2018 |
|
|
Sidorova MV, Kozorezov AG, Semenov AV, Korneeva YP, Mikhailov MY, Devizenko AY, et al. Nonbolometric bottleneck in electron-phonon relaxation in ultrathin WSi films. Phys Rev B. 2018;97(18):184512 (1 to 13).
Abstract: We developed the model of the internal phonon bottleneck to describe the energy exchange between the acoustically soft ultrathin metal film and acoustically rigid substrate. Discriminating phonons in the film into two groups, escaping and nonescaping, we show that electrons and nonescaping phonons may form a unified subsystem, which is cooled down only due to interactions with escaping phonons, either due to direct phonon conversion or indirect sequential interaction with an electronic system. Using an amplitude-modulated absorption of the sub-THz radiation technique, we studied electron-phonon relaxation in ultrathin disordered films of tungsten silicide. We found an experimental proof of the internal phonon bottleneck. The experiment and simulation based on the proposed model agree well, resulting in τe−ph∼140–190 ps at TC=3.4K, supporting the results of earlier measurements by independent techniques.
|
|
|
|
Smirnov E, Golikov A, Zolotov P, Kovalyuk V, Lobino M, Voronov B, et al. Superconducting nanowire single-photon detector on lithium niobate. In: J. Phys.: Conf. Ser. Vol 1124.; 2018. 051025.
Abstract: We demonstrate superconducting niobium nitride nanowires folded on top of lithium niobate substrate. We report of 6% system detection efficiency at 20 s−1 dark count rate at telecommunication wavelength (1550 nm). Our results shown great potential for the use of NbN nanowires in the field of linear and nonlinear integrated quantum photonics.
|
|
|
|
Smirnov K, Divochiy A, Vakhtomin Y, Morozov P, Zolotov P, Antipov A, et al. NbN single-photon detectors with saturated dependence of quantum efficiency. Supercond Sci Technol. 2018;31(3):035011 (1 to 8).
Abstract: The possibility of creating NbN superconducting single-photon detectors with saturated dependence of quantum efficiency (QE) versus normalized bias current was investigated. It was shown that the saturation increases for the detectors based on finer films with a lower value of Rs300/Rs20. The decreasing of Rs300/Rs20 was related to the increasing influence of quantum corrections to conductivity of superconductors and, in turn, to the decrease of the electron diffusion coefficient. The best samples have a constant value of system QE 94% at Ib/Ic ~ 0.8 and wavelength 1310 nm.
|
|
|
|
Sych D, Shcherbatenko M, Elezov M, Goltsman GN. Towards the improvement of the heterodyne receiver sensitivity beyond the quantum noise limit. In: Proc. 29th Int. Symp. Space Terahertz Technol.; 2018. p. 245–7.
Abstract: Noise reduction in heterodyne receivers of the terahertz range is an important issue for astronomical applications. Quantum fluctuations, also known as shot noise, prohibit errorless measurements of the amplitude of electro-magnetic waves, and introduce the so-called standard quantum limit (SQL) on the minimum error of the heterodyne measurements. Nowadays, the sensitivity of modern heterodyne receivers approaches the SQL, and the growing demand for the improvement of measurement precision stimulates a number of both theoretical and experimental efforts to design novel measurement techniques aimed at overcoming the SQL. Here we demonstrate the first steps towards the practical implementation of a sub-SQL quantum receiver. As the principal resources, it requires a highly efficient single-photon counting detector and an interferometer-based scheme for mixing the signal with a low-power local oscillator. We describe the idea of such receiver and its main components.
|
|
|
|
Tretyakov I, Kaurova N, Raybchun S, Goltsman GN, Silaev AA. Technology for NbN HEB based multipixel matrix of THz range. In: EPJ Web Conf. Vol 195.; 2018. 05011.
Abstract: The influence of homogeneity disorder degree of the thin superconducting NbN film across of Si wafer on characteristics of the Hot Electron Bolometers (HEB) has been investigated. Our experiments have been carried out near the superconducting transition and far below it. The high homogeneity disorder degree of the NbN film has been achieved by preparing the Si substrate surface. The fabricated HEBs all have almost identical R (T) characteristics with a dispersion of Tc and the normal resistance R300 of not more than 0.15K and 2 Ω, respectively. The quality of the devises allows us to demonstrate clearly the influence of non-equilibrium processes in the S’SS’ system on the device performance. Our fabrication technology also allows creating multiplex heterodyne and direct detector matrices based the HEB devices.
|
|
|
|
Tretyakov I, Kaurova N, Voronov BM, Goltsman GN. About effect of the temperature operating conditions on the noise temperature and noise bandwidth of the terahertz range NbN hot-electron bolometers [abstract]. In: Proc. 29th Int. Symp. Space Terahertz Technol.; 2018. 113.
Abstract: Results of an experimental study of the noise temperature (Tn) and noise bandwidth (NBW) of the superconductor NbN hot-electron bolometer (HEB) mixer as a function of its temperature (Tb) and NbN bridge length are presented. It was determined that the NBW of the mixer is significantly wider at temperatures close to the critical ones (Tc) than are values measured at 4.2 K. The NBW of the mixer measured at the heterodyne frequency of 2.5 THz at temperature Tb close to Tc was ~13 GHz, as compared with 6 GHz at Tb = 4.2 K. This experiment clearly demonstrates the limitation of the thermal flow from the NbN bridge at Tb ≪ Tc for mixers manufactured by the in situ technique. This limitation is close in its nature to the Andreev reflection on the superconductor/metal boundary. In this case, the noise temperature of the studied mixer increased from 1100 to 3800 K.
|
|
|
|
Tretyakov IV, Anfertyev VA, Revin LS, Kaurova NS, Voronov BM, Vaks VL, et al. Sensitivity and resolution of a heterodyne receiver based on the NbN HEB mixer with a quantum-cascade laser as a local oscillator. Radiophys Quant Electron. 2018;60(12):988–92.
Abstract: We present the results of experimental studies of the basic characteristics and operation features of a terahertz heterodyne detector based on the superconducting NbN HEB mixer and a quantum cascade laser as a local oscillator operating at a frequency of 2.02 THz. The measured noise temperature of such a mixer amounted to 1500 K. The spectral resolution of the detector is determined by the width of the local-oscillator spectral line whose measured value does not exceed 1 MHz. The quantum-cascade laser could be linearly tuned with respect to frequency with the coefficient 7.2 MHz/mA within the limits of the current oscillation bandwidth.
|
|
|
|
Zolotov P, Divochiy A, Vakhtomin Y, Moshkova M, Morozov P, Seleznev V, et al. Photon-number-resolving SSPDs with system detection efficiency over 50% at telecom range. In: Proc. AIP Conf. Vol 1936.; 2018. 020019.
Abstract: We used technology of making high-efficiency superconducting single-photon detectors as a basis for improvement of photon-number-resolving devices. By adding optical cavity and using an improved NbN superconducting film, we enhanced previously reported system detection efficiency at telecom range for such detectors. Our results show that implementation of optical cavity helps to develop four-section device with quantum efficiency over 50% at 1.55 µm. Performed experimental studies of detecting multi-photon optical pulses showed irregularities over defining multi-photon through single-photon quantum efficiency.
|
|
|
|
Zolotov P, Divochiy A, Vakhtomin Y, Seleznev V, Morozov P, Smirnov K. Superconducting single-photon detectors made of ultra-thin VN films. In: KnE Energy. Vol 3.; 2018. p. 83–9.
Abstract: We optimized technology of thin VN films deposition in order to study VN-based superconducting single-photon detectors. Investigation of the main VN film parameters showed that this material has lower resistivity compared to commonly used NbN. Fabricated from obtained films devices showed 100% intrinsic detection efficiency at 900 nm, at the temperature of 1.7 K starting with the bias current of 0.7·I
|
|
|
|
Zolotov PI, Divochiy AV, Vakhtomin YB, Lubenchenko AV, Morozov PV, Shurkaeva IV, et al. Influence of sputtering parameters on the main characteristics of ultra-thin vanadium nitride films. In: J. Phys.: Conf. Ser. Vol 1124.; 2018. 051030.
Abstract: We researched the relation between deposition and ultra-thin VN films parameters. To conduct the experimental study we varied substrate temperature, Ar and N2 partial pressures and deposition rate. The study allowed us to obtain the films with close to the bulk values transition temperatures and implement such samples in order to fabricate superconducting single-photon detectors.
|
|
