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Author Zhang, W.; Jiang, L.; Lin, Z. H.; Yao, Q. J.; Li, J.; Shi, S. C.; Svechnikov, S. I.; Vachtomin, Yu. B.; Antipov, S. V.; Voronov, B. M.; Kaurova, N. S.; Gol'tsman, G. N. url  openurl
  Title (up) Development of a quasi-optical NbN superconducting HEB mixer Type Conference Article
  Year 2005 Publication Proc. 16th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 16th Int. Symp. Space Terahertz Technol.  
  Volume Issue Pages 209-213  
  Keywords NbN HEB mixers  
  Abstract In this paper, we report the performance of a quasi-optical NbN superconducting HEB (hot electron bolometer) mixer measured at 500 and 850GHz. The quasi-optical NbN superconducting HEB mixer is cryogenically cooled by a 4-K close-cycled refrigerator. Measured receiver noise temperature at 850 and 500GHz are 3000K and 2500K respectively with wire grid as beamsplitter, while the lowest receiver noise temperature is found to be approximately 1200K with Mylar film. The theoretical receiver noise temperature (taking into account the elliptical polarization of log-spiral antenna) is consistent with measured one. The receiver noise temperature and conversion gain with 15-μm Mylar film as the beamsplitter at 500GHz are thoroughly investigated for different LO pumping levels and dc biases. The stability of the mixer’s IF output power is also demonstrated.  
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  Notes Approved no  
  Call Number Serial 1470  
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Author Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. url  doi
openurl 
  Title (up) Development of a silicon membrane-based multipixel hot electron bolometer receiver Type Journal Article
  Year 2017 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume 27 Issue 4 Pages 1-5  
  Keywords Multi-pixel, NbN HEB, silicon-on-insulator, horn array  
  Abstract We report on the development of a multipixel hot electron bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin-film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 and 300 μm, respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, fed by a monolithic drilled smooth-walled horn array.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1051-8223 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1324  
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Author Elezov, M. S.; Shcherbatenko, M. L.; Sych, D. V.; Goltsman, G. N. url  doi
openurl 
  Title (up) Development of control method for an optimal quantum receiver Type Conference Article
  Year 2020 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume 1695 Issue Pages 012126  
  Keywords Helstrom bound, SPD, single photon detector, below quantum limit  
  Abstract We propose a method for optimal displacement controlling of an optimal quantum receiver for registrations a binary coherent signal. An optimal receiver is able to distinguish between two phase-modulated states of a coherent signal. The optimal receiver controlling method can be used later in practice in various physical implementations of the optimal receiver.  
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  Series Volume Series Issue Edition  
  ISSN 1742-6588 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1264  
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Author Romanov, N. R.; Zolotov, P. I.; Smirnov, K. V. url  isbn
openurl 
  Title (up) Development of disordered ultra-thin superconducting vanadium nitride films Type Conference Article
  Year 2019 Publication Proc. 8th Int. Conf. Photonics and Information Optics Abbreviated Journal Proc. 8th Int. Conf. Photonics and Information Optics  
  Volume Issue Pages 425-426  
  Keywords VN films  
  Abstract We present the results of development and research of superconducting vanadium nitride VN films ~10 nm thick having different level of disorder. It is showed that both silicon substrate temperature T sub in process of magnetron sputtering and total gas pressure P affect superconducting transition temperature of sputtered films and R 300 /R 20 ratio defining their level of disorder. VN films suitable for development of superconducting single-photon detectors on their basis are obtained.  
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  Language Russian Summary Language Original Title  
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  ISSN ISBN 978-5-7262-2536-4 Medium  
  Area Expedition Conference  
  Notes http://fioconf.mephi.ru/files/2018/12/FIO2019-Sbornik.pdf Approved no  
  Call Number Serial 1802  
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Author Zolotov, P.; Vakhtomin, Yu.; Divochiy, A.; Morozov, P.; Seleznev, V.; Smirnov, K url  openurl
  Title (up) Development of fast and high-effective single-photon detector for spectrum range up to 2.3 μm Type Conference Article
  Year 2017 Publication Proc. SPBOPEN Abbreviated Journal Proc. SPBOPEN  
  Volume Issue Pages 439-440  
  Keywords SSPD, SNSPD  
  Abstract We present the results of development and testing of the single-photon-counting system operating in the wide spectrum rane up to 2.3 mcm. We managed to increase system detection efficiency up to 60% in the range of 1.7-2.3 mcm optimisation of the fabrication methods of superconducting single-photon detectors and application of the single-mode fiber with enlarged core diameter.  
  Address St. Petersburg, Russia  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1255  
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