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Author Baselmans, J. J. A.; Hajenius, M.; Gao, J. R.; Klapwijk, T. M.; de Korte, P. A. J.; Voronov, B.; Gol'tsman, G. doi  openurl
  Title Doubling of sensitivity and bandwidth in phonon cooled hot electron bolometer mixers Type Journal Article
  Year 2004 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.  
  Volume 84 Issue 11 Pages 1958-1960  
  Keywords NbN HEB mixers  
  Abstract We demonstrate that the performance of NbN lattice cooled hot electron bolometer mixers depends strongly on the interface quality between the bolometer and the contact structure. We show experimentally that both the receiver noise temperature and the gain bandwidth can be improved by more than a factor of 2 by cleaning the interface and adding an additional superconducting interlayer to the contact pad. Using this we obtain a double sideband receiver noise temperature TN,DSB=950 K

at 2.5 THz and 4.3 K, uncorrected for losses in the optics. At the same bias point, we obtain an IF gain bandwidth of 6 GHz.		  
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  Call Number Serial 352  
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Author Li, T. F.; Pashkin, Yu. A.; Astafiev, O.; Nakamura, Y.; Tsai, J. S.; Im, H. doi  openurl
  Title High-frequency metallic nanomechanical resonators Type Journal Article
  Year 2008 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.  
  Volume 92 Issue Pages 043112(1)-043112(3)  
  Keywords nanomechanical resonator, polycrystalline metal films  
  Abstract We developed a technology to fabricate fully metallic doubly clamped beams working as nanomechanical resonators. Measured with a magnetomotive detection scheme, the beams, made of polycrystalline metal films, show as good quality as previously reported ones made of single crystal materials, such as Si, GaAs, AlN, and SiC. Our method is compatible with the conventional fabrication process for nanoscale electronic circuits and thus offers a possibility of easily integrating the beams into superconducting charge and flux qubits and single-electron transistors as well as coupling them to coplanar waveguide resonators.  
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  Call Number Serial 621  
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Author Tretyakov, Ivan; Ryabchun, Sergey; Finkel, Matvey; Maslennikova, Anna; Kaurova, Natalia; Lobastova, Anastasia; Voronov, Boris; Gol'tsman, Gregory doi  openurl
  Title Low noise and wide bandwidth of NbN hot-electron bolometer mixers Type Journal Article
  Year 2011 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.  
  Volume 98 Issue Pages 033507 (1 to 3)  
  Keywords NbN HEB mixer  
  Abstract We report a record double sideband noise temperature of 600 K (5hν/kB) offered by a NbN hot-electron bolometer receiver at 2.5 THz. Allowing for standing wave effects, this value was found to be constant in the intermediate frequency range 1–7 GHz, which indicates that the mixer has an unprecedentedly large noise bandwidth in excess of 7 GHz. The insight into this is provided by gain bandwidth measurements performed at the superconducting transition. They show that the dependence of the bandwidth on the mixer length follows the model for an HEB mixer with diffusion and phonon cooling of the hot electrons.  
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  Call Number RPLAB @ gujma @ Serial 638  
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Author Kataoka, T; Kajikawa, K.; Kitagawa, J.; Kadoya, Y; Takemura, Y. openurl 
  Title Improved sensitivity of terahertz detection by GaAs photoconductive antennas excited at 1560 nm Type Journal Article
  Year 2010 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.  
  Volume 97 Issue Pages 201110 (1-3)  
  Keywords photoconductive antenna (PCA)  
  Abstract The terahertz detection by photoconductive antennas (PCAs) based on low-temperature grown (LTG) GaAs with 1.5 μm pulse excitation was revisited. We found that the detection efficiency can be improved by a factor of 10 (20 dB) by reducing the excitation spot size and the gap length of the PCA, maintaining the low noise feature of the PCA on LTG GaAs. As a result, the signal-to-noise ratio higher than 50 dB was obtained at a reasonable incident power of 9.5 mW, suggesting that the scheme is promising for the detection of terahertz waves in practical time domain systems.  
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  Call Number Serial 904  
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Author Gao, J. R.; Hovenier, J. N.; Yang, Z. Q.; Baselmans, J. J. A.; Baryshev, A.; Hajenius, M.; Klapwijk, T. M.; Adam, A. J. L.; Klaassen, T. O.; Williams, B. S.; Kumar, S.; Hu, Q.; Reno, J. L. openurl 
  Title Terahertz heterodyne receiver based on a quantum cascade laser and a superconducting bolometer Type Journal Article
  Year 2005 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.  
  Volume 86 Issue Pages 244104 (1 to 3)  
  Keywords HEB, QCL  
  Abstract We report the first demonstration of an all solid-stateheterodyne receiver that can be used for high-resolution spectroscopy above 2THz suitable for space-based observatories. The receiver uses a NbN superconducting hot-electron bolometer as mixer and a quantum cascade laser operating at 2.8THz as local oscillator. We measure a double sideband receiver noise temperature of 1400K at 2.8THz and 4.2K, and find that the free-running QCL has sufficient power stability for a practical receiver, demonstrating an unprecedented combination of sensitivity and stability.  
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  Call Number Serial 905  
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Author Yagoubov, P.; Kroug, M.; Merkel, H.; Kollberg, E.; Gol'tsman, G.; Svechnikov, S.; Gershenzon, E. url  doi
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  Title Noise temperature and local oscillator power requirement of NbN phonon-cooled hot electron bolometric mixers at terahertz frequencies Type Journal Article
  Year 1998 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.  
  Volume 73 Issue 19 Pages 2814-2816  
  Keywords NbN HEB mixers, noise temperature, local oscillator power  
  Abstract In this letter, the noise performance of NbN-based phonon-cooled hot electron bolometric quasioptical mixers is investigated in the 0.55–1.1 THz frequency range. The best results of the double-sideband <cd><2018>DSB<cd><2019> noise temperature are: 500 K at 640 GHz, 600 K at 750 GHz, 850 K at 910 GHz, and 1250 K at 1.1 THz. The water vapor in the signal path causes significant contribution to the measured receiver noise temperature around 1.1 THz. The devices are made from 3-nm-thick NbN film on high-resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are typically 0.2Ï«2 um. The amount of local oscillator power absorbed in the bolometer is less than 100 nW.  
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  Notes Approved no  
  Call Number Serial 911  
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Author Bennett, Douglas A.; Schmidt, Daniel R.; Swetz, Daniel S.; Ullom, Joel N. doi  openurl
  Title Phase-slip lines as a resistance mechanism in transition-edge sensors Type Journal Article
  Year 2014 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.  
  Volume 104 Issue Pages 042602  
  Keywords microbolometers, TES, phase-slip lines, PSL  
  Abstract The fundamental mechanism of resistance in voltage-biased superconducting films is poorly understood despite its importance as the basis of transition-edge sensors (TESs). TESs are utilized in state-of-the-art microbolometers and microcalorimeters covering a wide range of energies and applications. We present a model for the resistance of a TES based on phase-slip lines (PSLs) and compare the model to data. One of the model's predictions, discrete changes in the number of PSLs, is a possible explanation for the observed switching between discrete current states in localized regions of bias.  
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  Notes Recommended by Klapwijk Approved no  
  Call Number Serial 929  
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Author Swetz, D. S.; Bennett, D. A.; Irwin, K. D.; Schmidt, D. R.; Ullom, J. N. doi  openurl
  Title Current distribution and transition width in superconducting transition-edge sensors Type Journal Article
  Year 2012 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.  
  Volume 101 Issue Pages 242603  
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  Abstract Present models of the superconducting-to-normal transition in transition-edge sensors (TESs) do not describe the current distribution within a biased TES. This distribution is complicated by normal-metal features that are integral to TES design. We present a model with one free parameter that describes the evolution of the current distribution with bias. To probe the current distribution experimentally, we fabricated TES devices with different current return geometries. Devices where the current return geometry mirrors current flow within the device have sharper transitions, thus allowing for a direct test of the current-flow model.Measurements from these devices show that current meanders through a TES low in the resistivetransition but flows across the normal-metal features by 40% of the normal-state resistance. Comparison of transition sharpness between device designs reveals that self-induced magnetic fields play an important role in determining the width of the superconducting transition.  
  Address TES, current distribution  
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  Notes Recommended by Klapwijk Approved no  
  Call Number Serial 930  
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Author Miao, W.; Zhang, W.; Zhong, J. Q.; Shi, S. C.; Delorme, Y.; Lefevre, R.; Feret, A; Vacelet, T url  doi
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  Title Non-uniform absorption of terahertz radiation on superconducting hot electron bolometer microbridges Type Journal Article
  Year 2014 Publication Appl. Phys. Lett. Abbreviated Journal <ef><bf><bc>Appl. Phys. Lett.  
  Volume 104 Issue Pages 052605(1-4)  
  Keywords NbN HEB mixers, local oscillator power, RF nonuniform absorption  
  Abstract We interpret the experimental observation of a frequency-dependence of superconducting hot electron bolometer (HEB) mixers by taking into account the non-uniform absorption of the terahertz radiation on the superconducting HEB microbridge. The radiation absorption is assumed to be proportional to the local surface resistance of the HEB microbridge, which is computed using the Mattis-Bardeen theory. With this assumption the dc and mixing characteristics of a superconducting niobium-nitride (NbN) HEB device have been modeled at frequencies below and above the equilibrium gap frequency of the NbN film.  
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  Call Number Serial 935  
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Author Kardakova, A.; Finkel, M.; Morozov, D.; Kovalyuk, V.; An, P.; Dunscombe, C.; Tarkhov, M.; Mauskopf, P.; Klapwijk, T.M.; Goltsman, G. doi  openurl
  Title The electron-phonon relaxation time in thin superconducting titanium nitride films Type Journal Article
  Year 2013 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.  
  Volume 103 Issue 25 Pages 252602 (1 to 4)  
  Keywords disordered TiN films, electron-phonon relaxation time  
  Abstract We report on the direct measurement of the electron-phonon relaxation time, τeph, in disordered TiN films. Measured values of τeph are from 5.5 ns to 88 ns in the 4.2 to 1.7 K temperature range and consistent with a T−3 temperature dependence. The electronic density of states at the Fermi level N0 is estimated from measured material parameters. The presented results confirm that thin TiN films are promising candidate-materials for ultrasensitive superconducting detectors.

The work was supported by the Ministry of Education and Science of the Russian Federation, Contract No. 14.B25.31.0007 and by the RFBR Grant No. 13-02-91159.		  
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  Notes Approved no  
  Call Number RPLAB @ kovalyuk @ Serial 941  
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