toggle visibility Search & Display Options

Select All    Deselect All
 |   | 
Details
   print
  Records Links
Author Мошкова, М. А.; Дивочий, А. В.; Морозов, П. В.; Антипов, А. В.; Вахтомин, Ю. Б.; Смирнов, К. В. url  openurl
  Title Оценка статистики распределения фотонов с использованием многоэлементного сверхпроводникового однофотонного детектора Type Conference Article
  Year 2019 Publication Межвузовская научно-техническая конференция студентов, аспирантов и молодых специалистов им. Е. В. Арменского Abbreviated Journal  
  Volume Issue Pages 201-202  
  Keywords SSPD  
  Abstract Проведен сравнительный анализ топологий сверхпроводниковых однофотонных детекторов с способностью к разрешению до четырёх фотонов в коротком импульсе ИК излучения. Получен детектор, с системной квантовой эффективностью ~85% на λ=1550 нм. Продемонстрирована возможность его использования для распределения числа фотонов импульсного источника излучения.  
  Address Москва  
  Corporate Author Thesis  
  Publisher (down) МИЭМ НИУ ВШЭ Place of Publication Editor  
  Language Russian Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1804  
Permanent link to this record
 

 
Author Золотов, Ф. И.; Смирнов, К. В. url  openurl
  Title Особенности осаждения разупорядоченных сверхтонких плёнок нитрида ванадия Type Conference Article
  Year 2019 Publication Межвузовская научно-техническая конференция студентов, аспирантов и молодых специалистов им. Е. В. Арменского Abbreviated Journal  
  Volume Issue Pages 204-205  
  Keywords VN films  
  Abstract В работе изучены особенности роста сверхтонких плёнок нитрида ванадия толщиной ~10 нм. Обнаружено, что при изменении температуры подложки и общего давления газов в процессе осаждения плёнок меняется значение их поверхностного сопротивления вблизи перехода к сверхпроводящему состоянию.  
  Address Москва  
  Corporate Author Thesis  
  Publisher (down) МИЭМ НИУ ВШЭ Place of Publication Editor  
  Language Russian Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1805  
Permanent link to this record
 

 
Author Kovaluyk, V.; Lazarenko, P.; Kozyukhin, S.; An, P.; Prokhodtsov, A.; Goltsman, G.; Sherchenkov, A. url  openurl
  Title Influence of the phase state of Ge2Sb2Te5 thin cover on the parameters of the optical waveguide structures Type Abstract
  Year 2019 Publication Proc. Amorphous and Nanostructured Chalcogenides Abbreviated Journal Proc. Amorphous and Nanostructured Chalcogenides  
  Volume Issue Pages 47-48  
  Keywords optical waveguides  
  Abstract The fast switching time of Ge-Sb-Te thin films between amorphous and crystalline states initiated by laser beam as well as significant change of their optical properties and the preservation of metastable states for tens of years open wide perspectives for the application of these materials to fully optical devices [1], including high-speed optical memory [2]. Here we study optical properties of the Ge2Sb2Te5 (GST225) thin films integrated with on-chip silicon nitride O-ring resonator. The rib waveguide of the resonator was formed the first stage of e-beam lithography and subsequent reactive-ion etching. We used the second stage of e-beam lithography combining with lift-off method for the formation of GST225 active region on the resonator ring surface. The amorphous GST225 thin films were prepared by magnetron sputtering, and were capped by thin silicon oxide on their tops. The length of the GST225 active region varied from 0.1 to 20 μ m. Crystallization of amorphous thin films was carried out at the temperature of 400 °C for 30 minutes. Auger electron spectroscopy and transmission electron microscopy were used for studying composition and structure of investigated GST225thin films, respectively. It was observed that crystallization of amorphous GST225 film lead to a decrease of the optical power, transmitted through the waveguide. Comparison of the optical transmittance of O-ring resonators before and after the GST225 deposition allowed to identify the change in the Q-factor and the wavelength peak shift. This can be explained by the differences of the complex refractive indexes of GST225 thin films in the amorphous and crystalline states. From the measurement data, the GST225 effective refractive index was extracted depending on the ring waveguide width of the resonator for a telecommunication wavelength of 1550 nm.  
  Address  
  Corporate Author Thesis  
  Publisher (down) Technical University of Moldova Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Poster Approved no  
  Call Number Serial 1281  
Permanent link to this record
 

 
Author Antipov, S.; Trifonov, A.; Krause, S.; Meledin, D.; Kaurova, N.; Rudzinski, M.; Desmaris, V.; Belitsky, V.; Goltsman, G. url  doi
openurl 
  Title Improved bandwidth of a 2 THz hot-electron bolometer heterodyne mixer fabricated on sapphire with a GaN buffer layer Type Journal Article
  Year 2019 Publication Supercond. Sci. Technol. Abbreviated Journal Supercond. Sci. Technol.  
  Volume 32 Issue 7 Pages 075003  
  Keywords NbN HEB mixer, GaN buffer layer, sapphire substrate  
  Abstract We report on the signal-to-noise and gain bandwidth of a niobium nitride (NbN) hot-electron bolometer (HEB) mixer at 2 THz fabricated on a sapphire substrate with a GaN buffer layer. Two mixers with different DC properties and geometrical dimensions were studied and they demonstrated very close bandwidth performance. The signal-to-noise bandwidth is increased to 8 GHz in comparison to the previous results, obtained without a buffer-layer. The data were taken in a quasi-optical system with the use of the signal-to-noise method, which is close to the signal levels used in actual astrophysical observations. We find an increase of the gain bandwidth to 5 GHz. The results indicate that prior results obtained on a substrate of crystalline GaN can also be obtained on a conventional sapphire substrate with a few micron MOCVD-deposited GaN buffer-layer.  
  Address  
  Corporate Author Thesis  
  Publisher (down) IOP Publishing Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Antipov_2019 Serial 1277  
Permanent link to this record
 

 
Author Chandrasekar, R.; Lapin, Z. J.; Nichols, A. S.; Braun, R. M.; Fountain, A. W. url  doi
openurl 
  Title Photonic integrated circuits for Department of Defense-relevant chemical and biological sensing applications: state-of-the-art and future outlooks Type Conference Article
  Year 2019 Publication Opt. Eng. Abbreviated Journal Opt. Eng.  
  Volume 58 Issue 02 Pages 1  
  Keywords photonic integrated circuits, PIC, optical waveguides, defense applications  
  Abstract Photonic integrated circuits (PICs), the optical counterpart of traditional electronic integrated circuits, are paving the way toward truly portable and highly accurate biochemical sensors for Department of Defense (DoD)-relevant applications. We introduce the fundamentals of PIC-based biochemical sensing and describe common PIC sensor architectures developed to-date for single-identification and spectroscopic sensor classes. We discuss DoD investments in PIC research and summarize current challenges. We also provide future research directions likely required to realize widespread application of PIC-based biochemical sensors. These research directions include materials research to optimize sensor components for multiplexed sensing; engineering improvements to enhance the practicality of PIC-based devices for field use; and the use of synthetic biology techniques to design new selective receptors for chemical and biological agents.  
  Address  
  Corporate Author Thesis  
  Publisher (down) Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0091-3286 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1346  
Permanent link to this record
Select All    Deselect All
 |   | 
Details
   print

Save Citations:
Export Records: