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Hirata, A.; Harada, M.; Nagatsuma, T. |
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120-GHz wireless link using photonic techniques for generation, modulation, and emission of millimeter-wave signals |
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2003 |
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J. of Lightwave Technology |
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21 |
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10 |
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2145-2153 |
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subterahartz terahertz THz communications |
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We present a wireless link system that uses millimeter-wave (MMW) photonic techniques. The photonic transmitter in the wireless link consists of an optical 120-GHz MMW generator, an optical modulator, and a high-power photonic MMW emitter. A uni-traveling carrier photodiode (UTC-PD) was used as the photonic emitter in order to eliminate electronic MMW amplifiers. We evaluated the dependence of UTC-PD output power on its transit-time limited bandwidth and its CR-time constant limited bandwidth, and employed a UTC-PD with the highest output power for the photonic emitter. As for the MMW generation, we developed a 120-GHz optical MMW generator that generates a pulse train and one that generates a sinusoidal signal. The UTC-PD output power generated by a narrow pulse train was higher than that generated by sinusoidal signals under the same average optical power condition, which contributes to reducing the photocurrent of the photonic emitter. We have experimentally demonstrated that the photonic transmitter can transmit data at up to 3.0 Gb/s. The wireless link using the photonic transmitter can be applied to optical gigabit Ethernet signals. |
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592 |
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Zwiller, V.; Aichele, T.; Seifert, W.; Persson, J.; Benson, O. |
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Generating visible single photons on demand with single InP quantum dots |
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2003 |
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Applied Physics Letters |
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Appl. Phys. Lett. |
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82 |
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10 |
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1509-1511 |
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single photon, quantum dot, InP |
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0003-6951 |
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503 |
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Sobolewski, R.; Verevkin, A.; Gol'tsman, G.N.; Lipatov, A.; Wilsher, K. |
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Ultrafast superconducting single-photon optical detectors and their applications |
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2003 |
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IEEE Trans. Appl. Supercond. |
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13 |
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2 |
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1151-1157 |
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NbN SSPD, SNSPD |
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We present a new class of ultrafast single-photon detectors for counting both visible and infrared photons. The detection mechanism is based on photon-induced hotspot formation, which forces the supercurrent redistribution and leads to the appearance of a transient resistive barrier across an ultrathin, submicrometer-width, superconducting stripe. The devices were fabricated from 3.5-nm- and 10-nm-thick NbN films, patterned into <200-nm-wide stripes in the 4 /spl times/ 4-/spl mu/m/sup 2/ or 10 /spl times/ 10-/spl mu/m/sup 2/ meander-type geometry, and operated at 4.2 K, well below the NbN critical temperature (T/sub c/=10-11 K). Continuous-wave and pulsed-laser optical sources in the 400-nm-to 3500-nm-wavelength range were used to determine the detector performance in the photon-counting mode. Experimental quantum efficiency was found to exponentially depend on the photon wavelength, and for our best, 3.5-nm-thick, 100-/spl mu/m/sup 2/-area devices varied from >10% for 405-nm radiation to 3.5% for 1550-nm photons. The detector response time and jitter were /spl sim/100 ps and 35 ps, respectively, and were acquisition system limited. The dark counts were below 0.01 per second at optimal biasing. In terms of the counting rate, jitter, and dark counts, the NbN single-photon detectors significantly outperform their semiconductor counterparts. Already-identified applications for our devices range from noncontact testing of semiconductor CMOS VLSI circuits to free-space quantum cryptography and communications. |
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1051-8223 |
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509 |
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Amato, Michael J.; Benford, Dominic J.; Moseley, Harvey S.; Juan Roman |
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An engineering concept and enabling technologies for a large single aperture far-infrared observatory (SAFIR) |
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2003 |
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Proc. SPIE |
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4850 |
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1120-1131 |
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RPLAB @ s @ sun_shield_SAFIR_SPIE_2003 |
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339 |
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Zhang, J.; Boiadjieva, N.; Chulkova, G.; Deslandes, H.; Gol'tsman, G. N.; Korneev, A.; Kouminov, P.; Leibowitz, M.; Lo, W.; Malinsky, R.; Okunev, O.; Pearlman, A.; Slysz, W.; Smirnov, K.; Tsao, C.; Verevkin, A.; Voronov, B.; Wilsher, K.; Sobolewski, R. |
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Noninvasive CMOS circuit testing with NbN superconducting single-photon detectors |
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2003 |
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Electron. Lett. |
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Electron. Lett. |
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39 |
Issue |
14 |
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1086-1088 |
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Keywords |
NbN SSPD, SNSPD, applications |
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The 3.5 nm thick-film, meander-structured NbN superconducting single-photon detectors have been implemented in the CMOS circuit-testing system based on the detection of near-infrared photon emission from switching transistors and have significantly improved the performance of the system. Photon emissions from both p- and n-MOS transistors have been observed. |
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0013-5194 |
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1512 |
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