| |
Author |
Title |
Year |
Publication |
Volume |
Pages |
Links |
|
|
Shurakov, A.; Mikhalev, P.; Mikhailov, D.; Mityashkin, V.; Tretyakov, I.; Kardakova, A.; Belikov, I.; Kaurova, N.; Voronov, B.; Vasil’evskii, I.; Gol’tsman, G. |
Ti/Au/n-GaAs planar Schottky diode with a moderately Si-doped matching sublayer |
2018 |
Microelectronic Engineering |
195 |
26-31 |
|
|
|
Antipov, S.; Trifonov, A.; Krause, S.; Meledin, D.; Desmaris, V.; Belitsky, V.; Gol’tsman, G. |
Gain bandwidth of NbN HEB mixers on GaN buffer layer operating at 2 THz local oscillator frequency |
2017 |
Proc. 28th Int. Symp. Space Terahertz Technol. |
|
147-148 |
|
|
|
Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I. |
Frequency bandwidth and conversion loss of a semiconductor heterodyne receiver with phonon cooling of two-dimensional electrons |
2010 |
Semicond. |
44 |
1427-1429 |
|
|
|
Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I. |
Concentration dependence of the intermediate frequency bandwidth of submillimeter heterodyne AlGaAs/GaAs nanostructures |
2010 |
Bull. Russ. Acad. Sci. Phys. |
74 |
100-102 |
|
|
|
Huebers, H.-W.; Schubert, J.; Semenov, A.; Gol’tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.; Schwaab, G. W. |
NbN phonon-cooled hot-electron bolometer as a mixer for THz heterodyne receivers |
1999 |
Proc. SPIE |
3828 |
410-416 |
|
