Korneeva, Y. P., Manova, N. N., Dryazgov, M. A., Simonov, N. O., Zolotov, P. I., & Korneev, A. A. (2021). Influence of sheet resistance and strip width on the detection efficiency saturation in micron-wide superconducting strips and large-area meanders. Supercond. Sci. Technol., 34(8), 084001.
Abstract: We report our study of detection efficiency (DE) saturation in wavelength range 400 – 1550 nm for the NbN Superconducting Microstrip Single-Photon Detectors (SMSPD) featuring the strip width up to 3 μm. We observe an expected decrease of the $DE$ saturation plateau with the increase of photon wavelength and decrease of film sheet resistance. At 1.7 K temperature DE saturation can be clearly observed at 1550 nm wavelength in strip with the width up to 2 μm when sheet resistance of the film is above 630Ω/sq. In such strips the length of the saturation plateau almost does not depend on the strip width. We used these films to make meander-shaped detectors with the light sensitive area from 20×20μm2 to a circle 50 μm in diameter. In the latter case, the detector with the strip width of 0.49 μm demonstrates saturation of DE up to 1064 nm wavelength. Although DE at 1310 and 1550 nm is not saturated, it is as high as 60%. The response time is limited by the kinetic inductance and equals to 20 ns(by 1/e decay), timing jitter is 44 ps. When coupled to multi-mode fibre large-area meanders demonstrate significantly higher dark count rate which we attribute to thermal background photons, thus advanced filtering technique would be required for practical applications.
|
Smirnov, K., Divochiy, A., Vakhtomin, Y., Morozov, P., Zolotov, P., Antipov, A., et al. (2018). NbN single-photon detectors with saturated dependence of quantum efficiency. Supercond. Sci. Technol., 31(3), 035011 (1 to 8).
Abstract: The possibility of creating NbN superconducting single-photon detectors with saturated dependence of quantum efficiency (QE) versus normalized bias current was investigated. It was shown that the saturation increases for the detectors based on finer films with a lower value of Rs300/Rs20. The decreasing of Rs300/Rs20 was related to the increasing influence of quantum corrections to conductivity of superconductors and, in turn, to the decrease of the electron diffusion coefficient. The best samples have a constant value of system QE 94% at Ib/Ic ~ 0.8 and wavelength 1310 nm.
|
Zolotov, P., Vakhtomin, Y., Divochiy, A., Morozov, P., Seleznev, V., & Smirnov, K. (2017). Development of fast and high-effective single-photon detector for spectrum range up to 2.3 μm. In Proc. SPBOPEN (pp. 439–440).
Abstract: We present the results of development and testing of the single-photon-counting system operating in the wide spectrum rane up to 2.3 mcm. We managed to increase system detection efficiency up to 60% in the range of 1.7-2.3 mcm optimisation of the fabrication methods of superconducting single-photon detectors and application of the single-mode fiber with enlarged core diameter.
|
Zolotov, P., Divochiy, A., Vakhtomin, Y., Moshkova, M., Morozov, P., Seleznev, V., et al. (2018). Photon-number-resolving SSPDs with system detection efficiency over 50% at telecom range. In Proc. AIP Conf. (Vol. 1936, 020019).
Abstract: We used technology of making high-efficiency superconducting single-photon detectors as a basis for improvement of photon-number-resolving devices. By adding optical cavity and using an improved NbN superconducting film, we enhanced previously reported system detection efficiency at telecom range for such detectors. Our results show that implementation of optical cavity helps to develop four-section device with quantum efficiency over 50% at 1.55 µm. Performed experimental studies of detecting multi-photon optical pulses showed irregularities over defining multi-photon through single-photon quantum efficiency.
|
Romanov, N. R., Zolotov, P. I., & Smirnov, K. V. (2019). Development of disordered ultra-thin superconducting vanadium nitride films. In Proc. 8th Int. Conf. Photonics and Information Optics (pp. 425–426).
Abstract: We present the results of development and research of superconducting vanadium nitride VN films ~10 nm thick having different level of disorder. It is showed that both silicon substrate temperature T sub in process of magnetron sputtering and total gas pressure P affect superconducting transition temperature of sputtered films and R 300 /R 20 ratio defining their level of disorder. VN films suitable for development of superconducting single-photon detectors on their basis are obtained.
|
