| Records |
| Author |
Belosevich, V. V.; Gayduchenko, I. A.; Titova, N. A.; Zhukova, E. S.; Goltsman, G. N.; Fedorov, G. E.; Silaev, A. A. |
| Title |
Response of carbon nanotube film transistor to the THz radiation |
Type |
Conference Article |
| Year |
2018 |
Publication |
EPJ Web Conf. |
Abbreviated Journal |
EPJ Web Conf. |
| Volume |
195 |
Issue |
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Pages |
05012 (1 to 2) |
| Keywords |
field-effect transistor, FET, carbon nanotube, CNT |
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2100-014X |
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1317 |
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| Author |
Tretyakov, I.; Kaurova, N.; Raybchun, S.; Goltsman, G. N.; Silaev, A. A. |
| Title |
Technology for NbN HEB based multipixel matrix of THz range |
Type |
Conference Article |
| Year |
2018 |
Publication |
EPJ Web Conf. |
Abbreviated Journal |
EPJ Web Conf. |
| Volume |
195 |
Issue |
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Pages |
05011 |
| Keywords |
NbN HEB |
| Abstract |
The influence of homogeneity disorder degree of the thin superconducting NbN film across of Si wafer on characteristics of the Hot Electron Bolometers (HEB) has been investigated. Our experiments have been carried out near the superconducting transition and far below it. The high homogeneity disorder degree of the NbN film has been achieved by preparing the Si substrate surface. The fabricated HEBs all have almost identical R (T) characteristics with a dispersion of Tc and the normal resistance R300 of not more than 0.15K and 2 Ω, respectively. The quality of the devises allows us to demonstrate clearly the influence of non-equilibrium processes in the S’SS’ system on the device performance. Our fabrication technology also allows creating multiplex heterodyne and direct detector matrices based the HEB devices. |
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2100-014X |
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1318 |
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Korneeva, Y.; Vodolazov, D.; Florya, I.; Manova, N.; Smirnov, E.; Korneev, A.; Mikhailov, M.; Goltsman, G.; Klapwijk, T. M.; Naumov, A. V.; Gladush, M. G.; Karimullin, K. R. |
| Title |
Single photon detection in micron scale NbN and α-MoSi superconducting strips |
Type |
Conference Article |
| Year |
2018 |
Publication |
EPJ Web Conf. |
Abbreviated Journal |
EPJ Web Conf. |
| Volume |
190 |
Issue |
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Pages |
04010 (1 to 2) |
| Keywords |
SSPD |
| Abstract |
We experimentally demonstrate the single photon detection in straight micrometer-wide NbN and α-MoSi bridges. Width of the bridges is 2 µm, while the wavelength of the photon changes from 408 to 1550 nm and critical current exceeds 50% of the depairing current. Obtained results offer the alternative route for design of detectors without resonator and meander structure and indirectly confirm vortex assisted mechanism of single photon detection. |
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2100-014X |
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1319 |
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Goltsman, G.; Naumov, A. V.; Gladush, M. G.; Karimullin, K. R. |
| Title |
Quantum photonic integrated circuits with waveguide integrated superconducting nanowire single-photon detectors |
Type |
Conference Article |
| Year |
2018 |
Publication |
EPJ Web Conf. |
Abbreviated Journal |
EPJ Web Conf. |
| Volume |
190 |
Issue |
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Pages |
02004 (1 to 2) |
| Keywords |
waveguide SSPD, SNSPD |
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We show the design, a history of development as well as the most successful and promising approaches for QPICs realization based on hybrid nanophotonic-superconducting devices, where one of the key elements of such a circuit is a waveguide integrated superconducting single-photon detector (WSSPD). The potential of integration with fluorescent molecules is discussed also. |
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2100-014X |
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1320 |
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| Author |
Fedorov, G.; Gayduchenko, I.; Titova, N.; Gazaliev, A.; Moskotin, M.; Kaurova, N.; Voronov, B.; Goltsman, G. |
| Title |
Carbon nanotube based schottky diodes as uncooled terahertz radiation detectors |
Type |
Journal Article |
| Year |
2018 |
Publication |
Phys. Status Solidi B |
Abbreviated Journal |
Phys. Status Solidi B |
| Volume |
255 |
Issue |
1 |
Pages |
1700227 (1 to 6) |
| Keywords |
carbon nanotube schottky diodes, CNT |
| Abstract |
Despite the intensive development of the terahertz technologies in the last decade, there is still a shortage of efficient room‐temperature radiation detectors. Carbon nanotubes (CNTs) are considered as a very promising material possessing many of the features peculiar for graphene (suppression of backscattering, high mobility, etc.) combined with a bandgap in the carrier spectrum. In this paper, we investigate the possibility to incorporate individual CNTs into devices that are similar to Schottky diodes. The latter is currently used to detect radiation with a frequency up to 50 GHz. We report results obtained with semiconducting (bandgap of about 0.5 eV) and quasi‐metallic (bandgap of few meV) single‐walled carbon nanotubes (SWNTs). Semiconducting CNTs show better performance up to 300 GHz with responsivity up to 100 V W−1, while quasi‐metallic CNTs are shown to operate up to 2.5 THz. |
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0370-1972 |
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1321 |
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