Vachtomin, Y. B., Antipov, S. V., Kaurova, N. S., Maslennikov, S. N., Smirnov, K. V., Polyakov, S. L., et al. (2004). Noise temperature, gain bandwidth and local oscillator power of NbN phonon-cooled HEB mixer at terahertz frequenciess. In Proc. 29th IRMMW / 12th THz (pp. 329–330). Karlsruhe, Germany.
Abstract: We present the performances of HEB mixers based on 3.5 nm thick NbN film integrated with log-periodic spiral antenna. The double side-band receiver noise temperature values are 1300 K and 3100 K at 2.5 THz and at 3.8 THz, respectively. The gain bandwidth of the mixer is 4.2 GHz and the noise bandwidth is 5 GHz. The local oscillator power is 1-3 /spl mu/W for mixers with different active area.
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Morozov, D. V., Smirnov, K. V., Smirnov, A. V., Lyakhov, V. A., & Goltsman, G. N. (2005). A millimeter-submillimeter phonon-cooled hot-electron bolometer mixer based on two-dimensional electron gas in an AlGaAs/GaAs heterostructure. Semicond., 39(9), 1082–1086.
Abstract: Experimental results obtained by studying the main characteristics of a millimeter-submillimeter wave mixer based on the hot-electron effect in a two-dimensional electron gas in a AlGaAs/GaAs heterostructure with a phonon-scattering cooling mechanism for charge carriers are reported. The gain bandwidth of the mixer is 4 GHz, the internal conversion losses are 13 dB, and the optimum local-oscillator power is 0.5 μW (for a mixer area of 1 μm2). It is shown that a millimeter-submillimeter-wave receiver with a noise temperature of 1900 K can be developed on the basis of a AlGaAs/GaAs mixer. This mixer also appears to be promising for use in array receiver elements.
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Shangina, E. L., Smirnov, K. V., Morozov, D. V., Kovalyuk, V. V., Gol’tsman, G. N., Verevkin, A. A., et al. (2010). Concentration dependence of the intermediate frequency bandwidth of submillimeter heterodyne AlGaAs/GaAs nanostructures. Bull. Russ. Acad. Sci. Phys., 74(1), 100–102.
Abstract: The concentration dependence of the intermediate frequency bandwidth of heterodyne AlGaAs/GaAs detectors with 2D electron gas is measured using submillimeter spectroscopy with high time resolution at T= 4.2 K. The intermediate frequency bandwidth f3dBfalls from 245 to 145 MHz with increasing concentration of 2D electrons n s = (1.6-6.6) × 10[su11] cm-2. The dependence f3dB ≈ n s – 0.04±is observed in the studied concentration range; this dependence is determined by electron scattering by the deformation potential of acoustic phonons and piezoelectric scattering.
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Gol’tsman, G. N., & Smirnov, K. V. (2001). Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures. Jetp Lett., 74(9), 474–479.
Abstract: Theoretical and experimental works devoted to studying electron-phonon interaction in the two-dimensional electron gas of semiconductor heterostructures at low temperatures in the case of strong heating in an electric field under quasi-equilibrium conditions and in a quantizing magnetic field perpendicular to the 2D layer are considered.
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Verevkin, A. A., Ptitsina, N. G., Smirnov, K. V., Voronov, B. M., Gol’tsman, G. N., Gershenson, E. M., et al. (1999). Multiple Andreev reflection in hybrid AlGaAs/GaAs structures with superconducting NbN contacts. Semicond., 33(5), 551–554.
Abstract: The conductivity of hybrid microstructures with superconducting contacts made of niobium nitride to a semiconductor with a two-dimensional electron gas in a AlGaAs/GaAs heterostructure has been investigated. Distinctive features of the behavior of the conductivity indicate the presence of multiple Andreev reflection at scattering centers in the normal region near the superconductor-semiconductor boundary.
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