Abstract: Several competing technologies continue to advance the field of terahertz science; of particular importance has been the development of a terahertz semiconductor quantum cascade laser (QCL), which is arguably the only solid-state terahertz source with average optical power levels of much greater than a milliwatt. Terahertz QCLs are required to be cryogenically cooled and improvement of their temperature performance is the single most important research goal in the field. Thus far, their maximum operating temperature has been empirically limited to ~planckω/kB, a largely inexplicable trend that has bred speculation that a room-temperature terahertz QCL may not be possible in materials used at present. Here, we argue that this behaviour is an indirect consequence of the resonant-tunnelling injection mechanism employed in all previously reported terahertz QCLs. We demonstrate a new scattering-assisted injection scheme to surpass this limit for a 1.8-THz QCL that operates up to ~1.9planckω/kB (163 K). Peak optical power in excess of 2 mW was detected from the laser at 155 K. This development should make QCL technology attractive for applications below 2 THz, and initiate new design strategies for realizing a room-temperature terahertz semiconductor laser.

Abstract: We present measurements of the energy relaxation time, τε, of electrons in a single heterojunction in a quasi-equilibrium state using microwave time-resolved spectroscopy at 4.2 K. We find the relaxation time has a power-law dependence on the carrier density of the two-dimensional electron gas, τε∝nγs with γ = 0.40 ± 0.02 for values of the carrier density, ns, from 1.6 × 1011 to 6.6 × 1011cm−2. The results are in good agreement with predictions taking into account the scattering of the carriers by both piezoelectric and deformation potential acoustic phonons. We compare these results with indirect measurements of the energy relaxation time from energy loss measurements involving Joule heating of the electron gas.

Abstract: To improve the response performance of superconducting infrared detectors, we have developed a fabrication process for nano-antennas. A nano-antenna consists of a dipole antenna, and a superconducting thin film strip placed in the antenna's center. By measuring the transition temperature of the superconducting strips, we confirmed that their superconductivity maintained a good condition after the nano-antenna fabrication process. We also evaluated nano-antenna characteristics using Fourier transform infrared spectroscopy. The evaluated antenna length and width were respectively set at around 2400 nm and 400 nm, and the antennas were placed at intervals of several micrometers around the area of 1 mm2 . In an evaluation of spectral transmission characteristics, clear absorption caused by antenna effects was observed at around 1400 cm-1. High polarization dependencies were also observed.