| |
Author  |
Title |
Year |
Publication |
Volume |
Pages |
Links |
|
|
Blagosklonskaya, L. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I. |
Effect of a high magnetic field on the spectrum of donors in InSb |
1977 |
Fizika i Tekhnika Poluprovodnikov |
11 |
2373-2375 |
|
|
|
Elant'ev, A. I.; Karasik, B. S. |
Effect of high-frequency current on Nb superconductive film in resistive state |
1989 |
Sov. J. Low Temp. Phys. |
15 |
379-383 |
|
|
|
Gershenson, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.; Kagane, M. L.; Multanovskii, V. V.; Ptitsina, N. G. |
Use of submillimeter backward-wave tube spectroscopy in determination of the chemical nature and concentration of residual impurities in pure semiconductors |
1983 |
Sov. Phys. Semicond. |
17 |
908-913 |
|
|
|
Gershenzon, E. M.; Gol'tsman, G. N.; Dzardanov, A. L.; Elant'ev, A. I.; Zorin, M. A.; Markin, A. G.; Semenov, A. D. |
S-N switching of niobium and YBCO films: limit time and perspective of fast key element creation |
1992 |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
5 |
2386-2402 |
|
|
|
Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I. |
Energy spectrum of the donors in GaAs and Ge and its reaction to a magnetic field |
1977 |
Sov. Phys. JETP |
45 |
555-565 |
|
