| Records |
| Author |
Zhang, J.; Boiadjieva, N.; Chulkova, G.; Deslandes, H.; Gol'tsman, G. N.; Korneev, A.; Kouminov, P.; Leibowitz, M.; Lo, W.; Malinsky, R.; Okunev, O.; Pearlman, A.; Slysz, W.; Smirnov, K.; Tsao, C.; Verevkin, A.; Voronov, B.; Wilsher, K.; Sobolewski, R. |
| Title |
Noninvasive CMOS circuit testing with NbN superconducting single-photon detectors |
Type |
Journal Article |
| Year |
2003 |
Publication |
Electron. Lett. |
Abbreviated Journal |
Electron. Lett. |
| Volume |
39 |
Issue |
14 |
Pages |
1086-1088 |
| Keywords |
NbN SSPD, SNSPD, applications |
| Abstract |
The 3.5 nm thick-film, meander-structured NbN superconducting single-photon detectors have been implemented in the CMOS circuit-testing system based on the detection of near-infrared photon emission from switching transistors and have significantly improved the performance of the system. Photon emissions from both p- and n-MOS transistors have been observed. |
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0013-5194 |
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1512 |
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Korneev, A.; Lipatov, A.; Okunev, O.; Chulkova, G.; Smirnov, K.; Gol’tsman, G.; Zhang, J.; Slysz, W.; Verevkin, A.; Sobolewski, R. |
| Title |
GHz counting rate NbN single-photon detector for IR diagnostics of VLSI CMOS circuits |
Type |
Journal Article |
| Year |
2003 |
Publication |
Microelectronic Engineering |
Abbreviated Journal |
Microelectronic Engineering |
| Volume |
69 |
Issue |
2-4 |
Pages |
274-278 |
| Keywords |
NbN SSPD, SNSPD, applications |
| Abstract |
We present a new, simple to manufacture superconducting single-photon detector operational in the range from ultraviolet to mid-infrared radiation wavelengths. The detector combines GHz counting rate, high quantum efficiency and very low level of dark (false) counts. At 1.3–1.5 μm wavelength range our detector exhibits a quantum efficiency of 5–10%. The detector photoresponse voltage pulse duration was measured to be about 150 ps with jitter of 35 ps and both of them were limited mostly by our measurement equipment. In terms of quantum efficiency, dark counts level, speed of operation the detector surpasses all semiconductor counterparts and was successfully applied for CMOS integrated circuits diagnostics. |
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0167-9317 |
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no |
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1511 |
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Zhang, J.; Pearlman, A.; Slysz, W.; Verevkin, A.; Sobolewski, R.; Wilsher, K.; Lo, W.; Okunev, O.; Korneev, A.; Kouminov, P.; Chulkova, G.; Gol’tsman, G. N. |
| Title |
A superconducting single-photon detector for CMOS IC probing |
Type |
Conference Article |
| Year |
2003 |
Publication |
Proc. 16-th LEOS |
Abbreviated Journal |
Proc. 16-th LEOS |
| Volume |
2 |
Issue |
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Pages |
602-603 |
| Keywords |
NbN SSPD, SNSPD |
| Abstract |
In this paper, a novel, time-resolved, NbN-based, superconducting single-photon detector (SSPD) has been developed for probing CMOS integrated circuits (ICs) using photon emission timing analysis (PETA). |
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The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003. |
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1510 |
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Rubtsova, I.; Korneev, A.; Matvienko, V.; Chulkova, G.; Milostnaya, I.; Goltsman, G.; Pearlman, A.; Slysz, W.; Verevkin, A.; Sobolewski, R. |
| Title |
Spectral sensitivity, quantum efficiency, and noise equivalent power of NbN superconducting single-photon detectors in the IR range |
Type |
Conference Article |
| Year |
2004 |
Publication |
Proc. 29th IRMMW / 12th THz |
Abbreviated Journal |
Proc. 29th IRMMW / 12th THz |
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Pages |
461-462 |
| Keywords |
NbN SSPD, SNSPD |
| Abstract |
We have developed nanostructured NbN superconducting single-photon detectors capable of GHz-rate photon counting in the 0.4 to 5 /spl mu/m wavelength range. Quantum efficiency of 30%, dark count rate 3/spl times/10/sup -4/ s/sup -1/, and NEP=10/sup -20/ W/Hz/sup -1/2/ have been measured at the 1.3-/spl mu/m wavelength for the device operating at 2.0 K. |
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no |
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1507 |
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Goltsman, G.; Korneev, A.; Izbenko, V.; Smirnov, K.; Kouminov, P.; Voronov, B.; Kaurova, N.; Verevkin, A.; Zhang, J.; Pearlman, A.; Slysz, W.; Sobolewski, R. |
| Title |
Nano-structured superconducting single-photon detectors |
Type |
Journal Article |
| Year |
2004 |
Publication |
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment |
Abbreviated Journal |
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| Volume |
520 |
Issue |
1-3 |
Pages |
527-529 |
| Keywords |
NbN SSPD, SNSPD |
| Abstract |
NbN detectors, formed into meander-type, 10×10-μm2 area structures, based on ultrathin (down to 3.5-nm thickness) and nanometer-width (down to below 100 nm) NbN films are capable of efficiently detecting and counting single photons from the ultraviolet to near-infrared optical wavelength range. Our best devices exhibit QE >15% in the visible range and ∼10% in the 1.3–1.5-μm infrared telecommunication window. The noise equivalent power (NEP) ranges from ∼10−17 W/Hz1/2 at 1.5 μm radiation to ∼10−19 W/Hz1/2 at 0.56 μm, and the dark counts are over two orders of magnitude lower than in any semiconducting competitors. The intrinsic response time is estimated to be <30 ps. Such ultrafast detector response enables a very high, GHz-rate real-time counting of single photons. Already established applications of NbN photon counters are non-invasive testing and debugging of VLSI Si CMOS circuits and quantum communications. |
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0168-9002 |
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1495 |
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