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Iomdina, E. N.; Seliverstov, S. V.; Sianosyan, A. A.; Teplyakova, K. O.; Rusova, A. A.; Goltsman, G. N. |
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Terahertz scanning for evaluation of corneal and scleral hydration |
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Journal Article |
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2018 |
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Sovremennye tehnologii v medicine |
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STM |
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10 |
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4 |
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143-149 |
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BWO; Golay cell; medicine; cornea; sclera; THz radiation; corneal hydration; backward-wave oscillator; avalanche transit-time diode; IMPATT diode |
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Abstract |
The aim of the investigation was to study the prospects of using continuous THz scanning of the cornea and the sclera to determine water concentration in these tissues and on the basis of the obtained data to develop the experimental installation for monitoring corneal and scleral hydration degree.Materials and Methods. To evaluate corneal and scleral transmittance and reflectance spectra in the THz range, the developed experimental installations were used to study 3 rabbit corneas and 3 scleras, 2 whole rabbit eyes, and 3 human scleras. Besides, two rabbit eyes were studied in vivo prior to keratorefractive surgery as well as 10 and 21 days following the surgery (LASIK).Results. There have been created novel experimental installations enabling in vitro evaluation of frequency dependence of corneal and scleral transmittance coefficients and reflectance coefficients on water percentage in the THz range. Decrease in corneal water content by 1% was found to lead to reliably established decrease in the reflected signal by 13%. The reflectance spectrum of the whole rabbit eye was measured in the range of 0.13–0.32 THz. The study revealed the differences between the indices of rabbit cornea and sclera, as well as rabbit and human sclera. There was developed a laboratory model of the installation for in vivo evaluation of corneal and scleral hydration using THz radiation.Conclusion. The preliminary findings show that the proposed technique based on the use of continuous THz radiation can be employed to create a device for noninvasive control of corneal and scleral hydration. |
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1315 |
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Gershenzon, E. M.; Goltsman, G.; Orlova, S.; Ptitsina, N.; Gurvich, Y. |
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Germanium hot-electron narrow-band detector |
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1971 |
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Sov. Radio Engineering And Electronic Physics |
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Sov. Radio Engineering And Electronic Physics |
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16 |
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8 |
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1346 |
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Ge HEB detectors |
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Scripps Clinic Res Foundation 476 Prospect St, La Jolla, Ca 92037 |
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1741 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Kagane, M. L. |
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Title |
Observation of free carrier resonances in p-type germanium at submillimeter wavelengths |
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Journal Article |
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1978 |
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Sov. Phys. Solid State |
Abbreviated Journal |
Sov. Phys. Solid State |
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20 |
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4 |
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573-579 |
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p-Ge, free carriers, resonances |
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The spectrum of hole resonances in pure p-Ge for submillimetre in quantizing magnetic fields has been studied and identified. Measurements of photoconductivity spectra of p-Ge were made in the wave range lambda = 2-0.3 mm at temp. of 4.2-15 deg K in magnetic fields H up to 40 Measurements at various frequencies showed that the position of a series of characteristic resonances depends on the frequency of the illumination. This is in line with theoretical conclusions about the effective mass of the carriers increasing with rise in the magnetic field as a result of the interaction of the edge of the valency band with the split spin-orbital interaction of the sub 7 exp + band and the conduction band. The relative intensity of the quantum resonance lines of the free holes depends on the excitation conditions. |
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1721 |
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Gershenzon, E. M.; Goltsman, G. N. |
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Title |
Zeeman effect in excited-states of donors in germanium |
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1972 |
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Sov. Phys. Semicond. |
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Sov. Phys. Semicond. |
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6 |
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3 |
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509 |
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Ge, donors, Zeeman effect |
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Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa |
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1737 |
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Gershenson, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.; Kagane, M. L.; Multanovskii, V. V.; Ptitsina, N. G. |
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Use of submillimeter backward-wave tube spectroscopy in determination of the chemical nature and concentration of residual impurities in pure semiconductors |
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1983 |
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Sov. Phys. Semicond. |
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Sov. Phys. Semicond. |
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17 |
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8 |
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908-913 |
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BWO spectroscopy, pure semiconductors, residual impurities |
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Применение субмиллиметровой ЛОВ спектроскопии для определения химической природы и концентрации примесей в чистых полупроводниках |
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