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Author  |
Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I. | ||||
| Title | Concentration dependence of the intermediate frequency bandwidth of submillimeter heterodyne AlGaAs/GaAs nanostructures | Type | Journal Article | ||
| Year | 2010 | Publication | Bull. Russ. Acad. Sci. Phys. | Abbreviated Journal | Bull. Russ. Acad. Sci. Phys. |
| Volume | 74 | Issue | 1 | Pages | 100-102 |
| Keywords | 2DEG AlGaAs/GaAs heterostructures, THz heterodyne detectors, IF bandwidth | ||||
| Abstract | The concentration dependence of the intermediate frequency bandwidth of heterodyne AlGaAs/GaAs detectors with 2D electron gas is measured using submillimeter spectroscopy with high time resolution at T= 4.2 K. The intermediate frequency bandwidth f3dBfalls from 245 to 145 MHz with increasing concentration of 2D electrons n s = (1.6-6.6) × 10[su11] cm-2. The dependence f3dB ≈ n s – 0.04±is observed in the studied concentration range; this dependence is determined by electron scattering by the deformation potential of acoustic phonons and piezoelectric scattering. | ||||
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| ISSN | 1062-8738 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1217 | |||
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