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Varyukhin, S. V.; Zakharov, A. A.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Chulkova, G. M. Low energy excitation in La2CuO4 1990 Sverkhprovodimost': Fizika, Khimiya, Tekhnika 3 832-837 details   url
Verevkin, A. I.; Ptitsina, N. G.; Chulkova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. Electron energy relaxation in a 2D channel in AlGaAs-GaAs heterostructures under quasiequilibrium conditions at low temperatures 1995 JETP Lett. 61 591-595 details   url
Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. Cross section for binding of free carriers into excitons in germanium 1981 JETP Lett. 33 574 details   url
Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. Direct measurements of energy relaxation time of electrons in AlGaAs/GaAs heterostructures under quasi-equilibrium conditions 1996 Surface Science 361-362 569-573 details   doi
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Voronov, B. M.; Gol’tsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. Multiple Andreev reflection in hybrid AlGaAs/GaAs structures with superconducting NbN contacts 1999 Semicond. 33 551-554 details   doi
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