| |
Author |
Title  |
Year |
Publication |
Volume |
Pages |
Links |
|
|
Gershenson, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.; Kagane, M. L.; Multanovskii, V. V.; Ptitsina, N. G. |
Use of submillimeter backward-wave tube spectroscopy in determination of the chemical nature and concentration of residual impurities in pure semiconductors |
1983 |
Sov. Phys. Semicond. |
17 |
908-913 |
|
|
|
Gol'tsman, G. N.; Gusinskii, E. N.; Malyavkin, A. V.; Ptitsina, N. G.; Selevko, A. G.; Edel'shtein, V. M. |
The excitonic Zeeman effect in uniaxially-strained germanium |
1987 |
Sov. Phys. JETP |
65 |
1233-1241 |
|
|
|
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
Submillimeter spectroscopy of semiconductors |
1973 |
Sov. Phys. JETP |
37 |
299-304 |
|
|
|
Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. |
Scattering of electrons by charged impurities in Ge under cyclotron resonance conditions |
1976 |
Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
10 |
1379-1383 |
|
|
|
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
Population and lifetime of excited states of shallow impurities in Ge |
1979 |
Sov. Phys. JETP |
49 |
355-362 |
|
