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Soifer, B. T., & Pipher, J. L. (1978). Instrumentation for infrared astronomy. Annual Rev. Astron. Astrophys., 16(1), 335–369.
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Teich, M. C. (1968). Infrared heterodyne detection. In Proc. IEEE (Vol. 56, pp. 37–46). IEEE.
Abstract: Heterodyne experiments have been performed in the middle infrared region of the electromagnetic spectrum using the CO2laser as a radiation source. Theoretically optimum operation has been achieved at kHz heterodyne frequencies using photoconductive Ge:Cu detectors operated at 4°K, and at kHz and MHz frequencies using Pb1-xSnxSe photovoltaic detectors at 77°K. In accordance with the theory, the minimum detectable power observed is a factor of 2/η greater than the theoretically perfect quantum counter, hvΔf. The coefficient 2/η varies from 5 to 25 for the detectors investigated in this study. A comparison is made between photoconductive and photodiode detectors for heterodyne use in the infrared, and it is concluded that both are useful. Heterodyne detection at 10.6 µm is expected to be useful for communications applications, infrared radar, and heterodyne spectroscopy. It has particular significance because of the high radiation power available from the CO2laser, and because of the 8 to 14 µm atmospheric window.
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Thiébeau, C., Courtois, D., Delahaigue, A., Corre, H., Mouanda, J. C., & Fayt, A. (1988). Dual-beam laser heterodyne spectrometer: Ethylene absorption spectrum in the 10 μm range. Appl. Phys. B, 47(4), 313–318.
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Tretyakov, I., Svyatodukh, S., Perepelitsa, A., Ryabchun, S., Kaurova, N., Shurakov, A., et al. (2020). Ag2S QDs/Si heterostructure-based ultrasensitive SWIR range detector. Nanomaterials (Basel), 10(5), 1–12.
Abstract: In the 20(th) century, microelectronics was revolutionized by silicon-its semiconducting properties finally made it possible to reduce the size of electronic components to a few nanometers. The ability to control the semiconducting properties of Si on the nanometer scale promises a breakthrough in the development of Si-based technologies. In this paper, we present the results of our experimental studies of the photovoltaic effect in Ag2S QD/Si heterostructures in the short-wave infrared range. At room temperature, the Ag2S/Si heterostructures offer a noise-equivalent power of 1.1 x 10(-10) W/ radicalHz. The spectral analysis of the photoresponse of the Ag2S/Si heterostructures has made it possible to identify two main mechanisms behind it: the absorption of IR radiation by defects in the crystalline structure of the Ag2S QDs or by quantum QD-induced surface states in Si. This study has demonstrated an effective and low-cost way to create a sensitive room temperature SWIR photodetector which would be compatible with the Si complementary metal oxide semiconductor technology.
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Verevkin, A., Slysz, W., Pearlman, A., Zhang, J., Sobolewski, R., Okunev, O., et al. (2003). Real-time GHz-rate counting of infrared photons using nanostructured NbN superconducting detectors. In CLEO/QELS (CThM8). Optical Society of America.
Abstract: We demonstrate that our ultrathin, nanometer-width NbN superconducting single-photon detectors are capable of above 1-GHz-frequency, real-time counting of near-infrared photons. The measured system jitter of the detector is below 15 ps.
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Zhang, J., Pearlman, A., Slysz, W., Verevkin, A., Sobolewski, R., Okunev, O., et al. (2003). Infrared picosecond superconducting single-photon detectors for CMOS circuit testing. In CLEO/QELS (Cmv4). Optical Society of America.
Abstract: Novel, NbN superconducting single-photon detectors have been developed for ultrafast, high quantum efficiency detection of single quanta of infrared radiation. Our devices have been successfully implemented in a commercial VLSI CMOS circuit testing system.
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Масленников, С. Н. (2007). Смесители на эффекте электронного разогрева для терагерцового и инфракрасного диапазонов. Ph.D. thesis, , .
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Финкель, М. И. (2006). Терагерцовые смесители на эффекте электронного разогрева в ультратонких плёнках NbN и NbTiN. Ph.D. thesis, , .
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