самым исключают предлагавшийся ранее механизм сужения линии вследствие прыжкового движения электронов по примесным центрам.  
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  Notes Approved no  
  Call Number Serial 1761  
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Author Гершензон, Е. М.; Семенов, И. Т.; Фогельсон, М. С. url  openurl
  Title Спин-решеточная релаксация доноров фосфора в кремнии при одноосной деформации образца Type Journal Article
  Year (up) 1985 Publication Физика и техника полупроводников Abbreviated Journal Физика и техника полупроводников  
  Volume 19 Issue 9 Pages 1696-1698  
  Keywords uniaxial pressure, Ge, phosphorus donors, spin-lattice relaxation  
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  Notes Approved no  
  Call Number Serial 1760  
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Author Goltsman, G. N.; Maliavkin, A. V.; Ptitsina, N. G.; Selevko, A. G. url  openurl
  Title Magnetic exciton spectroscopy in uniaxially compressed Ge at submillimeter waves Type Conference Article
  Year (up) 1986 Publication Izv. Akad. Nauk SSSR, Seriya Fizicheskaya Abbreviated Journal Izv. Akad. Nauk SSSR, Seriya Fizicheskaya  
  Volume 50 Issue Pages 280-281  
  Keywords Ge, axial compression loads, excitons, germanium, magnetic spectroscopy, submillimeter waves, Zeeman effect  
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  Language Russian Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0367-6755 ISBN Medium  
  Area Expedition Conference 3rd Vsesoiuznyi Seminar po Opticheskomu Detektirovaniiu Magnitnykh Rezonansov v Tverdykh Telakh, Kiev, Ukrainian SSR, May 1985  
  Notes Approved no  
  Call Number Serial 1708  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Riger, E. R. url  openurl
  Title Effect of electron-electron collisions on the trapping of free carriers by shallow impurity centers in germanium Type Journal Article
  Year (up) 1986 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP  
  Volume 64 Issue 4 Pages 889-897  
  Keywords Ge, trapping of free carriers  
  Abstract Cascade Auger recombination of free carriers on shallow impurities in Ge is investigated under quasi-equilibrium conditions (T= 2-12 K) and in impurity breakdown. The Auger capture cross sections are found to be a,= 5. 10-l9 T-'n cm2 for donors and uip= 7- T-5p cm2 for acceptors. It is shown that in an isotropic semiconductor (p-Ge) ui is well described by the cascade-capture theory that takes into account only electron-electron collisions. In an anisotropic semiconductor ui is considerably larger (n-Ge, strongly uniaxially compressedp-Ge). Under impurity breakdown conditions the electron-electron collisions determine the lifetimes of the free carriers only in samples with appreciable density of the compensating impurity (Nk loi3 cmP3).  
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  Notes Approved no  
  Call Number Serial 1707  
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Author Гершензон, Е. М.; Литвак-Горская, Л. Б.; Луговая, Г. Я.; Шапиро, Е. З. url  openurl
  Title Об интерпретации отрицательного магнитосопротивления в случае проводимости по верхней зоне Хаббарда в n-Ge⟨Sb⟩ Type Journal Article
  Year (up) 1986 Publication Физика и техника полупроводников Abbreviated Journal Физика и техника полупроводников  
  Volume 20 Issue 1 Pages 99-103  
  Keywords n-Ge, Hubbard upper zone conductivity, negative magnetoresistance  
  Abstract В рамках теории квантовых поправок к проводимости объяснено отрицательное магнитосопротивление в n-Ge с концентрацией доноров Nd≃2.8⋅1016÷1.1⋅1017см−3, наблюдаемое в диапазоне температур 4.2−10 K, когда основной вклад в проводимость дают электроны верхней зоны Хаббарда. Показано, что время релаксации фазы волновой функции τφ определяется временем электрон-фононного взаимодействия τeph.  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1759  
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