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Author |
Elmanov, Ilia; Elmanova, Anna; Kovalyuk, Vadim; An, Pavel; Goltsman, Gregory |
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Title |
Silicon nitride photonic crystal cavity coupled with NV-centers in nanodiamonds |
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Conference Article |
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Year |
2020 |
Publication |
Proc. 32-nd EMSS |
Abbreviated Journal |
Proc. 32-nd EMSS |
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Pages |
344-348 |
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Abstract |
The development of integrated quantum photonics requires a high efficient excitation and coupling of a single photon source with on-chip devices. In this paper, we show our results of modelling for high-Q photonic crystal cavity, optimized for zero phonon line emission of NV-centers in nanodiamonds. Modelling was performed for the silicon nitride platform and obtained a quality factor equals to 6136 at 637 nm wavelength. |
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NV-centers, nanodiamonds |
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2724-0029 |
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978-88-85741-44-7 |
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32nd European Modeling & Simulation Symposium |
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1840 |
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Author |
Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. |
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Title |
Silicon room temperature IR detectors coated with Ag2S quantum dots |
Type |
Conference Article |
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Year |
2019 |
Publication |
Proc. IWQO |
Abbreviated Journal |
Proc. IWQO |
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Pages |
369-371 |
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Keywords |
silicon detector, quantum dot, IR, surface states |
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Abstract |
For decades silicon has been the chief technological semiconducting material of modern microelectronics. Application of silicon detectors in optoelectronic devices are limited to the visible and near infrared ranges, due to their transparency for radiation with a wavelength higher than 1.1 μm. The expansion Si absorption towards longer wave lengths is a considerable interest to optoelectronic applications. In this work we present an elegant and effective solution to this problem using Ag2S quantum dots, creating impurity states in Si to cause sub-band gap photon absorption. The sensitivity of room temperature zero-bias Si_Ag2S detectors, which we obtained is 1011 cmHzW . Given the variety of QDs parameters such as: material, dimensions, our results open a path towards the future study and development of Si detectors for technological applications. |
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978-5-89513-451-1 |
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1154 |
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Author |
Romanov, N. R.; Zolotov, P. I.; Smirnov, K. V. |
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Title |
Development of disordered ultra-thin superconducting vanadium nitride films |
Type |
Conference Article |
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Year |
2019 |
Publication |
Proc. 8th Int. Conf. Photonics and Information Optics |
Abbreviated Journal |
Proc. 8th Int. Conf. Photonics and Information Optics |
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Pages |
425-426 |
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Keywords |
VN films |
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We present the results of development and research of superconducting vanadium nitride VN films ~10 nm thick having different level of disorder. It is showed that both silicon substrate temperature T sub in process of magnetron sputtering and total gas pressure P affect superconducting transition temperature of sputtered films and R 300 /R 20 ratio defining their level of disorder. VN films suitable for development of superconducting single-photon detectors on their basis are obtained. |
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Russian |
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978-5-7262-2536-4 |
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http://fioconf.mephi.ru/files/2018/12/FIO2019-Sbornik.pdf |
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1802 |
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Author |
Moshkova, M. A.; Divochiy, A. V.; Morozov, P. V.; Antipov, A. V.; Vakhtomin, Yu. B.; Smirnov, K. V. |
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Title |
Characterization of topologies of superconducting photon number resolving detectors |
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Conference Article |
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Year |
2019 |
Publication |
Proc. 8th Int. Conf. Photonics and Information Optics |
Abbreviated Journal |
Proc. 8th Int. Conf. Photonics and Information Optics |
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Pages |
465-466 |
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Keywords |
PNR SSPD |
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Abstract |
Comparative analysis for different topologies of superconducting single-photon detectors with ability to resolve up to 4 photons in a short pulse of IR radiation has been carry out. It was developed the detector with a system detection efficiency of ~ 85 % at λ = 1550 nm. The possibility of using such detector to restore photon statistics of a pulsed radiation source was demonstrated. |
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Russian |
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978-5-7262-2536-4 |
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http://fioconf.mephi.ru/files/2018/12/FIO2019-Sbornik.pdf |
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1803 |
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Author |
Мошкова, М. А.; Дивочий, А. В.; Морозов, П. В.; Золотов, Ф. И.; Вахтомин, Ю. Б.; Смирнов, К. В. |
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Title |
Высокоэффективные NBN однофотонные детекторы с разрешением числа фотонов |
Type |
Conference Article |
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Year |
2018 |
Publication |
Сборн. науч. труд. VII международн. конф. по фотонике и информац. опт. |
Abbreviated Journal |
Сборн. науч. труд. VII международн. конф. по фотонике и информац. опт. |
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Pages |
400-401 |
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Keywords |
SSPD, SNSPD |
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Abstract |
Разработаны и исследованы сверхпроводниковые однофотонные детекторы, способные к разрешению до 3-х фотонов в коротком импульсе излучения и имеющие квантовую эффективность детектирования одиночных фотонов ~60% на длине волны lambda=1.55 мкм. Проведенная модернизация технологии изготовления детекторов, позволила получить приемные устройства с мультифотонной квантовой эффективностью, приближающейся к расчетным значениям. |
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Russian |
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978-5-7262-2445-9 |
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Notes |
УДК 535(06)+004(06) |
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1250 |
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