Ryabchun, S., Korneev, A., Matvienko, V., Smirnov, K., Kouminov, P., Seleznev, V., et al. (2004). Superconducting single photon detectors array based on hot electron phenomena. In Proc. 15th Int. Symp. Space Terahertz Technol. (pp. 242–247).
Abstract: In this paper we propose to use time domain multiplexing for large format arrays of superconducting single photon detectors (SSPDs) of the terahertz, visible and infrared frequency ranges based on ultrathin superconducting NbN films. Effective realization of time domain multiplexing for SSPD arrays is possible due to a short electric pulse of the SSPD as response to radiation quantum absorption, picosecond jitter and extremely low noise equivalent power (NEP). We present experimental results of testing 2×2 arrays in the infrared waveband. The measured noise equivalent power in the infrared and expected for the terahertz waveband is 10 – 21 WHz -1/2 . The best quantum efficiency (QE) of SSPD is 50% at 1.3 µm wavelength.
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Pentin, I., Vakhtomin, Y., Seleznev, V., & Smirnov, K. (2020). Hot electron energy relaxation time in vanadium nitride superconducting film structures under THz and IR radiation. Sci. Rep., 10(1), 16819.
Abstract: The paper presents the experimental results of studying the dynamics of electron energy relaxation in structures made of thin (d approximately 6 nm) disordered superconducting vanadium nitride (VN) films converted to a resistive state by high-frequency radiation and transport current. Under conditions of quasi-equilibrium superconductivity and temperature range close to critical (~ Tc), a direct measurement of the energy relaxation time of electrons by the beats method arising from two monochromatic sources with close frequencies radiation in sub-THz region (omega approximately 0.140 THz) and sources in the IR region (omega approximately 193 THz) was conducted. The measured time of energy relaxation of electrons in the studied VN structures upon heating of THz and IR radiation completely coincided and amounted to (2.6-2.7) ns. The studied response of VN structures to IR (omega approximately 193 THz) picosecond laser pulses also allowed us to estimate the energy relaxation time in VN structures, which was ~ 2.8 ns and is in good agreement with the result obtained by the mixing method. Also, we present the experimentally measured volt-watt responsivity (S~) within the frequency range omega approximately (0.3-6) THz VN HEB detector. The estimated values of noise equivalent power (NEP) for VN HEB and its minimum energy level (deltaE) reached NEP@1MHz approximately 6.3 x 10(-14) W/ radicalHz and deltaE approximately 8.1 x 10(-18) J, respectively.
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Antipov, A. V., Seleznev, V. A., Vakhtomin, Y. B., Morozov, P. V., Vasilev, D. D., Malevannaya, E. I., et al. (2020). Investigation of WSi and NbN superconducting single-photon detectors in mid-IR range. In IOP Conf. Ser.: Mater. Sci. Eng. (Vol. 781, 012011 (1 to 5)).
Abstract: Spectral characteristics of WSi and NbN superconducting single-photon detectors with different surface resistance and width of nanowire strips have been investigated in the wavelength range of 1.3-2.5 μm. WSi structures with narrower strips demonstrated better performance for detection of single photons in longer wavelength range. The difference in normalized photon count rate for such structures reaches one order of magnitude higher in comparison with structures based on NbN thin films at 2.5 μm.
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Smirnov, K., Korneev, A., Minaeva, O., Divochij, A., Rubtsova, I., Antipov, A., et al. (2006). Superconducting single-photon detector for near- and middle IR wavelength range. In Proc. 16th Int. Crimean Microwave and Telecommunication Technology (Vol. 2, pp. 684–685).
Abstract: Presented in this paper are the results of research of NbN-film superconducting single-photon detector. At 2 K temperature, quantum efficiency in the visible light (0.56 mum) reaches 30-40 %. With the wavelength increase quantum efficiency decreases and comes to 20% at 1.55 mum and 0.02% at 5.6 mum. Minimum dark counts rate is 2times10-4s-1. The jitter of detector is 35 ps. The detector was successfully implemented for integrated circuits non-invasive optical testing. It is also perspective for quantum cryptography systems
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Zolotov, P. I., Vakhtomin, Y. B., Divochiy, A. V., Seleznev, V. A., & Smirnov, K. V. (2016). Technology development of resonator-based structures for efficiency increasing of NBN detectors of IR single photons. Proc. 5th Int. Conf. Photonics and Information Optics, , 115–116.
Abstract: This paper presents a technology of fabrication of NbN superconductive single- photon detectors, using resonator structures. The main results are related to optimization of the process of NbN sputtering over substrate with metallic mirrors and SiO 2 /Si 3 N 4 layers /4 thick. Investigation of the quantum efficiency of fabricated devices at 1.6 K on 1.55 μm showed triple-magnified value compared to standard Si/NbN structures.
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