Kovaluyk, V., Lazarenko, P., Kozyukhin, S., An, P., Prokhodtsov, A., Goltsman, G., et al. (2019). Influence of the phase state of Ge2Sb2Te5 thin cover on the parameters of the optical waveguide structures. In Proc. Amorphous and Nanostructured Chalcogenides (pp. 47–48). Technical University of Moldova.
Abstract: The fast switching time of Ge-Sb-Te thin films between amorphous and crystalline states initiated by laser beam as well as significant change of their optical properties and the preservation of metastable states for tens of years open wide perspectives for the application of these materials to fully optical devices [1], including high-speed optical memory [2]. Here we study optical properties of the Ge2Sb2Te5 (GST225) thin films integrated with on-chip silicon nitride O-ring resonator. The rib waveguide of the resonator was formed the first stage of e-beam lithography and subsequent reactive-ion etching. We used the second stage of e-beam lithography combining with lift-off method for the formation of GST225 active region on the resonator ring surface. The amorphous GST225 thin films were prepared by magnetron sputtering, and were capped by thin silicon oxide on their tops. The length of the GST225 active region varied from 0.1 to 20 μ m. Crystallization of amorphous thin films was carried out at the temperature of 400 °C for 30 minutes. Auger electron spectroscopy and transmission electron microscopy were used for studying composition and structure of investigated GST225thin films, respectively. It was observed that crystallization of amorphous GST225 film lead to a decrease of the optical power, transmitted through the waveguide. Comparison of the optical transmittance of O-ring resonators before and after the GST225 deposition allowed to identify the change in the Q-factor and the wavelength peak shift. This can be explained by the differences of the complex refractive indexes of GST225 thin films in the amorphous and crystalline states. From the measurement data, the GST225 effective refractive index was extracted depending on the ring waveguide width of the resonator for a telecommunication wavelength of 1550 nm.
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Елманов, И. А., Елманова, А. В., Голиков, А. Д., Комракова, С. А., Каурова, Н. С., Ковалюк, В. В., et al. (2019). Способ определения параметров резистов для электронной литографии фотонных интегральных схем на платформе нитрида кремния. In Proc. IWQO (pp. 306–308).
Abstract: В работе были измерены толщины резистов ZEP 520A и ma-N 2400 для электронно-лучевой литографии, неразрушающим способом, а также подобран рецепт, обеспечивающий высокое отношение скорости травления нитрида кремния по сравнению с резистом. Работа имеет практическое значение для электронной литографии интегрально-оптических устройств и устройств нанофотоники на основе нитрида кремния.
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Елманова, А., Елманов, И., Комракова, С., Голиков, А., Джавадзадэ, Д., Воробьёв, В., et al. (2019). Способ интеграции наноалмазов с нанофотонными устройствами из нитрида кремния. In Proc. IWQO (pp. 309–311).
Abstract: В работе были разработаны оптические структуры из нитрида кремния для дальнейшего размещения на них наноалмазов с NV-центрами, опробованы различные методики нанесения раствора наноалмазов и выбрана оптимальная. Работа имеет практическое значение в области нанофотоники и создании квантово-оптических устройств с однофотонными источниками.
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Tretyakov, I., Svyatodukh, S., Chumakova, A., Perepelitsa, A., Kaurova, N., Shurakov, A., et al. (2019). Room temperature silicon detector for IR range coated with Ag2S quantum dots. In IRMMW-THz.
Abstract: A silicon has been the chief technological semiconducting material of modern microelectronics and has had a strong influence on all aspects of society. Applications of Si-based optoelectronic devices are limited to the visible and near infrared ranges. The expansion of the Si absorption to shorter wavelengths of the infrared range is of considerable interest to optoelectronic applications. By creating impurity states in Si it is possible to cause sub-band gap photon absorption. Here, we present an elegant and effective technology of extending the photoresponse of towards the IR range. Our approach is based on the use of Ag 2 S quantum dots (QDs) planted on the surface of Si. The specific sensitivity of the Ag 2 S/Si heterostructure is 10 11 cm√HzW -1 at 1.55μm. Our findings open a path towards the future study and development of Si detectors for technological applications.
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Goltsman, G. (2019). Quantum-photonic integrated circuits. In Proc. IWQO (pp. 22–23).
Abstract: We show the design, a history of development as well as the most successful and promising approaches for QPICs realization based on hybrid nanophotonic-superconducting devices, where one of the key elements of such a circuit is a waveguide integrated superconducting single-photon detector (WSSPD). The potential of integration with fluorescent molecules is discussed also.
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