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Гершензон, Е. М.; Семенов, И. Т.; Фогельсон, М. С. |
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Title |
О механизме динамического сужения линии ЭПР доноров фосфора в кремнии |
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Journal Article |
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Year |
1984 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
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18 |
Issue |
3 |
Pages |
421-425 |
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Keywords |
Si, phosphorus donors, EPR |
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Abstract |
Температурная зависимость ширины линии ЭПР доноров Р в Si исследована в интервале концентрации ND=2.5⋅1017−9⋅1017см−3 и температур T=1.7−45 K на образцах с различной степенью компенсации основной примеси. Результаты согласуются с моделью обменного сужения линии при учете температурной зависимости обменного интеграла и тем самым исключают предлагавшийся ранее механизм сужения линии вследствие прыжкового движения электронов по примесным центрам. |
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1761 |
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Author |
Банная, В. Ф.; Веселова, Л. И.; Гершензон, Е. М. |
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Title |
Об одном способе определения концентрации глубоких примесей в германии |
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Journal Article |
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Year |
1983 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
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Volume |
17 |
Issue |
10 |
Pages |
1896-1898 |
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Ge, deep impurities |
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1762 |
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Гершензон, Е. М.; Литвак-Горская, Л. Б.; Рабинович, Р. И. |
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Title |
Отрицательное магнитосопротивление в случае проводимости по верхней зоне Хаббарда |
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Journal Article |
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Year |
1983 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
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Volume |
17 |
Issue |
10 |
Pages |
1873-1876 |
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Keywords |
compensated n-InSb, Hubbard upper zone conductivity, negative magnetoresistance |
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1763 |
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Гершензон, Е. М.; Мельников, А. П.; Рабинович, Р. И.; Смирнова, В. Б. |
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Title |
О возможности создания инверсной функции распределения свободных носителей в полупроводниках при захвате на мелкие нейтральные примеси |
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Journal Article |
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Year |
1983 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
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Volume |
17 |
Issue |
3 |
Pages |
499-501 |
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Keywords |
shallow neutral impurities, capture, inverse distribution function, Si |
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1764 |
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Author |
Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. |
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Title |
Scattering of electrons by charged impurities in Ge under cyclotron resonance conditions |
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Journal Article |
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Year |
1976 |
Publication |
Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
Abbreviated Journal |
Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
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Volume |
10 |
Issue |
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Pages |
1379-1383 |
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Keywords |
Ge, cyclotron resonance, charged impurities, |
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1772 |
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