| |
Records |
Links |
|
Author  |
Финкель, М. И. |
|
| |
Title |
Терагерцовые смесители на эффекте электронного разогрева в ультратонких плёнках NbN и NbTiN |
Type |
Manuscript |
| |
Year |
2006 |
Publication |
М. МПГУ |
Abbreviated Journal |
|
|
| |
Volume |
|
Issue |
|
Pages |
|
|
| |
Keywords |
HEB, detector, mixer, terahertz, THz, infrared, IR, direct detection effect, conversion bandwidth, conversion loss |
|
| |
Abstract |
|
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
Ph.D. thesis |
|
| |
Publisher |
|
Place of Publication |
|
Editor |
|
|
| |
Language |
|
Summary Language |
|
Original Title |
|
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
|
ISBN |
|
Medium |
|
|
| |
Area |
|
Expedition |
|
Conference |
|
|
| |
Notes |
|
Approved |
no |
|
| |
Call Number |
|
Serial |
597 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Масленников, Сергей Николаевич |
|
| |
Title |
Смесители на эффекте электронного разогрева для терагерцового и инфракрасного диапазонов |
Type |
Manuscript |
| |
Year |
2007 |
Publication |
М. МПГУ |
Abbreviated Journal |
|
|
| |
Volume |
|
Issue |
|
Pages |
|
|
| |
Keywords |
HEB, detector, mixer, terahertz, THz, infrared, IR, direct detection effect, conversion loss |
|
| |
Abstract |
|
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
Ph.D. thesis |
|
| |
Publisher |
|
Place of Publication |
|
Editor |
|
|
| |
Language |
Russian |
Summary Language |
|
Original Title |
|
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
|
ISBN |
|
Medium |
|
|
| |
Area |
|
Expedition |
|
Conference |
|
|
| |
Notes |
|
Approved |
no |
|
| |
Call Number |
|
Serial |
481 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Zhang, J.; Pearlman, A.; Slysz, W.; Verevkin, A.; Sobolewski, R.; Okunev, O.; Korneev, A.; Kouminov, P.; Smirnov, K.; Chulkova, G.; Gol’tsman, G. N.; Lo, W.; Wilsher, K. |
|
| |
Title |
Infrared picosecond superconducting single-photon detectors for CMOS circuit testing |
Type |
Conference Article |
| |
Year |
2003 |
Publication |
CLEO/QELS |
Abbreviated Journal |
CLEO/QELS |
|
| |
Volume |
|
Issue |
|
Pages |
Cmv4 |
|
| |
Keywords |
NbN SSPD; SNSPD; Infrared; Quantum detectors; Electron beam lithography; Infrared detectors; Infrared radiation; Quantum efficiency; Single photon detectors; Superconductors |
|
| |
Abstract |
Novel, NbN superconducting single-photon detectors have been developed for ultrafast, high quantum efficiency detection of single quanta of infrared radiation. Our devices have been successfully implemented in a commercial VLSI CMOS circuit testing system. |
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
Optical Society of America |
Place of Publication |
|
Editor |
|
|
| |
Language |
|
Summary Language |
|
Original Title |
|
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
|
ISBN |
|
Medium |
|
|
| |
Area |
|
Expedition |
|
Conference |
Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference |
|
| |
Notes |
|
Approved |
no |
|
| |
Call Number |
|
Serial |
1518 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Verevkin, A.; Slysz, W.; Pearlman, A.; Zhang, J.; Sobolewski, R.; Okunev, O.; Korneev, A.; Kouminov, P.; Smirnov, K.; Chulkova, G.; Gol’tsman, G. N.; Currie, M. |
|
| |
Title |
Real-time GHz-rate counting of infrared photons using nanostructured NbN superconducting detectors |
Type |
Conference Article |
| |
Year |
2003 |
Publication |
CLEO/QELS |
Abbreviated Journal |
CLEO/QELS |
|
| |
Volume |
|
Issue |
|
Pages |
CThM8 |
|
| |
Keywords |
NbN SSPD; SNSPD; Infrared; Quantum detectors; Detectors; Photon counting; Quantum communications; Quantum cryptography; Single photon detectors; Superconductors |
|
| |
Abstract |
We demonstrate that our ultrathin, nanometer-width NbN superconducting single-photon detectors are capable of above 1-GHz-frequency, real-time counting of near-infrared photons. The measured system jitter of the detector is below 15 ps. |
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
Optical Society of America |
Place of Publication |
|
Editor |
|
|
| |
Language |
|
Summary Language |
|
Original Title |
|
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
|
ISBN |
|
Medium |
|
|
| |
Area |
|
Expedition |
|
Conference |
Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference |
|
| |
Notes |
|
Approved |
no |
|
| |
Call Number |
|
Serial |
1517 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Tretyakov, I.; Svyatodukh, S.; Perepelitsa, A.; Ryabchun, S.; Kaurova, N.; Shurakov, A.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. |
|
| |
Title |
Ag2S QDs/Si heterostructure-based ultrasensitive SWIR range detector |
Type |
Journal Article |
| |
Year |
2020 |
Publication |
Nanomaterials (Basel) |
Abbreviated Journal |
Nanomaterials (Basel) |
|
| |
Volume |
10 |
Issue |
5 |
Pages |
1-12 |
|
| |
Keywords |
detector; quantum dots; short-wave infrared range; silicon |
|
| |
Abstract |
In the 20(th) century, microelectronics was revolutionized by silicon-its semiconducting properties finally made it possible to reduce the size of electronic components to a few nanometers. The ability to control the semiconducting properties of Si on the nanometer scale promises a breakthrough in the development of Si-based technologies. In this paper, we present the results of our experimental studies of the photovoltaic effect in Ag2S QD/Si heterostructures in the short-wave infrared range. At room temperature, the Ag2S/Si heterostructures offer a noise-equivalent power of 1.1 x 10(-10) W/ radicalHz. The spectral analysis of the photoresponse of the Ag2S/Si heterostructures has made it possible to identify two main mechanisms behind it: the absorption of IR radiation by defects in the crystalline structure of the Ag2S QDs or by quantum QD-induced surface states in Si. This study has demonstrated an effective and low-cost way to create a sensitive room temperature SWIR photodetector which would be compatible with the Si complementary metal oxide semiconductor technology. |
|
| |
Address |
Laboratory of nonlinear optics, Zavoisky Physical-Technical Institute of the Russian Academy of Sciences, Kazan 420029, Russia |
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
|
Editor |
|
|
| |
Language |
English |
Summary Language |
|
Original Title |
|
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
2079-4991 |
ISBN |
|
Medium |
|
|
| |
Area |
|
Expedition |
|
Conference |
|
|
| |
Notes |
PMID:32365694; PMCID:PMC7712218 |
Approved |
no |
|
| |
Call Number |
|
Serial |
1151 |
|
| Permanent link to this record |
