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Mitin, Vladimir; Antipov, Andrei; Sergeev, Andrei; Vagidov, Nizami; Eason, David; Strasser, Gottfried |
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Title |
Quantum Dot Infrared Photodetectors: Photoresponse Enhancement Due to Potential Barriers |
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Journal Article |
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2011 |
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Nanoscale Research Letters |
Abbreviated Journal |
Nanoscale res lett |
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6 |
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1 |
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6 |
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Quantum dots; Infrared detectors; Photoresponse; Doping; Potential barriers; Capture processes |
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Potential barriers around quantum dots (QDs) play a key role in kinetics of photoelectrons. These barriers are always created, when electrons from dopants outside QDs fill the dots. Potential barriers suppress the capture processes of photoelectrons and increase the photoresponse. To directly investigate the effect of potential barriers on photoelectron kinetics, we fabricated several QD structures with different positions of dopants and various levels of doping. The potential barriers as a function of doping and dopant positions have been determined using nextnano3 software. We experimentally investigated the photoresponse to IR radiation as a function of the radiation frequency and voltage bias. We also measured the dark current in these QD structures. Our investigations show that the photoresponse increases ~30 times as the height of potential barriers changes from 30 to 130 meV. |
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RPLAB @ gujma @ |
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712 |
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Zhang, J.; Pearlman, A.; Slysz, W.; Verevkin, A.; Sobolewski, R.; Okunev, O.; Korneev, A.; Kouminov, P.; Smirnov, K.; Chulkova, G.; Gol’tsman, G. N.; Lo, W.; Wilsher, K. |
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Infrared picosecond superconducting single-photon detectors for CMOS circuit testing |
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2003 |
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CLEO/QELS |
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CLEO/QELS |
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Cmv4 |
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NbN SSPD; SNSPD; Infrared; Quantum detectors; Electron beam lithography; Infrared detectors; Infrared radiation; Quantum efficiency; Single photon detectors; Superconductors |
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Novel, NbN superconducting single-photon detectors have been developed for ultrafast, high quantum efficiency detection of single quanta of infrared radiation. Our devices have been successfully implemented in a commercial VLSI CMOS circuit testing system. |
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Optical Society of America |
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Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference |
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1518 |
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Beck, M.; Klammer, M.; Rousseau, I.; Gol’tsman, G. N.; Diamant, I.; Dagan, Y.; Demsar, J. |
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Probing superconducting gap dynamics with THz pulses |
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2015 |
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CLEO |
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CLEO |
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SM3H.3 (1 to 2) |
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superconducting gap; electric fields; femtosecond pulses; near infrared radiation; picosecond pulses; superconductors; thin films |
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We studied superconducting gap dynamics in a BCS superconductor NbN and electron doped cuprate superconductor PCCO following excitation with near-infrared (NIR) and narrow band THz pulses. Systematic studies on PCCO imply very selective electron-phonon coupling. |
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Optical Society of America |
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1345 |
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Marsili, F.; Bitauld, D.; Divochiy, A.; Gaggero, A.; Leoni, R.; Mattioli, F.; Korneev, A.; Seleznev, V.; Kaurova, N.; Minaeva, O.; Gol’tsman, G.; Lagoudakis, K.G.; Benkahoul, M.; Lévy, F.; Fiore, A. |
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Superconducting nanowire photon number resolving detector at telecom wavelength |
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2008 |
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CLEO/QELS |
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CLEO/QELS |
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Qmj1 (1 to 2) |
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PNR SSPD; SNSPD; Detectors; Infrared; Low light level; Diode lasers; Photons; Scanning electron microscopy; Superconductors; Ti:sapphire lasers |
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We demonstrate a photon-number-resolving (PNR) detector, based on parallel superconducting nanowires, capable of resolving up to 5 photons in the telecommunication wavelength range, with sensitivity and speed far exceeding existing approaches. |
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Optical Society of America |
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978-1-55752-859-9 |
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Marsili:08 |
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1243 |
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Tretyakov, I.; Svyatodukh, S.; Perepelitsa, A.; Ryabchun, S.; Kaurova, N.; Shurakov, A.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. |
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Ag2S QDs/Si heterostructure-based ultrasensitive SWIR range detector |
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Journal Article |
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2020 |
Publication |
Nanomaterials (Basel) |
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Nanomaterials (Basel) |
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10 |
Issue |
5 |
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1-12 |
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detector; quantum dots; short-wave infrared range; silicon |
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In the 20(th) century, microelectronics was revolutionized by silicon-its semiconducting properties finally made it possible to reduce the size of electronic components to a few nanometers. The ability to control the semiconducting properties of Si on the nanometer scale promises a breakthrough in the development of Si-based technologies. In this paper, we present the results of our experimental studies of the photovoltaic effect in Ag2S QD/Si heterostructures in the short-wave infrared range. At room temperature, the Ag2S/Si heterostructures offer a noise-equivalent power of 1.1 x 10(-10) W/ radicalHz. The spectral analysis of the photoresponse of the Ag2S/Si heterostructures has made it possible to identify two main mechanisms behind it: the absorption of IR radiation by defects in the crystalline structure of the Ag2S QDs or by quantum QD-induced surface states in Si. This study has demonstrated an effective and low-cost way to create a sensitive room temperature SWIR photodetector which would be compatible with the Si complementary metal oxide semiconductor technology. |
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Laboratory of nonlinear optics, Zavoisky Physical-Technical Institute of the Russian Academy of Sciences, Kazan 420029, Russia |
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English |
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2079-4991 |
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PMID:32365694; PMCID:PMC7712218 |
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1151 |
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