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Doi, Y.; Wang, Z.; Ueda, T.; Nickels, P.; Komiyama, S.; Patrashin, M.; Hosako, I.; Matsuura, S.; Shirahata, M.; Sawayama, Y.; Kawada, M. |
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Title |
CSIP – a novel photon-counting detector applicable for the SPICA far-infrared instrument |
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2009 |
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SPICA |
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SPICA |
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SPICA Workshop 2009 |
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detectors; Infrared |
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We describe a novel GaAs/AlGaAs double-quantumwell device for the infrared photon detection, called ChargeSensitive Infrared Phototransistor (CSIP). The principle of CSIP detector is the photo-excitation of an intersubband transition in a QW as an charge integrating gate and the signal ampli<ef><ac><81>cation by another QW as a channel with very high gain, which provides us with extremely high responsivity (104 – 106 A/W). It has been demonstrated that the CSIP designed for the mid-infrared wavelength (14.7 μm) has an excellent sensitivity; the noise equivalent power (NEP) of 7 × 10-19 W/ with the quantum effciency of ~ 2%. Advantages of the CSIP against the other highly sensitive detectors are, huge dynamic range of > 106, low output impedance of 103 – 104 Ohms, and relatively high operation temperature (> 2 K). We discuss possible applications of the CSIP to FIR photon detection covering 35 – 60 μm waveband, which is a gap uncovered with presently available photoconductors. |
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RPLAB @ gujma @ |
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672 |
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Cao, Q.; Yoon, S. F.; Tong, C. Z.; Ngo, C. Y.; Liu, C. Y.; Wang, R.; Zhao, H. X. |
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Title |
Two-state competition in 1.3 μm multilayer InAs/InGaAs quantum dot lasers |
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2009 |
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Applied Physics Letters |
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Appl. Phys. Lett. |
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95 |
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19 |
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3 |
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2DEG |
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The competition of ground state (GS) and excited state (ES) is investigated from the as-grown and thermally annealed 1.3 μm ten-layer p-doped InAs/GaAs quantum dot (QD) lasers. The modal gain competition between GS and ES are measured and analyzed around the ES threshold characteristics. Our results show that two-state competition is more significant in devices with short cavity length operating at high temperature. By comparing the as-grown and annealed devices, we demonstrate enhanced GS and suppressed ES lasing from the QD laser annealed at 600 °C for 15 s. |
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673 |
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Driessen, Eduard Frans Clemens |
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Coupling light to periodic nanostructures |
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2009 |
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Faculty of Science, Leiden University |
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Fac. Scien., Leiden Un. |
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144 |
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SSPD |
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Issue Date: 2009-09-24 |
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675 |
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Wang, Zhen; Miki, S.; Fujiwara, M. |
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Superconducting nanowire single-photon detectors for quantum information and communications |
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2009 |
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IEEE J. Sel. Topics Quantum Electron. |
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15 |
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6 |
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1741-1747 |
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SSPD |
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Superconducting nanowire single-photon detectors (SNSPDs or SSPD) are highly promising devices in the growing field of quantum information and communications technology. We have developed a practical SSPD system with our superconducting thin films and devices fabrication, optical coupling packaging, and cryogenic technology. The SSPD system consists of six-channel SSPD devices and a compact Gifford-McMahon (GM) cryocooler, and can operate continuously on 100 V ac power without the need for any cryogens. The SSPD devices were fabricated from high-quality niobium nitride (NbN) ultrathin films that were epitaxially grown on single-crystal MgO substrates. The packaged SSPD devices were temperature stabilized to 2.96 K ± 10 mK. The system detection efficiency for an SSPD device with an area of 20 × 20 ¿m2 was found to be 2.6% and 4.5% at wavelengths of 1550 and 1310 nm, respectively, at a dark count rate of 100 Hz, and a jitter of 100 ps full-width at half maximum. We also performed ultrafast BB84 quantum key distribution (QKD) field testing and entanglement-based QKD experiments using these SSPD devices. |
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676 |
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Yang, J.K.W.; Kerman, A.J.; Dauler, E.A.; Cord, B.; Anant, V.; Molnar, R.J.; Berggren, K.K. |
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Suppressed critical current in superconducting nanowire single-photon detectors with high fill-factors |
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2009 |
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IEEE Trans. Appl. Supercond. |
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19 |
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3 |
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318-322 |
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SNSPD |
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In this work we present a new fabrication process that enabled the fabrication of superconducting nanowire single photon detectors SNSPD with fill-factors as high as 88% with gaps between nanowires as small as 12 nm. This fabrication process combined high-resolution electron-beam lithography with photolithography. Although this work was motivated by the potential of increased detection efficiency with higher fill-factor devices, test results showed an unexpected systematic suppression in device critical currents with increasing fill-factor. |
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