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Author | Shcheslavskiy, V.; Morozov, P.; Divochiy, A.; Vakhtomin, Y.; Smirnov, K.; Becker, W. | ||||
Title | Erratum: “Ultrafast time measurements by time-correlated single photon counting coupled with superconducting single photon detector” [Rev. Sci. Instrum. 87, 053117 (2016)] | Type | Miscellaneous | ||
Year | 2016 | Publication | Rev. Sci. Instrum. | Abbreviated Journal | Rev. Sci. Instrum. |
Volume | 87 | Issue | 6 | Pages | 069901 |
Keywords | SSPD, SNSPD, TCSPC, jitter | ||||
Abstract | In the original paper1the Ref. 10 should be M. Sanzaro, N. Calandri, A. Ruggeri, C. Scarcella, G. Boso, M. Buttafava, and A. Tosi, Proc. SPIE9370, 93701T (2015). | ||||
Address | Becker & Hickl GmbH, Nahmitzer Damm 30, Berlin 12277, Germany | ||||
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ISSN | 0034-6748 | ISBN | Medium | ||
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Notes | PMID:27370512 | Approved | no | ||
Call Number | Serial | 1810 | |||
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Author | Krause, S.; Mityashkin, V.; Antipov, S.; Gol'tsman, G.; Meledin, D.; Desmaris, V.; Belitsky, V.; Rudzinski, M. | ||||
Title | Study of IF bandwidth of NbN hot electron bolometers on GaN buffer layer using a direct measurement method | Type | Conference Article | ||
Year | 2016 | Publication | Proc. 27th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | |
Volume | Issue | Pages | 30-32 | ||
Keywords | NbN HEB, GaN buffer layer | ||||
Abstract | In this paper, we present a reliable measurement method to study the influence of the GaN buffer layer on phonon-escape time in comparison with commonly used Si substrates and, in consequence, on the IF bandwidth of HEBs. One of the key aspects is to operate the HEB mixer at elevated bath temperatures close to the critical temperature of the NbN ultra-thin film, where contributions from electron-phonon processes and self-heating effects are relatively small, therefore IF roll-off will be governed by the phonon-escape.Two independent experiments were performed at GARD and MSPU on a similar experimental setup at frequencies of approximately 180 and 140 GHz, respectively, and have shown reproducible and consistent results. The entire IF chain was characterized by S-parameter measurements. We compared the measurement results of epitaxial NbN grown onto GaN buffer-layer with Tc of 12.5 K (4.5nm) with high quality polycrystalline NbN films on Si substrate with Tc of 10.5K (5nm) and observed a strong indication of an enhancement of phonon escape to the substrate by a factor of two for the NbN/GaN material combination. | ||||
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Notes | Approved | no | |||
Call Number | Serial | 1202 | |||
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Author | Khasminskaya, S.; Pyatkov, F.; Słowik, K.; Ferrari, S.; Kahl, O.; Kovalyuk, V.; Rath, P.; Vetter, A.; Hennrich, F.; Kappes, M. M.; Gol'tsman, G.; Korneev, A.; Rockstuhl, C.; Krupke, R.; Pernice, W. H. P. | ||||
Title | Fully integrated quantum photonic circuit with an electrically driven light source | Type | Journal Article | ||
Year | 2016 | Publication | Nat. Photon. | Abbreviated Journal | Nat. Photon. |
Volume | 10 | Issue | 11 | Pages | 727-732 |
Keywords | Carbon nanotubes and fullerenes, Integrated optics, Single photons and quantum effects, Waveguide integrated single-photon detector | ||||
Abstract | Photonic quantum technologies allow quantum phenomena to be exploited in applications such as quantum cryptography, quantum simulation and quantum computation. A key requirement for practical devices is the scalable integration of single-photon sources, detectors and linear optical elements on a common platform. Nanophotonic circuits enable the realization of complex linear optical systems, while non-classical light can be measured with waveguide-integrated detectors. However, reproducible single-photon sources with high brightness and compatibility with photonic devices remain elusive for fully integrated systems. Here, we report the observation of antibunching in the light emitted from an electrically driven carbon nanotube embedded within a photonic quantum circuit. Non-classical light generated on chip is recorded under cryogenic conditions with waveguide-integrated superconducting single-photon detectors, without requiring optical filtering. Because exclusively scalable fabrication and deposition methods are used, our results establish carbon nanotubes as promising nanoscale single-photon emitters for hybrid quantum photonic devices. | ||||
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Notes | Approved | no | |||
Call Number | RPLAB @ kovalyuk @ | Serial | 1105 | ||
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Author | Iomdina, E. N.; Seliverstov, S.; Sianosyan, A.; Teplyakova, K.; Rusova, A.; Goltsman, G. | ||||
Title | The prospects of using the radiation for the assessment of corneal and scleral hydration | Type | Abstract | ||
Year | 2016 | Publication | Acta Ophthalmol. | Abbreviated Journal | Acta Ophthalmol. |
Volume | 94 | Issue | Pages | ||
Keywords | BWO, avalanche transit‐time diode, medicine, biology | ||||
Abstract | Purpose An adequate water balance (hydration extent) is one of the basic factors of normal eye function, including its external shells – the cornea and the sclera. THz systems creating images in reflected beams are likely to become ideal instruments of noninvasive testing of corneal and scleral hydration degree as THz radiation is highly sensitive to water content. The paper aims at studying the transmittance and reflectance spectra of the cornea and the sclera of rabbit and human eyes, as well as those of the whole rabbit eye, in the frequency range of 0.13–0.32 THz. Methods The experiments were carried out on 3 corneas and 3 rabbit scleras, 2 whole rabbit eyes, and 3 human healthy adult scleras using a specially developed THz system based on reliable and easy‐to‐use continuous wave sources: a backward‐wave oscillator and an avalanche transit‐time diode. Results The transmittance spectra of the cornea and the sclera and the dependence of the reflection coefficient of these tissues in THz range on water percentage content were determined. Comparison of the rabbit cornea hydrated from 73.2% to 76.3% concentration by mass demonstrated an approximately linear relationship between THz reflectivity and water concentration. The decrease of free water concentration by 1% leads to a drop of the reflectance coefficient by 13%. The parameters studied displayed noticeable differences between the sclera and the cornea of rabbits and between rabbit sclera and human sclera. Conclusions Preliminary results demonstrate that the proposed technique, based on continuous THz radiation, may be used to create a device for noninvasive testing of corneal and scleral hydration, which has good potential of wide‐scale practical application. The work was supported by the Russian Foundation of Basic Research (grant No.15‐29‐03843) |
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ISSN | 1755375X | ISBN | Medium | ||
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Notes | Approved | no | |||
Call Number | Serial | 1333 | |||
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Author | Tret'yakov, I. V.; Kaurova, N. S.; Voronov, B. M.; Anfert'ev, V. A.; Revin, L. S.; Vaks, V. L.; Gol'tsman, G. N. | ||||
Title | The influence of the diffusion cooling on the noise band of the superconductor NbN hot-electron bolometer operating in the terahertz range | Type | Journal Article | ||
Year | 2016 | Publication | Tech. Phys. Lett. | Abbreviated Journal | |
Volume | 42 | Issue | 6 | Pages | 563-566 |
Keywords | HEB, noise bandwidth, conversion gain bandwidth, noise temperature, Andreev reflection | ||||
Abstract | Results of an experimental study of the noise temperature (Tn) and noise bandwidth (NBW) of the superconductor NbN hot-electron bolometer (HEB) mixer as a function of its temperature (Tb) are presented. It was determined that the NBW of the mixer is significantly wider at temperatures close to the critical ones (Tc) than are values measured at 4.2 K. The NBW of the mixer measured at the heterodyne frequency of 2.5 THz at temperature Tb close to Tc was ~13 GHz, as compared with 6 GHz at Tb = 4.2 K. This experiment clearly demonstrates the limitation of the thermal flow from the NbN bridge at Tb â‰<aa> Tc for mixers manufactured by the in situ technique. This limitation is close in its nature to the Andreev reflection on the superconductor/ metal boundary. In this case, the noise temperature of the studied mixer increased from 1100 to 3800 K. | ||||
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Notes | Approved | no | |||
Call Number | Serial | 1106 | |||
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