Abstract: At the current stage of the heterodyne receiver technology, great attention is paid to the development of detector arrays and matrices comprising many detectors on a single wafer. However, any traditional THz detector (such as SIS, HEB, or Schottky diode) requires quite a noticeable amount of Local Oscillator (LO) power which scales with the matrix size, and the total amount of the LO power needed is much greater than that available from compact and handy solid state sources. Substantial reduction of the LO power requirement may be obtained with a photon-counting detector used as a mixer. This approach, mentioned earlier in [1,2] provides a number of advantages. Thus, sensitivity of such a detector would be at the quantum limit (because of the photon-counting nature of the detector) and just a few LO photons for the mixing would be required leading to a possible breakthrough in the matrix receiver development. In addition, the receiver could be easily tuned from the heterodyne to the direct detection mode without any loss in its sensitivity with the latter limited only by the quantum efficiency of the detector used. We demonstrate such a technique with the use of the Superconducting Nanowire Single Photon Detector(SNSPD)[3] irradiated by both 1.5 μm LO with a tiny amount of power (from a few picowatts down to femtowatts) facing the detector, and the test signal with a power significantly less than that of the LO. The SNSPD was operated in the current mode and the bias current was slightly below its critical value. Irradiating the detector with either the LO or the signal source produced voltage pulses which are statistically evenly distributed and could be easily counted by a lab counter or oscilloscope. Irradiating the detector by the both lasers simultaneously produced pulses at the frequency f m which is the exact difference between the frequencies at which the two lasers operate. f m could be deduced form either counts statistics integrated over a sufficient time interval or with the help of an RF spectrum analyzer. In addition to the chip SNSPD with normal incidence coupling, we use the detectors with a travelling wave geometry design [4]. In this case a niobium nitride nanowire is placed on the top of a nanophotonic waveguide, thus increasing the efficient interaction length. Integrated device scheme allows us to measure the optical losses with high accuracy. Our approach is fully scalable and, along with a large number of devices integrated on a single chip can be adapted to the mid and far IR ranges. This work was supported in part by the Ministry of Education and Science of the Russian Federation, contract no. 14.B25.31.0007 and by RFBR grant # 16-32-00465. 1. Leaf A. Jiang and Jane X. Luu, ―Heterodyne detection with a weak local oscillator, Applied Optics Vol. 47, Issue 10, pp. 1486-1503 (2008) 2. Matsuo H. ―Requirements on Photon Counting Detectors for Terahertz Interferometry J Low Temp Phys (2012) 167:840–845 3. A. Semenov, G. Gol'tsman, A. Korneev, “Quantum detection by current carrying superconducting film”, Physica C, 352, pp. 349-356 (2001) 4. O. Kahl, S. Ferrari, V. Kovalyuk, G. N. Goltsman, A. Korneev, and W. H. P. Pernice, ―Waveguide integrated superconducting single-photon detectors with high internal quantum efficiency at telecom wavelengths., Sci. Rep., vol. 5, p. 10941, (2015).

Abstract: The superconducting energy gap is a crucial parameter of a superconductor when used in mixing applications. In the case of the SIS mixer, the mixing process is efficient for frequencies below the energy gap, whereas, in the case of the HEB mixer, the mixing process is most efficient at frequencies above the gap, where photon absorption takes place more readily. We have investigated the photon absorption phenomenon around the gap frequency of HEB mixers based on NbN films deposited on silicon membranes. Apart from studying the pumped I-V curves of HEB devices, we have also probed them with microwave radiation, as previously described [1]. At frequencies far below the gap frequency, the pumped I-V curves show abrupt switching between the superconducting and resistive states. For the NbN HEB mixers we tested, which have critical temperatures of ~9 K, this is true for frequencies below about 400 GHz. As the pump frequency is increased beyond 400 GHz, the resistive state extends towards zero bias and at some point a small region of negative differential resistance appears close to zero bias. In this region, the microwave probe reveals that the device impedance is changing randomly with time. As the pump frequency is further increased, this random impedance change develops into relaxation oscillations, which can be observed by the demodulation of the reflected microwave probe. Initially, these oscillations take the form of several frequencies grouped together under an envelope. As we approach the gap frequency, the multiple frequency relaxation oscillations coalesce into a single frequency of a few MHz. The resultant square-wave nature of the oscillation is a clear indication that the device is in a bi-stable state, switching between the superconducting and normal state. Above the gap frequency, it is possible to obtain a pumped I-V curve with no negative differential resistance above a threshold pumping level. Below this pumping level, the device demonstrates bi-stability, and regular relaxation oscillation at a few MHz is observed as a function of pump power. The threshold pumping level is clearly related to the amount of power absorbed by the device and its phonon cooling. From the above experiment, we can derive the gap frequency of the NbN film, which is 585 GHz for our 6 μm thin silicon membrane-based device. We also confirm that the HEB mixer is not an efficient photon absorber for radiation below the gap frequency. 1. A. Trifonov et al., “Probing the stability of HEB mixers with microwave injection”, IEEE Trans. Appl. Supercond., vol. 25, no. 3, June 2015.

Abstract: Results of an experimental study of the noise temperature (Tn) and noise bandwidth (NBW) of the superconductor NbN hot-electron bolometer (HEB) mixer as a function of its temperature (Tb) are presented. It was determined that the NBW of the mixer is significantly wider at temperatures close to the critical ones (Tc) than are values measured at 4.2 K. The NBW of the mixer measured at the heterodyne frequency of 2.5 THz at temperature Tb close to Tc was ~13 GHz, as compared with 6 GHz at Tb = 4.2 K. This experiment clearly demonstrates the limitation of the thermal flow from the NbN bridge at Tb â‰<aa> Tc for mixers manufactured by the in situ technique. This limitation is close in its nature to the Andreev reflection on the superconductor/ metal boundary. In this case, the noise temperature of the studied mixer increased from 1100 to 3800 K.