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Gershenzon, E. M.; Gol'tsman, G. N.; Emtsev, V. V.; Mashovets, T. V.; Ptitsyna, N. G.; Ryvkin, S. M. |
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Title |
Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium |
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Year |
1971 |
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JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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14 |
Issue |
6 |
Pages |
241 |
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Keywords |
Ge, gamma irradiation, defects, impurities |
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1742 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Karasik, B. S.; Semenov, A. D. |
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Title |
Measurement of the energy gap in the compound YBaCu3O9-δ on the basis of the IR absorption spectrum |
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Year |
1987 |
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JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume |
46 |
Issue |
5 |
Pages |
237-238 |
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Keywords |
YBCO HTS detectors |
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Abstract |
For the first time the long-wave infrared absorption spectrum has been measured by means of the bolometric effect and energy gap for high-temperature superconducting ceramics YBa/sub 2/Cu/sub 3/O/sub 9-delta/ has been determined from absorption threshold. 2delta/kT/sub c/ value is equal to 0.6. |
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1703 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P. |
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Title |
Binding energy of a carrier with a neutral impurity atom in germanium and in silicon |
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Journal Article |
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Year |
1971 |
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JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume |
14 |
Issue |
5 |
Pages |
185-186 |
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Keywords |
Ge, Si, neutral impurity atom, binding energy |
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1739 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
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Title |
Cross section for binding of free carriers into excitons in germanium |
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Year |
1981 |
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JETP Lett. |
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JETP Lett. |
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Volume |
33 |
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11 |
Pages |
574 |
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Ge, excitons, photoconductivity |
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1718 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
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Title |
Observation of the free-exciton spectrum at submillimeter wavelengths |
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Journal Article |
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Year |
1972 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume |
16 |
Issue |
4 |
Pages |
161-162 |
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Keywords |
Ge, energy spectrum, free excitons |
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1736 |
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