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Author Gol’tsman, G.N. url  openurl
  Title (up) Overview of recent results for superconducting NbN terahertz and optical detectors and mixers Type Miscellaneous
  Year 2014 Publication SM2 – Seminar on Terahertz Photonics Abbreviated Journal  
  Volume Issue Pages 0562  
  Keywords NbN SSPD, SNSPD, HEB  
  Abstract We present our recent achievements in the development of sensitive and ultrafast thin-film superconducting sensors: hot-electron bolometers (HEB), HEB-mixers for terahertz range and infrared single-photon counters. These sensors have already demonstrated a performance that makes them devices-of-choice for many terahertz and optical applications.  
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  Call Number Serial 1746  
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Author Irimajiri, Y.; Kumagai, M.; Morohashi, I.; Kawakami, A.; Nagano, S.; Sekine, N.; Ochiai, S.; Tanaka, S.; Hanado, Y.; Uzawa, Y.; Hosako, I. doi  isbn
openurl 
  Title (up) Phase-locking of a THz-QCL using a Low Noise HEB mixer, and a Frequency-comb as a Reference Type Conference Article
  Year 2014 Publication 39th Int. Conf. IRMMW-THz Abbreviated Journal 39th Int. Conf. IRMMW-THz  
  Volume Issue Pages 1-2  
  Keywords  
  Abstract We have developed a phase-locking system of a 3.1THz QCL (Quantum Cascade Laser) using a low noise hot electron bolometer mixer (HEBM) and a THz reference. The THz reference was generated by photomixing two optical modes of a frequency comb. The THz-QCL and HEBM devices are fabricated in our laboratory. A line width of the phase-locked QCL of narrower than 1Hz was achieved.  
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  ISSN ISBN 978-1-4799-3877-3 Medium  
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  Notes Approved no  
  Call Number RPLAB @ atomics90 @ Serial 969  
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Author Bennett, Douglas A.; Schmidt, Daniel R.; Swetz, Daniel S.; Ullom, Joel N. doi  openurl
  Title (up) Phase-slip lines as a resistance mechanism in transition-edge sensors Type Journal Article
  Year 2014 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.  
  Volume 104 Issue Pages 042602  
  Keywords microbolometers, TES, phase-slip lines, PSL  
  Abstract The fundamental mechanism of resistance in voltage-biased superconducting films is poorly understood despite its importance as the basis of transition-edge sensors (TESs). TESs are utilized in state-of-the-art microbolometers and microcalorimeters covering a wide range of energies and applications. We present a model for the resistance of a TES based on phase-slip lines (PSLs) and compare the model to data. One of the model's predictions, discrete changes in the number of PSLs, is a possible explanation for the observed switching between discrete current states in localized regions of bias.  
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  Notes Recommended by Klapwijk Approved no  
  Call Number Serial 929  
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Author Fedorov, G.; Kardakova, A.; Gayduchenko, I.; Voronov, B. M.; Finkel, M.; Klapwijk, T. M.; Goltsman, G. url  openurl
  Title (up) Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-THz radiation Type Abstract
  Year 2014 Publication Proc. 25th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 25th Int. Symp. Space Terahertz Technol.  
  Volume Issue Pages 71  
  Keywords carbon nanotubes, CNT  
  Abstract This work reports on the voltage response of asymmetric carbon nanotube devices to sub-THz radiation at the frequency of 140 GHz. The devices contain CNT’s, which are over their length partially suspended and partially Van der Waals bonded to a SiO 2 substrate, causing a difference in thermal contact. Different heat sinking of CNTs by source and drain gives rise to temperature gradient and consequent thermoelectric power (TEP) as such a device is exposed to the sub-THz radiation. Sign of the DC signal, its power and gate voltage dependence observed at room temperature are consistent with this scenario. At liquid helium temperature the observed response is more complex. DC voltage signal of an opposite sign is observed in a narrow range of gate voltages at low temperatures and under low radiation power. We argue that this may indicate a true photovoltaic response from small gap (less than 10meV) CNT’s, an effect never reported before. While it is not clear if the observed effects can be used to develop efficient THz detectors we note that the responsivity of our devices exceeds that of CNT based devices in microwave or THz range reported before at room temperature. Besides at 4.2 K notable increase of the sample conductance (at least four-fold) is observed. Our recent results with asymmetric carbon nanotube devices response to THz radiation (2.5 THz) will also be presented.  
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  Notes Approved no  
  Call Number Serial 1361  
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Author Glejm, A. V.; Anisimov, A. A.; Asnis, L. N.; Vakhtomin, Yu. B.; Divochiy, A. V.; Egorov, V. I.; Kovalyuk, V. V.; Korneev, A. A.; Kynev, S. M.; Nazarov, Yu. V.; Ozhegov, R. V.; Rupasov, A. V.; Smirnov, K. V.; Smirnov, M. A.; Goltsman, G. N.; Kozlov, S. A. doi  openurl
  Title (up) Quantum key distribution in an optical fiber at distances of up to 200 km and a bit rate of 180 bit/s Type Journal Article
  Year 2014 Publication Bulletin of the Russian Academy of Sciences. Physics Abbreviated Journal  
  Volume 78 Issue 3 Pages 171-175  
  Keywords SSPD, SNSPD, applications  
  Abstract An experimental demonstration of a subcarrier-wave quantum cryptography system with superconducting single-photon detectors (SSPDs) that distributes a secure key in a single-mode fiber at distance of 25 km with a bit rate of 800 kbit/s, a distance of 100 km with a bit rate of 19 kbit/s, and a distance of 200 km with a bit rate of 0.18 kbit/s is described.  
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  ISSN 1062-8738 ISBN Medium  
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  Notes Approved no  
  Call Number RPLAB @ kovalyuk @ Serial 940  
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