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Elvira, D., Michon, A., Fain, B., Patriarche, G., Beaudoin, G., Robert-Philip, I., et al. (2010). Time-resolved spectroscopy of InAsP/InP(001) quantum dots emitting near 2 μm. Appl. Phys. Lett., 97(13), 131907 (1 to 3).
Abstract: By using superconducting single photon detectors, we perform time-resolved characterization of a small ensemble of InAsP/InP quantum dots grown by metal organic vapor phase epitaxy, emitting at wavelengths between 1.6 and 2.2 μm. We demonstrate that alloying phosphorus with InAs allows to shift the emission wavelength toward higher wavelengths, while keeping the high optical quality of these quantum dots at room temperature, with no decrease in their radiative lifetime. This work was partially supported by Russian Ministry of Science and Education: Federal State Program “Scientific and Educational Cadres of Innovative” state Contract Nos. 02.740.0228, 14.740.11.0343, 14.740.11.0269, and P931, and RFBR Project No. 09-02-12364.
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Glejm, A. V., Anisimov, A. A., Asnis, L. N., Vakhtomin, Y. B., Divochiy, A. V., Egorov, V. I., et al. (2014). Quantum key distribution in an optical fiber at distances of up to 200 km and a bit rate of 180 bit/s. Bulletin of the Russian Academy of Sciences. Physics, 78(3), 171–175.
Abstract: An experimental demonstration of a subcarrier-wave quantum cryptography system with superconducting single-photon detectors (SSPDs) that distributes a secure key in a single-mode fiber at distance of 25 km with a bit rate of 800 kbit/s, a distance of 100 km with a bit rate of 19 kbit/s, and a distance of 200 km with a bit rate of 0.18 kbit/s is described.
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Goltsman, G. N., Korneev, A. A., Finkel, M. I., Divochiy, A. V., Florya, I. N., Korneeva, Y. P., et al. (2010). Superconducting hot-electron bolometer as THz mixer, direct detector and IR single-photon counter. In 35th Int. Conf. Infrared, Millimeter, and Terahertz Waves (p. 1).
Abstract: We present a new generation of superconducting single-photon detectors (SSPDs) and hot-electron superconducting sensors with record characteristic for many terahertz and optical applications.
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Korneev, A. A., Divochiy, A. V., Vakhtomin, Y. B., Korneeva, Y. P., Larionov, P. A., Manova, N. N., et al. (2013). IR single-photon receiver based on ultrathin NbN superconducting film. Rus. J. Radio Electron., (5).
Abstract: We present our recent results in research and development of superconducting single-photon detector (SSPD). We achieved the following performance improvement: first, we developed and characterized SSPD integrated in optical cavity and enabling its illumination from the face side, not through the substrate, second, we improved the quantum efficiency of the SSPD at around 3 μm wavelength by reduction of the strip width to 40 nm, and, finally, we improved the detection efficiency of the SSPD-based single-photon receiver system up to 20% at 1550 nm and extended its wavelength range beyond 1800 nm by the usage of the fluoride ZBLAN fibres.
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Korneev, A. A., Korneeva, Y. P., Mikhailov, M. Y., Pershin, Y. P., Semenov, A. V., Vodolazov, D. Y., et al. (2015). Characterization of MoSi superconducting single-photon detectors in the magnetic field. IEEE Trans. Appl. Supercond., 25(3), 2200504 (1 to 4).
Abstract: We investigate the response mechanism of nanowire superconducting single-photon detectors (SSPDs) made of amorphous MoxSi1-x. We study the dependence of photon count and dark count rates on bias current in magnetic fields up to 113 mT at 1.7 K temperature. The observed behavior of photon counts is similar to the one recently observed in NbN SSPDs. Our results show that the detecting mechanism of relatively high-energy photons does not involve the vortex penetration from the edges of the film, and on the contrary, the detecting mechanism of low-energy photons probably involves the vortex penetration from the film edges.
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Korneeva, Y. P., Mikhailov, M. Y., Pershin, Y. P., Manova, N. N., Divochiy, A. V., Vakhtomin, Y. B., et al. (2014). Superconducting single-photon detector made of MoSi film. Supercond. Sci. Technol., 27(9), 095012.
Abstract: We fabricated and characterized nanowire superconducting single-photon detectors made of 4 nm thick amorphous Mox Si1−x films. At 1.7 K the best devices exhibit a detection efficiency (DE) up to 18% at 1.2 $\mu {\rm m}$ wavelength of unpolarized light, a characteristic response time of about 6 ns and timing jitter of 120 ps. The DE was studied in wavelength range from 650 nm to 2500 nm. At wavelengths below 1200 nm these detectors reach their maximum DE limited by photon absorption in the thin MoSi film.
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Moshkova, M. A., Divochiy, A. V., Morozov, P. V., Antipov, A. V., Vakhtomin, Y. B., & Smirnov, K. V. (2019). Characterization of topologies of superconducting photon number resolving detectors. In Proc. 8th Int. Conf. Photonics and Information Optics (pp. 465–466).
Abstract: Comparative analysis for different topologies of superconducting single-photon detectors with ability to resolve up to 4 photons in a short pulse of IR radiation has been carry out. It was developed the detector with a system detection efficiency of ~ 85 % at λ = 1550 nm. The possibility of using such detector to restore photon statistics of a pulsed radiation source was demonstrated.
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Ozhegov, R. V., Smirnov, A. V., Vakhtomin, Y. B., Smirnov, K. V., Divochiy, A. V., & Goltsman, G. N. (2009). Ultrafast superconducting bolometer receivers for terahertz applications. In Proc. PIERS (867). 777 Concord Avenue, Suite 207 Cambridge, MA 02138: The Electromagnetics Academy.
Abstract: The research by the group of Moscow State Pedagogical University into the hot-electron phenomena in thin superconducting films has led to the development of new types of detectors and their use both in fundamental and applied studies. In this paper, we present the results of testing the terahertz HEB receiver systems based on ultrathin (∼ 4 nm) NbN and MoRe detectors with a response time of 50 ps and 1 ns, respectively. We have developed three types of devices which differ in the way a terahertz signal is coupled to the detector and cover the following ranges: 0.3–3 THz, 0.1–30 THz and 25–70 THz. In the case of the receiving system optimized for 0.3–3 THz, the sensitive element (a strip of asuperconductor with planar dimensions of 0.2μm (length) by 1.7μm (width)) was integrated witha planar broadband log-spiral antenna. For additional focusing ofthe incident radiation a silicon hyperhemispherical lens was used. For the 0.1–30 THz receivingsystem, the sensitive element was patterned as parallel strips(2μm wide each) filling an area of 500×500μm2with a filling factor of 0.5. In the receivingsystem of this type we used direct coupling of the incident radiation to the sensitive element. Inthe 25–70 THz range (detector type 2/2a in Table 1) we used a square-shaped superconductingdetector with planar dimensions of 10×10μm2. Incident radiation was coupled to the detectorwith the use of a germanium hyperhemispherical lens.The response time of the above receiving systems is determined by the cooling rate of the hotelectrons in the film. That depends on the electron-phonon interaction time, which is less forultrathin NbN than in MoRe.
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Romanov, N. R., Zolotov, P. I., Vakhtomin, Y. B., Divochiy, A. V., & Smirnov, K. V. (2018). Electron diffusivity measurements of VN superconducting single-photon detectors. In J. Phys.: Conf. Ser. (Vol. 1124, 051032).
Abstract: The research of ultrathin vanadium nitride (VN) films as a promising candidate for superconducting single-photon detectors (SSPD) is presented. The electron diffusivity measurements are performed for such devices. Devices that were fabricated out from 9.9 nm films had diffusivity coefficient of 0.41 cm2/s and from 5.4 nm – 0.54 cm2/s. Obtained values are similar to other typical SSPD materials. The diffusivity that increases along with decreasing of the film thickness is expected to allow fabrication of the devices with improved characteristics. Fabricated VN SSPDs showed prominent single-photon response in the range 0.9-1.55 µm.
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Seleznev, V. A., Divochiy, A. V., Vakhtomin, Y. B., Morozov, P. V., Zolotov, P. I., Vasil'ev, D. D., et al. (2016). Superconducting detector of IR single-photons based on thin WSi films. In J. Phys.: Conf. Ser. (Vol. 737, 012032).
Abstract: We have developed the deposition technology of WSi thin films 4 to 9 nm thick with high temperature values of superconducting transition (Tc~4 K). Based on deposed films there were produced nanostructures with indicative planar sizes ~100 nm, and the research revealed that even on nanoscale the films possess of high critical temperature values of the superconducting transition (Tc~3.3-3.7 K) which certifies high quality and homogeneity of the films created. The first experiments on creating superconducting single-photon detectors showed that the detectors' SDE (system detection efficiency) with increasing bias current (I b) reaches a constant value of ~30% (for X=1.55 micron) defined by infrared radiation absorption by the superconducting structure. To enhance radiation absorption by the superconductor there were created detectors with cavity structures which demonstrated a practically constant value of quantum efficiency >65% for bias currents Ib>0.6-Ic. The minimal dark counts level (DC) made 1 s-1 limited with background noise. Hence WSi is the most promising material for creating single-photon detectors with record SDE/DC ratio and noise equivalent power (NEP).
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Smirnov, K. V., Divochiy, A. V., Vakhtomin, Y. B., Sidorova, M. V., Karpova, U. V., Morozov, P. V., et al. (2016). Rise time of voltage pulses in NbN superconducting single photon detectors. Appl. Phys. Lett., 109(5), 052601.
Abstract: We have found experimentally that the rise time of voltage pulse in NbN superconducting single photon detectors increases nonlinearly with increasing the length of the detector L. The effect is connected with dependence of resistance of the detector Rn, which appears after photon absorption, on its kinetic inductance Lk and, hence, on the length of the detector. This conclusion is confirmed by our calculations in the framework of two temperature model.
D.Yu.V. acknowledges the support from the Russian Foundation for Basic Research (Project No. 15-42-02365). K.V.S. acknowledges the financial support from the Ministry of Education and Science of the Russian Federation (Contract No. 3.2655.2014/K).
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Smirnov, K. V., Vakhtomin, Y. B., Divochiy, A. V., Ozhegov, R. V., Pentin, I. V., & Gol'tsman, G. N. (2010). Infrared and terahertz detectors on basis of superconducting nanostructures. In IEEE (Ed.), Microwave and Telecom. Technol. (CriMiCo), 20th Int. Crimean Conf. (pp. 823–824).
Abstract: Results of development of single-photon receiving systems of visible, infrared and terahertz range based on thin-film superconducting nanostructures are presented. The receiving systems are produced on the basis of superconducting nanostructures, which function by means of hot-electron phenomena.
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Smirnov, K. V., Vakhtomin, Y. B., Divochiy, A. V., Ozhegov, R. V., Pentin, I. V., Slivinskaya, E. V., et al. (2009). Single-photon detectors for the visible and infrared parts of the spectrum based on NbN nanostructures. In Proc. Progress In Electromagnetics Research Symp. (pp. 863–864). Moscow, Russia.
Abstract: The research by the group of Moscow State Pedagogical University into the hot-electron phenomena in thin superconducting films has led to the development of new types ofdetectors [1, 2] and their use both in fundamental and applied studies [3–6]. In this paper, wepresent the results of the development and fabrication of receiving systems for the visible andinfrared parts of the spectrum optimised for use in telecommunication systems and quantumcryptography.
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Vorobyov, V. V., Kazakov, A. Y., Soshenko, V. V., Korneev, A. A., Shalaginov, M. Y., Bolshedvorskii, S. V., et al. (2017). Superconducting detector for visible and near-infrared quantum emitters [Invited]. Opt. Mater. Express, 7(2), 513–526.
Abstract: Further development of quantum emitter based communication and sensing applications intrinsically depends on the availability of robust single-photon detectors. Here, we demonstrate a new generation of superconducting single-photon detectors specifically optimized for the 500–1100 nm wavelength range, which overlaps with the emission spectrum of many interesting solid-state atom-like systems, such as nitrogen-vacancy and silicon-vacancy centers in diamond. The fabricated detectors have a wide dynamic range (up to 350 million counts per second), low dark count rate (down to 0.1 counts per second), excellent jitter (62 ps), and the possibility of on-chip integration with a quantum emitter. In addition to performance characterization, we tested the detectors in real experimental conditions involving nanodiamond nitrogen-vacancy emitters enhanced by a hyperbolic metamaterial.
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Zolotov, P. I., Divochiy, A. V., Vakhtomin, Y. B., Lubenchenko, A. V., Morozov, P. V., Shurkaeva, I. V., et al. (2018). Influence of sputtering parameters on the main characteristics of ultra-thin vanadium nitride films. In J. Phys.: Conf. Ser. (Vol. 1124, 051030).
Abstract: We researched the relation between deposition and ultra-thin VN films parameters. To conduct the experimental study we varied substrate temperature, Ar and N2 partial pressures and deposition rate. The study allowed us to obtain the films with close to the bulk values transition temperatures and implement such samples in order to fabricate superconducting single-photon detectors.
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Zolotov, P. I., Divochiy, A. V., Vakhtomin, Y. B., Morozov, P. V., Seleznev, V. A., & Smirnov, K. V. (2017). Development of high-effective superconducting single-photon detectors aimed for mid-IR spectrum range. In J. Phys.: Conf. Ser. (Vol. 917, 062037).
Abstract: We report on development of superconducting single-photon detectors (SSPD) with high intrinsic quantum efficiency in the wavelength range 1.31 – 3.3 μm. By optimization of the NbN film thickness and its compound, we managed to improve detection efficiency of the detectors in the range up to 3.3 μm. Optimized devices showed intrinsic quantum efficiencies as high as 10% at mid-IR range.
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Zolotov, P. I., Semenov, A. V., Divochiy, A. V., Goltsman, G. N., Romanov, N. R., & Klapwijk, T. M. (2021). Dependence of photon detection efficiency on normal-state sheet resistance in marginally superconducting films of NbN. IEEE Trans. Appl. Supercond., 31(5), 1–5.
Abstract: We present an extensive set of data on nanowire-type superconducting single-photon detectors based on niobium-nitride (NbN) to establish the empirical correlation between performance and the normal-state resistance per square. We focus, in particular, on the bias current, compared to the expected depairing current, needed to achieve a near-unity detection efficiency for photon detection. The data are discussed within the context of a model in which the photon energy triggers the movement of vortices i.e. superconducting dissipation, followed by thermal runaway. Since the model is based on the non-equilibrium theory for conventional superconductors deviations may occur, because the efficient regime is found when NbN acts as a marginal superconductor in which long-range phase coherence is frustrated.
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Zolotov, P. I., Vakhtomin, Y. B., Divochiy, A. V., Seleznev, V. A., & Smirnov, K. V. (2016). Technology development of resonator-based structures for efficiency increasing of NBN detectors of IR single photons. Proc. 5th Int. Conf. Photonics and Information Optics, , 115–116.
Abstract: This paper presents a technology of fabrication of NbN superconductive single- photon detectors, using resonator structures. The main results are related to optimization of the process of NbN sputtering over substrate with metallic mirrors and SiO 2 /Si 3 N 4 layers /4 thick. Investigation of the quantum efficiency of fabricated devices at 1.6 K on 1.55 μm showed triple-magnified value compared to standard Si/NbN structures.
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