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Finkel, M., Thierschmann, H. R., Galatro, L., Katan, A. J., Thoen, D. J., de Visser, P. J., et al. (2016). Branchline and directional THz coupler based on PECVD SiNx-technology. In 41st IRMMW-THz.
Abstract: A fabrication technology to realize THz microstrip lines and passive circuit components is developed and tested making use of a plasma-enhanced chemical vapor deposition grown silicon nitride (PECVD SiNx) dielectric membrane. We use 2 μm thick SiNx and 300 nm thick gold layers on sapphire substrates. We fabricate a set of structures for thru-reflect-line (TRL) calibration, with the reflection standard implemented as a short through the via. We find losses of 9.5 dB/mm at 300 GHz for a 50 Ohm line. For a branchline coupler we measure 2.5 dB insertion loss, 1 dB amplitude imbalance and 21 dB isolation. Good control over the THz lines parameters is proven by similar performance of a set of 5 structures. The directional couplers show -14 dB transmission to the coupled port, -24 dB to the isolated port and -25 dB in reflection. The SiNx membrane, used as a dielectric, is compatible with atomic force microscopy (AFM) cantilevers allowing the application of this technology to the development of a THz near-field microscope.
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Korneeva, Y. P., Vodolazov, D. Y., Semenov, A. V., Florya, I. N., Simonov, N., Baeva, E., et al. (2018). Optical single photon detection in micron-scaled NbN bridges. arXiv:1802.02881v1 [cond-mat.supr-con]. Retrieved May 17, 2024, from https://arxiv.org/abs/1802.02881v1
Abstract: We demonstrate experimentally that single photon detection can be achieved in micron-wide NbN bridges, with widths ranging from 0.53 μm to 5.15 μm and for photon-wavelengths from 408 nm to 1550 nm. The microbridges are biased with a dc current close to the experimental critical current, which is estimated to be about 50 % of the theoretically expected depairing current. These results offer an alternative to the standard superconducting single-photon detectors (SSPDs), based on nanometer scale nanowires implemented in a long meandering structure. The results are consistent with improved theoretical modelling based on the theory of non-equilibrium superconductivity including the vortex-assisted mechanism of initial dissipation.
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Iomdina, E. N., Seliverstov, S., Sianosyan, A., Teplyakova, K., Rusova, A., & Goltsman, G. (2016). The prospects of using the radiation for the assessment of corneal and scleral hydration. In Acta Ophthalmol. (Vol. 94).
Abstract: Purpose
An adequate water balance (hydration extent) is one of the basic factors of normal eye function, including its external shells – the cornea and the sclera. THz systems creating images in reflected beams are likely to become ideal instruments of noninvasive testing of corneal and scleral hydration degree as THz radiation is highly sensitive to water content. The paper aims at studying the transmittance and reflectance spectra of the cornea and the sclera of rabbit and human eyes, as well as those of the whole rabbit eye, in the frequency range of 0.13–0.32 THz.
Methods
The experiments were carried out on 3 corneas and 3 rabbit scleras, 2 whole rabbit eyes, and 3 human healthy adult scleras using a specially developed THz system based on reliable and easy‐to‐use continuous wave sources: a backward‐wave oscillator and an avalanche transit‐time diode.
Results
The transmittance spectra of the cornea and the sclera and the dependence of the reflection coefficient of these tissues in THz range on water percentage content were determined. Comparison of the rabbit cornea hydrated from 73.2% to 76.3% concentration by mass demonstrated an approximately linear relationship between THz reflectivity and water concentration. The decrease of free water concentration by 1% leads to a drop of the reflectance coefficient by 13%. The parameters studied displayed noticeable differences between the sclera and the cornea of rabbits and between rabbit sclera and human sclera.
Conclusions
Preliminary results demonstrate that the proposed technique, based on continuous THz radiation, may be used to create a device for noninvasive testing of corneal and scleral hydration, which has good potential of wide‐scale practical application.
The work was supported by the Russian Foundation of Basic Research (grant No.15‐29‐03843)
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Arutyunov, K. Y., Ramos-Álvarez, A., Semenov, A. V., Korneeva, Y. P., An, P. P., Korneev, A. A., et al. (2016). Quasi-1-dimensional superconductivity in highly disordered NbN nanowires. arXiv:1602.07932v1 [cond-mat.supr-con]. Retrieved May 17, 2024, from https://arxiv.org/abs/1602.07932v1
Abstract: The topic of superconductivity in strongly disordered materials has attracted a significant attention. In particular vivid debates are related to the subject of intrinsic spatial inhomogeneity responsible for non-BCS relation between the superconducting gap and the pairing potential. Here we report experimental study of electron transport properties of narrow NbN nanowires with effective cross sections of the order of the debated inhomogeneity scales. We find that conventional models based on phase slip concept provide reasonable fits for the shape of the R(T) transition curve. Temperature dependence of the critical current follows the text-book Ginzburg-Landau prediction for quasi-one-dimensional superconducting channel Ic~(1-T/Tc)^3/2. Hence, one may conclude that the intrinsic electronic inhomogeneity either does not exist in our structures, or, if exist, does not affect their resistive state properties.
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Sidorova, M., Semenov, A., Korneev, A., Chulkova, G., Korneeva, Y., Mikhailov, M., et al. (2018). Electron-phonon relaxation time in ultrathin tungsten silicon film. arXiv:1607.07321v1 [physics.ins-det]. Retrieved May 17, 2024, from https://arxiv.org/abs/1607.07321v1
Abstract: Using amplitude-modulated absorption of sub-THz radiation (AMAR) method, we studied electron-phonon relaxation in thin disordered films of tungsten silicide. We found a response time ~ 800 ps at critical temperature Tc = 3.4 K, which scales as minus 3 in the temperature range from 1.8 to 3.4 K. We discuss mechanisms, which can result in a strong phonon bottle-neck effect in a few nanometers thick film and yield a substantial difference between the measured time, characterizing response at modulation frequency, and the inelastic electron-phonon relaxation time. We estimate the electron-phonon relaxation time to be in the range ~ 100-200 ps at 3.4 K.
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