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Gol’tsman, G., Korneev, A., Tarkhov, M., Seleznev, V., Divochiy, A., Minaeva, O., et al. (2007). Middle-infrared ultrafast superconducting single photon detector. In 32nd IRMW / 15th ICTE (pp. 115–116).
Abstract: We present the results of the research on quantum efficiency of the ultrathin-film superconducting single-photon detectors (SSPD) in the wavelength rage from 1 mum to 5.7 mum. Reduction of operation temperature to 1.6 K allowed us to measure quantum efficiency of ~1 % at 5.7 mum wavelength with the SSPD made from 4-nm-thick NbN film. In a pursuit of further performance improvement we endeavored SSPD fabricating from 4-nm-thick MoRe film as an alternative material. The MoRe film exhibited transition temperature of 7.7K, critical current density at 4.2 K temperature was 1.1times10 6 A/cm 2 , and diffusivity 1.73 cmVs. The single-photon response was observed with MoRe SSPD at 1.3 mum wavelength with quantum efficiency estimated to be 0.04%.
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Goltsman, G. N., Korneev, A. A., Finkel, M. I., Divochiy, A. V., Florya, I. N., Korneeva, Y. P., et al. (2010). Superconducting hot-electron bolometer as THz mixer, direct detector and IR single-photon counter. In 35th Int. Conf. Infrared, Millimeter, and Terahertz Waves (p. 1).
Abstract: We present a new generation of superconducting single-photon detectors (SSPDs) and hot-electron superconducting sensors with record characteristic for many terahertz and optical applications.
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Tarkhov, M., Claudon, J., Poizat, J. P., Korneev, A., Divochiy, A., Minaeva, O., et al. (2008). Ultrafast reset time of superconducting single photon detectors. Appl. Phys. Lett., 92(24), 241112 (1 to 3).
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Shcherbatenko, M., Tretyakov, I., Lobanov, Y., Maslennikov, S. N., Kaurova, N., Finkel, M., et al. (2016). Nonequilibrium interpretation of DC properties of NbN superconducting hot electron bolometers. Appl. Phys. Lett., 109(13), 132602.
Abstract: We present a physically consistent interpretation of the dc electrical properties of niobiumnitride (NbN)-based superconducting hot-electron bolometer mixers, using concepts of nonequilibrium superconductivity. Through this, we clarify what physical information can be extracted from the resistive transition and the dc current-voltage characteristics, measured at suitably chosen temperatures, and relevant for device characterization and optimization. We point out that the intrinsic spatial variation of the electronic properties of disordered superconductors, such as NbN, leads to a variation from device to device.
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Słysz, W., Węgrzecki, M., Bar, J., Grabiec, P., Górska, M., Zwiller, V., et al. (2006). Fiber-coupled single-photon detectors based on NbN superconducting nanostructures for practical quantum cryptography and photon-correlation studies. Appl. Phys. Lett., 88(26), 261113 (1 to 3).
Abstract: We have fabricated and tested a two-channel single-photon detector system based on two fiber-coupled superconducting single-photon detectors (SSPDs). Our best device reached the system quantum efficiency of 0.3% in the 1540-nm telecommunication wavelength with a fiber-to-detector coupling factor of about 30%. The photoresponse consisted of 2.5-ns-wide voltage pulses with a rise time of 250ps and timing jitter below 40ps. The overall system response time, measured as a second-order, photon cross-correlation function, was below 400ps. Our SSPDs operate at 4.2K inside a liquid-helium Dewar, but their optical fiber inputs and electrical outputs are at room temperature. Our two-channel detector system should find applications in practical quantum cryptography and in antibunching-type quantum correlation measurements.
The authors would like to thank Dr. Marc Currie for his assistance in early time-resolved photoresponse measurements and Professor Atac Imamoglu for his support. This work was supported by the Polish Ministry of Science under Project No. 3 T11B 052 26 (Warsaw), RFBR 03-02-17697 and INTAS 03-51-4145 grants (Moscow), CRDF Grant No. RE2-2531-MO-03 (Moscow), RE2-2529-MO-03 (Moscow and Rochester), and US AFOSR FA9550-04-1-0123 (Rochester). Additional funding was provided by the grants from the MIT Lincoln Laboratory and BBN Technologies Corp.
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Marsili, F., Bitauld, D., Divochiy, A., Gaggero, A., Leoni, R., Mattioli, F., et al. (2008). Superconducting nanowire photon number resolving detector at telecom wavelength. In CLEO/QELS (Qmj1 (1 to 2)). Optical Society of America.
Abstract: We demonstrate a photon-number-resolving (PNR) detector, based on parallel superconducting nanowires, capable of resolving up to 5 photons in the telecommunication wavelength range, with sensitivity and speed far exceeding existing approaches.
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Elmanov, I., Elmanova, A., Komrakova, S., Golikov, A., Kaurova, N., Kovalyuk, V., et al. (2019). Method for determination of resists parameters for photonic – integrated circuits e-beam lithography on silicon nitride platform. In EPJ Web Conf. (Vol. 220, 03012).
Abstract: In the work the thicknesses of the e-beam resists ZEP 520A and ma-N 2400 by using non-destructive method were measured, as well as recipe for the high ratio between the Si3N4 and the resists etching rate was determined. The work has a practical application for e-beam lithography of photonic-integrated circuits and nanophotonics devices based on silicon nitride platform.
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Tretyakov, I., Kaurova, N., Raybchun, S., Goltsman, G. N., & Silaev, A. A. (2018). Technology for NbN HEB based multipixel matrix of THz range. In EPJ Web Conf. (Vol. 195, 05011).
Abstract: The influence of homogeneity disorder degree of the thin superconducting NbN film across of Si wafer on characteristics of the Hot Electron Bolometers (HEB) has been investigated. Our experiments have been carried out near the superconducting transition and far below it. The high homogeneity disorder degree of the NbN film has been achieved by preparing the Si substrate surface. The fabricated HEBs all have almost identical R (T) characteristics with a dispersion of Tc and the normal resistance R300 of not more than 0.15K and 2 Ω, respectively. The quality of the devises allows us to demonstrate clearly the influence of non-equilibrium processes in the S’SS’ system on the device performance. Our fabrication technology also allows creating multiplex heterodyne and direct detector matrices based the HEB devices.
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Matyushkin, Y., Kaurova, N., Voronov, B., Goltsman, G., & Fedorov, G. (2020). On chip carbon nanotube tunneling spectroscopy. Fullerenes, Nanotubes and Carbon Nanostructures, 28(1), 50–53.
Abstract: We report an experimental study of the band structure of individual carbon nanotubes (SCNTs) based on investigation of the tunneling density of states, i.e. tunneling spectroscopy. A common approach to this task is to use a scanning tunneling microscope (STM). However, this approach has a number of drawbacks, to overcome which, we propose another method – tunneling spectroscopy of SCNTs on a chip using a tunneling contact. This method is simpler, cheaper and technologically advanced than the STM. Fabrication of a tunnel contact can be easily integrated into any technological route, therefore, a tunnel contact can be used, for example, as an additional tool in characterizing any devices based on individual CNTs. In this paper we demonstrate a simple technological procedure that results in fabrication of good-quality tunneling contacts to carbon nanotubes.
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Loudkov, D., Tong, C. Y. E., Blundell, R., Kaurova, N., Grishina, E., Voronov, B., et al. (2005). An investigation of the performance of the superconducting HEB슠mixer as a function of its RF슠embedding impedance. IEEE Trans. Appl. Supercond., 15(2), 472–475.
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