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| Author | Rasulova, G. K.; Brunkov, P. N.; Pentin, I. V.; Egorov, A. Y.; Knyazev, D. A.; Andrianov, A. V.; Zakhar’in, A. O.; Konnikov, S. G.; Gol’tsman, G. N. | ||||
| Title | A weakly coupled semiconductor superlattice as a potential for a radio frequency modulated terahertz light emitter | Type | Journal Article | ||
Year  |
2012 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 100 | Issue | 13 | Pages | 131104 (1 to 4) |
| Keywords | semiconductor superlattice | ||||
| Abstract | The bolometer response to THz radiation from a weakly coupled GaAs/AlGaAs superlattice biased in the self-oscillations regime has been observed. The bolometer signal is modulated with the frequency equal to the fundamental frequency of superlattice self-oscillations. The frequency spectrum of the bolometer signal contains higher harmonics whose frequency is a multiple of fundamental frequency of self-oscillations. This work was supported by State Contracts Nos. 16.740.11.0044 and 16.552.11.7002 of Ministry of Education and Science of the Russian Federation. Structural characterization was made on the equipment of the Joint Research Centre «Material science and characterization in advanced technology» (Ioffe Institute, St. Petersburg, Russia). |
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| Language | Summary Language | Original Title | |||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0003-6951 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1379 | |||
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| Author | Kardakova, A.; Finkel, M.; Morozov, D.; Kovalyuk, V.; An, P.; Dunscombe, C.; Tarkhov, M.; Mauskopf, P.; Klapwijk, T.M.; Goltsman, G. | ||||
| Title | The electron-phonon relaxation time in thin superconducting titanium nitride films | Type | Journal Article | ||
| Year |
2013 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 103 | Issue | 25 | Pages | 252602 (1 to 4) |
| Keywords | disordered TiN films, electron-phonon relaxation time | ||||
| Abstract | We report on the direct measurement of the electron-phonon relaxation time, τeph, in disordered TiN films. Measured values of τeph are from 5.5 ns to 88 ns in the 4.2 to 1.7 K temperature range and consistent with a T−3 temperature dependence. The electronic density of states at the Fermi level N0 is estimated from measured material parameters. The presented results confirm that thin TiN films are promising candidate-materials for ultrasensitive superconducting detectors. The work was supported by the Ministry of Education and Science of the Russian Federation, Contract No. 14.B25.31.0007 and by the RFBR Grant No. 13-02-91159. |
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| Notes | Approved | no | |||
| Call Number | RPLAB @ kovalyuk @ | Serial | 941 | ||
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| Author | Fedorov, G.; Kardakova, A.; Gayduchenko, I.; Charayev, I.; Voronov, B.M.; Finkel, M.; Klapwijk, T.M.; Morozov, S.; Presniakov, M.; Bobrinetskiy, I.; Ibragimov, R.; Goltsman, G. | ||||
| Title | Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-terahertz radiation | Type | Journal Article | ||
| Year |
2013 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 103 | Issue | 18 | Pages | 181121 (1 to 5) |
| Keywords | carbon nanotubes, CNT, THz radiation, SiO2 substrate | ||||
| Abstract | We report on the voltage response of carbon nanotube devices to sub-terahertz (THz) radiation. The devices contain carbon nanotubes (CNTs), which are over their length partially suspended and partially Van der Waals bonded to a SiO2 substrate, causing a difference in thermal contact. We observe a DC voltage upon exposure to 140 GHz radiation. Based on the observed gate voltage and power dependence, at different temperatures, we argue that the observed signal is both thermal and photovoltaic. The room temperature responsivity in the microwave to THz range exceeds that of CNT based devices reported before. Authors thank Professor P. Barbara for providing the catalyst for CNT growth and Dr. N. Chumakov and V. Rylkov for stimulating discussions. The work was supported by the RFBR (Grant No. 12-02-01291-a) and by the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007). G.F. acknowledges support of the RFBR grant 12-02-01005-a. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0003-6951 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1171 | |||
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| Author | Bennett, Douglas A.; Schmidt, Daniel R.; Swetz, Daniel S.; Ullom, Joel N. | ||||
| Title | Phase-slip lines as a resistance mechanism in transition-edge sensors | Type | Journal Article | ||
| Year |
2014 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 104 | Issue | Pages | 042602 | |
| Keywords | microbolometers, TES, phase-slip lines, PSL | ||||
| Abstract | The fundamental mechanism of resistance in voltage-biased superconducting films is poorly understood despite its importance as the basis of transition-edge sensors (TESs). TESs are utilized in state-of-the-art microbolometers and microcalorimeters covering a wide range of energies and applications. We present a model for the resistance of a TES based on phase-slip lines (PSLs) and compare the model to data. One of the model's predictions, discrete changes in the number of PSLs, is a possible explanation for the observed switching between discrete current states in localized regions of bias. | ||||
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| Area | Expedition | Conference | |||
| Notes | Recommended by Klapwijk | Approved | no | ||
| Call Number | Serial | 929 | |||
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| Author | Miao, W.; Zhang, W.; Zhong, J. Q.; Shi, S. C.; Delorme, Y.; Lefevre, R.; Feret, A; Vacelet, T | ||||
| Title | Non-uniform absorption of terahertz radiation on superconducting hot electron bolometer microbridges | Type | Journal Article | ||
| Year |
2014 | Publication | Appl. Phys. Lett. | Abbreviated Journal | <ef><bf><bc>Appl. Phys. Lett. |
| Volume | 104 | Issue | Pages | 052605(1-4) | |
| Keywords | NbN HEB mixers, local oscillator power, RF nonuniform absorption | ||||
| Abstract | We interpret the experimental observation of a frequency-dependence of superconducting hot electron bolometer (HEB) mixers by taking into account the non-uniform absorption of the terahertz radiation on the superconducting HEB microbridge. The radiation absorption is assumed to be proportional to the local surface resistance of the HEB microbridge, which is computed using the Mattis-Bardeen theory. With this assumption the dc and mixing characteristics of a superconducting niobium-nitride (NbN) HEB device have been modeled at frequencies below and above the equilibrium gap frequency of the NbN film. | ||||
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| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 935 | |||
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