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Author |
Gol'tsman, G. N. |
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Title |
Hot electron bolometric mixers: new terahertz technology |
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Journal Article |
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Year |
1999 |
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Infrared Physics & Technology |
Abbreviated Journal |
Infrared Physics & Technology |
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Volume |
40 |
Issue |
3 |
Pages |
199-206 |
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Keywords |
NbN HEB mixers |
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Abstract |
This paper presents an overview of recent results for NbN phonon-cooled hot electron bolometric (HEB) mixers. The noise temperature of the receivers based on both quasioptical and waveguide versions of HEB mixers has crossed the level of 1 K GHz−1 at 430 GHz (410 K), 600–650 GHz (480 K), 750 GHz (600 K), 810 GHz (780 K) and is close to that level at 1.1 THz (1250 K) and 2.5 THz (4500 K). The gain bandwidth measured for quasioptical HEB mixer at 620 GHz reached 4 GHz and the noise temperature bandwidth was almost 8 GHz. Local oscillator power requirements are about 1 μW for mixers made by photolithography and about 100 nW for mixers made by e-beam lithography. A waveguide version of 800 GHz receiver was installed at the Submillimeter Telescope Observatory on Mt. Graham, AZ, to conduct astronomical observations of known submillimeter lines (CO, J=7→6, CI, J=2→1). It was proved that the receiver works as a practical instrument. |
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1350-4495 |
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1570 |
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Gol'tsman, G. N.; Loudkov, D. N. |
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Title |
Terahertz superconducting hot-electron bolometer mixers and their application in radio astronomy |
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Journal Article |
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Year |
2003 |
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Radiophys. Quant. Electron. |
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46 |
Issue |
8/9 |
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604-617 |
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Keywords |
NbN HEB mixers |
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We review the latest developments, research, and radioastronomy applications of hot-electron bolometer (HEB) mixers operated in the terahertz waveband. The physical principles of operation of terahertz HEB mixers are presented, their manufacturing from ultrathin NbN films, the main HEB-mixer parameters and their measurement techniques are discussed, and practical terahertz radioastronomy projects based on heterodyne receivers with HEB mixers are considered. |
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0033-8443 |
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UDC 537.312.62 |
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472 |
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Wei, Jian; Olaya, David; Karasik, Boris S.; Pereverzev, Sergey V.; Sergeev, Andrei V.; Gershenson, Michael E. |
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Title |
Ultrasensitive hot-electron nanobolometers for terahertz astrophysics |
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Journal Article |
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Year |
2008 |
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Nature Nanotechnology |
Abbreviated Journal |
Nature Nanotech |
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3 |
Issue |
8 |
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496-500 |
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Keywords |
HEB, Ti/NbN, single terahertz photons, detection |
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The submillimetre or terahertz region of the electromagnetic spectrum contains approximately half of the total luminosity of the Universe and 98% of all the photons emitted since the Big Bang. This radiation is strongly absorbed in the Earth's atmosphere, so space-based terahertz telescopes are crucial for exploring the evolution of the Universe. Thermal emission from the primary mirrors in these telescopes can be reduced below the level of the cosmic background by active cooling, which expands the range of faint objects that can be observed. However, it will also be necessary to develop bolometers – devices for measuring the energy of electromagnetic radiation—with sensitivities that are at least two orders of magnitude better than the present state of the art. To achieve this sensitivity without sacrificing operating speed, two conditions are required. First, the bolometer should be exceptionally well thermally isolated from the environment;
second, its heat capacity should be sufficiently small. Here we demonstrate that these goals can be achieved by building a superconducting hot-electron nanobolometer. Its design eliminates the energy exchange between hot electrons and the leads by blocking electron outdiffusion and photon emission. The thermal conductance between hot electrons and the thermal bath, controlled by electron–phonon interactions, becomes very small at low temperatures (10-16 WK-1 at 40 mK). These devices, with a heat capacity of 10-19 J K-1, are sufficiently sensitive to detect single terahertz photons in submillimetre astronomy and other applications based on quantum calorimetry and photon counting. |
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1748-3387 |
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576 |
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Zhang, J.; Boiadjieva, N.; Chulkova, G.; Deslandes, H.; Gol'tsman, G. N.; Korneev, A.; Kouminov, P.; Leibowitz, M.; Lo, W.; Malinsky, R.; Okunev, O.; Pearlman, A.; Slysz, W.; Smirnov, K.; Tsao, C.; Verevkin, A.; Voronov, B.; Wilsher, K.; Sobolewski, R. |
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Title |
Noninvasive CMOS circuit testing with NbN superconducting single-photon detectors |
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Journal Article |
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Year |
2003 |
Publication |
Electron. Lett. |
Abbreviated Journal |
Electron. Lett. |
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Volume |
39 |
Issue |
14 |
Pages |
1086-1088 |
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Keywords |
NbN SSPD, SNSPD, applications |
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The 3.5 nm thick-film, meander-structured NbN superconducting single-photon detectors have been implemented in the CMOS circuit-testing system based on the detection of near-infrared photon emission from switching transistors and have significantly improved the performance of the system. Photon emissions from both p- and n-MOS transistors have been observed. |
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0013-5194 |
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1512 |
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Author |
Semenov, A.; Engel, A.; Il'in, K.; Gol'tsman, G.; Siegel, M.; Hübers, H.-W. |
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Title |
Ultimate performance of a superconducting quantum detector |
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Journal Article |
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Year |
2003 |
Publication |
Eur. Phys. J. Appl. Phys. |
Abbreviated Journal |
Eur. Phys. J. Appl. Phys. |
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Volume |
21 |
Issue |
3 |
Pages |
171-178 |
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NbN SSPD, SNSPD |
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We analyze the ultimate performance of a superconducting quantum detector in order to meet requirements for applications in near-infrared astronomy and X-ray spectroscopy. The detector exploits a combined detection mechanism, in which avalanche quasiparticle multiplication and the supercurrent jointly produce a voltage response to a single absorbed photon via successive formation of a photon-induced and a current-induced normal hotspot in a narrow superconducting strip. The response time of the detector should increase with the photon energy providing energy resolution. Depending on the superconducting material and operation conditions, the cut-off wavelength for the single-photon detection regime varies from infrared waves to visible light. We simulated the performance of the background-limited infrared direct detector and X-ray photon counter utilizing the above mechanism. Low dark count rate and intrinsic low-frequency cut-off allow for realizing a background limited noise equivalent power of 10−20 W Hz−1/2 for a far-infrared direct detector exposed to 4-K background radiation. At low temperatures, the intrinsic response time of the counter is rather determined by diffusion of nonequilibrium electrons than by the rate of energy transfer to phonons. Therefore, thermal fluctuations do not hamper energy resolution of the X-ray photon counter that should be better than 10−3 for 6-keV photons. Comparison of new data obtained with a Nb based detector and previously reported results on NbN quantum detectors support our estimates of ultimate detector performance. |
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1286-0042 |
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534 |
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Anfertev, V.; Vaks, V.; Revin, L.; Pentin, I.; Tretyakov, I.; Goltsman, G.; Vinogradov, E. A.; Naumov, A. V.; Gladush, M. G.; Karimullin, K. R. |
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Title |
High resolution THz gas spectrometer based on semiconductor and superconductor devices |
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Conference Article |
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Year |
2017 |
Publication |
EPJ Web Conf. |
Abbreviated Journal |
EPJ Web Conf. |
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Volume |
132 |
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02001 (1 to 2) |
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Keywords |
NbN HEB mixers, detectors, THz spectroscopy |
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The high resolution THz gas spectrometer consists of a synthesizer based on Gunn generator with a semiconductor superlattice frequency multiplier as a radiation source, and an NbN hot electron bolometer in a direct detection mode as a THz radiation receiver was presented. The possibility of application of a quantum cascade laser as a local oscillator for a heterodyne receiver which is based on an NbN hot electron bolometer mixer is shown. The ways for further developing of the THz spectroscopy were outlined. |
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2100-014X |
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1328 |
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Lobanov, Y. V.; Vakhtomin, Y. B.; Pentin, I. V.; Khabibullin, R. A.; Shchavruk, N. V.; Smirnov, K. V.; Silaev, A. A. |
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Title |
Characterization of the THz quantum cascade laser using fast superconducting hot electron bolometer |
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Journal Article |
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2018 |
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EPJ Web Conf. |
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EPJ Web Conf. |
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Volume |
195 |
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04004 (1 to 2) |
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NbN HEB, QCL |
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2100-014X |
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3rd International Conference “Terahertz and Microwave Radiation: Generation, Detection and Applications” (TERA-2018) |
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1808 |
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Tretyakov, I.; Kaurova, N.; Raybchun, S.; Goltsman, G. N.; Silaev, A. A. |
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Technology for NbN HEB based multipixel matrix of THz range |
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Conference Article |
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2018 |
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EPJ Web Conf. |
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EPJ Web Conf. |
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195 |
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05011 |
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NbN HEB |
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The influence of homogeneity disorder degree of the thin superconducting NbN film across of Si wafer on characteristics of the Hot Electron Bolometers (HEB) has been investigated. Our experiments have been carried out near the superconducting transition and far below it. The high homogeneity disorder degree of the NbN film has been achieved by preparing the Si substrate surface. The fabricated HEBs all have almost identical R (T) characteristics with a dispersion of Tc and the normal resistance R300 of not more than 0.15K and 2 Ω, respectively. The quality of the devises allows us to demonstrate clearly the influence of non-equilibrium processes in the S’SS’ system on the device performance. Our fabrication technology also allows creating multiplex heterodyne and direct detector matrices based the HEB devices. |
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2100-014X |
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1318 |
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Semenov, A. D.; Gousev, Y. P.; Nebosis, R. S.; Renk, K. F.; Yagoubov, P.; Voronov, B. M.; Gol’tsman, G. N.; Syomash, V. D.; Gershenzon, E. M. |
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Heterodyne detection of THz radiation with a superconducting hot‐electron bolometer mixer |
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Journal Article |
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1996 |
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Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
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Volume |
69 |
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2 |
Pages |
260-262 |
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Keywords |
NbN HEB mixers |
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We report on the use of a superconducting hot‐electron bolometer mixer for heterodyne detection of terahertz radiation. Radiation with a wavelength of 119 μm was coupled to the mixer, a NbN microbridge, by a hybrid quasioptical antenna consisting of an extended hyperhemispherical lens and a planar logarithmic spiral antenna. We found, at an intermediate frequency of 1.5 GHz, a system double side band noise temperature of ≊40 000 K and conversion losses of 25 dB. We also discuss the possibilities of further improvement of the mixer performance. |
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0003-6951 |
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1610 |
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Kawamura, J.; Blundell, R.; Tong, C.-yu E.; Gol’tsman, G.; Gershenzon, E.; Voronov, B.; Cherednichenko, S. |
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Low noise NbN lattice-cooled superconducting hot-electron bolometric mixers at submillimeter wavelengths |
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1997 |
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Appl. Phys. Lett. |
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Appl. Phys. Lett. |
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70 |
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12 |
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1619-1621 |
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NbN HEB mixers |
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Lattice-cooled superconducting hot-electron bolometric mixers are used in a submillimeter-wave waveguide heterodyne receiver. The mixer elements are niobium nitride film with 3.5 nm thickness and ∼10 μm2 area. The local oscillator power for optimal performance is estimated to be 0.5 μW, and the instantaneous bandwidth is 2.2 GHz. At an intermediate frequency centered at 1.4 GHz with 200 MHz bandwidth, the double sideband receiver noise temperature is 410 K at 430 GHz. The receiver has been used to detect molecular line emission in a laboratory gas cell. |
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0003-6951 |
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1599 |
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Ekstörm, H.; Kollberg, E.; Yagoubov, P.; Gol'tsman, G.; Gershenzon, E.; Yngvesson, S. |
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Gain and noise bandwidth of NbN hot-electron bolometric mixers |
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Journal Article |
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1997 |
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Appl. Phys. Lett. |
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Appl. Phys. Lett. |
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Volume |
70 |
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24 |
Pages |
3296-3298 |
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NbN HEB mixers, conversion loss, conversion gain, U-factor technique |
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We have measured the noise performance and gain bandwidth of 35 Å thin NbN hot-electron mixers integrated with spiral antennas on silicon substrate lenses at 620 GHz. The best double-sideband receiver noise temperature is less than 1300 K with a 3 dB bandwidth of ≈5 GHz. The gain bandwidth is 3.2 GHz. The mixer output noise dominated by thermal fluctuations is 50 K, and the intrinsic conversion gain is about −12 dB. Without mismatch losses and excluding the loss from the beamsplitter, we expect to achieve a receiver noise temperature of less than 700 K. |
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279 |
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Yagoubov, P.; Kroug, M.; Merkel, H.; Kollberg, E.; Gol'tsman, G.; Svechnikov, S.; Gershenzon, E. |
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Noise temperature and local oscillator power requirement of NbN phonon-cooled hot electron bolometric mixers at terahertz frequencies |
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1998 |
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Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
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Volume |
73 |
Issue |
19 |
Pages |
2814-2816 |
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NbN HEB mixers, noise temperature, local oscillator power |
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In this letter, the noise performance of NbN-based phonon-cooled hot electron bolometric quasioptical mixers is investigated in the 0.55–1.1 THz frequency range. The best results of the double-sideband <cd><2018>DSB<cd><2019> noise temperature are: 500 K at 640 GHz, 600 K at 750 GHz, 850 K at 910 GHz, and 1250 K at 1.1 THz. The water vapor in the signal path causes significant contribution to the measured receiver noise temperature around 1.1 THz. The devices are made from 3-nm-thick NbN film on high-resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are typically 0.2Ï«2 um. The amount of local oscillator power absorbed in the bolometer is less than 100 nW. |
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911 |
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Il’in, K. S.; Milostnaya, I. I.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M.; Sobolewski, R. |
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Title |
Ultimate quantum efficiency of a superconducting hot-electron photodetector |
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Journal Article |
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1998 |
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Appl. Phys. Lett. |
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Appl. Phys. Lett. |
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Volume |
73 |
Issue |
26 |
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3938-3940 |
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NbN SSPD, SNSPD |
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The quantum efficiency and current and voltage responsivities of fast hot-electron photodetectors, fabricated from superconducting NbN thin films and biased in the resistive state, have been shown to reach values of 340, 220 A/W, and 4×104 V/W,
respectively, for infrared radiation with a wavelength of 0.79 μm. The characteristics of the photodetectors are presented within the general model, based on relaxation processes in the nonequilibrium electron heating of a superconducting thin film. The observed, very high efficiency and sensitivity of the superconductor absorbing the photon are explained by the high multiplication rate of quasiparticles during the avalanche breaking of Cooper pairs. |
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Il'in, K. S.; Lindgren, M.; Currie, M. A.; Semenov, D.; Gol'tsman, G. N.; Sobolewski, Roman; Cherednichenko, S. I.; Gershenzon, E. M. |
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Picosecond hot-electron energy relaxation in NbN superconducting photodetectors |
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2000 |
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Appl. Phys. Lett. |
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Appl. Phys. Lett. |
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76 |
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19 |
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2752-2754 |
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NbN HEB detectors, two-temperature model, IF bandwidth |
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We report time-resolved characterization of superconducting NbN hot-electron photodetectors using an electro-optic sampling method. Our samples were patterned into micron-size microbridges from 3.5-nm-thick NbN films deposited on sapphire substrates. The devices were illuminated with 100 fs optical pulses, and the photoresponse was measured in the ambient temperature range between 2.15 and 10.6 K (superconducting temperature transition TC). The experimental data agreed very well with the nonequilibrium hot-electron, two-temperature model. The quasiparticle thermalization time was ambient temperature independent and was measured to be 6.5 ps. The inelastic electron–phonon scattering time Ï„e–ph tended to decrease with the temperature increase, although its change remained within the experimental error, while the phonon escape time Ï„es decreased almost by a factor of two when the sample was put in direct contact with superfluid helium. Specifically, Ï„e–ph and Ï„es, fitted by the two-temperature model, were equal to 11.6 and 21 ps at 2.15 K, and 10(±2) and 38 ps at 10.5 K, respectively. The obtained value of Ï„e–ph shows that the maximum intermediate frequency bandwidth of NbN hot-electron phonon-cooled mixers operating at TC can reach 16(+4/–3) GHz if one eliminates the bolometric phonon-heating effect. |
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856 |
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Gol’tsman, G. N.; Okunev, O.; Chulkova, G.; Lipatov, A.; Semenov, A.; Smirnov, K.; Voronov, B.; Dzardanov, A.; Williams, C.; Sobolewski, R. |
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Picosecond superconducting single-photon optical detector |
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2001 |
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Appl. Phys. Lett. |
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Appl. Phys. Lett. |
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79 |
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6 |
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705-707 |
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NbN SSPD, SNSPD |
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We experimentally demonstrate a supercurrent-assisted, hotspot-formation mechanism for ultrafast detection and counting of visible and infrared photons. A photon-induced hotspot leads to a temporary formation of a resistive barrier across the superconducting sensor strip and results in an easily measurable voltage pulse. Subsequent hotspot healing in ∼30 ps time frame, restores the superconductivity (zero-voltage state), and the detector is ready to register another photon. Our device consists of an ultrathin, very narrow NbN strip, maintained at 4.2 K and current-biased close to the critical current. It exhibits an experimentally measured quantum efficiency of ∼20% for 0.81 μm wavelength photons and negligible dark counts. |
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