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Churikov, Victor M.; Kopp, Victor I.; Genack, Azriel Z. |
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Chiral diffraction gratings in twisted microstructured fibers |
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2010 |
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Optics Letters |
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Opt. Lett. |
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35 |
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3 |
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342-344 |
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chiral diffracion gratings, optical fiber gratings, from chiralphotonics |
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We observed dips in transmission spectra of uniformly twisted pure-silica microstructured fibers. The spectral positions of the dips and their insensitivity to the surrounding medium are consistent with Bragg diffraction from the helical structure. The reproducibility of the variation of the dip wavelength with temperature up to 1000°C makes the chiral diffraction grating suitable for high-temperature sensing. |
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853 |
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Seki, T.; Shibata, H.; Takesue, H.; Tokura, Y.; Imoto, N. |
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Comparison of timing jitter between NbN superconducting single-photon detector and avalanche photodiode |
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Journal Article |
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2010 |
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Phys. C |
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Phys. C |
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470 |
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20 |
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1534-1537 |
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SSPD; APD; jitter |
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We report the pulse-to-pulse timing jitter measurement of a niobium nitride (NbN) superconducting single-photon detector (SSPD) and an InGaAs avalanche photodiode (APD) at 1550-nm wavelength. A direct comparison of their timing jitter was performed by using the same experimental configuration to measure both detectors. The measured jitter of the SSPD and the APD are 75 and 84 ps at full-width at half-maximum (FWHM), and 138 and 384 ps at full-width at tenth-maximum (FWTM), respectively. The jitter of the SSPD remains small at FWTM while that of APD is wide. We also estimated the transmission distances and secure key generation rates for fiber-based quantum key distribution (QKD) which uses these detectors. The estimated transmission distances of the APD are 86 km and 107 km with respect to 1 ns and 100 ps time windows, respectively, and those of the SSPD are 125 km and 172 km with respect to 1 ns and 100 ps time windows, respectively. This estimation indicates the SSPDЃfs advantages for QKD compared to the APD. |
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RPLAB @ akorneev @ |
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613 |
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Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I. |
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Concentration dependence of the intermediate frequency bandwidth of submillimeter heterodyne AlGaAs/GaAs nanostructures |
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Journal Article |
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2010 |
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Bull. Russ. Acad. Sci. Phys. |
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Bull. Russ. Acad. Sci. Phys. |
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74 |
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1 |
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100-102 |
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2DEG AlGaAs/GaAs heterostructures, THz heterodyne detectors, IF bandwidth |
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The concentration dependence of the intermediate frequency bandwidth of heterodyne AlGaAs/GaAs detectors with 2D electron gas is measured using submillimeter spectroscopy with high time resolution at T= 4.2 K. The intermediate frequency bandwidth f3dBfalls from 245 to 145 MHz with increasing concentration of 2D electrons n s = (1.6-6.6) × 10[su11] cm-2. The dependence f3dB ≈ n s – 0.04±is observed in the studied concentration range; this dependence is determined by electron scattering by the deformation potential of acoustic phonons and piezoelectric scattering. |
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1062-8738 |
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1217 |
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Mannino, Giovanni; Spinella, Corrado; Ruggeri, Rosa; La Magna, Antonino; Fisicaro, Giuseppe; Fazio, Enza; Neri, Fortunato; Privitera, Vittorio |
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Crystallization of implanted amorphous silicon during millisecond annealing by infrared laser irradiation |
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2010 |
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Applied Physics Letters |
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Appl. Phys. Lett. |
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97 |
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2 |
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3 |
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Annealing |
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We investigated the homogenous nucleation of crystalline grains in amorphous Si during transient temperature pulse of few milliseconds IR laser irradiation. The crystallized volume fraction is ~80%. Significant crystallization occurs in nonsteady regime because of the rapid temperature variation (106 °C/s). Our model combines the time evolution of the crystal grain population with the consumption of the amorphous volume due to the growth of grains. Thanks to the experimental approach based on a laser source to heat α-Si and the theoretical model we extended the description of the spontaneous crystallization up to 1323 K or 250 K above the temperature investigated by conventional annealing. |
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Annealing |
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RPLAB @ gujma @ |
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691 |
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Корнеева, Ю. П.; Флоря, И. Н.; Корнеев, А. А.; Гольцман, Г. Н. |
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Cверхпроводящий однофотонный детектор для дальнего ИК диапазона длин волн |
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2010 |
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Науч. сессия НИЯУ МИФИ |
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Науч. сессия НИЯУ МИФИ |
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46-47 |
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SSPD |
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Мы представляем быстродействующий сверхпроводниковый однофотонный детектор (SSPD) для дальнего инфракрасного диапазона на основе ультратонкой монокристаллической пленки NbN толщиной 3 нм, состоящий из параллельных полосок. QE на длине волны 1,5.μм и 1,3 μм для предложенного SSPD практически одинаковы. SSPD показывает отклик длительностью 200 пс, что открывает путь к детекторам, обладающим скоростью счета свыше 1 ГГц. |
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978-5-7262-1227-2 |
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УДК 533.14(06)+004.056(06) Фотоника и информационная оптика |
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1144 |
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