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Author Karpowicz, Nicholas; Lu, Xiaofei; Zhang, X.-C. openurl 
  Title Terahertz gas photonics Type Journal Article
  Year 2009 Publication J. Modern Opt. Abbreviated Journal (down)  
  Volume 56 Issue 10 Pages 1137-1150  
  Keywords  
  Abstract The underlying physics of the generation and detection of terahertz (THz) waves in gases are described. The THz wave generation process takes place in two steps: asymmetric gas ionization by two-frequency laser fields, followed by interaction of the ionized electron wave packets with the surrounding medium, producing an intense ‘echo' with tunable spectral content. In order to clarify the physical picture at the moment of ionization, the laser–atom interaction is treated through solution of the time-dependent Schrödinger equation, yielding an ab initio understanding of the release of the electron wave packets. The second step, where the electrons interact with the surrounding plasma is treated analytically. The resulting pressure dependence of the THz radiation is explored in detail. The THz wave detection process is shown to be the result of four-wave mixing, leading to analytical expressions of the signal obtained which allow for improved optimization of systems that exploit these effects.  
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  Call Number RPLAB @ gujma @ Serial 670  
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Author Polyakov, Sergey V.; Migdalla, Alan L. openurl 
  Title Quantum radiometry Type Journal Article
  Year 2009 Publication J. Modern Opt. Abbreviated Journal (down)  
  Volume 56 Issue 9 Pages 1045-1052  
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  Abstract We review radiometric techniques that take advantage of photon counting and stem from the quantum laws of nature. We present a brief history of metrological experiments and review the current state of experimental quantum radiometry.  
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  Notes Approved no  
  Call Number RPLAB @ gujma @ Serial 671  
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Author Wang, Zhen; Miki, S.; Fujiwara, M. openurl 
  Title Superconducting nanowire single-photon detectors for quantum information and communications Type Journal Article
  Year 2009 Publication IEEE J. Sel. Topics Quantum Electron. Abbreviated Journal (down)  
  Volume 15 Issue 6 Pages 1741-1747  
  Keywords SSPD  
  Abstract Superconducting nanowire single-photon detectors (SNSPDs or SSPD) are highly promising devices in the growing field of quantum information and communications technology. We have developed a practical SSPD system with our superconducting thin films and devices fabrication, optical coupling packaging, and cryogenic technology. The SSPD system consists of six-channel SSPD devices and a compact Gifford-McMahon (GM) cryocooler, and can operate continuously on 100 V ac power without the need for any cryogens. The SSPD devices were fabricated from high-quality niobium nitride (NbN) ultrathin films that were epitaxially grown on single-crystal MgO substrates. The packaged SSPD devices were temperature stabilized to 2.96 K ± 10 mK. The system detection efficiency for an SSPD device with an area of 20 × 20 ¿m2 was found to be 2.6% and 4.5% at wavelengths of 1550 and 1310 nm, respectively, at a dark count rate of 100 Hz, and a jitter of 100 ps full-width at half maximum. We also performed ultrafast BB84 quantum key distribution (QKD) field testing and entanglement-based QKD experiments using these SSPD devices.  
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  Notes Approved no  
  Call Number RPLAB @ gujma @ Serial 676  
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Author Yang, J.K.W.; Kerman, A.J.; Dauler, E.A.; Cord, B.; Anant, V.; Molnar, R.J.; Berggren, K.K. openurl 
  Title Suppressed critical current in superconducting nanowire single-photon detectors with high fill-factors Type Journal Article
  Year 2009 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal (down)  
  Volume 19 Issue 3 Pages 318-322  
  Keywords SNSPD  
  Abstract In this work we present a new fabrication process that enabled the fabrication of superconducting nanowire single photon detectors SNSPD with fill-factors as high as 88% with gaps between nanowires as small as 12 nm. This fabrication process combined high-resolution electron-beam lithography with photolithography. Although this work was motivated by the potential of increased detection efficiency with higher fill-factor devices, test results showed an unexpected systematic suppression in device critical currents with increasing fill-factor.  
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  Call Number RPLAB @ gujma @ Serial 677  
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Author Venkatasubramanian, Chandrasekaran; Cabarcos, Orlando M.; Allara, David L. Horn, Mark W.; Ashok, S. openurl 
  Title Correlation of temperature response and structure of annealed VOx thin films for IR detector applications Type Journal Article
  Year 2009 Publication J. Vac. Sci. Technol. A Abbreviated Journal (down)  
  Volume 27 Issue 4 Pages 6  
  Keywords Annealing  
  Abstract The effects of thermal annealing on vanadium oxide (VOx) thin films prepared by pulsed-dc magnetron sputtering were studied to explore methods of improving the efficiency of uncooled IR imaging microbolometers, particularly with respect to maximizing the temperature coefficients of resistance (TCR) (typically ~2%) while minimizing resistivity values (typically 0.05–5 Ω cm). Since high TCR values are usually associated with high resistivities, the experiments were designed to find processing conditions that provide an optimal balance in these properties and to then determine the underlying structural correlations which would enable rational design of thin films for this specific application. VOx films of different compositions were deposited by pulsed-dc reactive sputtering from a vanadium target at different oxygen flow rates. The deposited films were further modified by annealing in inert (nitrogen) and oxidizing (oxygen) atmospheres at four different temperatures for 10, 20, or 30 min at a time. The resistivities of the as-deposited films ranged from 0.2 to 13 Ω cm and the TCR values varied from –1.6% to –2.2%. Depending on the exact annealing conditions, several orders of magnitude change in resistance and significant variations in TCR were observed. Optimal results were obtained with annealing in a nitrogen atmosphere. Structural characterization by x-ray diffraction, field emission scanning electron microscopy, atomic force microscopy, and Raman spectroscopy indicated changes in the film crystallinity and phase for annealing conditions over 300 °C with the onset and extent of the changes dependent on which annealing atmosphere was used.  
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  Notes Annealing Approved no  
  Call Number RPLAB @ gujma @ Serial 690  
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