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Author (up) Bell, Matthew; Sergeev, Andrei; Goltsman, Gregory; Bird, Jonathan; Verevkin, Aleksandr url  openurl
  Title Transition-edge sensors based on superconducting nanowires Type Abstract
  Year 2006 Publication Proc. APS March Meeting Abbreviated Journal Proc. APS March Meeting  
  Volume Issue Pages B38.00001  
  Keywords NbN nanowire TES  
  Abstract We present our experimental study of superconducting NbN nanowire-based sensor. The responsivity of the sensor is strongly affected by the superconducting transition width of the nanostructure, which, in turn, is determined by the phase slip centers (PCSs) dynamics. The fluctuations and noise properties of the sensor are also discussed, as well as the devices' behavior at high magnetic fields. The ultimate performance of the sensor and prospects of the devices will be discussed, as well.  
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  Call Number Serial 1455  
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Author (up) Bennett, Douglas A.; Schmidt, Daniel R.; Swetz, Daniel S.; Ullom, Joel N. doi  openurl
  Title Phase-slip lines as a resistance mechanism in transition-edge sensors Type Journal Article
  Year 2014 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.  
  Volume 104 Issue Pages 042602  
  Keywords microbolometers, TES, phase-slip lines, PSL  
  Abstract The fundamental mechanism of resistance in voltage-biased superconducting films is poorly understood despite its importance as the basis of transition-edge sensors (TESs). TESs are utilized in state-of-the-art microbolometers and microcalorimeters covering a wide range of energies and applications. We present a model for the resistance of a TES based on phase-slip lines (PSLs) and compare the model to data. One of the model's predictions, discrete changes in the number of PSLs, is a possible explanation for the observed switching between discrete current states in localized regions of bias.  
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  Notes Recommended by Klapwijk Approved no  
  Call Number Serial 929  
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Author (up) Galeazzi, Massimiliano openurl 
  Title Fundamental noise processes in TES devices Type Journal Article
  Year 2011 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume 21 Issue 3 Pages 267-271  
  Keywords TES, Johnson noise, phonon noise, excess noise, flux-flow noise, thermal fluctuation noise  
  Abstract Microcalorimeters and bolometers are noise-limited devices, therefore, a proper understanding of all noise sources is essential to predict and interpret their performance. In this paper, I review the fundamental noise processes contributing to Transition Edge Sensor (TES) microcalorimeters and bolometers and their effect on device performance. In particular, I will start with a simple, monolithic device model, moving to a more complex one involving discrete components, to finally move to today's more realistic, comprehensive model. In addition to the basic noise contribution (equilibrium Johnson noise and phonon noise), TES are significantly affected by extra noise, which is commonly referred to as excess noise. Different fundamental processes have been proposed and investigated to explain the origin of this excess noise, in particular near equilibrium non-linear Johnson noise, flux-flow noise, and internal thermal fluctuation noise. Experimental evidence shows that all three processes are real and contribute, at different levels, to the TES noise, although different processes become important at different regimes. It is therefore time to discard the term “excess noise” and consider these terms part of the “fundamental noise processes” instead.  
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  Notes Recommended by Klapwijk Approved no  
  Call Number Serial 914  
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Author (up) Gershenzon, E. M.; Gol'tsman, G. N. url  openurl
  Title Transitions of electrons between excited states of donors in germanium Type Journal Article
  Year 1971 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 14 Issue 2 Pages 63-65  
  Keywords Ge, donors, excited states  
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  Notes Approved no  
  Call Number Serial 1740  
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Author (up) Gershenzon, E. M.; Goltsman, G. N.; Orlov, L. url  openurl
  Title Investigation of population and ionization of donor excited states in Ge Type Conference Article
  Year 1976 Publication Physics of Semiconductors Abbreviated Journal Physics of Semiconductors  
  Volume Issue Pages 631-634  
  Keywords Ge, donor excited states  
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  Address Amsterdam  
  Corporate Author Thesis  
  Publisher North-Holland Publishing Co. Place of Publication Editor  
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  Notes Approved no  
  Call Number Serial 1732  
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