| Records |
| Author |
Verevkin, A. A.; Zhang, J.; Slysz, W.; Sobolewski, R.; Lipatov, A. P.; Okunev, O.; Chulkova, G.; Korneev, A.; Gol’tsman, G. N. |
| Title |
Superconducting single-photon detectors for GHz-rate free-space quantum communications |
Type |
Conference Article |
| Year |
2002 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
| Volume |
4821 |
Issue |
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Pages |
447-454 |
| Keywords |
NbN SSPD, SNSPD, single-photon detector, thin-film superconductivity, quantum cryptography, ultrafast communications |
| Abstract |
We report our studies on the performance of new NbN ultrathin-film superconducting single-photon detectors (SSPDs). Our SSPDs exhibit experimentally measured quantum efficiencies from 5% at wavelength λ = 1550 nm up to 10% at λ = 405 nm, with exponential, activation-energy-type spectral sensitivity dependence in the 0.4-μm – 3-μm wavelength range. Using a variable optical delay setup, we have shown that our NbN SSPDs can resolve optical photons with a counting rate up to 10 GHz, presently limited by the read-out electronics. The measured device jitter was below 35 ps under optimum biasing conditions. The extremely high photon counting rate, together with relatively high (especially for λ > 1 μm) quantum efficiency, low jitter, and very low dark counts, make NbN SSPDs very promising for free-space communications and quantum cryptography. |
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SPIE |
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Editor |
Ricklin, J.C.; Voelz, D.G. |
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Free-Space Laser Communication and Laser Imaging II |
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no |
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Serial |
1523 |
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| Author |
Vodolazov, D. Y.; Manova, N. N.; Korneeva, Y. P.; Korneev, A. A. |
| Title |
Timing jitter in NbN superconducting microstrip single-photon detector |
Type |
Journal Article |
| Year |
2020 |
Publication |
Phys. Rev. Applied |
Abbreviated Journal |
Phys. Rev. Applied |
| Volume |
14 |
Issue |
4 |
Pages |
044041 (1 to 8) |
| Keywords |
NbN SSPD, SNSPD |
| Abstract |
We experimentally study timing jitter of single-photon detection by NbN superconducting strips with width w ranging from 190 nm to 3μm. We find that timing jitter of both narrow (190 nm) and micron-wide strips is about 40 ps at currents where internal detection efficiency η saturates and it is close to our instrumental jitter. We also calculate intrinsic timing jitter in wide strips using the modified time-dependent Ginzburg-Landau equation coupled with a two-temperature model. We find that with increasing width the intrinsic timing jitter increases and the effect is most considerable at currents where a rapid growth of η changes to saturation. We relate it with complicated vortex and antivortex dynamics, which depends on a photon’s absorption site across the strip and its width. The model also predicts that at current close to depairing current the intrinsic timing jitter of a wide strip could be about ℏ/kBTc (Tc is a critical temperature of superconductor), i.e., the same as for a narrow strip. |
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2331-7019 |
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no |
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1788 |
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| Author |
Xu, Y.; Zheng, X.; Williams, C.; Verevkin, A.; Sobolewski, R.; Chulkova, G.; Lipatov, A.; Okunev, O.; Smirnov, K.; Gol’tsman, G. N. |
| Title |
Ultrafast superconducting hot-electron single-photon detector |
Type |
Conference Article |
| Year |
2001 |
Publication |
CLEO |
Abbreviated Journal |
CLEO |
| Volume |
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Issue |
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Pages |
345 |
| Keywords |
NbN SSPD, SNSPD |
| Abstract |
Summary form only given. The current most-pressing need is to develop a practical, GHz-range counting single-photon detector, operational at either 1.3-/spl mu/m or 1.55-/spl mu/m radiation wavelength, for novel quantum communication and quantum cryptography systems. The presented solution of the problem is to use an ultrafast hot-electron photodetector, based on superconducting thin-film microstructures. This type of device is very promising, due to the macroscopic quantum nature of superconductors. Very fast response time and the small, (meV range) value of the superconducting energy gap characterize the superconductor, leading to the efficient avalanche process even for infrared photons. |
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Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Technical Digest (IEEE Cat. No.01CH37170) |
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no |
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Serial |
1545 |
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| Author |
Yang, J. K. W.; Dauler, E.; Ferri, A.; Pearlman, A.; Verevkin, A.; Gol’tsman, G.; Voronov, B.; Sobolewski, R.; Keicher, W. E.; Berggren, K. K. |
| Title |
Fabrication development for nanowire GHz-counting-rate single-photon detectors |
Type |
Journal Article |
| Year |
2005 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
15 |
Issue |
2 |
Pages |
626-630 |
| Keywords |
NbN SSPD, SNSPD |
| Abstract |
We have developed a fabrication process for GHz-counting-rate, single-photon, high-detection-efficiency, NbN, nanowire detectors. We have demonstrated two processes for the device patterning, one based on the standard polymethylmethacrylate (PMMA) organic positive-tone electron-beam resist, and the other based on the newer hydrogen silsesquioxane (HSQ) negative-tone spin-on-glass resist. The HSQ-based process is simple and robust, providing high resolution and the prospect of high fill-factors. Initial testing results show superconductivity in the films, and suggest that the devices exhibit photosensitivity. |
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1558-2515 |
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no |
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Serial |
1466 |
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| Author |
Zhang, J.; Boiadjieva, N.; Chulkova, G.; Deslandes, H.; Gol'tsman, G. N.; Korneev, A.; Kouminov, P.; Leibowitz, M.; Lo, W.; Malinsky, R.; Okunev, O.; Pearlman, A.; Slysz, W.; Smirnov, K.; Tsao, C.; Verevkin, A.; Voronov, B.; Wilsher, K.; Sobolewski, R. |
| Title |
Noninvasive CMOS circuit testing with NbN superconducting single-photon detectors |
Type |
Journal Article |
| Year |
2003 |
Publication |
Electron. Lett. |
Abbreviated Journal |
Electron. Lett. |
| Volume |
39 |
Issue |
14 |
Pages |
1086-1088 |
| Keywords |
NbN SSPD, SNSPD, applications |
| Abstract |
The 3.5 nm thick-film, meander-structured NbN superconducting single-photon detectors have been implemented in the CMOS circuit-testing system based on the detection of near-infrared photon emission from switching transistors and have significantly improved the performance of the system. Photon emissions from both p- and n-MOS transistors have been observed. |
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0013-5194 |
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no |
| Call Number |
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Serial |
1512 |
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