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ГОСТ 3.1102-2011. ЕСТД. Стадии разработки и виды документов. Общие положения |
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2011 |
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gost, detproj |
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864 |
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Feresten, Nancy Laties; Thornton, Jennifer A.; Emmett, Jennifer; Lamichhane, Priyanka; Epstein, Lori; Kiesow, Annette; Olesin, Kate; Hill, Grace (eds) |
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Everything: Rocks and Minerals |
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Book Whole |
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2011 |
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Nat. Geogr. Partners |
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1-64 |
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children |
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Feresten, Nancy Laties; Thornton, Jennifer A.; Emmett, Jennifer; Lamichhane, Priyanka; Epstein, Lori; Kiesow, Annette; Olesin, Kate; Hill, Grace |
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1146 |
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Korneev, Alexander; Korneeva, Yulia; Florya, Irina; Elezov, Michael; Manova, Nadezhda; Tarkhov, Michael; An, Pavel; Kardakova, Anna; Isupova, Anastasiya; Chulkova, Galina; Voronov, Boris |
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Recent advances in superconducting NbN single-photon detector development |
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Conference Article |
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2011 |
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Proc. SPIE |
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Proc. SPIE |
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8072 |
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807202 (1 to 10) |
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SSPD |
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Superconducting single-photon detector (SSPD) is a planar nanostructure patterned from 4-nm-thick NbN film deposited on sapphire substrate. The sensitive element of the SSPD is 100-nm-wide NbN strip. The device is operated at liquid helium temperature. Absorption of a photon leads to a local suppression of superconductivity producing subnanosecond-long voltage pulse. In infrared (at 1550 nm and longer wavelengths) SSPD outperforms avalanche photodiodes in terms of detection efficiency (DE), dark counts rate, maximum counting rate and timing jitter. Efficient single-mode fibre coupling of the SSPD enabled its usage in many applications ranging from single-photon sources research to quantum cryptography. Recently we managed to improve the SSPD performance and measured 25% detection efficiency at 1550 nm wavelength and dark counts rate of 10 s-1. We also improved photon-number resolving SSPD (PNR-SSPD) which realizes a spatial multiplexing of incident photons enabling resolving of up to 4 simultaneously absorbed photons. Another improvement is the increase of the photon absorption using a λ/4 microcavity integrated with the SSPD. And finally in our strive to increase the DE at longer wavelengths we fabricated SSPD with the strip almost twice narrower compared to the standard 100 nm and demonstrated that in middle infrared (about 3 μm wavelength) these devices have DE several times higher compared to the traditional SSPDs. |
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RPLAB @ gujma @ |
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663 |
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Sprengers, J.P.; Gaggero, A.; Sahin, D.; Nejad, S. Jahanmiri; Mattioli, F.; Leoni, R.; Beetz, J.; Lermer, M.; Kamp, M.; Höfling, S.; Sanjines, R.; Fiore A. |
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Title |
Waveguide single-photon detectors for integrated quantum photonic circuits |
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Conference Article |
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Year |
2011 |
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arXiv |
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arXiv |
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1108.5107 |
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1-11 |
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optical waveguides, waveguide SSPD |
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The generation, manipulation and detection of quantum bits (qubits) encoded on single photons is at the heart of quantum communication and optical quantum information processing. The combination of single-photon sources, passive optical circuits and single-photon detectors enables quantum repeaters and qubit amplifiers, and also forms the basis of all-optical quantum gates and of linear-optics quantum computing. However, the monolithic integration of sources, waveguides and detectors on the same chip, as needed for scaling to meaningful number of qubits, is very challenging, and previous work on quantum photonic circuits has used external sources and detectors. Here we propose an approach to a fully-integrated quantum photonic circuit on a semiconductor chip, and demonstrate a key component of such circuit, a waveguide single-photon detector. Our detectors, based on superconducting nanowires on GaAs ridge waveguides, provide high efficiency (20%) at telecom wavelengths, high timing accuracy (60 ps), response time in the ns range, and are fully compatible with the integration of single-photon sources, passive networks and modulators. |
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no |
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846 |
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Belitsky, V.; Desmaris, V.; Dochev, D.; Meledin, D.; Pavolotsky, A. |
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Title |
Towards Multi-Pixel Heterodyne Terahertz Receivers |
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Conference Article |
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Year |
2011 |
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Proc. 22th Int. Symp. Space Terahertz Technol. |
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Terahertz multi-pixel heterodyne receivers introduce multiple challenges for their implementation, mostly due to the extremely small dimensions of all components and even smaller tolerances in terms of alignment, linear dimensions and waveguide component surface quality. In this manuscript, we present a concept of terahertz multi-pixel heterodyne receiver employing optical layout using polarization split between the LO and RF. The frontend isbased on a waveguide balanced HEB mixer for the frequency band 1.6 – 2.0 THz. The balanced HEB mixer followsthe layout of earlier demonstrated APEX T2 mixer. However for the mixer presented here, we implemented split-block layout offering inimized lengths of all waveguides and thus reducing the associated RF loss. The micromachining methods employed for producing the mixer housing and the HEB mixer chip are very suitable for producing multiple structures and hence are in-line with requirements of multi-pixel receiver technology. The demonstrated relatively simple mounting of the mixer chip with self-aligning should greatly facilitate the integration of such multi-channel receiver. Index Terms—Instrumentation, Multi-pixel, Terahertz, Waveguide Balanced Mixer. |
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RPLAB @ atomics90 @ |
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975 |
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Pentin, I. V.; Smirnov, A. V.; Ryabchun, S. A.; Gol’tsman, G. N.; Vaks, V. L.; Pripolzin, S. I.; Paveliev, D. G. |
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Heterodyne source of THz range based on semiconductor superlattice multiplier |
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Conference Article |
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2011 |
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IRMMW-THz |
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IRMMW-THz |
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1-2 |
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NbN HEB mixer, superlattice |
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We present the results of our studies of the possibility of developing a heterodyne receiver incorporating a hot-electron bolometer mixer as the detector and a semiconductor superlattice multiplier driven by a reference synthesizer as the local oscillator. We observe that such a local oscillator offers enough power in the terahertz range to pump the HEB into the operating state. |
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6105209 |
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1384 |
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Ryabchun, S.; Smirnov, A.; Pentin, I.; Vakhtomin, Yu.; Smirnov, K.; Kaurova, N.; Voronov, B.; Goltsman, G. |
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Title |
Superconducting single photon detector integrated with optical cavity |
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Conference Article |
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2011 |
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Proc. MLPLIT |
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Proc. MLPLIT |
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143-145 |
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NbN SSPD, cavity |
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Suzdal / Vladimir (Russia) |
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Modern laser physics and laser-information technologies for science and manufacture |
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1st international russian-chinese conference / youthschool-workshop |
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September 23-28, 2011 |
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1385 |
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Maslennikova, A.; Larionov, P.; Ryabchun, S.; Smirnov, A.; Pentin, I.; Vakhtomin, Yu.; Smirnov, K.; Kaurova, N.; Voronov, B.; Goltsman, G. |
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Noise equivalent power and dynamic range of NBN hot-electron bolometers |
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2011 |
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Proc. MLPLIT |
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Proc. MLPLIT |
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146-148 |
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NbN HEB |
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Suzdal / Vladimir (Russia) |
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Modern laser physics and laser-information technologies for science and manufacture |
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1st international russian-chinese conference / youthschool-workshop |
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September 23-28, 2011 |
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1386 |
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Korneev, A.; Korneeva, Y.; Florya, I.; Voronov, B.; Goltsman, G. |
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Spectral sensitivity of narrow strip NbN superconducting single-photon detector |
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Conference Article |
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2011 |
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Proc. SPIE |
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Proc. SPIE |
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8072 |
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80720G (1 to 9) |
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NbN SSPD, SNSPD |
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Superconducting single-photon detector (SSPD) is patterned from 4-nm-thick NbN film deposited on sapphire substrate as a 100-nm-wide strip. Due to its high detection efficiency, low dark counts, and picosecond timing jitter SSPD has become a competitor to the InGaAs avalanche photodiodes at 1550 nm and longer wavelengths. Although the SSPD is operated at liquid helium temperature its efficient single-mode fibre coupling enabled its usage in many applications ranging from single-photon sources research to quantum cryptography. In our strive to increase the detection efficiency at 1550 nm and longer wavelengths we developed and fabricated SSPD with the strip almost twice narrower compared to the standard 100 nm. To increase the voltage response of the device we utilized cascade switching mechanism: we connected 50-nm-wide and 10-μm-long strips in parallel covering the area of 10 μmx10 μm. Absorption of a photon breaks the superconductivity in a strip leading to the bias current redistribution between other strips followed their cascade switching. As the total current of all the strips about is 1 mA by the order of magnitude the response voltage of such an SSPD is several times higher compared to the traditional meander-shaped SSPDs. In middle infrared (about 3 μm wavelength) these devices have the detection efficiency several times higher compared to the traditional SSPDs. |
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SPIE |
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Fiurásek, J.; Prochazka, I. |
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Photon Counting Applications, Quantum Optics, and Quantum Information Transfer and Processing III |
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1387 |
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Kumar, Sushil; Chan, Chun Wang I.; Hu, Qing; Reno, John L. |
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A 1.8-THz quantum cascade laser operating significantly above the temperature of hw/k |
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Journal Article |
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2011 |
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Nature Physics |
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7 |
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166-171 |
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QCL, 2 mW at 155 K and 1.8 THz |
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Several competing technologies continue to advance the field of terahertz science; of particular importance has been the development of a terahertz semiconductor quantum cascade laser (QCL), which is arguably the only solid-state terahertz source with average optical power levels of much greater than a milliwatt. Terahertz QCLs are required to be cryogenically cooled and improvement of their temperature performance is the single most important research goal in the field. Thus far, their maximum operating temperature has been empirically limited to ~planckω/kB, a largely inexplicable trend that has bred speculation that a room-temperature terahertz QCL may not be possible in materials used at present. Here, we argue that this behaviour is an indirect consequence of the resonant-tunnelling injection mechanism employed in all previously reported terahertz QCLs. We demonstrate a new scattering-assisted injection scheme to surpass this limit for a 1.8-THz QCL that operates up to ~1.9planckω/kB (163 K). Peak optical power in excess of 2 mW was detected from the laser at 155 K. This development should make QCL technology attractive for applications below 2 THz, and initiate new design strategies for realizing a room-temperature terahertz semiconductor laser. |
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631 |
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