| |
Author |
Title  |
Year |
Publication |
Volume |
Pages |
Links |
|
|
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Voronov, B. M.; Gol’tsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. |
Multiple Andreev reflection in hybrid AlGaAs/GaAs structures with superconducting NbN contacts |
1999 |
Semicond. |
33 |
551-554 |
|
|
|
Gerecht, E.; Musante, C. F.; Yngvesson, K. S.; Waldman, J.; Gol'tsman, G. N.; Yagoubov, P. A.; Voronov, B. M.; Gershenzon, E. M. |
Optical coupling and conversion gain for NbN HEB mixer at THz frequencies |
1997 |
Proc. 4-th Int. Semicond. Device Research Symp. |
|
47-50 |
|
|
|
Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. |
Scattering of electrons by charged impurities in Ge under cyclotron resonance conditions |
1976 |
Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
10 |
1379-1383 |
|
|
|
Gershenson, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.; Kagane, M. L.; Multanovskii, V. V.; Ptitsina, N. G. |
Use of submillimeter backward-wave tube spectroscopy in determination of the chemical nature and concentration of residual impurities in pure semiconductors |
1983 |
Sov. Phys. Semicond. |
17 |
908-913 |
|
|
|
Gershenzon, E. M.; Goltsman, G. N. |
Zeeman effect in excited-states of donors in germanium |
1972 |
Sov. Phys. Semicond. |
6 |
509 |
|
