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Author Tretyakov, I.; Svyatodukh, S.; Chumakova, A.; Perepelitsa, A.; Kaurova, N.; Shurakov, A.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. url  doi
isbn  openurl
  Title Room temperature silicon detector for IR range coated with Ag2S quantum dots Type Conference Article
  Year 2019 Publication IRMMW-THz Abbreviated Journal  
  Volume Issue Pages (up)  
  Keywords Ag2S quantum dots  
  Abstract A silicon has been the chief technological semiconducting material of modern microelectronics and has had a strong influence on all aspects of society. Applications of Si-based optoelectronic devices are limited to the visible and near infrared ranges. The expansion of the Si absorption to shorter wavelengths of the infrared range is of considerable interest to optoelectronic applications. By creating impurity states in Si it is possible to cause sub-band gap photon absorption. Here, we present an elegant and effective technology of extending the photoresponse of towards the IR range. Our approach is based on the use of Ag 2 S quantum dots (QDs) planted on the surface of Si. The specific sensitivity of the Ag 2 S/Si heterostructure is 10 11 cm√HzW -1 at 1.55μm. Our findings open a path towards the future study and development of Si detectors for technological applications.  
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  ISSN 2162-2035 ISBN 978-1-5386-8285-2 Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number 8874267 Serial 1286  
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Author Chandrasekar, R.; Lapin, Z. J.; Nichols, A. S.; Braun, R. M.; Fountain, A. W. url  doi
openurl 
  Title Photonic integrated circuits for Department of Defense-relevant chemical and biological sensing applications: state-of-the-art and future outlooks Type Conference Article
  Year 2019 Publication Opt. Eng. Abbreviated Journal Opt. Eng.  
  Volume 58 Issue 02 Pages (up) 1  
  Keywords photonic integrated circuits, PIC, optical waveguides, defense applications  
  Abstract Photonic integrated circuits (PICs), the optical counterpart of traditional electronic integrated circuits, are paving the way toward truly portable and highly accurate biochemical sensors for Department of Defense (DoD)-relevant applications. We introduce the fundamentals of PIC-based biochemical sensing and describe common PIC sensor architectures developed to-date for single-identification and spectroscopic sensor classes. We discuss DoD investments in PIC research and summarize current challenges. We also provide future research directions likely required to realize widespread application of PIC-based biochemical sensors. These research directions include materials research to optimize sensor components for multiplexed sensing; engineering improvements to enhance the practicality of PIC-based devices for field use; and the use of synthetic biology techniques to design new selective receptors for chemical and biological agents.  
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  Series Volume Series Issue Edition  
  ISSN 0091-3286 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1346  
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Author Polyakova, M.; Semenov, A. V.; Kovalyuk, V.; Ferrari, S.; Pernice, W. H. P.; Gol'tsman, G. N. url  doi
openurl 
  Title Protocol of measuring hot-spot correlation length for SNSPDs with near-unity detection efficiency Type Journal Article
  Year 2019 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume 29 Issue 5 Pages (up) 1-5  
  Keywords SSPD, waveguide-integrated SNSPD, hot-spot interaction length  
  Abstract We present a simple quantum detector tomography protocol, which allows, without ambiguities, to measure the two-spot detection efficiency and extract the hot-spot interaction length of superconducting nanowire single photon detectors (SNSPDs) with unity intrinsic detection efficiency. We identify a significant parasitic contribution to the measured two-spot efficiency, related to an effect of the bias circuit, and find a way to rule out this contribution during data post-processing and directly in the experiment. From the data analysis for waveguide-integrated SNSPD, we find signatures of the saturation of the two-spot efficiency and hot-spot interaction length of order of 100 nm.  
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  ISSN 1051-8223 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1187  
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Author Saveskul, N. A.; Titova, N. A.; Baeva, E. M.; Semenov, A. V.; Lubenchenko, A. V.; Saha, S.; Reddy, H.; Bogdanov, S. I.; Marinero, E. E.; Shalaev, V. M.; Boltasseva, A.; Khrapai, V. S.; Kardakova, A. I.; Goltsman, G. N. url  openurl
  Title Superconductivity behavior in epitaxial TiN films points at surface magnetic disorder Type Miscellaneous
  Year 2019 Publication arXiv Abbreviated Journal arXiv  
  Volume Issue Pages (up) 1-10  
  Keywords  
  Abstract We analyze the evolution of the normal and superconducting electronic properties in epitaxial TiN films, characterized by high Ioffe-Regel parameter values, as a function of the film thickness. As the film thickness decreases, we observe an increase of in the residual resistivity, which becomes dominated by diffusive surface scattering for d≤20nm. At the same time, a substantial thickness-dependent reduction of the superconducting critical temperature is observed compared to the bulk TiN value. In such a high quality material films, this effect can be explained by a weak magnetic disorder residing in the surface layer with a characteristic magnetic defect density of ∼1012cm−2. Our results suggest that surface magnetic disorder is generally present in oxidized TiN films.  
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  Notes Approved no  
  Call Number Serial 1278  
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Author Bandurin, Denis; Svintsov, Dmitry; Gayduchenko, Igor; Xu, Shuigang; Principi, Alessandro; Moskotin, Maksim; Tretyakov, Ivan; Yagodkin, Denis; Zhukov, Sergey; Taniguchi, Takashi; Watanabe, Kenji; Grigorieva, Irina; Polini, Marco; Goltsman, Gregory; Geim, Andre; Fedorov, Georgy url  openurl
  Title Resonant terahertz photoresponse and superlattice plasmons in graphene field-effect transistors Type Abstract
  Year 2019 Publication APS March Meeting Abbreviated Journal APS March Meeting  
  Volume Issue Pages (up) F14.015  
  Keywords  
  Abstract Plasmons, collective oscillations of electron systems, can couple light and electric current, and thus can be used to create compact photodetectors, radiation mixers, and spectrometers. Despite the effort, it has proven challenging to implement plasmonic devices operating at THz frequencies. The material capable to meet this challenge is graphene as it supports long-lived electrically-tunable plasmons. In this talk, we will demonstrate plasmon-assisted resonant detection of THz radiation by antenna-coupled graphene FETs that act as both rectifying elements and plasmonic Fabry-Perot cavities amplifying the photoresponse. We will show that by varying the plasmon velocity using gate voltage, our detectors can be tuned between multiple resonant modes, a functionality that we apply to measure plasmons' wavelength and lifetime in graphene as well as to probe collective modes in its moire minibands. Our approach offers a convenient tool for further plasmonic research that is often difficult under non-ambient conditions and promises a viable route for various THz applications. We acknowledge Leverhulme Trust, Russian Science Foundation Grants N18-72-00234 and 17-72-30036, Russian Foundation for Basic Research No. 18-57-06001 and 16-29-03402.  
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  Notes Approved no  
  Call Number Serial 1290  
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