| |
Author |
Title |
Year |
Publication |
Volume |
Pages |
Links |
|
|
Smirnov, K. V.; Vakhtomin, Yu. B.; Divochiy, A. V.; Ozhegov, R. V.; Pentin, I. V.; Slivinskaya, E. V.; Tarkhov, M. A.; Gol’tsman, G. N. |
Single-photon detectors for the visible and infrared parts of the spectrum based on NbN nanostructures |
2009 |
Proc. Progress In Electromagnetics Research Symp. |
|
863-864 |
|
|
|
Semenov, A.; Richter, H.; Hübers, H.-W.; Petrenko, D.; Tretyakov, I.; Ryabchun, S.; Finkel, M.; Kaurova, N.; Gol’tsman, G.; Risacher, C.; Ricken, O.; Güsten, R. |
Optimization of the intermediate frequency bandwidth in the THz HEB mixers |
2014 |
Proc. 25th Int. Symp. Space Terahertz Technol. |
|
54 |
|
|
|
Shurakov, A.; Mikhalev, P.; Mikhailov, D.; Mityashkin, V.; Tretyakov, I.; Kardakova, A.; Belikov, I.; Kaurova, N.; Voronov, B.; Vasil’evskii, I.; Gol’tsman, G. |
Ti/Au/n-GaAs planar Schottky diode with a moderately Si-doped matching sublayer |
2018 |
Microelectronic Engineering |
195 |
26-31 |
|
|
|
Antipov, S.; Trifonov, A.; Krause, S.; Meledin, D.; Desmaris, V.; Belitsky, V.; Gol’tsman, G. |
Gain bandwidth of NbN HEB mixers on GaN buffer layer operating at 2 THz local oscillator frequency |
2017 |
Proc. 28th Int. Symp. Space Terahertz Technol. |
|
147-148 |
|
|
|
Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I. |
Concentration dependence of the intermediate frequency bandwidth of submillimeter heterodyne AlGaAs/GaAs nanostructures |
2010 |
Bull. Russ. Acad. Sci. Phys. |
74 |
100-102 |
|
