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Verevkin, A. I.; Ptitsina, N. G.; Chulkova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. |
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Electron energy relaxation in a 2D channel in AlGaAs-GaAs heterostructures under quasiequilibrium conditions at low temperatures |
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1995 |
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JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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61 |
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7 |
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591-595 |
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2DEG, AlGaAs/GaAs heterostructures |
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The energy relaxation time of 2D electrons, Te, has been measured under quasiequilibrium conditions in AlGaAs—GaAs heterojunctions over the temperature range T= 1.5—20 K. At T> 4 K, Te depends only weakly on the temperature, while at T< 4 K 7;'(T) there is a dependence fr; lNT. A linear dependence 7: 1 (T) in the Bloch—-Grfineisen temperature region (T< 5 K) is unambiguous evidence that a piezoacoustic mechanism of an electron—phonon interaction is predominant in the inelastic scattering of electrons. The values of T6 in this temperature range agree very accurately with theoretical results reported by Karpus [Sov. Phys. Semicond. 22 (1988)]. At higher temperatures, where scat—tering by deformation acoustic phonons becomes substantial, there is a significant discrepancy between the experimental and theoretical re-sults. |
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1624 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
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Title |
Cross section for binding of free carriers into excitons in germanium |
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Journal Article |
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1981 |
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JETP Lett. |
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JETP Lett. |
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33 |
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11 |
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574 |
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Keywords |
Ge, excitons, photoconductivity |
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1718 |
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Gershenzon, E.M.; Gol'tsman, G.N.; Ptitsyna, N. G. |
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Title |
Carrier lifetime in excited states of shallow impurities in germanium |
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1977 |
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JETP Lett. |
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JETP Lett. |
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25 |
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12 |
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539-543 |
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Ge, shallow impurities, excited states |
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1726 |
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Gol’tsman, G. N.; Smirnov, K. V. |
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Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures |
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2001 |
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Jetp Lett. |
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Jetp Lett. |
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74 |
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9 |
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474-479 |
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2DEG, AlGaAs/GaAs heterostructures |
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Theoretical and experimental works devoted to studying electron-phonon interaction in the two-dimensional electron gas of semiconductor heterostructures at low temperatures in the case of strong heating in an electric field under quasi-equilibrium conditions and in a quantizing magnetic field perpendicular to the 2D layer are considered. |
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0021-3640 |
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По итогам проектов российского фонда фундаментальных исследований. Проект РФФИ # 98-02-16897 Электрон-фононное взаимодействие в двумерном электронном газе полупроводниковых гетероструктур при низких температурах |
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1541 |
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Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. |
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Title |
Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K |
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1996 |
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JETP Lett. |
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JETP Lett. |
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64 |
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5 |
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404-409 |
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2DEG, AlGaAs/GaAs heterostructures |
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The temperature dependence of the energy relaxation time τe (T) of a two-dimensional electron gas at an AlGaAs/GaAs heterointerface is measured under quasiequilibrium conditions in the region of the transition from scattering by acoustic phonons to scattering with the participation of optical phonons. The temperature interval of constant τe, where scattering by the deformation potential predominates, is determined. In the preceding, low-temperature region, where piezoacoustic and deformation-potential-induced scattering processes coexist, τ e decreases slowly with increasing temperature. Optical phonons start to participate in the scattering processes at T∼25 K (the characteristic phonon lifetime was equal to τLOτ4.5 ps). The energy losses calculated from the τe data in a model with an effective nonequilibrium electron temperature agree with the published data obtained under strong heating conditions. |
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0021-3640 |
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http://jetpletters.ru/ps/981/article_14955.shtml (“Прямые измерения времен энергетической релаксации на гетерогранице AlGaAs/GaAs в диапазоне 4.2 – 50 К”) |
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1608 |
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