| |
Author |
Title |
Year |
Publication |
Volume |
Pages  |
Links |
|
|
Belosevich, V. V.; Gayduchenko, I. A.; Titova, N. A.; Zhukova, E. S.; Goltsman, G. N.; Fedorov, G. E.; Silaev, A. A. |
Response of carbon nanotube film transistor to the THz radiation |
2018 |
EPJ Web Conf. |
195 |
05012 (1 to 2) |
|
|
|
Tretyakov, I.; Kaurova, N.; Raybchun, S.; Goltsman, G. N.; Silaev, A. A. |
Technology for NbN HEB based multipixel matrix of THz range |
2018 |
EPJ Web Conf. |
195 |
05011 |
|
|
|
Gershenzon, E. M.; Gershenzon, M. E.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
Wide-band highspeed Nb and YBaCuO detectors |
1991 |
IEEE Trans. Magn. |
27 |
2836-2839 |
|
|
|
Pernice, W. H. P.; Schuck, C.; Minaeva, O.; Li, M.; Goltsman, G. N.; Sergienko, A. V.; Tang, H. X. |
High-speed and high-efficiency travelling wave single-photon detectors embedded in nanophotonic circuits |
2012 |
Nat. Commun. |
3 |
1325 (1 to 10) |
|
|
|
Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G. |
Investigation of excited donor states in GaAs |
1974 |
Sov. Phys. Semicond. |
7 |
1248-1250 |
|
