| Records |
| Author |
Romanov, N. R.; Zolotov, P. I.; Smirnov, K. V. |
| Title |
Development of disordered ultra-thin superconducting vanadium nitride films |
Type  |
Conference Article |
| Year |
2019 |
Publication |
Proc. 8th Int. Conf. Photonics and Information Optics |
Abbreviated Journal |
Proc. 8th Int. Conf. Photonics and Information Optics |
| Volume |
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Issue |
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Pages |
425-426 |
| Keywords |
VN films |
| Abstract |
We present the results of development and research of superconducting vanadium nitride VN films ~10 nm thick having different level of disorder. It is showed that both silicon substrate temperature T sub in process of magnetron sputtering and total gas pressure P affect superconducting transition temperature of sputtered films and R 300 /R 20 ratio defining their level of disorder. VN films suitable for development of superconducting single-photon detectors on their basis are obtained. |
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| Language |
Russian |
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ISBN |
978-5-7262-2536-4 |
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| Notes |
http://fioconf.mephi.ru/files/2018/12/FIO2019-Sbornik.pdf |
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| Call Number |
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Serial |
1802 |
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| Author |
Moshkova, M. A.; Divochiy, A. V.; Morozov, P. V.; Antipov, A. V.; Vakhtomin, Yu. B.; Smirnov, K. V. |
| Title |
Characterization of topologies of superconducting photon number resolving detectors |
Type |
Conference Article |
| Year |
2019 |
Publication |
Proc. 8th Int. Conf. Photonics and Information Optics |
Abbreviated Journal |
Proc. 8th Int. Conf. Photonics and Information Optics |
| Volume |
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Issue |
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Pages |
465-466 |
| Keywords |
PNR SSPD |
| Abstract |
Comparative analysis for different topologies of superconducting single-photon detectors with ability to resolve up to 4 photons in a short pulse of IR radiation has been carry out. It was developed the detector with a system detection efficiency of ~ 85 % at λ = 1550 nm. The possibility of using such detector to restore photon statistics of a pulsed radiation source was demonstrated. |
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Russian |
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978-5-7262-2536-4 |
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| Notes |
http://fioconf.mephi.ru/files/2018/12/FIO2019-Sbornik.pdf |
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no |
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Serial |
1803 |
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| Author |
Мошкова, М. А.; Дивочий, А. В.; Морозов, П. В.; Антипов, А. В.; Вахтомин, Ю. Б.; Смирнов, К. В. |
| Title |
Оценка статистики распределения фотонов с использованием многоэлементного сверхпроводникового однофотонного детектора |
Type |
Conference Article |
| Year |
2019 |
Publication |
Межвузовская научно-техническая конференция студентов, аспирантов и молодых специалистов им. Е. В. Арменского |
Abbreviated Journal |
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| Volume |
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Issue |
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Pages |
201-202 |
| Keywords |
SSPD |
| Abstract |
Проведен сравнительный анализ топологий сверхпроводниковых однофотонных детекторов с способностью к разрешению до четырёх фотонов в коротком импульсе ИК излучения. Получен детектор, с системной квантовой эффективностью ~85% на λ=1550 нм. Продемонстрирована возможность его использования для распределения числа фотонов импульсного источника излучения. |
| Address |
Москва |
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МИЭМ НИУ ВШЭ |
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Russian |
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1804 |
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| Author |
Золотов, Ф. И.; Смирнов, К. В. |
| Title |
Особенности осаждения разупорядоченных сверхтонких плёнок нитрида ванадия |
Type |
Conference Article |
| Year |
2019 |
Publication |
Межвузовская научно-техническая конференция студентов, аспирантов и молодых специалистов им. Е. В. Арменского |
Abbreviated Journal |
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| Volume |
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Issue |
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Pages |
204-205 |
| Keywords |
VN films |
| Abstract |
В работе изучены особенности роста сверхтонких плёнок нитрида ванадия толщиной ~10 нм. Обнаружено, что при изменении температуры подложки и общего давления газов в процессе осаждения плёнок меняется значение их поверхностного сопротивления вблизи перехода к сверхпроводящему состоянию. |
| Address |
Москва |
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МИЭМ НИУ ВШЭ |
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Russian |
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1805 |
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Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. |
| Title |
Room temperature silicon detector for IR range coated with Ag2S quantum dots |
Type |
Journal Article |
| Year |
2019 |
Publication |
Phys. Status Solidi RRL |
Abbreviated Journal |
Phys. Status Solidi RRL |
| Volume |
13 |
Issue |
9 |
Pages |
1900187-(1-6) |
| Keywords |
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| Abstract |
For decades, silicon has been the chief technological semiconducting material of modern microelectronics and has a strong influence on all aspects of the society. Applications of Si-based optoelectronic devices are limited to the visible and near infrared (IR) ranges. For photons with an energy less than 1.12 eV, silicon is almost transparent. The expansion of the Si absorption to shorter wavelengths of the IR range is of considerable interest for optoelectronic applications. By creating impurity states in Si, it is possible to cause sub-bandgap photon absorption. Herein, an elegant and effective technology of extending the photo-response of Si toward the IR range is presented. This approach is based on the use of Ag 2 S quantum dots (QDs) planted on the surface of Si to create impurity states in the Si bandgap. The specific sensitivity of the room temperature zero-bias Si_Ag 2 Sp detector is 10 11 cm Hz W 1 at 1.55 μm. Given the variety of available QDs and the ease of extending the photo-response of Si toward the IR range, these findings open a path toward future studies and development of Si detectors for technological applications. The current research at the interface of physics and chemistry is also of fundamental importance to the development of Si optoelectronics. |
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1862-6254 |
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no |
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1149 |
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