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An, Zhenghua; Chen, Jeng-Chung; Ueda, T.; Komiyama, S.; Hirakawa, K. Infrared phototransistor using capacitively coupled two-dimensional electron gas layers 2005 Applied Physics Letters 86 172106 - 172106-3 details   openurl
Cao, Q.; Yoon, S. F.; Tong, C. Z.; Ngo, C. Y.; Liu, C. Y.; Wang, R.; Zhao, H. X. Two-state competition in 1.3 μm multilayer InAs/InGaAs quantum dot lasers 2009 Applied Physics Letters 95 3 details   openurl
Gol’tsman, G. N.; Smirnov, K. V. Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures 2001 Jetp Lett. 74 474-479 details   doi
Kawano, Yukio; Ishibashi, Koji An on-chip near-field terahertz probe and detector 2008 Nature Photonics 2 618-621 details   doi
Shah, Jagdeep; Pinczuk, A.; Gossard, A. C.; Wiegmann, W. Energy-loss rates for hot electrons and holes in GaAs quantum wells 1985 Phys. Rev. Lett. 54 2045-2048 details   openurl
Shaha, Jagdeep; Pinczukb, A.; Gossardb, A. C.; Wiegmannb, W. Hot carrier energy loss rates in GaAs quantum wells: large differences between electrons and holes 1985 Phys. B+C 134 174-178 details   openurl
Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I. Concentration dependence of the intermediate frequency bandwidth of submillimeter heterodyne AlGaAs/GaAs nanostructures 2010 Bull. Russ. Acad. Sci. Phys. 74 100-102 details   doi
Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I. Frequency bandwidth and conversion loss of a semiconductor heterodyne receiver with phonon cooling of two-dimensional electrons 2010 Semicond. 44 1427-1429 details   doi
Smirnov, K. V.; Ptitsina, N. G.; Vakhtomin, Y. B.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M. Energy relaxation of two-dimensional electrons in the quantum Hall effect regime 2000 JETP Lett. 71 31-34 details   doi
Uchiki, Hisao; Kobayashi, Takayoshi; Sakaki, Hiroyuki Photoluminescence and energy‐loss rates in GaAs quantum wells under high‐density excitation 1987 J. Appl. Phys. 62 1010-1016 details   openurl
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