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Гольцман, Г. Н., Птицина, Н. Г., & Ригер, Е. Р. (1984). Оже-рекомбинация свободных носителей на мелких донорах в германии. Физика и техника полупроводников, 18(9), 1684–1686.
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Gershenzon, E. M., Gol'tsman, G. N., Multanovskii, V. V., & Ptitsina, N. G. (1983). Kinetics of electron and hole binding into excitons in germanium. Sov. Phys. JETP, 57(2), 369–376.
Abstract: The kinetics of binding of free carriers'into excitons under stationary and nonstationary conditions is studied by investigating the submillimeter photoconductivity of Ge in a wide range of temperatures and of excitation levels. It is shown that the absolute values and the temperature dependence of the binding cross section (o- T-'.' ) can be satisfactorily described by the cascade recombination theory. The value of o and its temperature dependence differ significantly from the cross sections, measured in the same manner, for capture by attracting small impurities. Under nonstationary conditions, just as in the case of recombination with shallow impurities, a signifi- cant role is played by the sticking of the carriers in highly excited states.
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Goltsman, G. N., Maliavkin, A. V., Ptitsina, N. G., & Selevko, A. G. (1986). Magnetic exciton spectroscopy in uniaxially compressed Ge at submillimeter waves. In Izv. Akad. Nauk SSSR, Seriya Fizicheskaya (Vol. 50, pp. 280–281).
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Gershenzon, E. M., Gershenzon, M. E., Gol'tsman, G. N., Semyonov, A. D., & Sergeev, A. V. (1984). Heating of electrons in superconductor in the resistive state due to electromagnetic radiation. Solid State Communications, 50(3), 207–212.
Abstract: The effect of heating electrons with respect to phonons in a thin superconducting film driven into the resistive state by the current and the external magnetic field has been observed and investigated. This effect caused by the electromagnetic radiation is manifested in the increased resistance of the film and is not selective over the frequency range from 1010 to 1015 Hz. That the effect is frequency independent under the conditions of strong electron scattering caused by static defects is explained by the decisive role of electron -electron collisions in forming the distribution function. The characteristic time of resistance change, obtained experimentally, corresponds to the relaxation time of the order parameter near the superconducting transition and to the relaxation time of the nonelastic electron-phonon interaction at lower temperatures and in lower magnetic fields.
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Murphy, A., Semenov, A., Korneev, A., Korneeva, Y., Gol'tsman, G., & Bezryadin, A. (2015). Three temperature regimes in superconducting photon detectors: quantum, thermal and multiple phase-slips as generators of dark counts. Sci. Rep., 5, 10174 (1 to 10).
Abstract: We perform measurements of the switching current distributions of three w approximately 120 nm wide, 4 nm thick NbN superconducting strips which are used for single-photon detectors. These strips are much wider than the diameter of the vortex cores, so they are classified as quasi-two-dimensional (quasi-2D). We discover evidence of macroscopic quantum tunneling by observing the saturation of the standard deviation of the switching distributions at temperatures around 2 K. We analyze our results using the Kurkijarvi-Garg model and find that the escape temperature also saturates at low temperatures, confirming that at sufficiently low temperatures, macroscopic quantum tunneling is possible in quasi-2D strips and can contribute to dark counts observed in single photon detectors. At the highest temperatures the system enters a multiple phase-slip regime. In this range single phase-slips are unable to produce dark counts and the fluctuations in the switching current are reduced.
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