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Tinkham, M.; Free, J. U.; Lau, C. N.; Markovic, N. |
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Title |
Hysteretic I–V curves of superconducting nanowires |
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2003 |
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Phys. Rev. B |
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68 |
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134515(1 to 7) |
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MoGe nanowires, self-heating effect |
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Experimental I–V curves of superconducting MoGe nanowires show hysteresis for the thicker wires and none for the thinner wires. A rather quantitative account of these data for representative wires is obtained by numerically solving the one-dimensional heat flow equation to find a self-consistent distribution of temperature and local resistivity along the wire, using the measured linear resistance R(T) as input. This suggests that the retrapping current in the hysteretic I–V curves is primarily determined by heating effects, and not by the dynamics of phase motion in a tilted washboard potential as often assumed. Heating effects and thermal fluctuations from the low-resistance state to a high-resistance, quasinormal regime appear to set independent upper bounds for the switching current. |
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918 |
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Zhang, J.; Słysz, W.; Pearlman, A.; Verevkin, A.; Sobolewski, R.; Okunev, O.; Chulkova, G.; Gol’tsman, G. N. |
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Title |
Time delay of resistive-state formation in superconducting stripes excited by single optical photons |
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Journal Article |
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2003 |
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Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
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Volume |
67 |
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13 |
Pages |
132508 (1 to 4) |
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Keywords |
NbN SSPD, SNSPD |
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We have observed a 65(±5)-ps time delay in the onset of a resistive-state formation in 10-nm-thick, 130-nm-wide NbN superconducting stripes exposed to single photons. The delay in the photoresponse decreased to zero when the stripe was irradiated by multi-photon (classical) optical pulses. Our NbN structures were kept at 4.2 K, well below the material’s critical temperature, and were illuminated by 100-fs-wide optical pulses. The time-delay phenomenon has been explained within the framework of a model based on photon-induced generation of a hotspot in the superconducting stripe and subsequent, supercurrent-assisted, resistive-state formation across the entire stripe cross section. The measured time delays in both the single-photon and two-photon detection regimes agree well with theoretical predictions of the resistive-state dynamics in one-dimensional superconducting stripes. |
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0163-1829 |
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1519 |
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Anthore, A.; Pothier, H.; Esteve, D. |
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Title |
Density of states in a superconductor carrying a supercurrent |
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2003 |
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Phys. Rev. Lett. |
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Phys. Rev. Lett. |
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90 |
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12 |
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127001 (1 to 4) |
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Keywords |
Usadel, superconducting nanowire |
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We have measured the tunneling density of states (DOS) in a superconductor carrying a supercurrent or exposed to an external magnetic field. The pair correlations are weakened by the supercurrent, leading to a modification of the DOS and to a reduction of the gap. As predicted by the theory of superconductivity in diffusive metals, we find that this effect is similar to that of an external magnetic field. |
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Recommended by Klapwijk |
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924 |
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Benford, Dominic J.; Gaidis, Michael C.; Kooi, Jacob W. |
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Title |
Optical properties of Zitex in the infrared to submillimeter |
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2003 |
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Applied Optics |
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Appl. Opt. |
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42 |
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25 |
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5118 |
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0003-6935 |
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440 |
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Semenov, A.; Richter, H.; Hübers, H.-W.; Smirnov, K.; Voronov, B.; Gol'tsman, G. |
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Development of terahertz superconducting hot-electron bolometer mixers |
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Conference Article |
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2003 |
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Proc. 6th European Conf. Appl. Supercond. |
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Proc. 6th European Conf. Appl. Supercond. |
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181 |
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2960-2965 |
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NbN HEB mixers |
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We present recent results of the development of phonon cooled hot-electron bolometric (HEB) mixers for airborne and balloon borne terahertz heterodyne receivers. Three iomportant issues have been addresses: the quality of NbN films the HEB mixers were made from, the spectral properties of the HEB mixers and the local oscillator power required for optical operation. Studies with an atomic force microscope indicate, that the performance of the HEB mixer might have been effected by the microstructure of the NbN film. Antenna gain and noise temperature were investigated at terahertz frequencies for a HEB embedded in either log-spiral or twin-slot feed antenna. Comparison suggests that at frequencies above 3 THz the spiral feed provides better overall performance. At 1.6 THz, a power of 2.5 µW was required from the local oscillator for optimal operation of the HEB mixer. |
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Sorrento, Italy |
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0750309814, 978-0750309813 |
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1505 |
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Hirata, A.; Harada, M.; Nagatsuma, T. |
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120-GHz wireless link using photonic techniques for generation, modulation, and emission of millimeter-wave signals |
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Journal Article |
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2003 |
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J. of Lightwave Technology |
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21 |
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10 |
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2145-2153 |
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Keywords |
subterahartz terahertz THz communications |
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We present a wireless link system that uses millimeter-wave (MMW) photonic techniques. The photonic transmitter in the wireless link consists of an optical 120-GHz MMW generator, an optical modulator, and a high-power photonic MMW emitter. A uni-traveling carrier photodiode (UTC-PD) was used as the photonic emitter in order to eliminate electronic MMW amplifiers. We evaluated the dependence of UTC-PD output power on its transit-time limited bandwidth and its CR-time constant limited bandwidth, and employed a UTC-PD with the highest output power for the photonic emitter. As for the MMW generation, we developed a 120-GHz optical MMW generator that generates a pulse train and one that generates a sinusoidal signal. The UTC-PD output power generated by a narrow pulse train was higher than that generated by sinusoidal signals under the same average optical power condition, which contributes to reducing the photocurrent of the photonic emitter. We have experimentally demonstrated that the photonic transmitter can transmit data at up to 3.0 Gb/s. The wireless link using the photonic transmitter can be applied to optical gigabit Ethernet signals. |
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592 |
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Zwiller, V.; Aichele, T.; Seifert, W.; Persson, J.; Benson, O. |
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Generating visible single photons on demand with single InP quantum dots |
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Journal Article |
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2003 |
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Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
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Volume |
82 |
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10 |
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1509-1511 |
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single photon, quantum dot, InP |
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0003-6951 |
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503 |
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Sobolewski, R.; Verevkin, A.; Gol'tsman, G.N.; Lipatov, A.; Wilsher, K. |
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Ultrafast superconducting single-photon optical detectors and their applications |
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2003 |
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IEEE Trans. Appl. Supercond. |
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13 |
Issue |
2 |
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1151-1157 |
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NbN SSPD, SNSPD |
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We present a new class of ultrafast single-photon detectors for counting both visible and infrared photons. The detection mechanism is based on photon-induced hotspot formation, which forces the supercurrent redistribution and leads to the appearance of a transient resistive barrier across an ultrathin, submicrometer-width, superconducting stripe. The devices were fabricated from 3.5-nm- and 10-nm-thick NbN films, patterned into <200-nm-wide stripes in the 4 /spl times/ 4-/spl mu/m/sup 2/ or 10 /spl times/ 10-/spl mu/m/sup 2/ meander-type geometry, and operated at 4.2 K, well below the NbN critical temperature (T/sub c/=10-11 K). Continuous-wave and pulsed-laser optical sources in the 400-nm-to 3500-nm-wavelength range were used to determine the detector performance in the photon-counting mode. Experimental quantum efficiency was found to exponentially depend on the photon wavelength, and for our best, 3.5-nm-thick, 100-/spl mu/m/sup 2/-area devices varied from >10% for 405-nm radiation to 3.5% for 1550-nm photons. The detector response time and jitter were /spl sim/100 ps and 35 ps, respectively, and were acquisition system limited. The dark counts were below 0.01 per second at optimal biasing. In terms of the counting rate, jitter, and dark counts, the NbN single-photon detectors significantly outperform their semiconductor counterparts. Already-identified applications for our devices range from noncontact testing of semiconductor CMOS VLSI circuits to free-space quantum cryptography and communications. |
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1051-8223 |
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509 |
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Amato, Michael J.; Benford, Dominic J.; Moseley, Harvey S.; Juan Roman |
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An engineering concept and enabling technologies for a large single aperture far-infrared observatory (SAFIR) |
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2003 |
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Proc. SPIE |
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4850 |
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1120-1131 |
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RPLAB @ s @ sun_shield_SAFIR_SPIE_2003 |
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339 |
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Zhang, J.; Boiadjieva, N.; Chulkova, G.; Deslandes, H.; Gol'tsman, G. N.; Korneev, A.; Kouminov, P.; Leibowitz, M.; Lo, W.; Malinsky, R.; Okunev, O.; Pearlman, A.; Slysz, W.; Smirnov, K.; Tsao, C.; Verevkin, A.; Voronov, B.; Wilsher, K.; Sobolewski, R. |
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Noninvasive CMOS circuit testing with NbN superconducting single-photon detectors |
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2003 |
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Electron. Lett. |
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Electron. Lett. |
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39 |
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14 |
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1086-1088 |
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NbN SSPD, SNSPD, applications |
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The 3.5 nm thick-film, meander-structured NbN superconducting single-photon detectors have been implemented in the CMOS circuit-testing system based on the detection of near-infrared photon emission from switching transistors and have significantly improved the performance of the system. Photon emissions from both p- and n-MOS transistors have been observed. |
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0013-5194 |
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